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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 757 records · Page 42
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Cryogenic “Iodide-Tagging” Photoelectron Spectroscopy: A Sensitive Probe for Specific Binding Sites of Amino Acids

This work showcases cryogenic and temperature-dependent “iodide-tagging” photoelectron spectroscopy to probe specific binding sites of amino acids using the glycine-iodide complex (Gly?I-) as a case study. Multiple Gly?I- isomers were generated from ambient electrospray ionization and kinetically isolated in a cryogenic ion trap. These structures were characterized with temperature-dependent “iodide-tagging” negative ion photoelectron spectroscopy (NIPES) where iodide was used as the “messenger” to interpret electronic energetics and structural information of various Gly?I- isomers. Accompanied by theoretical computations and Franck-Condon simulations, a total of five cluster structures have been identified along with their various binding motifs. This work demonstrates that “iodide-tagging” NIPES is a powerful general means for probing specific binding interactions in biological molecules of interest.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Development of an MKID frequency-to-pixel LED mapper for SPT-3G+

SPT-3G+ is the next-generation camera for the South Pole Telescope (SPT). SPT is designed to measure the cosmic microwave background (CMB) and the mm/sub-mm sky. The planned focal plane consists of 34,000 microwave kinetic inductance detectors (MKIDs), divided among three observing bands centered at 220, 285, and 345 GHz. Each readout line is designed to measure 800 MKIDs over a 500 MHz bandwidth, which places stringent constraints on the accuracy of the frequency placement required to limit resonator collisions that reduce the overall detector yield. To meet this constraint, we are developing a two-step process that first optically maps the resonance to a physical pixel location, and then next trims the interdigitated capacitor (IDC) to adjust the resonator frequency. We present a cryogenic LED apparatus operable at 300 mK for the optical illumination of SPT-3G+ detector arrays. We demonstrate integration of the LED controls with the GHz readout electronics (RF-ICE) to take data on an array of prototype SPT-3G+ detectors. We show that this technique is useful for characterizing defects in the resonator frequency across the detector array and will allow for improvements in the detector yield.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

The primary gas phase hydration shell of hydroxide

The number of water molecules in hydroxide’s primary hydration shell has been long debated to be three from the interpretation of experimental data and four from theoretical studies. Here, we provide direct evidence for the presence of a fourth water molecule in hydroxide’s primary hydration shell from a combined study based on high-resolution cryogenic experimental photoelectron spectroscopy and high-level quantum chemical computations. Well-defined spectra of OH - (H 2 O) n clusters (n = 2 to 5) yield accurate electron binding energies, which are, in turn, used as key signatures of the underlying molecular conformations. Although the smaller OH - (H 2 O) 3 and OH - (H 2 O) 4 clusters adopt close-lying conformations with similar electron binding energies that are hard to distinguish, the OH - (H 2 O) 5 cluster clearly has a predominant conformation with a four-coordinated hydroxide binding motif, a finding that unambiguously determines the gas phase coordination number of hydroxide to be four.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Recent Progress Toward a Conduction-Cooled Superconducting Radiofrequency Electron Gun

High-repetition-rate electron sources have widespread applications. This contribution discusses the progress toward a proof-of-principle demonstration for a conduction-cooled electron source. The source consists of a simple modification of an elliptical cavity that enhances the field electric field at the photocathode surface. The source was cooled to cryogenic temperatures and preliminary measurements for the quality factor and accelerating field were performed. Additionally, we present future plans to improve the source along with simulated beam-dynamics performances.

43 PARTICLE ACCELERATORS↗
DOE OSTI2023

A High-Magnetic-Field Polarized 3He Target for JLab's CLAS12 Spectrometer

We are developing a polarized 3He target for use in high luminosity electron scattering experiments within the high magnetic field environment of Jefferson Lab's CLAS12 spectrometer. By combining recent advancements in metastability exchange optical pumping (MEOP) of 3He with cryogenic, double-cell target methods as used for the MIT-Bates 88-02 experiment, a target with polarization and gas density comparable to traditional, low-field polarized 3He targets can be reached within high magnetic field environments. We have begun polarizing sealed 3He cells at fields up to 5 T at Jefferson Lab, and are preparing for our first tests exploring polarization performance versus magnetic field and gas pressure in a single cell before we move to the construction of a full, cryogenic, double-cell prototype target. A key focus of our research is the determination of polarization relaxation under the irradiation of an ionizing particle beam within high magnetic fields.

Maxwell, James↗
NASA NTRS1981

Cryogenic switched MOSFET characterization

Both p channel and n channel enhancement mode MOSFETs can be readily switched on and off at temperatures as low as 2.8 K so that switch sampled readout of a VLWIR Ge:Ga focal plane is electronically possible. Noise levels as low as 100 rms electrons per sample (independent of sample rate) can be achieved using existing p channel MOSFETs, at overall rates up to 30,000 samples/second per multiplexed channel (e.g., 32 detectors at a rate of almost 1,000 frames/second). Run of the mill devices, including very low power dissipation n channel FETs would still permit noise levels of the order of 500 electrons/sample.

Source record↗
NASA NTRS1985

Cryogenic operation of pseudomorphic AlGaAs/InGaAs single-quantum-well MODFETs

The 77 K operation of AlGaAs/InGaAs MODFETs has been investigated. The structures, grown by MBE, make use of a 200 A undoped In(0.15)Ga(0.85)As quantum well for electron confinement and an Si-doped Al(0.15)Ga(0.85)As top barrier. The MODFETs with 1 micron gate lengths exhibit extrinsic transconductances of 360 mS/mm and maximum currents of 310 mA/mm at 77 K. The use of a low Al mole fraction AlGaAs/InGaAs heterojunction makes it possible to avoid the persistent trapping effects encountered in AlGaAs/GaAs MODFETs without sacrificing device performance.

Masselink, W. T.↗
NASA NTRS1988

Research Reports: 1988 NASA/ASEE Summer Faculty Fellowship Program

The basic objectives are to further the professional knowledge of qualified engineering and science faculty members; to stimulate an exchange of ideas between participants and NASA: to enrich and refresh the research and teaching activities of the participants' institutions; and to contribute to the research objectives of the NASA centers. Topics addressed include: cryogenics; thunderstorm simulation; computer techniques; computer assisted instruction; system analysis weather forecasting; rocket engine design; crystal growth; control systems design; turbine pumps for the Space Shuttle Main engine; electron mobility; heat transfer predictions; rotor dynamics; mathematical models; computational fluid dynamics; and structural analysis.

Freeman, L. Michael↗
NASA NTRS1991

NASA SBIR product catalog, 1991

This catalog is a partial list of products of NASA SBIR (Small Business Innovation Research) projects that have advanced to some degree into Phase 3. While most of the products evolved from work conducted during SBIR Phase 1 and 2, a few advanced to commercial status solely from Phase 1 activities. The catalog presents information provided to NASA by SBIR contractors who wished to have their products exhibited at Technology 2001, a NASA-sponsored technology transfer conference held in San Jose, California, on December 4, 5, and 6, 1991. The catalog presents the product information in the following technology areas: computer and communication systems; information processing and AI; robotics and automation; signal and image processing; microelectronics; electronic devices and equipment; microwave electronic devices; optical devices and lasers; advanced materials; materials processing; materials testing and NDE; materials instrumentation; aerodynamics and aircraft; fluid mechanics and measurement; heat transfer devices; refrigeration and cryogenics; energy conversion devices; oceanographic instruments; atmosphere monitoring devices; water management; life science instruments; and spacecraft electromechanical systems.

Source record↗
NASA NTRS2008

Effects of Low Temperature on Charging of Spacecraft Dielectrics

Spacecraft dielectric charging, sometimes called deep-dielectric-charging or bulk-charging, occurs when high energy electrons imbed themselves in dielectric materials, and the charge density builds up, sometimes to breakdown levels. Charges usually bleed off slowly due to material conductivity. At very low (cryogenic) temperatures, the dielectric conductivity decreases until charges may remain and build up over weeks, months, or years. In those cases, the guidelines given in NASA and industry documents for when dielectric charging may become important are misleading. Arcing tests of spacecraft cables at liquid nitrogen temperatures and very low flux levels have been done at NASA MSFC for the JWST Project. In this paper, we describe the results of those tests and analyze their important implications for cryogenic spacecraft cable design and construction.

Ferguson, Dale C.↗
NASA NTRS2008

Effects of Low Temperature on Charging of Spacecraft Dielectrics

Spacecraft dielectric charging, sometimes called deep-dielectric-charging or bulk-charging, occurs when high energy electrons imbed themselves in dielectric materials, and the charge density builds up, sometimes to breakdown levels. Charges usually bleed off slowly due to material conductivity. At very low (cryogenic) temperatures, the dielectric conductivity decreases until charges may remain and build up over weeks, months, or years. In those cases, the guidelines given in NASA and industry documents for when dielectric charging may become important are misleading. Arcing tests of spacecraft cables at liquid nitrogen temperatures and very low flux levels have been done at NASA MSFC for the JWST Project. In this paper, we describe the results of those tests and analyze their important implications for cryogenic spacecraft cable design and construction.

Ferguson, Dale C.↗
NASA NTRS1993

Miniaturization in x ray and gamma ray spectroscopy

The paper presents advances in two new sensor technologies and a miniaturized associated electronics technology which, when combined, can allow for very significant miniaturization and for the reduction of weight and power consumption in x-ray and gamma-ray spectroscopy systems: (1) Mercuric iodide (HgI2) x-ray technology, which allows for the first time the construction of truly portable, high-energy resolution, non-cryogenic x-ray fluorescence (XRF) elemental analyzer systems, with parameters approaching those of laboratory quality cryogenic instruments; (2) the silicon avalanche photodiode (APD), which is a solid-state light sensitive device with internal amplification, capable of uniquely replacing the vacuum photomultiplier tube in scintillation gamma-ray spectrometer applications, and offering substantial improvements in size, ruggedness, low power operation and energy resolution; and (3) miniaturized (hybridized) low noise, low power amplification and processing electronics, which take full advantage of the favorable properties of these new sensors and allow for the design and fabrication of advanced, highly miniaturized x-ray and gamma-ray spectroscopy systems. The paper also presents experimental results and examples of spectrometric systems currently under construction. The directions for future developments are discussed.

Iwanczyk, Jan S.↗
NASA NTRS2009

Operation of SOI P-Channel Field Effect Transistors, CHT-PMOS30, under Extreme Temperatures

Electronic systems are required to operate under extreme temperatures in NASA planetary exploration and deep space missions. Electronics on-board spacecraft must also tolerate thermal cycling between extreme temperatures. Thermal management means are usually included in today s spacecraft systems to provide adequate temperature for proper operation of the electronics. These measures, which may include heating elements, heat pipes, radiators, etc., however add to the complexity in the design of the system, increases its cost and weight, and affects its performance and reliability. Electronic parts and circuits capable of withstanding and operating under extreme temperatures would reflect in improvement in system s efficiency, reducing cost, and improving overall reliability. Semiconductor chips based on silicon-on-insulator (SOI) technology are designed mainly for high temperature applications and find extensive use in terrestrial well-logging fields. Their inherent design offers advantages over silicon devices in terms of reduced leakage currents, less power consumption, faster switching speeds, and good radiation tolerance. Little is known, however, about their performance at cryogenic temperatures and under wide thermal swings. Experimental investigation on the operation of SOI, N-channel field effect transistors under wide temperature range was reported earlier [1]. This work examines the performance of P-channel devices of these SOI transistors. The electronic part investigated in this work comprised of a Cissoid s CHT-PMOS30, high temperature P-channel MOSFET (metal-oxide semiconductor field-effect transistor) device [2]. This high voltage, medium-power transistor is designed for geothermal well logging applications, aerospace and avionics, and automotive industry, and is specified for operation in the temperature range of -55 C to +225 C. Table I shows some specifications of this transistor [2]. The CHT-PMOS30 device was characterized at various temperatures over the range of -190 C to +225 C in terms of its voltage/current characteristic curves. The test temperatures included +22, -50, -100, -150, -175, -190, +50, +100, +150, +175, +200, and +225 C. Limited thermal cycling testing was also performed on the device. These tests consisted of subjecting the transistor to a total of twelve thermal cycles between -190 C and +225 C. A temperature rate of change of 10 C/min and a soak time at the test temperature of 10 minutes were used throughout this work. Post-cycling measurements were also performed at selected temperatures. In addition, re-start capability at extreme temperatures, i.e. power switched on while the device was soaking for a period of 20 minutes at the test temperatures of -190 C and +225 C, was investigated.

Patterson, Richard↗
NASA NTRS2008

Composite Materials for Low-Temperature Applications

Composite materials with improved thermal conductivity and good mechanical strength properties should allow for the design and construction of more thermally efficient components (such as pipes and valves) for use in fluid-processing systems. These materials should have wide application in any number of systems, including ground support equipment (GSE), lunar systems, and flight hardware that need reduced heat transfer. Researchers from the Polymer Science and Technology Laboratory and the Cryogenics Laboratory at Kennedy Space Center were able to develop a new series of composite materials that can meet NASA's needs for lightweight materials/composites for use in fluid systems and also expand the plastic-additive markets. With respect to thermal conductivity and physical properties, these materials are excellent alternatives to prior composite materials and can be used in the aerospace, automotive, military, electronics, food-packaging, and textile markets. One specific application of the polymeric composition is for use in tanks, pipes, valves, structural supports, and components for hot or cold fluid-processing systems where heat flow through materials is a problem to be avoided. These materials can also substitute for metals in cryogenic and other low-temperature applications. These organic/inorganic polymeric composite materials were invented with significant reduction in heat transfer properties. Decreases of 20 to 50 percent in thermal conductivity versus that of the unmodified polymer matrix were measured. These novel composite materials also maintain mechanical properties of the unmodified polymer matrix. These composite materials consist of an inorganic additive combined with a thermoplastic polymer material. The intrinsic, low thermal conductivity of the additive is imparted into the thermoplastic, resulting in a significant reduction in heat transfer over that of the base polymer itself, yet maintaining most of the polymer's original properties. Normal polymer processing techniques can turn these composite materials into unique, custom parts for ground support, Shuttle, and Constellation needs. We fabricated test specimens of the composite and base materials for thermal and mechanical characterization and found that the strength of the composite material at nominal-percentage loading remained relatively unchanged from the base material.

Source record↗
DOE OSTI2024

A 32-Channel Cryo-CMOS ASIC for SNSPD Biasing and Readout with Picosecond

Superconducting nanowire single-photon detectors (SNSPD) are a promising technology for particle detection. Although SNSPDs have demonstrated picosecond timing accuracy, scaling up large arrays has proved challenging. In this work, we introduce a 32-channel cryo-CMOS application-specific integrated circuit (ASIC) that can be tightly integrated with SNSPD arrays. The ASIC is designed to operate at a temperature of 4K and can perform up to 32 simultaneous timing measurements with a root-mean-square (RMS) accuracy of 8.0ps. The ASIC includes on-chip circuitry for externally biasing superconducting devices, low-noise amplifiers for reading superconducting devices, high-resolution time-to-digital converters (TDC) for time-tagging events, and serializers for transmitting data to room-temperature electronics. The ASIC is manufactured in a 22nm FDSOI process and occupies an area of 4.0mm x 1.0mm. The performance of the ASIC was verified using custom cryogenic device models internally developed for the 22nm SOI process. Measurement results will be presented at the conference.

Fredenburg, Jeff↗
DOE OSTI2024

A 32-Channel Cryo-CMOS ASIC for SNSPD Biasing and Readout with Picosecond Timing

Superconducting nanowire single-photon detectors (SNSPD) are a promising technology for particle detection. Although SNSPDs have demonstrated picosecond timing accuracy, scaling up large arrays has proved challenging. In this work, we introduce a 32-channel cryo-CMOS application-specifc integrated circuit (ASIC) that can be tightly integrated with SNSPD arrays. The ASIC is designed to operate at a temperature of 4K and can perform up to 32 simultaneous timing measurements with a root-mean-square (RMS) accuracy of 8.0ps. The ASIC includes on-chip circuitry for externally biasing superconducting devices, low-noise amplifers for reading superconducting devices, high-resolution time-to-digital converters (TDC) for time-tagging events, and serializers for transmitting data to room-temperature electronics. The ASIC is manufactured in a 22nm FDSOI process and occupies an area of 4.0mm x 1.0mm. The performance of the ASIC was verifed using custom cryogenic device models internally developed for the 22nm SOI process. Measurement results will be presented at the conference.

Fredenburg, Jeff↗
NASA NTRS2002

Cryogenetically Cooled Field Effect Transistors for Low-Noise Systems

Recent tends in the design, fabrication and use of High-Electron-Mobility-Transistors (HEMT) in low noise amplifiers are reviewed. Systems employing these devices have achieved the lowest system noise for wavelengths greater than three millimeters with relatively modest cryogenic cooling requirements in a variety of ground and space based applications. System requirements which arise in employing such devices in imaging applications are contrasted with other leading coherent detector candidates at microwave wavelengths. Fundamental and practical limitations which arise in the context of microwave application of field effect devices at cryogenic temperatures will be discussed from a component and systems point of view.

Wollack, Edward J.↗
NASA NTRS2018

Extreme Temperature Performance of Automotive-Grade Small Signal Bipolar Junction Transistors

Electronics designed for space exploration missions must display efficient and reliable operation under extreme temperature conditions. For example, lunar outposts, Mars rovers and landers, James Webb Space Telescope, Europa orbiter, and deep space probes represent examples of missions where extreme temperatures and thermal cycling are encountered. Switching transistors, small signal as well as power level devices, are widely used in electronic controllers, data instrumentation, and power management and distribution systems. Little is known, however, about their performance in extreme temperature environments beyond their specified operating range; in particular under cryogenic conditions. This report summarizes preliminary results obtained on the evaluation of commercial-off-the-shelf (COTS) automotive-grade NPN small signal transistors over a wide temperature range and thermal cycling. The investigations were carried out to establish a baseline on functionality of these transistors and to determine suitability for use outside their recommended temperature limits.

Thermal Cycling↗