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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 757 records · Page 42
All sourcesNASA NTRSDOE OSTI
NASA NTRS1969

Dielectric materials for use in thin-film capacitors

Investigation report presents details of dielectric properties of various metals measured at 300 degrees K for thermally evaporated oxides from 300 to 6000 A in thickness. It is relevant to the medium of integrated circuitry.

Carr, H. E.↗
NASA NTRS1975

Improved fabrication of electrolytic capacitors

After processing parts for assembly, insulative cup is fitted to bottom of can, then electrolytic solution consisting of white sulfuric acid gel is inserted into can. Pellet is put in can and is fitted tightly into cup. Finally, bead weld is formed between can and header plug.

Gamari, F. J.↗
NASA NTRS1976

Fixed charge in Cr-metallized MOS capacitors

It is pointed out that the reported measurements are useful in a study of interface charge distributions. Measurements of surface-state density at the SiO2 interface given information concerning the effect of the layer thickness on the flat-band interface charge. Other measurements provide data for a determination of the silicon-silica flat-band interface charge, the metal-silica interface charge, and the difference in barrier energies at the interfaces. Measurements of Fowler-Nordheim currents as a function of oxide thickness can be used for the determination of charge distribution in the area next to the metal-silica interface. The investigation shows that the silicon-silica interface is independent of thickness down to thicknesses as low as 40 A.

Lewicki, G.↗
NASA NTRS1978

Trapping effects in irradiated and avalanche-injected MOS capacitors

The trapping parameters for holes, and for electrons in the presence of trapped holes, have been measured from a set of wafers with different oxide thickness processed under controlled conditions. The trap cross-sections and densities indicate at least three trap species, including an interfacial species, a dominant bulk species which is determined to tail off from the silicon interface, and a third, lower density bulk species that is distributed throughout the oxide.

Bakowski, M.↗
NASA NTRS1980

Measuring radiation effects on MOS capacitors

Electron injection technique serves as powerful probe of trapped hole distribution after irradiation because it was determined that electrons only annihilate trapped holes. Other effects, such as other electron traps and interface state generation, are negligible in injection range used. Trap cross sections and densities indicate at least three trap species; interfacial species, dominant bulk species determined to tail off from silicon interface, and lower density and cross section species that may be distributed throughout bulk of oxide.

Bakowski, M.↗
NASA NTRS1981

Specifying capacitors for performance and reliability in switching power supplies

The three most commonly used switching circuits are the full bridge converter, the half bridge converter, and the forward converter. All three circuits use the same pulse width concept for regulation with the major difference being how many transistors are used for power handling. The full bridge uses four transistors, the half bridge uses two, and the forward converter uses one. In practical design, forward converters are used at 300 watts and below, half bridges at 300 to 600 watts, and full bridges above 600 watts. Regulation is achieved by alternately saturating diagonal pairs of transistors in the full bridge, alternately saturating transistors in the half bridge, and simply pulse modulating one transistor in the forward converter.

Greenhalgh, F. E.↗
NASA NTRS1981

Ultrasonic scanning of multilayer ceramic chip capacitors

Ultrasonic scanning is compared to neutron radiography and scanning laser acoustic microscopy (SLAM). Data show that SLAM and ultrasonic scanning evaluations are in good agreement. There is poor agreement between N-ray and both ultrasonic techniques because N-ray is insensitive to all but the grossest delaminations. Statistical analysis show a good correlation between ultrasonic scanning and destructive physical analysis.

Bradley, F. N.↗
NASA NTRS1981

Capacitor DPA: Does it do any good?

Methods of destructive physical analysis (DPA) are suggested which might have more usefulness if the procedures followed lines of accelerated testing. A brief presentation of DPA procedures is followed by a discussion of their value.

Porter, D. C.↗