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At least 757 records · Page 42

Diffuse scattering from dynamically compressed single-crystal zirconium following the pressure-induced α → ω phase transition

The prototypical α → ω phase transition in zirconium is an ideal test bed for our understanding of polymorphism under extreme loading conditions. After half a century of study, a consensus had emerged that the transition is realized via one of two distinct displacive mechanisms, depending on the nature of the compression path. However, recent dynamic-compression experiments equipped with diffraction diagnostics performed in the past few years have revealed new transition mechanisms, demonstrating that our understanding of the underlying atomistic dynamics and transition kinetics is in fact far from complete. We present classical molecular dynamics simulations of the α → ω phase transition in single-crystal zirconium shock compressed along the [0001] axis using a machine-learning-class potential. The transition is predicted to proceed primarily via a modified version of the two-stage Usikov-Zilberstein mechanism, whereby the high-pressure ω phase heterogeneously nucleates at boundaries between grains of an intermediate β phase. We further observe the fomentation of atomistic disorder at the junctions between β grains, leading to the formation of highly defective interstitial material between the ω grains. We directly compare synthetic x-ray diffraction patterns generated from our simulations with those obtained using femtosecond diffraction in recent dynamic-compression experiments, and show that the simulations produce the same unique, anisotropic diffuse scattering signal unlike any previously seen from an elemental metal. Our simulations suggest that the diffuse signal arises from a combination of thermal diffuse scattering, nanoparticlelike scattering from residual kinetically stabilized α and β grains, and scattering from interstitial defective structures. Published by the American Physical Society 2024

36 MATERIALS SCIENCE↗

Diffusion of point defects in crystalline silicon using the kinetic activation-relaxation technique method

We study point-defect diffusion in crystalline silicon using the kinetic activation-relaxation technique (k-ART), an off-lattice kinetic Monte Carlo method with on-the-fly catalog building capabilities based on the activation-relaxation technique (ART nouveau), coupled to the standard Stillinger-Weber potential. We focus more particularly on the evolution of crystalline cells with one to four vacancies and one to four interstitials in order to provide a detailed picture of both the atomistic diffusion mechanisms and overall kinetics. We show formation energies, activation barriers for the ground state of all eight systems, and migration barriers for those systems that diffuse. Additionally, we characterize diffusion paths and special configurations such as dumbbell complex, di-interstitial (IV-pair+2I) superdiffuser, tetrahedral vacancy complex, and more. In conclusion, this study points to an unsuspected dynamical richness even for this apparently simple system that can only be uncovered by exhaustive and systematic approaches such as the kinetic activation-relaxation technique.

36 MATERIALS SCIENCE↗

Competing spin density wave, collinear, and helical magnetism in Fe 1 + x Te

The Fe 1+x Te phase diagram consists of two distinct magnetic structures with collinear order present at low interstitial iron concentrations and a helical phase at large values of x with these phases separated by a Lifshitz point. In this paper, we use unpolarized single-crystal diffraction to confirm the helical phase for large interstitial iron concentrations and polarized single-crystal diffraction to demonstrate the collinear order for the iron-deficient side of the Fe 1+x Te phase diagram. Polarized neutron inelastic scattering shows that the fluctuations associated with this collinear order are predominately transverse at low-energy transfers, consistent with a localized magnetic moment picture. We then apply neutron inelastic scattering and polarization analysis to investigate the dynamics and structure near the boundary between collinear and helical orders in the Fe 1+x Te phase diagram. We first show that the phase separating collinear and helical orders is characterized by a spin density wave with a single propagation wave vector of (~0.45, 0, 0.5). We do not observe harmonics or the presence of a charge density wave. The magnetic fluctuations associated with this wave vector are different from the collinear phase, being strongly longitudinal in nature and correlated anisotropically in the (H,K) plane. The excitations preserve the C 4 symmetry of the lattice but display different widths in momentum along the two tetragonal directions at low-energy transfers. Finally, while the low-energy excitations and minimal magnetic phase diagram can be understood in terms of localized interactions, we suggest that the presence of the density wave phase implies the importance of electronic and orbital properties.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Muon spin relaxation study of spin dynamics in the extended kagome systems YBaCo 4 O 7 + δ ( δ = 0 , 0.1 )

Here, we present muon spin relaxation (μSR) measurements of the extended kagome systems YBaCo 4 O 7+δ (δ = 0,0.1), comprising two interpenetrating kagome sublattice of Co(I) 3+ (S = 3/2) and a triangle sublattice of Co(II) 2+ (S = 2). The zero- and longitudinal-field μ SR spectra of the stoichiometric compound YBaCo 4 O 7 unveil that the triangular subsystem orders at TN = 101 K. In contrast, the muon spin relaxation rate pertaining to the kagome subsystem shows persistent spin dynamics down to T = 20 K and then a sublinear decrease λ(T ) ~ T 0.66(5) on cooling towards T = 4 K. In addition, the introduction of interstitial oxygen (δ = 0.1) is found to drastically affect the magnetism. For the fast-cooling experiment (>10 K/min), YBaCo 4 O 7.1 enters a regime characterized by persistent spin dynamics below 90 K. For the slow-cooling experiment (1 K/min), evidence is obtained for the phase separation into interstitial oxygen-poor and oxygen-rich regions with distinct correlation times. The observed temperature, cooling rate, and oxygen content dependencies of spin dynamics are discussed in terms of a broad range of spin-spin correlation times, relying on a different degree of frustration between the kagome and triangle sublattices as well as of oxygen migration.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Stability and conductivity of cation- and anion-substituted LiBH 4 -based solid-state electrolytes

The high-temperature phase of LiBH 4 (HT-LiBH 4 ) exhibits a promisingly high lithium ion conductivity but is unstable at room temperature. We use density functional theory (DFT) calculations to investigate the stabilization effect of halogen and alkali cation/anion substitutions on HT-LiBH 4 as well the underlying mechanism for the high lithium ion conductivity. We find that increasing the substituent concentration enhances the stabilization of HT-LiBH 4 (i.e., the DFT energy difference between the low- and high-temperature forms of substituted LiBH 4 is reduced). Cation/anion substitution also leads to a higher Li defect (vacancy, interstitial, and Frenkel) formation energy, thereby reducing the Li defect (vacancy, interstitial, and Frenkel) concentrations. Using DFT migration barriers input into kinetic Monte Carlo simulations and the Materials INTerface (MINT) framework, here we calculate the room-temperature lithium ion conductivities for Li(BH 4 ) 1-x I x (x = 0.25 and 0.5) and Li 1-y K y BH 4 (y = 0.25). Our calculations suggest that the lower I concentration leads to a higher lithium ion conductivity of 5.7 x10 -3 S/cm compared with that of Li(BH 4 ) 0.5 I 0.5 (4.2 ×10 -5 S/cm) because of the formation of more Li-related defects. Based on our findings, we suggest that the stabilization of HT-LiBH 4 -based lithium ion conductors can be controlled by carefully tuning the cation/anion substituent concentrations to maximize the lithium ionic conductivities of the specific system.

36 MATERIALS SCIENCE↗

Oxygen point defect accumulation in single-phase U O 2 + x

UO 2.07 was characterized using neutron total scattering in order to elucidate defect morphology in the low oxygen-to-metal regime (x < 0.125 for UO 2+x ). Data were collected at temperatures (600 and 1000 °C) coinciding with the single-phase UO 2+x region of the established phase diagram, and results were compared with data of stoichiometric UO 2 collected at near-identical temperatures. Experimental data were modeled and interpreted using a holistic approach employing a combination of analyses that characterized multiple spatial length scales. Preferential modeling of long-range atomic arrangements with Rietveld refinement suggests the existence of primarily monointerstitials in UO 2.07 , whereas preferential modeling of short-range atomic structures with small-box pair distribution function (PDF) refinement indicates the presence of defect clusters in UO 2.07 . Simultaneous modeling of multiple length scales using complementary reverse Monte Carlo (RMC) and molecular dynamics (MD) methods confirms that excess oxygen atoms in UO 2.07 exist as small defects, such as monointerstitials and di-interstitials. RMC and MD results agree with diffraction analysis but differ significantly from small-box PDF refinements, which may be related to a lack of intermediate- and long-range structural information gained from the small-box PDF refinement procedure. Employing a combination of analysis methods with varying length-scale sensitivities enabled more accurate assessment of the UO 2+x defect structure. Furthermore, our findings provide experimental support for previously predicted di-interstitial defect morphologies in UO 2+x that highly influence the accurate prediction of bulk physiochemical properties of UO 2+x , such as oxygen diffusivity.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Phase-field model for diffusion-induced grain boundary migration: An application to battery electrodes

Diffusion-induced grain boundary migration is a phenomenon in which a grain boundary moves in response to the driving forces generated by diffusing solute species. For example, diffusing solute species change the atomic volume in the host material, either by filling a vacancy with a misfitting solute atom or by expanding host lattices through interstitial diffusion. These volume changes are inhomogeneous and are stored as elastic energy in the material that drives grain boundaries. In this paper, we introduce our previously developed Cahn-Hilliard–phase-field-crystal model (CH-PFC) as a computational tool to investigate diffusion-induced grain boundary migration in crystalline materials. This multiscale phase-field model couples the composition field of a diffusing species with the crystallographic texture of a host material. We apply the CH-PFC model to battery electrodes and investigate whether interstitial solute diffusion induces grain growth in FePO 4 /LiFePO 4 electrodes. To this end, we compute grain growth in 60 FePO 4 electrodes by conducting two parallel trials: In the first trial, we cycle the electrode and calculate diffusion-induced grain growth. In the second trial, we do not cycle the electrode and calculate curvature-driven grain growth. We find a statistically significant grain growth in the cycled electrodes and negligible grain growth in the noncycled electrodes. Altogether, we show that the CH-PFC model not only predicts electrode microstructures as a function of the Li composition, but also predicts the crystallographic features of an electrode during battery operation.

36 MATERIALS SCIENCE↗

Interplay between defect transport and cation spin frustration in corundum-structured oxides

Despite the fundamental importance of mass transport, there is still a lack of knowledge regarding the mechanisms in many materials. In particular, how the magnetic spin structure interacts with migrating defects is unclear. In this work, using density functional theory to examine cation interstitial transport in antiferromagnetic corundum-structured oxides, we reveal an interplay between the migration of the interstitial and the magnetic structure of the oxide. The magnetic spin configuration impacts the migration energy of the migrating defect but, critically, the defect modifies the spin configuration. Thus, the two aspects change in concert to modify one another. This has profound implications for mass transport in magnetic materials.

36 MATERIALS SCIENCE↗

Defect chemistry of Cr-B binary and Cr-Al-B MAB phases: Effects of covalently bonded B networks

Transition metal borides, which are three-dimensional (3D) layered materials containing covalently bonded B networks, have shown a number of excellent properties, such as radiation resistance and the ability to act as a diffusion barrier in integrated circuits. However, defect behavior, which controls many of the materials’ properties, has remained unknown in these materials. In this work, we investigate the effects of the B networks on the defect chemistry in both binary borides (CrB, Cr 3 B 4 , Cr 2 B 3 ) and ternary MAB phases (Cr 2 AlB 2 , Cr 3 AlB 4 , Cr 4 AlB 6 ) using first-principles calculations. We find that increasing the number of B rings in the structure leads to lower formation energies and higher concentrations of Frenkel pairs. The results can be explained by the fact that the strongest Cr-B bond is weakened when borides have more B rings, leading to a reduction in the formation energy of Cr and B vacancies. Also, the bonds associated with Cr atoms bonded within B rings are softer in structures containing more B rings, which allows Cr interstitials to form with a lower energy cost and contributes to an increase in the concentration of Cr interstitials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Native and radiation induced point defects in AlN and Sc-doped AlN

Herein, we have performed first-principles calculations to investigate the electronic structure, configurations, formation, and binding energies of native and radiation induced point defects in pristine and Sc-doped wurtzite AlN. For the native defects, the nitrogen vacancy has the lowest formation energy in p-type material while the aluminum vacancy has the lowest formation energy in n-type material which is consistent with the previous studies. Several interstitial defect structures were modeled for Al, N, and Sc atoms. The effects of charge state on their relative stability were investigated. The binding energy of Sc with point defects was calculated and found to be dependent strongly on the defect type and charge state. The results obtained are discussed in light of the possible Sc effects on the radiation damage evolution in AlN. Thus the attraction of Sc atom to N vacancy and both Al and N interstitials reduces their mobility and increases Frenkel pair recombination distance.

36 MATERIALS SCIENCE↗

Calculated electron paramagnetic resonance g-tensor and hyperfine parameters for zinc vacancy and N related defects in ZnO

Various defects in ZnO, focused on substitutional N O and N 2 in various sites, O-site, interstitial and Zn-site are studied using first-principles calculations with the goal of understanding the electron paramagnetic resonance (EPR) center reported for N 2 in ZnO and substitutional N on the O-site. The g tensors are calculated using the gauge including projector augmented wave (GIPAW) method and compared with experiments. The g-tensor of the free $N^{+}_{2}$ and $N^{–}_{2}$ radicals and their various contributions within the GIPAW theory are analyzed first to provide a baseline reference for the accuracy of the method and for understanding the N 2 behavior in ZnO. Previous controversies on the site location of N 2 in ZnO for this EPR center and on the shallow or deep nature and donor or acceptor nature of this center are resolved. Here, we find that the N 2 on the Zn site is mostly zinc-vacancy like in its spin density and g-tensor, while for the O-site, a model with the N 2 axis lying in-the basal plane and the singly occupied π g -orbital along the c axis provides good agreement with experiment. For the interstitial location, if the N 2 is not strongly interacting with the surroundings, no levels in the gap are found and hence also no possible EPR center. The calculated g-tensors for N O and V Zn are also found to be in good agreement with experiment. The effects of different functionals affecting the localization of the spin density are shown to affect the g-tensor values.

36 MATERIALS SCIENCE↗

Prediction of defect properties in concentrated solid solutions using a Langmuir-like model

The alleged existence of sluggish diffusion in high-entropy alloys has drawn controversy. In high-entropy alloys and, in general, in all solids, transport properties are controlled by point defect concentration, which must be known before performing atomistic simulations to compute transport coefficients. In this work, we present a general Langmuir-like model for defect concentration in an arbitrarily complex solid solution and apply this model to generate expressions for concentrations of vacancies and small interstitial atoms. We then calculate the vacancy concentration as a function of temperature in the equiatomic CoNiCrFeMn and FeAl alloys with modified embedded-atom-method potentials for various chemical orderings, showing there is no clear correlation between vacancy thermodynamics and chemical ordering in the CoNiCrFeMn alloy, but clear systematic patterns for FeAl. We believe this is due to the high stability of disordered, random, and ordered intermetallic phases, respectively, in the CoNiCrFeMn and FeAl systems. Finally, this work provides future avenues to the prediction of thermal interstitials and vacancies in solid solutions, which is necessary for models of nonequilibrium behavior of solid solutions.

composition↗

Defect Complexes in CrSBr Revealed Through Electron Microscopy and Deep Learning

Atomic defects underpin the properties of van der Waals materials, and their understanding is essential for advancing quantum and energy technologies. Scanning transmission electron microscopy is a powerful tool for defect identification in atomically thin materials, and extending it to multilayer and beam-sensitive materials would accelerate their exploration. Here, we establish a comprehensive defect library in a bilayer of the magnetic quasi-1D semiconductor CrSBr by combining atomic-resolution imaging, deep learning, and calculations. We apply a custom-developed machine learning work flow to detect, classify, and average point vacancy defects. This classification enables us to uncover several distinct Cr interstitial defect complexes, combined Cr and Br vacancy defect complexes, and lines of vacancy defects that extend over many unit cells. We show that their occurrence is in agreement with our computed structures and binding energy densities, reflecting the intriguing layer interlocked crystal structure of CrSBr. Our ab initio calculations show that the interstitial defect complexes give rise to highly localized electronic states. These states are of particular interest due to the reduced electronic dimensionality and magnetic properties of CrSBr and are, furthermore, predicted to be optically active. Our results broaden the scope of defect studies in challenging materials and reveal new defect types in bilayer CrSBr that can be extrapolated to the bulk and to over 20 materials belonging to the same FeOCl structural family.

deep learning↗

Assessing Carrier Mobility, Dopability, and Defect Tolerance in the Chalcogenide Perovskite Ba Zr S 3

The chalcogenide perovskite Ba Zr S 3 has attracted much attention as a promising solar absorber for thin-film photovoltaics. Here we use first-principles calculations to evaluate its carrier transport and defect properties. We find that Ba Zr S 3 has a phonon-limited electron mobility of 37 cm 2 / V s, which is comparable to that in halide perovskites, but lower hole mobility of 11 cm 2 / V s. The defect computations indicate that Ba Zr S 3 is intrinsically n -type due to shallow sulfur vacancies, but that strong compensation by sulfur vacancies will prevent attempts to make it p -type. We also establish that Ba Zr S 3 shows some degree of defect tolerance, presenting only few low formation energy, deep intrinsic defects. Among the deep defects, sulfur interstitials are the dominant nonradiative recombination centers but exhibit a moderate capture coefficient. Our work highlights the material’s intrinsic limitations in carrier mobility and p -type doping, and suggests focusing on suppressing the formation of sulfur interstitials to achieve longer carrier lifetime. Published by the American Physical Society 2024

Yuan, Zhenkun (ORCID:0000000272005973)↗

ANS complex of St John’s wort PR-10 protein with 28 copies in the asymmetric unit: a fiendish combination of pseudosymmetry with tetartohedral twinning

Hyp-1, a pathogenesis-related class 10 (PR-10) protein from H. perforatum, was crystallized in complex with the fluorescent probe 8-anilino-1-naphthalene sulfonate (ANS). The asymmetric unit of the tetartohedrally twinned crystal contains 28 copies of the protein arranged in columns with noncrystallographic sevenfold translational symmetry and with additional pseudotetragonal rotational NCS. Hyp-1, a pathogenesis-related class 10 (PR-10) protein from St John’s wort (Hypericum perforatum), was crystallized in complex with the fluorescent probe 8-anilino-1-naphthalene sulfonate (ANS). The highly pseudosymmetric crystal has 28 unique protein molecules arranged in columns with sevenfold translational noncrystallographic symmetry (tNCS) along c and modulated X-ray diffraction with intensity crests at l = 7n and l = 7n ± 3. The translational NCS is combined with pseudotetragonal rotational NCS. The crystal was a perfect tetartohedral twin, although detection of twinning was severely hindered by the pseudosymmetry. The structure determined at 2.4 Å resolution reveals that the Hyp-1 molecules (packed as β-sheet dimers) have three novel ligand-binding sites (two internal and one in a surface pocket), which was confirmed by solution studies. In addition to 60 Hyp-1-docked ligands, there are 29 interstitial ANS molecules distributed in a pattern that violates the arrangement of the protein molecules and is likely to be the generator of the structural modulation. In particular, whenever the stacked Hyp-1 molecules are found closer together there is an ANS molecule bridging them.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

In-Operando Characterization of P-I-N Perovskite Solar Cell Under Reverse Bias

A solar module is often exposed to a variety of intensity and uniformity illumination conditions throughout a day. In the field, objects or dirt can block light from hitting the module creating a partial shading event. When a partial shading event occurs the module power point tracking system will typically push the shaded cells into reverse bias in order to avoid the current loss from the other series connected illuminated cells. When perovskite solar cells are operated in reverse bias, electrochemical reactions can occur, leading to both reversible and irreversible performance losses. Excess holes generated by reverse bias cause and push the oxidation reaction of halide ions from the lattice to neutral halogen interstitial. Small interstitial halogen atoms can diffuse across the device and potentially move from the perovskite layer and into the transport layers, shifting the fermi levels in the devices. In this investigation we utilize cross-sectional kelvin probe atomic force microscopy to map the band energetics of perovskite solar cells during reverse bias. We observe a 150 meV decrease in the work function of the C 60 . This leads to a decrease of 150 mV and 4 mA/cm 2 in V oc and in J sc respectively. Finally, we discuss methods to prevent this irreversible degradation after a perovskite device is held under reverse bias.

fullerene↗

Grain growth and pore coarsening in dense nano-crystalline UO 2+ x fuel pellets

Dense nano-sized UO 2+x pellets are synthesized by spark plasma sintering with controlled stoichiometries (UO 2.03 and UO 2.11 ) and grain sizes (~100 nm), and subsequently isothermally annealed to study their effects on grain growth kinetics and microstructure stability. The grain growth kinetics is determined and analyzed focusing on the interaction between grain boundary migration, pore growth and coalescence. Grains grow much bigger in nano-sized UO 2.11 than UO 2.03 upon thermal annealing, consistent with the fact that hyper-stoichiometric UO 2+x is beneficial for sintering due to enhanced U ion diffusion from excessive O ion interstitials. The activation energies of the grain growth for UO 2.03 and UO 2.11 are determined as ~1.0 and 1.3~2.0 eV, respectively. As compared with the micron-sized UO 2 in which volumetric diffusion dominates the grain coarsening with an activation energy of ~3.0 eV, the enhanced grain growth kinetics in nano-sized UO 2+x suggests that grain boundary diffusion controls grain growth. Lastly, the higher activation energy of more hyper-stoichiometric nano-sized UO 2.11 may be attributed to the excessive O interstitials pinning grain boundary migration.

36 MATERIALS SCIENCE↗