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At least 757 records · Page 42
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Magnetic excitations and absence of charge order in the van der Waals ferromagnet Fe 4.75 GeTe 2

Understanding the ground state of van der Waals (vdW) magnets is crucial for designing devices leveraging these platforms. Here, we investigate the magnetic excitations and charge order in Fe 4.75 GeTe 2 , a vdW ferromagnet with ≈ 315 K Curie temperature. Using Fe L 3 -edge resonant inelastic X-ray scattering, we observe a dual nature of magnetic excitations, comprising a coherent magnon and a broad non-dispersive continuum extending up to 150 meV, 50% higher than in Fe 2.72 GeTe 2 . The continuum intensity is sinusoidally modulated along the stacking direction L, with a period matching the inter-slab distance. Our results indicate that while the dual character of the magnetic excitations is generic to Fe-Ge-Te vdW magnets, Fe 4.75 GeTe 2 exhibits a longer out-of-plane magnetic correlation length, suggesting enhanced 3D magnetic character. Furthermore, resonant X-ray diffraction reveals that previously reported ±(1/3, 1/3, L) peaks originate from crystal structure rather than from charge order.

Ferromagnetism↗
DOE OSTI2020

Bloch ferromagnetism of composite fermions

In 1929, Felix Bloch suggested that the paramagnetic Fermi sea of electrons should make a spontaneous transition to a fully magnetized state at very low densities, because the exchange energy gained by aligning the spins exceeds the enhancement in the kinetic energy. However, experimental realizations of this effect have been hard to implement. In this work, we report the observation of an abrupt, interaction-driven transition to full magnetization, highly reminiscent of Bloch ferromagnetism. Our platform utilizes the two-dimensional Fermi sea of composite fermions near half-filling of the lowest Landau level. We measure the Fermi wavevector—which directly provides the spin polarization—and observe a sudden transition from a partially spin-polarized to a fully spin-polarized ground state as we lower the density of the composite fermions. Our theoretical calculations that take Landau level mixing into account provide a semi-quantitative account of this phenomenon.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Tunable correlated Chern insulator and ferromagnetism in a moiré superlattice

Studies of two-dimensional electron systems in a strong magnetic field revealed the quantum Hall effect, a topological state of matter featuring a finite Chern number C and chiral edge states. Haldane later theorized that Chern insulators with integer quantum Hall effects could appear in lattice models with complex hopping parameters even at zero magnetic field. The ABC-trilayer graphene/hexagonal boron nitride (ABC-TLG/hBN) moiré superlattice provides an attractive platform with which to explore Chern insulators because it features nearly flat moiré minibands with a valley-dependent, electrically tunable Chern number. In this work, we report the experimental observation of a correlated Chern insulator in an ABC-TLG/hBN moiré superlattice. We show that reversing the direction of the applied vertical electric field switches the moiré minibands of ABC-TLG/hBN between zero and finite Chern numbers, as revealed by large changes in magneto-transport behaviour. For topological hole minibands tuned to have a finite Chern number, we focus on quarter filling, corresponding to one hole per moiré unit cell. The Hall resistance is well quantized at h/2e 2 (where h is Planck’s constant and e is the charge on the electron), which implies C = 2, for a magnetic field exceeding 0.4 tesla. The correlated Chern insulator is ferromagnetic, exhibiting substantial magnetic hysteresis and a large anomalous Hall signal at zero magnetic field. Finally, our discovery of a C = 2 Chern insulator at zero magnetic field should open up opportunities for discovering correlated topological states, possibly with topological excitations, in nearly flat and topologically nontrivial moiré minibands.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Oxygen-Vacancy-Induced Antiferromagnetism to Ferromagnetism Transformation in Eu 0.5 Ba 0.5 TiO 3–δ Multiferroic Thin Films

Oxygen vacancies (VO) effects on magnetic ordering in Eu 0.5 Ba 0.5 TiO 3–δ (EBTO 3–δ ) thin films have been investigated using a combination of experimental measurements and first-principles density-functional calculations. Two kinds of EBTO 3–δ thin films with different oxygen deficiency have been fabricated. A nuclear resonance backscattering spectrometry technique has been used to quantitatively measure contents of the V O . Eu 0.5 Ba 0.5 TiO 3 ceramics have been known to exhibit ferroelectric (FE) and G-type antiferromagnetic (AFM) properties. While, a ferromagnetic (FM) behavior with a Curie temperature of 1.85 K has been found in the EBTO 3–δ thin films. Spin-polarized Ti 3+ ions, which originated from the V O , has been proven to mediate a FM coupling between the local Eu 4ƒ spins and were believed to be responsible for the great change of the magnetic ordering. Considering the easy formation of V O , our work opens up a new avenue for achieving co-existence of FM and FE orders in oxide materials.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Domain engineering of the metastable domains in the 4f-uniaxial-ferromagnet CeRu 2 Ga 2 B

In search of novel, improved materials for magnetic data storage and spintronic devices, compounds that allow a tailoring of magnetic domain shapes and sizes are essential. Good candidates are materials with intrinsic anisotropies or competing interactions, as they are prone to host various domain phases that can be easily and precisely selected by external tuning parameters such as temperature and magnetic field. Here, we utilize vector magnetic fields to visualize directly the magnetic anisotropy in the uniaxial ferromagnet CeRu 2 Ga 2 B. We demonstrate a feasible control both globally and locally of domain shapes and sizes by the external field as well as a smooth transition from single stripe to bubble domains, which opens the door to future applications based on magnetic domain tailoring.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Spark-plasma-sintering magnetic field assisted compaction of Co{sub 80}Ni{sub 20} nanowires for anisotropic ferromagnetic bulk materials

We developed a two-step process showing the way for sintering anisotropic nanostructured bulk ferromagnetic materials. A new reactor has been optimized allowing the synthesis of several grams per batch of nanopowders via a polyol soft chemistry route. The feasibility of the scale-up has been successfully demonstrated for Co{sub 80}Ni{sub 20} nanowires and a massic yield of ∼97% was obtained. The thus obtained nanowires show an average diameter of ∼6 nm and a length of ∼270 nm. A new bottom-up strategy allowed us to compact the powder into a bulk nanostructured system. We used a spark-plasma-sintering technique under uniaxial compression and low temperature assisted by a permanent magnetic field of 1 T. A macroscopic pellet of partially aligned nanowire arrays has been easily obtained. This showed optimized coercive properties along the direction of the magnetic field applied during compaction (i.e., the nanowires' direction)

36 MATERIALS SCIENCE↗
DOE OSTI2014

Spin transport in normal metal/insulator/topological insulator coupled to ferromagnetic insulator structures

In this study, we investigate the spin transport in normal metal (NM)/insulator (I)/topological insulator (TI) coupled to ferromagnetic insulator (FI) structures. In particular, we focus on the barrier thickness dependence of the spin transport inside the bulk gap of the TI with FI. The TI with FI is described by two-dimensional (2D) Dirac Hamiltonian. The energy profile of the insulator is assumed to be a square with barrier height V and thickness d along the transport-direction. This structure behaves as a tunnel device for 2D Dirac electrons. The calculation is performed for the spin conductance with changing the barrier thickness and the components of magnetization of FI layer. It is found that the spin conductance decreases with increasing the barrier thickness. Also, the spin conductance is strongly dependent on the polar angle θ, which is defined as the angle between the axis normal to the FI and the magnetization of FI layer. These results indicate that the structures are promising candidates for novel tunneling magnetoresistance devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Effect of Sb incorporation on structure and magnetic properties of quaternary ferromagnetic semiconductor (Ga, Mn)(As, Sb) thin films

GaAs-based quaternary ferromagnetic semiconductor (Ga, Mn)(As, Sb) has been successfully prepared by molecular-beam epitaxy. High-resolution x-ray diffraction measurements indicate that the lattice constant has a notable alteration with changing Sb content. Magnetic measurements demonstrate the same evolution of the Curie temperature T{sub C} and the effective Mn content x{sub eff} with increasing Sb content. The incorporation of low Sb content is of benefit to increasing x{sub eff}, thus, increasing T{sub C}. However, higher Sb content degrades the crystal quality, resulting in a decrease of x{sub eff}. Experimental results show that T{sub C} is proportional to the product of x{sub eff} and p{sup 1/3}, which is consistent with the Zener Model. The exchange energy N{sub 0}β is calculated to be −1.09 eV, which is similar to that of (Ga, Mn)As.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Magnetic and microwave properties of U-type hexaferrite films with high remanence and low ferromagnetic resonance linewidth

U-type barium hexaferrite films (Ba{sub 4}Ni{sub 1.4}Co{sub 0.6}Fe{sub 36}O{sub 60}) were deposited on (0001) sapphire substrates by pulsed laser deposition. Microstructure and magnetic properties of the films were characterized by X-ray diffraction, scanning electron microscopy and vibrating sample magnetometry. Ferromagnetic resonance (FMR) measurements were performed at X-band. The results indicate an anisotropy field of ∼8 kOe, and the saturation magnetization (4πM{sub s}) of ∼3.6 kG. An optimal post-deposition annealing of films results in a strong (0 0 n) crystallographic texture and a high hysteresis loop squareness (M{sub r}/M{sub s} = 92%) leading to self biased properties. Furthermore, the highly self-biased ferrite films exhibited an FMR linewidth of ∼200 Oe. The U-type hexaferrite films having low microwave loss, low magnetic anisotropy field, and high squareness are a suitable alternative to Sc or In doped BaM ferrites that have been the choice material for self-biased microwave devices at X-band frequencies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Enhanced ferromagnetic properties in Ho and Ni co-doped BiFeO{sub 3} ceramics

The magnetic properties of polycrystalline Bi{sub 1-x}Ho{sub x}Fe{sub 1-y}Ni{sub y}O{sub 3} (x = 0, 0.1; y = 0, 0.03), which were prepared by the solid-state method, have been investigated. The powder X-ray diffraction reveals that all the samples are polycrystalline and show rhombohedral perovskite structure. The micro-Raman scattering studies confirm that Bi{sub 0.9}Ho{sub 0.1}Fe{sub 0.97}Ni{sub 0.03}O{sub 3} has a compressive lattice distortion induced by the simultaneous substitution of Ho and Ni ions at A and B-sites, respectively. From the magnetization dependences at room temperature, Bi{sub 0.9}Ho{sub 0.1}Fe{sub 0.97}Ni{sub 0.03}O{sub 3} has enhanced magnetization (0.2280 emu/g) and low coercive field (280 Oe). It was revealed that the Ni dopant plays an important role for the improved ferromagnetic properties and the Ho dopant favors the magnetic exchange interactions in the co-doped ceramic.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Critical behavior of the ferromagnetic-paramagnetic phase transition in Fe{sub 90−x}Ni{sub x}Zr{sub 10} alloy ribbons

This work presents a detailed study on the critical behavior of the ferromagnetic-paramagnetic (FM-PM) phase transition in Fe{sub 90−x}Ni{sub x}Zr{sub 10} (x = 0 and 5) alloy ribbons. Basing on field dependences of magnetization (M-H), M{sup 2} versus H/M plots prove the alloys exhibiting a second-order magnetic phase transition. To investigate the nature of the FM-PM phase transition at T{sub C} = 245 and 306 K for x = 0 and 5, respectively, we performed a critical-exponent study. The values of critical components β, γ, and δ determined by using the modified Arrott plots, Kouvel-Fisher (KF), and critical isotherm analyses agree with each other. For x = 0, the critical parameters β = 0.365 ± 0.013 and γ = 1.615 ± 0.033 are obtained by modified Arrott plots while β = 0.368 ± 0.008 and γ = 1.612 ± 0.016 are obtained by the KF method. These values are close to those expected for the 3D-Heisenberg model, revealing short-range FM interactions in Fe{sub 90}Zr{sub 10}. Meanwhile, for x = 5, the values of the critical parameters β = 0.423 ± 0.008 and γ = 1.325 ± 0.036 are obtained by modified Arrott plots, and β = 0.425 ± 0.006 and γ = 1.323 ± 0.012 are obtained by the KF method. The falling of the β value in between the values of the mean-field theory (β = 0.5) and the 3D-Heisenberg model (β = 0.365) indicates an existence of FM short-range order and magnetic inhomogeneity in Fe{sub 85}Ni{sub 5}Zr{sub 10}. With a partial replacement of Ni for Fe in Fe{sub 90−x}Ni{sub x}Zr{sub 10}, the value of the critical exponent β trends to shift towards that of the mean-field theory. Such the result proves the presence of Ni favors establishing FM long-range order. The nature of this phenomenon is carefully discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Influence of the interface on the magnetic properties of ferromagnetic ultrathin films with various adjacent copper thicknesses

The interface and magnetic properties of two series of films with Ta(5 nm)/Fe{sub 20}Ni{sub 80}Nd{sub 0.017}(3 nm)/Cu(t nm) and Ta(5 nm)/Cu(t nm)/Fe{sub 50}Co{sub 50}Gd{sub 0.07}(3 nm)/Cu(2 nm) structures have been investigated by atomic force microscopy, vibrating sample magnetometer, and ferromagnetic resonance (FMR). The roughness of all films increases with increasing copper thickness, which causes the different grain sizes in the surface of films. The coercivity of FeCo-Gd films increases with increasing thickness of inserted Cu layer while decreases with increasing thickness of Cu capping layer for FeNi-Nd films. FMR linewidth exhibits huge dependence on the thickness of inserted Cu layer for FeCo-Gd films, increasing from 2270 to 3680 Oe, which comes from the additional contribution of effect of the two-magnon scattering. And the thickness of Cu capping layer shows also an influence on FMR linewidth of FeNi-Nd films, increasing from 190 to 320 Oe, which mainly comes from intrinsic FMR linewidth and plus minor inhomogeneous broadening. All of these extrinsic linewidth broadening are related to the interface roughness.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Electrically controlled spin polarization and selection in a topological insulator sandwiched between ferromagnetic electrodes

We theoretically investigate the electrically controllable spin polarization and selective efficiency of the edge state Dirac electron in a two-dimensional topological insulator (TI) sandwiched between ferromagnetic (FM) electrodes by using the method of Keldysh nonequilibrium Green's function. A nearly full spin polarization of the topological edge state with giant inversion of ∼80% is observed, which is much higher than the value previously reported. Moreover, the selective efficiency for spin-up electrons under the modulation of the parallel configuration of FM electrodes has been demonstrated to be larger than 95% for the first time, while that for spin-down electrons in the antiparallel case is higher than 90% in a wide energy range, owing to the inter-edge spin tunneling induced backscattering and spin dephasing effect. The obtained results may provide a deeper understanding of the TI edge states and a valuable guidance to design spin switch and filter with high on-off speed and selective efficiency based on TIs.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Penetration depth and absorption mechanisms of spin currents in Ir{sub 20}Mn{sub 80} and Fe{sub 50}Mn{sub 50} polycrystalline films by ferromagnetic resonance and spin pumping

Spintronics relies on the spin dependent transport properties of ferromagnets (Fs). Although antiferromagnets (AFs) are used for their magnetic properties only, some fundamental F-spintronics phenomena like spin transfer torque, domain wall motion, and tunnel anisotropic magnetoresistance also occur with AFs, thus making AF-spintronics attractive. Here, room temperature critical depths and absorption mechanisms of spin currents in Ir{sub 20}Mn{sub 80} and Fe{sub 50}Mn{sub 50} are determined by F-resonance and spin pumping. In particular, we find room temperature critical depths originating from different absorption mechanisms: dephasing for Ir{sub 20}Mn{sub 80} and spin flipping for Fe{sub 50}Mn{sub 50}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Seed influence on the ferromagnetic resonance response of Co/Ni multilayers

The effect of Pd and Ru seed layers on the magnetic properties of [Co/Ni]{sub N} multilayers with varying number of bilayer repeats N is investigated using vector network analyzer ferromagnetic resonance. The effective anisotropy field H{sub Keff} is found to increase with N for Ru seed, but decreases for Pd until N = 15. As N is increased beyond 15, H{sub Keff} decreases for both seeds. In contrast, the damping parameter α decreases with N regardless of the seed, showing a 1/N dependence. Taking spin pumping into account, the intrinsic damping α{sub 0} for both Pd and Ru seeds reduce to α{sub 0} ≈ 0.01. These results demonstrate that there can be a strong influence of the seed/Co interface on anisotropy, especially for sufficiently low N, but not necessarily on α{sub 0}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Above room-temperature ferromagnetism of Mn delta-doped GaN nanorods

One-dimensional nitride based diluted magnetic semiconductors were grown by plasma-assisted molecular beam epitaxy. Delta-doping technique was adopted to dope GaN nanorods with Mn. The structural and magnetic properties were investigated. The GaMnN nanorods with a single crystalline structure and with Ga sites substituted by Mn atoms were verified by high-resolution x-ray diffraction and Raman scattering, respectively. Secondary phases were not observed by high-resolution x-ray diffraction and high-resolution transmission electron microscopy. In addition, the magnetic hysteresis curves show that the Mn delta-doped GaN nanorods are ferromagnetic above room temperature. The magnetization with magnetic field perpendicular to GaN c-axis saturates easier than the one with field parallel to GaN c-axis.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Thermal ionization induced metal-semiconductor transition and room temperature ferromagnetism in trivalent doped ZnO codoped with lithium

Thermal ionization induced metallic to semiconductor (MST) transition occurring at 460 K for Zn{sub 0.97}Al{sub 0.03}O, 463 K for Zn{sub 0.94}Al{sub 0.03}Li{sub 0.03}O, and 503 K for Zn{sub 0.91}Al{sub 0.03}Li{sub 0.03}Mn{sub 0.03}O has been found in the sol-gel synthesized (using hexamethylenetetramine), trivalent doped (Al, Mn) ZnO codoped with lithium. Increase in the thermally ionized carrier concentration due to Al doping is responsible for near band edge (NBE) peak shift causing Fermi level to move into conduction band making it metallic consistent with resistivity results. Free carrier (thermally activated) neutralization with ionized donor is responsible for semiconducting nature, which is supported from the free carrier screening produced energy shift in the NBE of photoluminescence peak. Furthermore, independently band gap shrinkage is also obtained from UV-Visible studies confirming localization induced MST. An anti-correlation is found between defect density (DLE) and room temperature ferromagnetism (RTFM) indicating intrinsic defects are not directly responsible for RTFM.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Defect induced ferromagnetism in undoped ZnO nanoparticles

Undoped ZnO nanoparticles (NPs) with size ∼12 nm were produced using forced hydrolysis methods using diethylene glycol (DEG) [called ZnO-I] or denatured ethanol [called ZnO-II] as the reaction solvent; both using Zn acetate dehydrate as precursor. Both samples showed weak ferromagnetic behavior at 300 K with saturation magnetization M{sub s} = 0.077 ± 0.002 memu/g and 0.088 ± 0.013 memu/g for ZnO-I and ZnO-II samples, respectively. Fourier transform infrared (FTIR) spectra showed that ZnO-I nanocrystals had DEG fragments linked to their surface. Photoluminescence (PL) data showed a broad emission near 500 nm for ZnO-II which is absent in the ZnO-I samples, presumably due to the blocking of surface traps by the capping molecules. Intentional oxygen vacancies created in the ZnO-I NPs by annealing at 450 °C in flowing Ar gas gradually increased M{sub s} up to 90 min and x-ray photoelectron spectra (XPS) suggested that oxygen vacancies may have a key role in the observed changes in M{sub s}. Finally, PL spectra of ZnO showed the appearance of a blue/violet emission, attributed to Zn interstitials, whose intensity changes with annealing time, similar to the trend seen for M{sub s}. The observed variation in the magnetization of ZnO NP with increasing Ar annealing time seems to depend on the changes in the number of Zn interstitials and oxygen vacancies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗