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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 757 records · Page 42
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Dislocation-position fluctuations in solid 4He as collective variables in a quantum crystal

Abstract Quantum behavior at mesoscopic length scales is of significant interest, both from a fundamental-physics standpoint, as well as in the context of technological advances. In this light, the description of collective variables comprising large numbers of atoms, but nevertheless displaying non-classical behavior, is a fundamental problem. Here, we show that an effective-Hamiltonian approach for such variables, as has been applied to describe the quantum behavior of coupled qubit/oscillator systems, can also be very useful in understanding intrinsic behavior of quantum materials. We consider lattice dislocations – naturally occurring mesoscopic line defects in crystals – in the prototypical bosonic quantum crystal, solid 4 He. For this purpose, we map fully atomistic quantum simulations onto effective one-dimensional Hamiltonians in which the collective dislocation-position variables are represented as interacting, massive quantum particles. The results provide quantitative understanding of several experimental observations in solid 4 He.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

One dislocation at a time

The direct observation of enhanced dislocation mobility in iron by in situ electron microscopy offers key insights and adds to the ongoing debate on the mechanisms of hydrogen embrittlement. The tiniest atom in nature, hydrogen, is pervasive and sneaky. When hydrogen atoms, either from gas or liquid sources, come into contact with a metal, they rush into the solid and squeeze through the narrow spaces between the host atoms. Being chemically active, atomic hydrogen can potentially bind to either host or impurity atoms, forming hydrides and thus changing a material’s properties. Metals, which are well known and widely used in industry for their strength and ductility, can become dangerously brittle when exposed to hydrogen. Furthermore, this phenomenon is known as hydrogen embrittlement and can lead to catastrophic failure of a load-bearing part. For example, the hydrogen produced when water molecules break apart in coolants in a nuclear reactor can cause sudden failure of the pressure vessel. In another example, although blending hydrogen in natural-gas pipelines provides a promising pathway to transition into the hydrogen economy, it could lower the fatigue resistance of the pipeline steel, making it more susceptible to crack growth due to cyclic loading induced by pressure fluctuations in the pipeline. Remarkably, perhaps as a result of a multitude of recognized failure mechanisms in which hydrogen can potentially participate, it still remains unknown exactly why hydrogen makes a metal brittle. Now, writing in Nature Materials, Longchao Huang and colleagues present unambiguous experimental observations of hydrogen-enhanced dislocation mobility in iron, offering key insights into the hydrogen embrittlement mechanisms.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Graphene-assisted spontaneous relaxation towards dislocation-free heteroepitaxy

While conventional homoepitaxy forms high-quality epitaxial layers, the limited set of material systems for commercially available wafers restricts the range of materials that can be grown homoepitaxially. At the same time, conventional heteroepitaxy of lattice-mismatched systems produces dislocations above a critical strain energy to release the accumulated strain energy as the film thickness increases. The formation of dislocations, which severely degrade electronic/photonic device performances, is fundamentally unavoidable in highly lattice-mismatched epitaxy. Herein, we introduce a unique mechanism of relaxing misfit strain in heteroepitaxial films that can enable effective lattice engineering. We have observed that heteroepitaxy on graphene-coated substrates allows for spontaneous relaxation of misfit strain owing to the slippery graphene surface while achieving single-crystalline films by reading the atomic potential from the substrate. This spontaneous relaxation technique could transform the monolithic integration of largely lattice-mismatched systems by covering a wide range of the misfit spectrum to enhance and broaden the functionality of semiconductor devices for advanced electronics and photonics.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

Investigating the dislocation reactions on Σ3{111} twin boundary during deformation twin nucleation process in an ultrafine-grained high-manganese steel

Abstract Some of ultrafine-grained (UFG) metals including UFG twinning induced plasticity (TWIP) steels have been found to overcome the paradox of strength and ductility in metals benefiting from their unique deformation modes. Here, this study provides insights into the atomistic process of deformation twin nucleation at Σ3{111} twin boundaries, the dominant type of grain boundary in this UFG high manganese TWIP steel. In response to the applied tensile stresses, grain boundary sliding takes place which changes the structure of coherent Σ3{111} twin boundary from atomistically smooth to partly defective. High resolution transmission electron microscopy demonstrates that the formation of disconnection on Σ3{111} twin boundaries is associated with the motion of Shockley partial dislocations on the boundaries. The twin boundary disconnections act as preferential nucleation sites for deformation twin that is a characteristic difference from the coarse-grained counterpart, and is likely correlated with the lethargy of grain interior dislocation activities, frequently seen in UFG metals. The deformation twin nucleation behavior will be discussed based on in-situ TEM deformation experiments and nanoscale strain distribution analyses results.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Dislocation strain as the mechanism of phonon scattering at grain boundaries

Thermal conductivities of polycrystalline thermoelectric materials are satisfactorily calculated by replacing the commonly used Casimir model (freqeuncy-independent) with grain boundary dislocation strain model (frequency-dependent) of Klemens. It is demonstrated that the grain boundaries are better described as a collection of dislocations rather than perfectly scattering interfaces.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Measurement of probability distributions for internal stresses in dislocated crystals

Here, we analyse residual stress distributions obtained from various crystal systems using high resolution electron backscatter diffraction (EBSD) measurements. Histograms showing stress probability distributions exhibit tails extending to very high stress levels. We demonstrate that these extreme stress values are consistent with the functional form that should be expected for dislocated crystals. Analysis initially developed by Groma and co-workers for X-ray line profile analysis and based on the so-called “restricted second moment of the probability distribution” can be used to estimate the total dislocation density. The generality of the results are illustrated by application to three quite different systems, namely, face centred cubic Cu deformed in uniaxial tension, a body centred cubic steel deformed to larger strain by cold rolling, and hexagonal InAlN layers grown on misfitting sapphire and silicon carbide substrates.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si

We investigate the impact of threading dislocation density on the reliability of 1.3 μm InAs quantum dot lasers epitaxially grown on Si. A reduction in the threading dislocation density from 2.8 × 108 cm−2 to 7.3 × 106 cm−2 has improved the laser lifetime by about five orders of magnitude when aged continuous-wave near room temperature (35 °C). We have achieved extrapolated lifetimes (time to double initial threshold) more than 10 × 106 h. An accelerated laser aging test at an elevated temperature (60 °C) reveals that p-modulation doped quantum dot lasers on Si retain superior reliability over unintentionally doped ones. These results suggest that epitaxially grown quantum dot lasers could be a viable approach to realize a reliable, scalable, and efficient light source on Si.

Jung, Daehwan↗
DOE OSTI2015

Implicit integration methods for dislocation dynamics

In dislocation dynamics simulations, strain hardening simulations require integrating stiff systems of ordinary differential equations in time with expensive force calculations, discontinuous topological events, and rapidly changing problem size. Current solvers in use often result in small time steps and long simulation times. Faster solvers may help dislocation dynamics simulations accumulate plastic strains at strain rates comparable to experimental observations. Here, this paper investigates the viability of high order implicit time integrators and robust nonlinear solvers to reduce simulation run times while maintaining the accuracy of the computed solution. In particular, implicit Runge-Kutta time integrators are explored as a way of providing greater accuracy over a larger time step than is typically done with the standard second-order trapezoidal method. In addition, both accelerated fixed point and Newton's method are investigated to provide fast and effective solves for the nonlinear systems that must be resolved within each time step. Results show that integrators of third order are the most effective, while accelerated fixed point and Newton's method both improve solver performance over the standard fixed point method used for the solution of the nonlinear systems.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Rotational transition, domain formation, dislocations, and defects in vortex systems with combined sixfold and twelvefold anisotropic interactions

We introduce a phenomenological model for a pairwise repulsive interaction potential of vortices in a type-II superconductor, consisting of superimposed sixfold and twelvefold anisotropies. Using numerical simulations we study how the vortex lattice configuration varies as the magnitudes of the two anisotropic interaction terms change. A triangular lattice appears for all values, and rotates through 30 ° as the ratio of the sixfold and twlevefold anisotropy amplitudes is varied, in agreement with experimental results. The transition causes the vortex lattice to split into domains that have rotated clockwise or counterclockwise, with grain boundaries that are “decorated” by dislocations consisting of fivefold and sevenfold coordinated vortices. We also find intradomain dislocations and defects, and characterize them in terms of their energy cost. We discuss how this model could be generalized to other particle-based systems with anisotropic interactions, such as colloids, and consider the limit of very large anisotropy where it is possible to create cluster crystal states.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Thermodynamic analysis of the Livermore molecular-dynamics simulations of dislocation-mediated plasticity

Results of recent large-scale molecular dynamics simulations of dislocation-mediated solid plasticity are compared with predictions of the statistical thermodynamic theory of these phenomena. These computational and theoretical analyses are in substantial agreement with each other in both their descriptions of strain-rate-dependent steady plastic flows and of transient stress peaks associated with initially small densities of dislocations. Lastly, the comparisons between the numerical simulations and basic theory reveal inconsistencies in some conventional phenomenological descriptions of solid plasticity.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2015

Full elastic strain and stress tensor measurements from individual dislocation cells in copper through-Si vias

We report non-destructive measurements of the full elastic strain and stress tensors from individual dislocation cells distributed along the full extent of a 50 mm-long polycrystalline copper via in Si is reported. Determining all of the components of these tensors from sub-micrometre regions within deformed metals presents considerable challenges. The primary issues are ensuring that different diffraction peaks originate from the same sample volume and that accurate determination is made of the peak positions from plastically deformed samples. For these measurements, three widely separated reflections were examined from selected, individual grains along the via. The lattice spacings and peak positions were measured for multiple dislocation cell interiors within each grain and the cell-interior peaks were sorted out using the measured included angles. A comprehensive uncertainty analysis using a Monte Carlo uncertainty algorithm provided uncertainties for the elastic strain tensor and stress tensor components.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Dislocation-driven growth of two-dimensional lateral quantum-well superlattices

Here, the advent of two-dimensional (2D) materials has led to extensive studies of heterostructures for novel applications. 2D lateral multiheterojunctions and superlattices have been recently demonstrated, but the available growth methods can only produce features with widths in the micrometer or, at best, 100-nm scale and usually result in rough and defective interfaces with extensive chemical intermixing. Widths smaller than 5 nm, which are needed for quantum confinement effects and quantum-well applications, have not been achieved. We demonstrate the growth of sub–2-nm quantum-well arrays in semiconductor monolayers, driven by the climb of misfit dislocations in a lattice-mismatched sulfide/selenide heterointerface. Density functional theory calculations provide an atom-by-atom description of the growth mechanism. The calculated energy bands reveal type II alignment suitable for quantum wells, suggesting that the structure could, in principle, be turned into a “conduit” of conductive nanoribbons for interconnects in future 2D integrated circuits via n-type modulation doping. This misfit dislocation–driven growth can be applied to different combinations of 2D monolayers with lattice mismatch, paving the way to a wide range of 2D quantum-well superlattices with controllable band alignment and nanoscale width.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Electronic descriptors for dislocation deformation behavior and intrinsic ductility in bcc high-entropy alloys

Controlling the balance between strength and damage tolerance in high-entropy alloys (HEAs) is central to their application as structural materials. Materials discovery efforts for HEAs are therefore impeded by an incomplete understanding of the chemical factors governing this balance. Through first-principles calculations, this study explores factors governing intrinsic ductility of a crucial subset of HEAs—those with a body-centered cubic (bcc) crystal structure. Analyses of three sets of bcc HEAs comprising nine different compositions reveal that alloy chemistry profoundly influences screw dislocation core structure, dislocation vibrational properties, and intrinsic ductility parameters derived from unstable stacking fault and surface energies. Key features in the electronic structure are identified that correlate with these properties: the fraction of occupied bonding states and bimodality of the d-orbital density of states. The findings enhance the fundamental understanding of the origins of intrinsic ductility and establish an electronic structure–based framework for computationally accelerated materials discovery and design.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Parallel Dislocation Simulator

ParaDiS, or Parallel Dislocation Simulator, is a simulation tool that performs direct numerical simulation of dislocation ensembles, the carriers of plasticity, to predict the strength in crystalline materials from the fundamental physics of defect motion, evolution, and interaction. The code has been successfully deployed on high performance computing architectures and used to study the origins of strength and strain hardening for cubic crystals, the strength of micro-pillars, and irradiated materials at LLNL. The ParaDiS code has been successfully deployed on more than one hundred thousand CPU's with over ten million active degrees of freedom.

Bulatov, Vasily↗
DOE OSTI2018

Nanoindentation of high-purity vapor deposited lithium films: A mechanistic rationalization of the transition from diffusion to dislocation-mediated flow

Nanoindentation experiments performed in high-purity vapor deposited lithium films at 31 °C reveal a strain rate and length scale dependence in the stress at which pop-in type events signal an abrupt transition from diffusion to dislocation-mediated flow. The stress level at which the transition to dislocation-mediated flow occurs varies with the strain rate and ranges from 88 to 208 times larger than the nominal yield strength of bulk, polycrystalline lithium. Variation in the indentation strain rate reveals the relationship between the stress required to initiate the transition and the length scale at which the transition occurs follows the power-law relation, hardness × depth 1.17 = 1.545 N/m 0.83 , where the magnitude of the exponent and constant reflect the defect structure of the film. In conclusion, a rationalization of the transition is provided through direct comparisons between the measured cumulative distribution function (CDF) and the CDF hypothesized for the activation of a Frank–Read source.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Geometrically Necessary Dislocation Analysis of Deformation Mechanism for Magnesium under Fatigue Loading at 0 °C

This study focused on the analysis of geometrically necessary dislocation (GND) densities for five selected fine-grained magnesium samples. Among the samples, three were tested under different fatigue-loading conditions at 0 °C, one experienced quasi-static tensile loading at 0 °C, and one represented the as-rolled state. The fatigue-tested samples were chosen according to the relationship between the maximum loading stress of a test and the material’s yield strength. This study provides new insights on the deformation mechanism of fine-grained magnesium at 0 °C. It is observed that the average GND densities were increased by 95~111% for the tested samples when compared with the as-rolled sample. It is especially interesting that there is a significant increase in the average GND density for the sample that experienced the fatigue loading with a low-maximum applied stress, and the maximum applied stress was lower than the material’s yield strength. This observation implies that the grain boundary mediated the dislocation-emission mechanism.

Li, Qizhen↗
NASA NTRS1973

Dislocation generation during early stage sintering.

Discussion of the effects of capillarity-induced stresses on dislocations during early stage sintering. A special version of Hirth's (1963) theoretical calculation procedures modified to describe dislocation nucleation on planes meeting the sintering body's neck surface obliquely is shown to predict plastic flow at stress levels know to exist between micron size metal particles in the early stages of sintering.

Sheehan, J. E.↗