Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “FRED”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 757 records · Page 42
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Customizable Scale-Out Key-Value Stores

Enterprise KV stores are often not well suited for HPC applications, and thus cumbersome end-to-end KV design customization is required to meet the needs of modern HPC applications. To this end, in this article we present bespoKV, an adaptive, extensible, and scale-out KV store framework. bespoKV decouples the KV store design into the control plane for distributed management and the data plane for local data store. For the control plane, bespoKVprovides pre-built modules, called controlets, supporting common distributed functionalities (e.g., replication, consistency, and topology) and their various combinations. This decoupling allows bespoKV to take a user-provided single-server KV store, called a datalet, and transparently enables a scalable and fault-tolerant distributed KV store service. The resulting distributed stores are also adaptive to consistency or topology requirement changes and can be easily extended for new types of services. Such specializations enable innovative uses of KV stores in HPC applications, especially for emerging applications that utilize KV-friendly workloads. We evaluate bespoKV in a local testbed as well as in a public cloud settings. Experiments show that bespoKV-enabled distributed KV stores scale horizontally to a large number of nodes, and performs comparably and sometimes 1.2× to 2.6× better than the state-of-the-art systems.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2014

A High Temperature Silicon Carbide mosfet Power Module With Integrated Silicon-On-Insulator-Based Gate Drive

Here we present a board-level integrated silicon carbide (SiC) MOSFET power module for high temperature and high power density application. Specifically, a silicon-on-insulator (SOI)-based gate driver capable of operating at 200°C ambient temperature is designed and fabricated. The sourcing and sinking current capability of the gate driver are tested under various ambient temperatures. Also, a 1200 V/100 A SiC MOSFET phase-leg power module is developed utilizing high temperature packaging technologies. The static characteristics, switching performance, and short-circuit behavior of the fabricated power module are fully evaluated at different temperatures. Moreover, a buck converter prototype composed of the SOI gate driver and SiC power module is built for high temperature continuous operation. The converter is operated at different switching frequencies up to 100 kHz, with its junction temperature monitored by a thermosensitive electrical parameter and compared with thermal simulation results. The experimental results from the continuous operation demonstrate the high temperature capability of the power module at a junction temperature greater than 225°C.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Characteristic investigation and control of a modular multilevel converter-based HVDC system under single-line-to-ground fault conditions

This paper presents the analysis and control of a multilevel modular converter (MMC)-based HVDC transmission system under three possible single-line-to-ground fault conditions, with special focus on the investigation of their different fault characteristics. Considering positive-, negative-, and zero-sequence components in both arm voltages and currents, the generalized instantaneous power of a phase unit is derived theoretically according to the equivalent circuit model of the MMC under unbalanced conditions. Based on this model, a novel double-line frequency dc-voltage ripple suppression control is proposed. This controller, together with the negative-and zero-sequence current control, could enhance the overall fault-tolerant capability of the HVDC system without additional cost. To further improve the fault-tolerant capability, the operation performance of the HVDC system with and without single-phase switching is discussed and compared in detail. Lastly, simulation results from a three-phase MMC-HVDC system generated with MATLAB/Simulink are provided to support the theoretical analysis and proposed control schemes.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2016

Temperature-Dependent Short-Circuit Capability of Silicon Carbide Power MOSFETs

Our paper presents a comprehensive short-circuit ruggedness evaluation and numerical investigation of up-to-date commercial silicon carbide (SiC) MOSFETs. The short-circuit capability of three types of commercial 1200-V SiC MOSFETs is tested under various conditions, with case temperatures from 25 to 200 degrees C and dc bus voltages from 400 to 750 V. It is found that the commercial SiC MOSFETs can withstand short-circuit current for only several microseconds with a dc bus voltage of 750 V and case temperature of 200 degrees C. Moreover, the experimental short-circuit behaviors are compared, and analyzed through numerical thermal dynamic simulation. Specifically, an electrothermal model is built to estimate the device internal temperature distribution, considering the temperature-dependent thermal properties of SiC material. Based on the temperature information, a leakage current model is derived to calculate the main leakage current components (i.e., thermal, diffusion, and avalanche generation currents). Finally, numerical results show that the short-circuit failure mechanisms of SiC MOSFETs can be thermal generation current induced thermal runaway or high-temperature-related gate oxide damage.

4H↗
DOE OSTI2017

Investigation of Gallium Nitride Devices in High-Frequency LLC Resonant Converters

Newly emerged gallium nitride (GaN) devices feature ultrafast switching speed and low on-state resistance that potentially provide significant improvements for power converters. Here, this article investigates the benefits of GaN devices in an LLC resonant converter and quantitatively evaluates GaN devices' capabilities to improve converter efficiency. First, the relationship of device and converter design parameters to the device loss is established based on an analytical model of LLC resonant converter operating at the resonance. Due to the low effective output capacitance of GaN devices, the GaN-based design demonstrates about 50% device loss reduction compared with the Si-based design. Second, a new perspective on the extra transformer winding loss due to the asymmetrical primary-side and secondary-side current is proposed. The device and design parameters are tied to the winding loss based on the winding loss model in the finite element analysis (FEA) simulation. Compared with the Si-based design, the winding loss is reduced by 18% in the GaN-based design. Finally, in order to verify the GaN device benefits experimentally, 400- to 12-V, 300-W, 1-MHz GaN-based and Si-based LLC resonant converter prototypes are built and tested. One percent efficiency improvement, which is 24.8% loss reduction, is achieved in the GaN-based converter.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2017

Three-Phase Power Converter-Based Real-Time Synchronous Generator Emulation

This paper develops a synchronous generator emulator by using a three-phase voltage source converter for transmission level power system testing. Different interface algorithms are compared, and the voltage type ideal transformer model is selected considering accuracy and stability. At the same time, closed-loop voltage control with current feed-forward is proposed to decrease the emulation error. The emulation is then verified through two different ways. First, the output waveforms of the emulator in experiments are compared with the simulation under the same condition. Second, a transfer function perturbation-based error model is obtained and redefined as the relative error for the amplitude and phase between the emulated and the target system over the frequency range of interest. Finally, the major cause of the error is investigated through a quantitative analysis of the error with varying parameters.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2016

Load-Dependent Soft-Switching Method of Half-Bridge Current Doubler for High-Voltage Point-of-Load Converter in Data Center Power Supplies

With the increased cloud computing and digital information storage, the energy requirement of data centers keeps increasing. A high-voltage point of load (HV POL) with an input series output parallel structure is proposed to convert 400 to 1 VDC within a single stage to increase the power conversion efficiency. The symmetrical controlled half-bridge current doubler is selected as the converter topology in the HV POL. A load-dependent soft-switching method has been proposed with an auxiliary circuit that includes inductor, diode, and MOSFETs so that the hard-switching issue of typical symmetrical controlled half-bridge converters is resolved. The operation principles of the proposed soft-switching half-bridge current doubler have been analyzed in detail. Then, the necessity of adjusting the timing with the loading in the proposed method is analyzed based on losses, and a controller is designed to realize the load-dependent operation. A lossless RCD current sensing method is used to sense the output inductor current value in the proposed load-dependent operation. In conclusion, experimental efficiency of a hardware prototype is provided to show that the proposed method can increase the converter's efficiency in both heavy- and light-load conditions.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2016

A Line Impedance Conditioner for Saturation Mitigation of Zigzag Transformer in Hybrid AC/DC Transmission System Considering Line Unbalances

Hybrid ac/dc transmission extends the power transfer capacity of existing long ac lines closer to their thermal limit, by superposing the dc current onto three-phase ac lines through a zigzag transformer. However, this transformer could suffer saturation under unbalanced line impedance conditions. This paper introduces the concept of hybrid line impedance conditioner (HLIC) as a cost-effective approach to compensate for the line unbalance and therefore avoid saturation. The topology and operation principle are presented. The two-level control strategy is described, which enables autonomous adaptive regulation without the need of system-level control. Design and implementation are also analyzed, including dc-link capacitance as one of the key line conditioner components, HLIC installation, and protection under fault conditions. The cost study on this HLIC-based hybrid system is also performed to reveal the benefits of the solution. In conclusion, simulation results and experimental results based on a down-scaled prototype are provided to verify the feasibility of the proposed approach.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2016

Development, Demonstration, and Control of a Testbed for Multiterminal HVDC System

This paper presents the development of a scaled four-terminal high-voltage direct current (HVDC) testbed, including hardware structure, communication architecture, and different control schemes. The developed testbed is capable of emulating typical operation scenarios including system start-up, power variation, line contingency, and converter station failure. Some unique scenarios are also developed and demonstrated, such as online control mode transition and station re-commission. In particular, a dc line current control is proposed, through the regulation of a converter station at one terminal. By controlling a dc line current to zero, the transmission line can be opened by using relatively low-cost HVDC disconnects with low current interrupting capability, instead of the more expensive dc circuit breaker. Utilizing the dc line current control, an automatic line current limiting scheme is developed. As a result, when a dc line is overloaded, the line current control will be automatically activated to regulate current within the allowable maximum value.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2016

Steady-State Modeling of Modular Multilevel Converter Under Unbalanced Grid Conditions

This paper presents a steady-state model of MMC for the second-order phase voltage ripple prediction under unbalanced conditions, taking the impact of negative-sequence current control into account. From the steady-state model, a circular relationship is found among current and voltage quantities, which can be used to evaluate the magnitudes and initial phase angles of different circulating current components. Moreover, in order to calculate the circulating current in a point-to-point MMC-based HVdc system under unbalanced grid conditions, the derivation of equivalent dc impedance of an MMC is discussed as well. According to the dc impedance model, an MMC inverter can be represented as a series connected R-L-C branch, with its equivalent resistance and capacitance directly related to the circulating current control parameters. Experimental results from a scaled-down three-phase MMC system under an emulated single-line-to-ground fault are provided to support the theoretical analysis and derived model. In conclusion, this new models provides an insight into the impact of different control schemes on the fault characteristics and improves the understanding of the operation of MMC under unbalanced conditions.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2016

Model-Based Dead Time Optimization for Voltage-Source Converters Utilizing Silicon Carbide Semiconductors

Dead time significantly affects the reliability, power quality, and efficiency of voltage-source converters. For silicon carbide (SiC) devices, considering the high sensitivity of turn-off time to the operating conditions (> 5× difference between light load and full load) and characteristics of inductive loads (> 2× difference between motor load and inductor), as well as large additional energy loss induced by the freewheeling diode conduction during the superfluous dead time (~15% of the switching loss), then the traditional fixed dead time setting becomes inappropriate. This paper introduces an approach to adaptively regulate the dead time considering the current operating condition and load characteristics via synthesizing online monitored turn-off switching parameters in the microcontroller with an embedded preset optimization model. Here, based on a buck converter built with 1200-V SiC MOSFETs, the experimental results show that the proposed method is able to ensure reliability and reduce power loss by 12% at full load and 18.2% at light load (8% of the full load in this case study).

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2017

Methodology for Wide Band-Gap Device Dynamic Characterization

Here, the double pulse test (DPT) is a widely accepted method to evaluate the dynamic behavior of power devices. Considering the high switching-speed capability of wide band-gap devices, the test results are very sensitive to the alignment of voltage and current (V-I) measurements. Also, because of the shoot-through current induced by Cdv/dt (i.e., cross-talk), the switching losses of the nonoperating switch device in a phase-leg must be considered in addition to the operating device. This paper summarizes the key issues of the DPT, including components and layout design, measurement considerations, grounding effects, and data processing. Additionally, a practical method is proposed for phase-leg switching loss evaluation by calculating the difference between the input energy supplied by a dc capacitor and the output energy stored in a load inductor. Based on a phase-leg power module built with 1200-V/50-A SiC MOSFETs, the test results show that this method can accurately evaluate the switching loss of both the upper and lower switches by detecting only one switching current and voltage, and it is immune to V-I timing misalignment errors.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2017

Intelligent Gate Drive for Fast Switching and Crosstalk Suppression of SiC Devices

This study presents an intelligent gate drive for silicon carbide (SiC) devices to fully utilize their potential of high switching-speed capability in a phase-leg configuration. Based on the SiC device's intrinsic properties, a gate assist circuit consisting of two auxiliary transistors with two diodes is introduced to actively control gate voltages and gate loop impedances of both devices in a phase-leg configuration during different switching transients. Compared to conventional gate drives, the proposed circuit has the capability of accelerating the switching speed of the phase-leg power devices and suppressing the crosstalk to below device limits. Based on Wolfspeed 1200-V SiC MOSFETs, the test results demonstrate the effectiveness of this intelligent gate drive under varying operating conditions. More importantly, the proposed intelligent gate assist circuitry is embedded into a gate drive integrated circuit, offering a simple, compact, and reliable solution for end-users to maximize benefits of SiC devices in actual power electronics applications.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2017

Ultrafast Reverse Recovery Time Measurement for Wide-Bandgap Diodes

A system is presented that is capable of measuring sub-nanosecond reverse recovery times of diodes in wide-bandgap materials over a wide range of forward biases (0 – 1 A) and reverse voltages (0 – 10 kV). The system utilizes the step recovery technique and comprises a cable pulser based on a silicon (Si) Photoconductive Semiconductor Switch (PCSS) triggered with an Ultra Short Pulse Laser (USPL), a pulse charging circuit, a diode biasing circuit, and resistive and capacitive voltage monitors. The PCSS based cable pulser transmits a 130 ps rise time pulse down a transmission line to a capacitively coupled diode, which acts as the terminating element of the transmission line. The temporal nature of the pulse reflected by the diode provides the reverse recovery characteristics of the diode, measured with a high bandwidth capacitive probe integrated into the cable pulser. Furthermore, this system was used to measure the reverse recovery times (including the creation and charging of the depletion region) for two Avogy gallium nitride (GaN) diodes; the initial reverse recovery time was found to be 4 ns and varied minimally over reverse biases of 50 – 100 V and forward current of 1 – 100 mA.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2017

High-Frequency Transformer Design for Modular Power Conversion From Medium-Voltage AC to 400 VDC

This paper presents a high-frequency modular medium-voltage AC (4160 VAC or 13.8 kVAC) to low-voltage DC (400 VDC) system that is scalable in order to be used for different scale microgrids. A 15 kW, 500 kHz DC/DC converter is demonstrated as the most important stage of the system overall, which can be scalable to a 225 kW 4160 VAC to 400 VDC system. Motivation of a CLLC resonant converter and its design parameters determination is carefully illustrated. The high-frequency transformer is the key element for the DC/DC converter. Then, the paper focuses on high-frequency transformer design to realize high-voltage insulation, high efficiency, and high density at the same time. Based on a split winding UU core transformer structure, transformer insulation materials and dimension parameters are determined referring to the IEEE insulation standard. The transformer magnetic loss model is reviewed based on which loss design tradeoff is carefully analyzed. Different working frequency impact on transformer design over three different core materials is also presented. Finally, a 500 kHz transformer prototype has been developed and demonstrated with the IEEE standard required insulation tests. A whole CLLC resonant converter is also present with experiments results. Here, the converter holds outstanding 98% efficiency and 2.9 kW/L power density.

42 ENGINEERING↗
DOE OSTI2020

Flux Balancing Control of Ungapped Nanocrystalline Core-Based Transformer in Dual Active Bridge Converters

Transformer flux dc bias is a critical issue, impacting the reliable operation of dual active bridge (DAB) converters especially when ungapped high permeability nanocrystalline core is used. Steady state current dc bias can easily saturate ungapped nanocrystalline transformers, and it is even more dangerous in transient conditions. A dc bias model is proposed to analyze steady state dc bias in different load conditions. The magnetizing current detection is necessary for closed-loop control of dc bias; conductors' position is shown to impact sensor noise, and it is analyzed in detail. To deal with both steady state and transient dc bias, a unified flux balancing control (UFBC) is proposed introducing a predictive bias suppression (PBS) method with closed-loop flux balancing control (CFBC). With the proposed PBS, both primary/secondary current balance and flux balance can be achieved within one switching cycle using UFBC. Power characteristics and interaction between power control and flux balancing control of DAB converters are analyzed, and the CFBC needs to work in a low bandwidth due to sensor bandwidth limitation and interaction between power control and flux balancing control. Lastly, the UFBC is verified on a 300-kW cascaded DAB converter prototype.

42 ENGINEERING↗
DOE OSTI2020

A Novel Voltage Balancing Control With dv/dt Reduction for 10-kV SiC MOSFET-Based Medium Voltage Modular Multilevel Converter

Using high voltage (HV) silicon carbide (SiC) power semiconductors in a modular multilevel converter (MMC) is promising because it results in fewer submodules and lower switching loss compared to conventional Si based solutions. The nearest level pulsewidth modulation (NL-PWM) is commonly used in the MMC for medium voltage applications. However, with the NL-PWM and existing voltage balancing control, there are many submodules that switch their modes in a control cycle, resulting in a high dv/dt during the deadtime of the power semiconductor, which could be multiple times of the dv/dt of the single device. This poses great challenges on the noise immunity and insulation design in the MMC using HV SiC devices, which have very fast switching speed. A novel voltage balancing control, which ensures only two submodules switch their modes in a control cycle, is proposed in this article, limiting the maximum dv/dt to the dv/dt of a single power semiconductor and also maintaining the voltage balance performance. Furthermore, the proposed voltage balancing control is experimentally validated in a 10-kV SiC mosfet based MMC with four submodules per arm.

42 ENGINEERING↗