Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Electric field effects”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 757 records · Page 42
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Mesoscale Design of Magnetoelectric Heterostructures and Nanocomposites

Multiferroic materials have a coexistence of at least two ferroic orders. The coupling interaction between the different order parameters can produce new phenomena, such as the magnetoelectric (ME) effect. The ME response is the appearance of an electric polarization P upon applying a magnetic field H, and/or vice versa. Magnetoelectricity has been observed as an intrinsic effect in some natural materials at low temperature; however, such single phase materials suffer from extremely weak ME exchange. Better alternatives are two-phase composites consisting of magnetostrictive and piezoelectric phases, which have been shown to have large ME coefficients. Said composites exploit a unique product ME tensor property that depends upon the individual strictions of the piezoelectric and magnetostrictive phases, the elastic stiffness and integrity of the interphase interfaces, the phase distribution and the dimensionality of its connectivity, and any elastic constraint; amongst other things. This research program between D. Viehland PI and S.Priya at Virginia Tech investigated the mesoscale physics and chemistry of such two-phase ME heterostructures. The results of the proposed research are relevant to new generations of multifunctional materials involving heterogeneous components. How the product ME property be optimized? The answers lies with the interphase-interfaces, where the atomic layers coordinate stress transfer from one phase to another. It was the primary goal of this research program to discover such fundamental relationship for two phase ME heterostructures and nanocomposites. This research program integrated all the components required to fully investigate the ME phenomenon: starting from synthesis of nanomaterials with diversified interfacial characteristics; to full electrical, magnetic, and structural characterizations.

36 MATERIALS SCIENCE↗
NASA NTRS1999

Electrical Aspects of Flames in Microgravity Combustion

A principal characteristic of combustion in microgravity is the absence of buoyancy driven flows. In some cases, such as for spherically symmetrical droplet burning, the absence of buoyancy is desirable for matching analytical treatments with experiments. In other cases, however, it can be more valuable to arbitrarily control the flame's convective environment independent of the environmental gravitational condition. To accomplish this, we propose the use of ion generated winds driven by electric fields to control local convection of flames. Such control can produce reduced buoyancy (effectively zero buoyancy) conditions in the laboratory in 1-g facilitating a wide range of laser diagnostics that can probe the system without special packaging required for drop tower or flight tests. In addition, the electric field generated ionic winds allow varying gravitational convection equivalents even if the test occurs in reduced gravity environments.

Dunn-Rankin, D.↗
DOE OSTI2023

Energy-Resolved Femtosecond Hot Electron Dynamics in Single Plasmonic Nanoparticles

Efficient excitation and harvesting of hot carriers from nanoscale metals is central to many emerging photochemical, photovoltaic, and ultrafast optoelectronic applications. Nevertheless, direct experimental evidence of the energy-dependent femtosecond dynamics in ubiquitous tens-of-nanometer gold structures remains elusive, despite the potentially rich interplay between interfacial and internal plasmonic fields, excitation distributions, and scattering processes. To explore the effects of nanoscale structure on these dynamics, we employ simultaneous time-, angle-, and energy-resolved photoemission spectroscopy of single plasmonic nanoparticles. Photoelectron velocity and electric field distributions reveal bulk-like ballistic hot electron transport in different geometries, lacking any signatures of surface effects. Energy-resolved dynamics are measured in the 1–2 eV range and extrapolated to lower energies via Boltzmann theory, providing a detailed view of hot electron lifetimes within nanoscale gold. Here, we find that particles with relevant dimensions as small as 10 nm serve as exemplary platforms for studying intrinsic metal dynamics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Manufactured solutions for an electromagnetic slot model

The accurate modeling of electromagnetic penetration is an important topic in computational electromagnetics. Electromagnetic penetration occurs through intentional or inadvertent openings in an otherwise closed electromagnetic scatterer, which prevent the contents from being fully shielded from external fields. To efficiently model electromagnetic penetration, aperture or slot models can be used with surface integral equations to solve Maxwell's equations. A necessary step towards establishing the credibility of these models is to assess the correctness of the implementation of the underlying numerical methods through code verification. Surface integral equations and slot models yield multiple interacting sources of numerical error and other challenges, which render traditional code-verification approaches ineffective. In this paper, we provide approaches to separately measure the numerical errors arising from these different error sources for the method-of-moments implementation of the electric-field integral equation with a slot model. Finally, we demonstrate the effectiveness of these approaches for a variety of cases.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Simulation of decelerating streamers in inhomogeneous atmosphere with implications for runaway electron generation

The dynamics of positive and negative streamers is numerically simulated in atmospheric pressure air in the range of parameters corresponding to the streamer deceleration and termination in the middle of the discharge gap. A detailed comparison with experiments in air at constant and variable density demonstrates good agreement between the 2D simulation results and the observations. It is shown that positive and negative streamers behave in radically different ways when decelerating and stopping. When the head potential drops, the negative streamer transits to the mode in which the propagation is due to the forward electron drift. In this case, the radius of the ionization wave front increases, whereas the electric field at the streamer head decreases further and the streamer stops. Its head diameter continues to increase due to the slow drift of free electrons in the residual under-breakdown field. On the contrary, the only advancement mechanism for a positive streamer with a decreasing head potential is a decrease in the effective radius of the ionization wave, leading to a local increase in the electric field. This mechanism makes it possible to compensate for the reduction in the efficiency of gas photoionization at small head diameters. A qualitative 1D model is suggested to describe streamer deceleration and stopping for different discharge polarities. Estimates show that, during positive streamer stopping, the local electric field at the streamer head can exceed the threshold corresponding to the transition of electrons to the runaway mode when the head potential (relative to the surrounding space) decreases to~1.2 kV in atmospheric pressure air. In this case, pulsed generation of a beam of runaway electrons directed into the channel of a stopping positive streamer can occur. The energy of the formed pulsed electron beam depends on the intensity of photoionization in front of the streamer head. This energy can vary from 700 V (when increasing the photoionization rate by a factor of 10 with respect to the value in atmospheric pressure air) to 2.6 kV (when decreasing the photoionization rate by a factor of 1000). It is possible that this behavior of decelerating positive streamers can explain the observed bursts of x-ray radiation during the streamer propagation in long air gaps.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1992

Role of inductive electric fields in substorm development

A study discussing and investigating the role of inductive electric fields in substorm development is presented. It is common to use the scalar potential phi to calculate the electrostatic field E(sup ES)-(inverted Delta)(phi). However, vector potential A has not been extensively used to analyze results by the relation for the inductive electric field E(sup IND)-delta A/delta t. Because of the weak dependence in distance (1/r) these potentials show the effect of distant sources, unlike MHD (Magnetohydrodynamic) theory which is strictly local. The two can be separated by the choice of the Coulomb (transverse) gauge. It is proper to consider that the plasma polarizes to counteract the activation of the inductive electric field; this is a matter of cause and effect. However, such polarization produces a curl free electrostatic field and thus cannot alter the electromotive force due to induction. This idea has some interesting consequences for plasma physics, including violations of MHD theory, creation of the substorm current diversion, and a fresh look at dayside merging via plasma transfer events.

Heikkila, Walter J.↗
DOE OSTI2022

Electrical Manipulation of Topological Phases in a Quantum Anomalous Hall Insulator

Quantum anomalous Hall phases arising from the inverted band topology in magnetically doped topological insulators have emerged as an important subject of research for quantization at zero magnetic fields. Though necessary for practical implementation, sophisticated electrical control of molecular beam epitaxy (MBE)-grown quantum anomalous Hall matter have been stymied by growth and fabrication challenges. Here, in this study, a novel procedure is demonstrated, employing a combination of thin-film deposition and 2D material stacking techniques, to create dual-gated devices of the MBE-grown quantum anomalous Hall insulator, Cr-doped (Bi,Sb) 2 Te 3 . In these devices, orthogonal control over the field-induced charge density and the electric displacement field is demonstrated. A thorough examination of material responses to tuning along each control axis is presented, realizing magnetic property control along the former and a novel capability to manipulate the surface exchange gap along the latter. Through electrically addressing the exchange gap, the capabilities to either strengthen the quantum anomalous Hall state or suppress it entirely and drive a topological phase transition to a trivial state are demonstrated. The experimental result is explained using first principle theoretical calculations, and establishes a practical route for in situ control of quantum anomalous Hall states and topology.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Enhanced UV–Vis Rejection Ratio in Metal/BaTiO 3 /β–Ga 2 O 3 Solar–Blind Photodetectors

The fabrication and characterization of metal/BaTiO 3 /β-Ga 2 O 3 solar-blind photodetectors are reported. β-Ga 2 O 3 is a promising material for solar-blind photodetectors due to its large bandgap and the availability of low defect-density melt-grown substrates. In this work, structures are introduced that employ high-permittivity dielectric/semiconductor heterojunctions to enhance the performance of a Schottky photodetector. It is shown that integrating the high-k dielectric BaTiO 3 reduces the dark current by ≈10 4 , all but eliminates illumination induced Schottky barrier lowering, and increases the UV–vis rejection ratio by a factor greater than 9 × 10 3 compared to a Schottky photodetector. It is hypothesized that the high permittivity of the dielectric overcomes the influence of self-trapped holes in Ga 2 O 3 to reduce the peak electric field at the dielectric/metal interface, thereby eliminating the effects of Schottky barrier lowering on illuminated β-Ga 2 O 3 photodetectors. Additionally, it is hypothesized that the increase in the UV–vis rejection ratio is caused by the “dead layer” that forms at the BaTiO 3 /Pt interface.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Particle Acceleration by Magnetic Reconnection in Geospace

Particles are accelerated to very high, non-thermal energies during explosive energy-release phenomena in space, solar, and astrophysical plasma environments. While it has been established that magnetic reconnection plays an important role in the dynamics of Earth’s magnetosphere, it remains unclear how magnetic reconnection can further explain particle acceleration to non-thermal energies. Here we review recent progress in our understanding of particle acceleration by magnetic reconnection in Earth’s magnetosphere. With improved resolutions, recent spacecraft missions have enabled detailed studies of particle acceleration at various structures such as the diffusion region, separatrix, jets, magnetic islands (flux ropes), and dipolarization front. With the guiding-center approximation of particle motion, many studies have discussed the relative importance of the parallel electric field as well as the Fermi and betatron effects. However, in order to fully understand the particle acceleration mechanism and further compare with particle acceleration in solar and astrophysical plasma environments, there is a need for further investigation of, for example, energy partition and the precise role of turbulence.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Gate-Tunable Multiband Transport in ZrTe 5 Thin Devices

Interest in ZrTe 5 has been reinvigorated in recent years owing to its potential for hosting versatile topological electronic states and intriguing experimental discoveries. However, the mechanism of many of its unusual transport behaviors remains controversial: for example, the characteristic peak in the temperature-dependent resistivity and the anomalous Hall effect. Here, through employing a clean dry-transfer fabrication method in an inert environment, we successfully obtain high-quality ZrTe 5 thin devices that exhibit clear dual-gate tunability and ambipolar field effects. Such devices allow us to systematically study the resistance peak as well as the Hall effect at various doping densities and temperatures, revealing the contribution from electron–hole asymmetry and multiple-carrier transport. By comparing with theoretical calculations, we suggest a simplified semiclassical two-band model to explain the experimental observations. Finally, our work helps to resolve the longstanding puzzles on ZrTe 5 and could potentially pave the way for realizing novel topological states in the two-dimensional limit.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Overcoming Degradation Pathways to Achieve Stable Blue Perovskite Light-Emitting Diodes

Mixed halide (Br/Cl) perovskite nanocrystals (NCs) that represent an advanced blue emitter commonly suffer from spectral instability and poor lifespan; notably, the lack of understanding of the failure mechanisms of these devices has restricted the future progress. Here, we determine that the degradation of CsPbBr x Cl 3– x NCs containing blue light-emitting diodes (LEDs) is due to the combination of two effects. Cl – drift among adjoining NCs under an electric field is found to induce a Cl-deficient material region in multiple NC layers, which dominates the unstable electroluminescence and causes fast degradation in the corresponding devices. In comparison, the monolayer NC devices that feature restricted anion drift pathways exhibit better operational stability; however, excess hole injection is demonstrated to induce irreversible chlorine loss in NCs. Such a process that largely arises from electrochemical oxidation of Cl – initiates a mild device failure in operation of tens of minutes. Through revealing these mechanisms, we modulate the devices’ construction and operational conditions to achieve a longer lifespan.

14 SOLAR ENERGY↗
DOE OSTI2021

AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) using plasma deposited BN as gate dielectric

AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) were fabricated on Si substrates with a 10 nm boron nitride (BN) layer as a gate dielectric deposited by electron cyclotron resonance microwave plasma chemical vapor deposition. The material characterization of the BN/GaN interface was investigated by X-ray photoelectric spectroscopy (XPS) and UV photoelectron spectroscopy. The BN bandgap from the B1s XPS energy loss is ~5 eV consistent with sp2 bonding. The MISHEMTs exhibit a low off-state current of 1 × 10 –8 mA/mm, a high on/off current ratio of 10 9 , a threshold voltage of –2.76 V, a maximum transconductance of 32 mS/mm at a gate voltage of –2.1 V and a drain voltage of 1 V, a subthreshold swing of 69.1 mV/dec, and an on-resistance of 12.75 Ω·mm. The interface state density (D it ) is estimated to be less than 8.49 × 10 11 cm –2 eV –1 . Gate leakage current mechanisms were investigated by temperature-dependent current–voltage measurements from 300 K to 500 K. The maximum breakdown electric field is no less than 8.4 MV/cm. Poole–Frenkel emission and Fowler–Nordheim tunneling are indicated as the dominant mechanisms of the gate leakage through the BN gate dielectric at low and high electric fields, respectively.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Record >10 MV/cm mesa breakdown fields in Al 0.85 Ga 0.15 N/Al 0.6 Ga 0.4 N high electron mobility transistors on native AlN substrates

The ultra-wide bandgap of Al-rich AlGaN is expected to support a significantly larger breakdown field compared to GaN, but the reported performance thus far has been limited by the use of foreign substrates. In this Letter, the material and electrical properties of Al 0.85 Ga 0.15 N/Al 0.6 Ga 0.4 N high electron mobility transistors (HEMT) grown on a 2-in. single crystal AlN substrate are investigated, and it is demonstrated that native AlN substrates unlock the potential for Al-rich AlGaN to sustain large fields in such devices. We further study how Ohmic contacts made directly to a Si-doped channel layer reduce the knee voltage and increase the output current density. High-quality AlGaN growth is confirmed via scanning transmission electron microscopy, which also reveals the absence of metal penetration at the Ohmic contact interface and is in contrast to established GaN HEMT technology. Two-terminal mesa breakdown characteristics with 1.3 μm separation possess a record-high breakdown field strength of ~11.5 MV/cm for an undoped Al 0.6 Ga 0.4 N-channel layer. The breakdown voltages for three-terminal devices measured with gate-drain distances of 4 and 9 μm are 850 and 1500 V, respectively.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Overview of the COMPASS results *

COMPASS addressed several physical processes that may explain the behaviour of important phenomena. This paper presents results related to the main fields of COMPASS research obtained in the recent two years, including studies of turbulence, L–H transition, plasma material interaction, runaway electron, and disruption physics: Tomographic reconstruction of the edge/SOL turbulence observed by a fast visible camera allowed to visualize turbulent structures without perturbing the plasma. Dependence of the power threshold on the X-point height was studied and related role of radial electric field in the edge/SOL plasma was identified. The effect of high-field-side error fields on the L–H transition was investigated in order to assess the influence of the central solenoid misalignment and the possibility to compensate these error fields by low-field-side coils. Results of fast measurements of electron temperature during ELMs show the ELM peak values at the divertor are around 80% of the initial temperature at the pedestal. Liquid metals were used for the first time as plasma facing material in ELMy H-mode in the tokamak divertor. Good power handling capability was observed for heat fluxes up to 12 MW m –2 and no direct droplet ejection was observed. Partial detachment regime was achieved by impurity seeding in the divertor. The evolution of the heat flux footprint at the outer target was studied. Runaway electrons were studied using new unique systems—impact calorimetry, carbon pellet injection technique, wide variety of magnetic perturbations. Radial feedback control was imposed on the beam. Forces during plasma disruptions were monitored by a number of new diagnostics for vacuum vessel (VV) motion in order to contribute to the scaling laws of sideways disruption forces for ITER. Current flows towards the divertor tiles, incl. possible short-circuiting through PFCs, were investigated during the VDE experiments. The results support ATEC model and improve understanding of disruption loads.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2026

Towards fully predictive gyrokinetic full- f simulations: validation and triangularity studies in TCV

Designing economical magnetic confinement fusion power plants motivates computational tools that can estimate plasma behavior from engineering parameters without direct reliance on experimental measurement of the plasma profiles. In this work, we present full-f global long-wavelength gyrokinetic simulations of edge and scrape-off layer turbulence in tokamaks that use only magnetic geometry, heating power, and particle inventory as inputs. Unlike many modeling approaches that employ free parameters fitted to experimental data, raising uncertainties when extrapolating to reactor scales. This approach directly simulates turbulence and resulting profiles through gyrokinetics without such empirical adjustments. This is achieved via an adaptive sourcing algorithm in Gkeyll that strictly controls energy injection and emulates particle sourcing due to neutral recycling. We show that the simulated kinetic profiles compare reasonably well with Thomson scattering and Langmuir probe data for Tokamak á Configuration Variable (TCV) discharge #65125, and that the simulations reproduce characteristic features such as blob transport and self-organized electric fields. Applying the same framework to study triangularity effects suggests mechanisms contributing to the improved confinement reported for negative triangularity (NT). Simulations of TCV discharges #65125 and #65130 indicate that NT increases the E x B flow shear (by about 20% in these cases), which correlates with reduced turbulent losses and a modest change in the distribution of power exhaust to the vessel wall. While the physical models contain approximations that can be refined in future work, the predictive capability demonstrated here, evolving multiple profile relaxation times with kinetic electron and ion models in hundreds of GPU hours, indicates the feasibility of using Gkeyll to support design studies of fusion devices.

Hoffmann, Antoine Cyril David [Princeton Plasma Ph↗
DOE OSTI2024

Temperature-induced degradation of GaN HEMT: An in situ heating study

High-power electronics, such as GaN high electron mobility transistors (HEMTs), are expected to perform reliably in high-temperature conditions. This study aims to gain an understanding of the microscopic origin of both material and device vulnerabilities to high temperatures by real-time monitoring of the onset of structural degradation under varying temperature conditions. This is achieved by operating GaN HEMT devices in situ inside a transmission electron microscope (TEM). Electron-transparent specimens are prepared from a bulk device and heated up to 800 °C. High-resolution TEM (HRTEM), scanning TEM (STEM), energy-dispersive x-ray spectroscopy (EDS), and geometric phase analysis (GPA) are performed to evaluate crystal quality, material diffusion, and strain propagation in the sample before and after heating. Gate contact area reduction is visible from 470 °C accompanied by Ni/Au intermixing near the gate/AlGaN interface. Elevated temperatures induce significant out-of-plane lattice expansion at the SiNx/GaN/AlGaN interface, as revealed by geometry-phase GPA strain maps, while in-plane strains remain relatively consistent. Exposure to temperatures exceeding 500 °C leads to almost two orders of magnitude increase in leakage current in bulk devices in this study, which complements the results from our TEM experiment. The findings of this study offer real-time visual insights into identifying the initial location of degradation and highlight the impact of temperature on the bulk device’s structure, electrical properties, and material degradation.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Product ion distributions using H 3 O + proton-transfer-reaction time-of-flight mass spectrometry (PTR-ToF-MS): mechanisms, transmission effects, and instrument-to-instrument variability

Abstract. Proton-transfer-reaction mass spectrometry (PTR-MS) using hydronium ion (H3O+) ionization is widely used for the measurement of volatile organic compounds (VOCs) both indoors and outdoors. H3O+ ionization, as well as the associated chemistry in an ion–molecule reactor, is known to generate product ion distributions (PIDs) that include other product ions besides the proton-transfer product. We present a method, using gas-chromatography pre-separation, for quantifying PIDs from PTR-MS measurements of nearly 100 VOCs of different functional types including alcohols, ketones, aldehydes, acids, aromatics, organohalides, and alkenes. We characterize instrument configuration effects on PIDs and find that reactor reduced electric field strength (E/N), ion optic voltage gradients, and quadrupole settings have the strongest impact on measured PIDs. Through an interlaboratory comparison of PIDs measured from calibration cylinders, we characterized the variability of PID production from the same model of PTR-MS across seven participating laboratories. Product ion variability was generally smaller (e.g., < 20 %) for ions with larger contributions to the PIDs (e.g., > 0.30) but less predictable for product ions formed through O2+ and NO+ reactions. We present a publicly available library of H3O+ PTR-MS PIDs that will be updated periodically with user-provided data for the continued investigation into instrument-to-instrument variability of PIDs.

Link, Michael F. (ORCID:0000000218412455)↗