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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 757 records · Page 42
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Anodic Dissolution Rates Accelerate with Decreasing MoS 2 Nanoflake Thickness

Electrochemical gating of 2D transition metal dichalcogenide (TMD) electrodes is an emerging frontier in the field of semiconductor electrochemistry. In this approach, an applied bias modifies the charge carrier concentration of the 2D TMD, causing band edge shifts and drastic changes in charge transfer rates. However, leveraging this effect for (photo)electrocatalysis is practically limited by the stability of the TMD material under gating conditions. Gerischer showed anodic dissolution of bulk TMD electrodes can occur in the dark and hypothesized that the reaction proceeds via an electron tunneling mechanism from surface states to the TMD conduction band [H. Gerischer, D. Ross, and M. Lubke, Z. Physickalische Chem., 139, 1 (1984)]. Here we investigate this possibility in single MoS 2 nanoflakes using in situ optical microscopy and explore whether Gerischer’s electron tunneling mechanism can explain anodic dissolution rates of thin 2D semiconductors. Here, spatially resolved measurements show anodic dissolution initiates at perimeter edge sites and accelerates exponentially with decreasing layer thickness, consistent with Gerischer’s tunneling mechanism. Interestingly, single layer MoS 2 is impervious to anodic dissolution at applied potentials >200 mV more positive than those required to drive dissolution in bulk and multilayer-thick nanoflakes.

2D semiconductor↗
DOE OSTI2023

Broadband Photoconductive Sampling in Gallium Phosphide

Abstract Direct measurements of the electric field of light enable new observations of light–matter interactions. In the near‐infrared and visible spectral ranges, this typically relies on techniques that exploit nonlinearities in gases or solids, which limits their sensitivity. Here, a method for the detection of broadband near‐infrared fields spanning more than one octave from 110 to 220 THz based on linear absorption in a semiconductor is demonstrated. This technique, which avoids complex vacuum setups and works under ambient conditions, employs linear photoconductive sampling (LPS) in gallium phosphide. Simulations reveal that the response function of LPS is concerned with the intensity envelope of the gate field, in contrast to electro‐optic sampling, relaxing the stringent temporal requirements on the gate pulse.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Organic Microbial Electrochemical Transistor Monitoring Extracellular Electron Transfer

Abstract Extracellular electron transfer (EET) denotes the process of microbial respiration with electron transfer to extracellular acceptors and has been exploited in a range of microbial electrochemical systems (MESs). To further understand EET and to optimize the performance of MESs, a better understanding of the dynamics at the microscale is needed. However, the real‐time monitoring of EET at high spatiotemporal resolution would require sophisticated signal amplification. To amplify local EET signals, a miniaturized bioelectronic device, the so‐called organic microbial electrochemical transistor (OMECT), is developed, which includes Shewanella oneidensis MR‐1 integrated onto organic electrochemical transistors comprising poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) combined with poly(vinyl alcohol) (PVA). Bacteria are attached to the gate of the transistor by a chronoamperometric method and the successful attachment is confirmed by fluorescence microscopy. Monitoring EET with the OMECT configuration is achieved due to the inherent amplification of the transistor, revealing fast time‐responses to lactate. The limits of detection when using microfabricated gates as charge collectors are also investigated. The work is a first step toward understanding and monitoring EET in highly confined spaces via microfabricated organic electronic devices, and it can be of importance to study exoelectrogens in microenvironments, such as those of the human microbiome.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

High‐Performance Zinc Tin Oxide TFTs with Active Layers Deposited by Atomic Layer Deposition

Abstract New deposition techniques for amorphous oxide semiconductors compatible with silicon back end of line manufacturing are needed for 3D monolithic integration of thin‐film electronics. Here, three atomic layer deposition (ALD) processes are compared for the fabrication of amorphous zinc tin oxide (ZTO) channels in bottom‐gate, top‐contact n‐channel transistors. As‐deposited ZTO films, made by ALD at 150–200 °C, exhibit semiconducting, enhancement‐mode behavior with electron mobility as high as 13 cm 2 V −1 s −1 , due to a low density of oxygen‐related defects. ZTO deposited at 200 °C using a hybrid thermal‐plasma ALD process with an optimal tin composition of 21%, post‐annealed at 400 °C, shows excellent performance with a record high mobility of 22.1 cm 2 V –1 s –1 and a subthreshold slope of 0.29 V dec –1 . Increasing the deposition temperature and performing post‐deposition anneals at 300–500 °C lead to an increased density of the X‐ray amorphous ZTO film, improving its electrical properties. By optimizing the ZTO active layer thickness and using a high‐ k gate insulator (ALD Al 2 O 3 ), the transistor switching voltage is lowered, enabling electrical compatibility with silicon integrated circuits. This work opens the possibility of monolithic integration of ALD ZTO‐based thin‐film electronics with silicon integrated circuits or onto large‐area flexible substrates.

Allemang, Christopher R.↗
DOE OSTI2024

Reducing the Barrier Height in Organic Transistors

Abstract Reducing the Schottky barrier height and Fermi level de‐pinning in metal‐organic semiconductor contacts are crucial for enhancing the performance of organic transistors. The reduction of the Schottky barrier height in bottom‐contact top‐gate organic transistors is demonstrated by adding 1 nm thick atomic layer deposited Al 2 O 3 on the source and drain contacts. By using two different donor‐acceptor copolymers, both p‐ and n‐ type transistors are investigated. Temperature‐dependent current–voltage measurements from non‐treated, self‐assembled monolayer treated, and Al 2 O 3 treated Au source‐drain contact field‐effect transistors with varying channel lengths are carried out. The drain current versus drain voltage near zero gate voltage, which may be described by the thermionic emission model at temperatures above 150 K, allows the estimation of the Schottky barrier height ( φ B ). The Al 2 O 3 contact‐treated transistors show more than 40% lower φ B compared with the non‐treated contacts in the p ‐type transistor. Similarly, an isoindigo‐based transistor, with n ‐type transport, shows a reduction in φ B with Al 2 O 3 treated contacts suggesting that such ultrathin oxide layers provide a universal method for reducing the barrier height.

Ghobadi, Arash↗
DOE OSTI2025

Programmable Cryogenic Memory in a Ge/GeSi Heterostructure

Programmable memory components that operate optimally at cryogenic temperatures are essential for cryogenic computing architectures that seek to implement computing-in-memory. In this work, we demonstrate highly programmable memory in a Ge/GeSi heterostructure field-effect transistor (HFET). To operate, the HFET is gated to introduce positive carriers within the Ge quantum well, creating a high-conductance state. We show that this device can be set to a low-conductance state by sweeping a negative bias on the device drain, and reset it to its high-conductance state by sweeping a more positive bias on the device gate, thereby creating memory. We then determine that the device can be programmed within a 103 range of conductances using either the SET or the RESET operation. We propose that memory is achieved through charge trapping as carriers tunnel out of the quantum well, and that altering the density and spatial distribution of carriers modulates the device conductance. This mechanism exhibits endurance over 1000 cycles at temperatures ≤ 25 K, suggesting that the carrier traps are located at the oxide-semiconductor interface. As a first demonstration of programmable conductance in a Ge/GeSi HFET, this work highlights the potential of group-IV HFETs to perform as analog cryogenic memory components.

cryogenic memory↗
DOE OSTI2025

High Mobility and Electrostatics in GeSn Quantum Wells With SiGeSn Barriers

GeSn is an emerging material with potential applications in next‐generation integrated optoelectronics and quantum information processing. While GeSn/SiGeSn quantum wells exhibit promising optical properties, their electrical transport characteristics and governing electrostatics in gated structures remain unexplored. Heterostructure field‐effect transistors are fabricated using GeSn/SiGeSn quantum wells and electronic transport properties of 2D holes are characterized. At 2 K, heterostructure field‐effect transistors with well/barrier compositions of Ge 0.945 Sn 0.055 /Si 0.03 Ge 0.93 Sn 0.04 and Ge 0.9 Sn 0.1 /Si 0.017 Ge 0.927 Sn 0.056 , show peak mobilities of 9000 and 19 000 cm 2 /Vs, respectively, the latter setting a record for the highest mobility reported for GeSn quantum wells with a Sn concentration around 6 % or greater. Remarkably, at low carrier densities, devices with a SiGeSn barrier exhibit mobilities several times higher than previously reported for GeSn quantum wells with a Ge barrier. This higher mobility contrasts with the expectation that alloy scattering from the barrier would reduce carrier mobility. Two mechanisms based on atom probe tomography data analyses are proposed: i) unintentionally improved SiGeSn/GeSn interface and/or ii) reduced alloy scattering from short‐range order. Significant current–voltage hysteresis is observed, with the effective threshold gate voltage shifting by more than 5 V, attributed to non‐equilibrium trapped charge at various interfaces within the SiGeSn heterostructure.

GeSn↗
DOE OSTI2022

Physical Compact Model for Three-Terminal SONOS Synaptic Circuit Element

A well-posed physics-based compact model for a three-terminal silicon–oxide–nitride–oxide–silicon (SONOS) synaptic circuit element is presented for use by neuromorphic circuit/system engineers. Based on technology computer aided design (TCAD) simulations of a SONOS device, the model contains a nonvolatile memristor with the state variable QM representing the memristor charge under the gate of the three-terminal element. By incorporating the exponential dependence of the memristance on QM and the applied bias V for the gate, the compact model agrees quantitatively with the results from TCAD simulations as well as experimental measurements for the drain current. The compact model is implemented through VerilogA in the circuit simulation package Cadence Spectre and reproduces the experimental training behavior for the source–drain conductance of a SONOS device after applying writing pulses ranging from –12 V to +11 V, with an accuracy higher than 90%.

42 ENGINEERING↗
DOE OSTI2022

Life cycle assessment of the wood pallet repair and remanufacturing sector in the United States

Wood pallets are ubiquitous products that can be recovered and reused to enhance their service life and environmental performance. Repair/remanufacturing has an important role in extending the service life of the wood pallet. To quantify environmental performances of wood pallet reuse, this study developed representative life cycle inventory data for pallet repair/remanufacturing in the United States based on comprehensive industry-wide production data for 2018. A gate-to-gate life cycle assessment covering raw material supply, raw material transportation and pallet repair/remanufacturing showed that repair/remanufacturing often had the highest impacts, including primary energy consumption at 5.09 MJ and global warming impact at 0.355 kg CO 2 eq per repaired/remanufactured pallet. Electricity consumed onsite followed by nail input and the fuel used by forklifts during the manufacturing drove much of the impacts on the environment. Finally, the results of this study provide valuable information on the repair/remanufacturing impacts, allowing quantification and evaluation of the recovery stage on the overall environmental performance of wood pallets.

09 BIOMASS FUELS↗
DOE OSTI2024

Quantum optimization algorithms: Energetic implications

Since the dawn of quantum computing (QC), theoretical developments like Shor's algorithm proved the conceptual superiority of QC over traditional computing. However, such quantum supremacy claims are difficult to achieve in practice because of the technical challenges of realizing noiseless qubits. In the near future, QC applications will need to rely on noisy quantum devices that offload part of their work to classical devices. One way to achieve this is by using parameterized quantum circuits in optimization or even in machine learning tasks. The energy requirements of quantum algorithms have not yet been studied extensively. Here in this article, we explore several optimization algorithms using both theoretical insights and numerical experiments to understand their impact on energy consumption. Specifically, we highlight why and how algorithms like quantum natural gradient descent, simultaneous perturbation stochastic approximations or circuit learning methods, are at least 2x to 4x more energy efficient than their classical counterparts; why feedback-based quantum optimization is energy-inefficient; and how techniques like Rosalin can improve the energy efficiency of other algorithms by a factor of ≥2 0 x. Finally, we use the NchooseK high-level programming model to run optimization problems on both gate-based quantum computers and quantum annealers. Empirical data indicate that these optimization problems run faster, have better success rates, and consume less energy on quantum annealers than on their gate-based counterparts.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2022

State preparation and evolution in quantum computing: a perspective from Hamiltonian moments

Quantum algorithms on the noisy intermediate-scale quantum (NISQ) devices are expected to simulate quan- tum systems that are classically intractable to demonstrate quantum advantages. However, the non-negligible gate error on the NISQ devices impedes the conventional quantum algorithms to be implemented. Practical strategies usually exploit hybrid quantum-classical quantum algorithms to demonstrate potentially useful ap- plications of quantum computing in the NISQ era. Among the numerous hybrid quantum-classical algorithms, recent efforts highlight the development of quantum algorithms based upon quantum computed Hamiltonian moments, ?f|Hˆn|f? (n = 1, 2, · · · ), with respect to quantum state |f?. In this tutorial, we will give a brief review of these quantum algorithms with focuses on the typical ways of computing Hamiltonian moments using quantum hardware and improving the accuracy of the estimated state energies based on the quantum computed moments. Furthermore, we will present a tutorial to show how we can measure and compute the Hamiltonian moments of a four-site Heisenberg model, and compute the energy and magnetization of the model utilizing the imaginary time evolution in the real IBM-Q NISQ hardware environment. Along this line, we will further discuss some practical issues associated with these algorithms. We will conclude this tutorial review by overviewing some possible developments and applications in this direction in the near future.

Aulicino, Joseph C.↗
DOE OSTI2020

Characterization of Quantum States Based on Creation Complexity

Abstract The creation complexity of a quantum state is the minimum number of elementary gates required to create it from a basic initial state. The creation complexity of quantum states is closely related to the complexity of quantum circuits, which is crucial in developing efficient quantum algorithms that can outperform classical algorithms. A major question unanswered so far is what quantum states can be created with a number of elementary gates that scales polynomially with the number of qubits. In this work, it is first shown that for an entirely general quantum state it is exponentially hard (requires a number of steps that scales exponentially with the number of qubits) to determine if the creation complexity is polynomial. Then, it is shown that it is possible for a large class of quantum states with polynomial creation complexity to have common coefficient features such that, given any candidate quantum state, an efficient coefficient sampling procedure can be designed to determine if the state belongs to the class or not with arbitrarily high success probability. Consequently, partial knowledge of a quantum state's creation complexity is obtained, which can be useful for designing quantum circuits and algorithms involving such a state.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2020

Realization of the Werner-Holevo and Landau-Streater Quantum Channels for Qutrits on Quantum Computers.

We realize the Landau-Streater (LS) and Werner-Holevo (WH) quantum channels for qutrits on IBM quantum computers. These channels correspond to the interaction between a qutrit and its environment that results in the globally unitarily covariant qutrit transformation violating the multiplicativity of the maximal p-norm. Our realization of the LS and WH channels is based on embedding the qutrit states into states of two qubits and using the single-qubit and two-qubit CNOT gates to implement the specific interaction. We employ the standard quantum gates, hence the developed algorithm suits any quantum computer. We run our algorithm on a 5-qubit computer and a 20-qubit computer, as well as on a simulator. We quantify the quality of the implemented channels comparing their action on different input states with theoretical predictions. The overall efficiency is quantified by the fidelity between the theoretical and experimental Choi states implemented on the 20-qubit computer.

completely-positive trace-preserving map↗
DOE OSTI2022

Mode connectivity in the loss landscape of parameterized quantum circuits

Variational training of parameterized quantum circuits (PQCs) underpins many workflows employed on near-term noisy intermediate scale quantum (NISQ) devices. It is a hybrid quantum-classical approach that minimizes an associated cost function in order to train a parameterized ansatz. In this work we adapt the qualitative loss landscape characterization for neural networks introduced in Goodfellow et al. (2014); Li et al. (2017) and tests for connectivity used in Draxler et al. (2018) to study the loss landscape features in PQC training. We present results for PQCs trained on a simple regression task, using the bilayer circuit ansatz, which consists of alternating layers of parameterized rotation gates and entangling gates. Multiple circuits are trained with 3 different batch gradient optimizers: stochastic gradient descent, the quantum natural gradient, and Adam. We identify large features in the landscape that can lead to faster convergence in training workflows.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2021

Fluorescent toxins as ion channel activity sensors.

Voltage gated ion channels (VGICs) shape the electrical character of cells by undergoing structural changes in response to membrane depolarization. High-resolution techniques have provided a wealth of data on individual VGIC structures, but the conformational changes of endogenous channels in live cell membranes have remained unexplored. Here, we describe methods for imaging structural changes of voltage-gated K + channels in living cells, using peptidyl toxins labeled with fluorophores that report specific protein conformations. These Endogenous Voltage-sensor Activity Probes (EVAPs) enable study of both VGIC allostery and function in the context of endogenous live-cell membranes under different physiological states. In this chapter, we describe methods for the synthesis, imaging, and analysis of dynamic EVAPs, which can report K + channel activity in complex tissue preparations via 2-photon excitation microscopy, and environment-sensitive EVAPs, which report voltage-dependent conformational changes at the VGIC-toxin interface. The methods here present the utility of current EVAPs and lay the groundwork for the development of other probes that act by similar mechanisms. EVAPs can be correlated with electrophysiology, offering insight into the molecular details of endogenous channel function and allostery in live cells. This enables investigation of conformational changes of channels in their native, functional states, putting structures and models into a context of live-cell membranes. The expansive array of state-dependent ligands and optical probes should enable probes more generally for investigating the molecular motions of endogenous proteins.

Stewart, Robert↗
DOE OSTI2025

Democratizing life cycle assessment by developing a streamlined model of greenhouse gas emissions from US natural gas supply chains

Natural gas (NG) supply chains contribute substantially to the global energy supply and anthropogenic methane emissions, making them frequent subjects of life cycle assessments (LCAs). To better characterize central tendencies and variability, we systematically reviewed and harmonized published estimates of life cycle greenhouse gas (GHG) emissions from United States NG supply chains. Results informed a streamlined LCA model (SLiNG-GHG: streamlined LCAs of NG-GHGs) that quantifies carbon dioxide and methane from three gates: transmission, distribution, and shipping. Median estimates employing harmonized emission inputs, are 10, 11, and 21 g CO2e/MJ gas (100-year global warming potentials [GWPs]), and 20, 22, and 33 g CO2e/MJ gas (20-year GWPs), delivered to each gate, respectively. Alternatively, inputting available, independent methane measurements, SLiNG-GHG estimates varied from -23% to +316% relative to baseline. Bottom-up inventories used in LCAs tend to underestimate methane compared with measurements. Results underscore the need for open-source, streamlined LCA models that can easily incorporate rapidly evolving measurements for non-experts like investors and regulators.

29 ENERGY PLANNING, POLICY, AND ECONOMY↗
DOE OSTI2025

LuGo: An enhanced quantum phase estimation implementation

Quantum Phase Estimation (QPE) is a cardinal algorithm in quantum computing that plays a crucial role in various applications, including cryptography, molecular simulation, and solving systems of linear equations. However, the standard implementation of QPE faces challenges related to time complexity and circuit depth, which limit its practicality for large-scale computations. We introduce LuGo, a novel framework designed to enhance the performance of QPE by reducing circuit duplication, as well as using parallelization techniques to achieve faster generation of the QPE circuit and gate reduction. We validate the effectiveness of our framework by generating quantum linear solver circuits, which require both QPE and inverse QPE, to solve linear systems of equations. LuGo achieves significant improvements in both computational efficiency and hardware requirements without compromising on accuracy. Compared to a standard QPE implementation, LuGo reduces time consumption to generate a circuit that solves a 2 6 × 2 6 system matrix by a factor of 50.68 and over 31× reduction of quantum gates and circuit depth, with no fidelity loss on an ideal quantum simulator. Furthermore, we demonstrated the versatility and scalability of LuGo enabled HHL algorithm by simulating a canonical Hele-Shaw fluid problem using a quantum simulator. With these advantages, LuGo paves the way for more efficient implementations of QPE, enabling broader applications across several quantum computing domains.

Quantum algorithm↗
DOE OSTI2021

Evaluation of Motion Compensation Methods for Noninvasive Cardiac Radioablation of Ventricular Tachycardia

Noninvasive cardiac radioablation is increasingly used for treatment of refractory ventricular tachycardia. Attempts to limit normal tissue exposure are important, including managing motion of the target. An interplay between cardiac and respiratory motion exists for cardiac radioablation, which has not been studied in depth. The objectives of this study were to estimate target motion during abdominal compression free breathing (ACFB) and respiratory gated (RG) deliveries and to investigate the quality of either implanted cardioverter defibrillator lead tip or the diaphragm as a gating surrogate.

62 RADIOLOGY AND NUCLEAR MEDICINE↗