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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 757 records · Page 42
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Effect of dopent on the structural and optical properties of ZnS thin film as a buffer layer in solar cell application

In order to find the suitable alternative of toxic CdS buffer layer, deposition of pure ZnS and doped with Al by chemical bath deposition method have been reported. Further as grown pure and doped thin films have been annealed at 150°C. The structural and surface morphological properties have been characterized by X-Ray diffraction (XRD) and Atomic Force Microscope (AFM).The XRD analysis shows that annealed thin film has been polycrystalline in nature with sphalerite cubic crystal structure and AFM images indicate increment in grain size as well as growth of crystals after annealing. Optical measurement data give band gap of 3.5 eV which is ideal band gap for buffer layer for solar cell suggesting that the obtained ZnS buffer layer is suitable in a low-cost solar cell.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Cd{sub 0.9375}Mn{sub 0.0625}S diluted magnetic semiconductor: A DFT study

We studied the spin polarized electronic band structures and magnetic properties of the diluted magnetic semiconductor Cd{sub 1-x}Mn{sub x}S in Zinc Blende phase (B3) with 0.0625 Mn by using ab initio method. The calculations were performed by using Density Functional Theory as implemented in the Spanish Initiative for Electronic Simulations with Thousands of Atoms code using local density approximation (LDA). Calculated electronic band structures and magnetic properties of Cd{sub 1-x}Mn{sub x}S are discussed in terms of contribution of Mn 3d{sup 5} 4s{sup 2}, Cd 4d{sup 10} 5s{sup 2}, S 3s{sup 2} 3p{sup 4} orbitals. The total magnetic moment is found to be 5.00 µb for Cd{sub 1−x}Mn{sub x}S at x=0.0625. This value indicate that Mn atom adds no hole carrier to the perfect CdS crystal. We found that Mn doped systems are ferromagnetic. Calculated results are in good agreement with previous studies.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Characterization of total ionizing dose damage in COTS pinned photodiode CMOS image sensors

The characterization of total ionizing dose (TID) damage in COTS pinned photodiode (PPD) CMOS image sensors (CISs) is investigated. The radiation experiments are carried out at a {sup 60}Co γ-ray source. The CISs are produced by 0.18-μm CMOS technology and the pixel architecture is 8T global shutter pixel with correlated double sampling (CDS) based on a 4T PPD front end. The parameters of CISs such as temporal domain, spatial domain, and spectral domain are measured at the CIS test system as the EMVA 1288 standard before and after irradiation. The dark current, random noise, dark signal non-uniformity (DSNU), photo response non-uniformity (PRNU), overall system gain, saturation output, dynamic range (DR), signal to noise ratio (SNR), quantum efficiency (QE), and responsivity versus the TID are reported. The behaviors of the tested CISs show remarkable degradations after radiation. The degradation mechanisms of CISs induced by TID damage are also analyzed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Synthesis and characterization of Mn doped ZnCdS core shell nanostructures QDs using a chemical precipitation route

With advancement in time, researchers has drawn great attention in the synthesis and characterization of mono dispersed alloyed nanocomposites of II-VI compounds. Ternary semiconductor alloyed ZnCdS quantum dots (QD’s) exhibit properties intermediate between those of ZnS and CdS. It shows high absorption coefficients, a composition tunable and size tunable band gap. Moreover, ZnCdS alloyed NC’s display unique composition dependent properties distinct from those of their bulk counterparts. The most striking feature of the alloyed NC’s nanocrystals is their unusual long time stability in emission wavelength. ZnCdS alloyed QD’s at room temperature has been synthesized using chemical precipitation method. Undoped and Mn{sup 2+} doped ZnCdS QDs have been synthesized and studied. UV-visible absorption spectrum shows absorbance in the visible region and photoluminescence (PL) emission spectra of the doped ZnCdS QD’s shows orange emission in comparison to weak blue emission from undoped QDs. The crystallite size is calculated from the XRD patterns. The experimental results indicate that this easy synthesis route would prove a versatile approach for the preparation of doped and undoped ZnCdS QD’s.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

ZnO/CdS bi-layer nanostructures photoelectrode for dye-sensitized solar cells

Simple chemical deposition method for the synthesis of ZnO/CdS bilayer photoelectrode on fluorine doped tin oxide (FTO) coated glass substrate in aqueous medium at low temperature (< 373K) is described. The different preparative parameters such as deposition time, bath temperature, concentration of precursor solution and, pH of the bath etc. were optimized. Nanograined ZnO was deposited on FTO coated glass substrates by dip-coating method, whereas CdS nanorods were successfully synthesized on pre-deposited ZnO film by Chemical Bath Deposition (CBD) method. The Photovoltaic properties of FTO/ZnO/CdS bilayer photo electrodes were also studied. A maximum short circuit current density of 9.1 mA cm-2 and conversion efficiency 1.05% are observed for ZnO/CdS-10min. Layer, which supports fast electron injection kinetics due to hetero structured nanorod, while minimum values of 0.53mA cm-2 and 0.01% respectively are observed for only ZnO deposited layer.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Point contacts at the copper-indium-gallium-selenide interface—A theoretical outlook

For a long time, it has been assumed that recombination in the space-charge region of copper-indium-gallium-selenide (CIGS) is dominant, at least in high efficiency solar cells with low band gap. The recent developments like potassium fluoride post deposition treatment and point-contact junction may call this into question. In this work, a theoretical outlook is made using three-dimensional simulations to investigate the effect of point-contact openings through a passivation layer on CIGS solar cell performance. A large set of solar cells is modeled under different scenarios for the charged defect levels and density, radius of the openings, interface quality, and conduction band offset. The positive surface charge created by the passivation layer induces band bending and this influences the contact (CdS) properties, making it beneficial for the open circuit voltage and efficiency, and the effect is even more pronounced when coverage area is more than 95%, and also makes a positive impact on the device performance, even in the presence of a spike at CIGS/CdS heterojunction.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Pinning down high-performance Cu-chalcogenides as thin-film solar cell absorbers: A successive screening approach

Photovoltaic performances of Cu-chalcogenides solar cells are strongly correlated with the absorber fundamental properties such as optimal bandgap, desired band alignment with window material, and high photon absorption ability. According to these criteria, we carry out a successive screening for 90 Cu-chalcogenides using efficient theoretical approaches. Besides the well-recognized CuInSe{sub 2} and Cu{sub 2}ZnSnSe{sub 4} materials, several novel candidates are identified to have optimal bandgaps of around 1.0–1.5 eV, spike-like band alignments with CdS window layer, sharp photon absorption edges, and high absorption coefficients. These new systems have great potential to be superior absorbers for photovolatic applications if their carrrier transport and defect properties are properly optimized.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Emitter/absorber interface of CdTe solar cells

The performance of CdTe solar cells can be very sensitive to the emitter/absorber interface, especially for high-efficiency cells with high bulk lifetime. Performance losses from acceptor-type interface defects can be significant when interface defect states are located near mid-gap energies. Numerical simulations show that the emitter/absorber band alignment, the emitter doping and thickness, and the defect properties of the interface (i.e., defect density, defect type, and defect energy) can all play significant roles in the interface recombination. In particular, a type I heterojunction with small conduction-band offset (0.1 eV ≤ ΔE{sub C} ≤ 0.3 eV) can help maintain good cell efficiency in spite of high interface defect density, much like with Cu(In,Ga)Se{sub 2} (CIGS) cells. The basic principle is that positive ΔE{sub C}, often referred to as a “spike,” creates an absorber inversion and hence a large hole barrier adjacent to the interface. As a result, the electron-hole recombination is suppressed due to an insufficient hole supply at the interface. A large spike (ΔE{sub C} ≥ 0.4 eV), however, can impede electron transport and lead to a reduction of photocurrent and fill-factor. In contrast to the spike, a “cliff” (ΔE{sub C} < 0 eV) allows high hole concentration in the vicinity of the interface, which will assist interface recombination and result in a reduced open-circuit voltage. Another way to mitigate performance losses due to interface defects is to use a thin and highly doped emitter, which can invert the absorber and form a large hole barrier at the interface. CdS is the most common emitter material used in CdTe solar cells, but the CdS/CdTe interface is in the cliff category and is not favorable from the band-offset perspective. The ΔE{sub C} of other n-type emitter choices, such as (Mg,Zn)O, Cd(S,O), or (Cd,Mg)Te, can be tuned by varying the elemental ratio for an optimal positive value of ΔE{sub C}. These materials are predicted to yield higher voltages and would therefore be better candidates for the CdTe-cell emitter.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Using quantum dot photoluminescence for load detection

We propose a novel concept for an integrable and flexible sensor capable to visualize mechanical impacts on lightweight structures by quenching the photoluminescence (PL) of CdSe quantum dots. Considering the requirements such as visibility, storage time and high optical contrast of PL quenching with low power consumption, we have investigated a symmetrical and an asymmetrical layer stack consisting of semiconductor organic N,N,N′,N′-Tetrakis(3-methylphenyl)-3,3′-dimethylbenzidine (HMTPD) and CdSe quantum dots with elongated CdS shell. Time-resolved series of PL spectra from layer stacks with applied voltages of different polarity and simultaneous observation of power consumption have shown that a variety of mechanisms such as photo-induced charge separation and charge injection, cause PL quenching. However, mechanisms such as screening of external field as well as Auger-assisted charge ejection is working contrary to that. Investigations regarding the influence of illumination revealed that the positive biased asymmetrical layer stack is the preferred sensor configuration, due to a charge carrier injection at voltages of 10 V without the need of coincident illumination.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Probing the CZTS/CdS heterojunction utilizing photoelectrochemistry and x-ray absorption spectroscopy

The importance of renewable resources is becoming more and more influential on research due to the depletion of fossil fuels. Cost-effective ways of harvesting solar energy should also be at the forefront of these investigations. Cu 2 ZnSnS 4 (CZTS) solar cells are well within the frame of these goals, and a thorough understanding of how they are made and processed synthetically is crucial. The CZTS/CdS heterojunction was examined using photoelectrochemistry and synchrotron radiation (SR) spectroscopy. These tools provided physical insights into this interface that was formed by the electrophoretic deposition of CZTS nanocrystals and chemical bath deposition (CBD) of CdS for the respective films. It was discovered that CBD induced a change in the local and long range environment of the Zn in the CZTS lattice, which was detrimental to the photoresponse. X-ray absorption near-edge structures and extended X-ray absorption fine structures (EXAFSs) of the junction showed that this change was at an atomic level and was associated with the coordination of oxygen to zinc. This was confirmed through FEFF fitting of the EXAFS and through IR spectroscopy. It was found that this change in both photoresponse and the Zn coordination can be reversed with the use of low temperature annealing. Investigating CZTS through SR techniques provides detailed structural information of minor changes from the zinc perspective.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

A low cost and large-scale synthesis of 3D photonic crystal with SP2 lattice symmetry

In this work, a novel lithographic method is proposed to prepare three-dimensional (3D) photonic crystal (PC) that is different from conventional top-down and bottom-up approaches. The method combines a 2D optical mask and off-the-axis double optical exposures to create a desirable 3D PC structure. Since the method uses only two optical exposures of a photo-resist layer, it is inherently a low-cost, high throughput and wafer-scale lithographic method. The method is implemented to make a slanted post 3D PC having the SP2 lattice symmetry. Three types of SP2 3D PC structures were successfully fabricated with a minimum feature size of d=1.5 μm over a large scale of 8x10 mm 2 , without any observable fabrication defects. The SP2 PCs are: (i) SU8 posts in air background, (ii) air pores in CdS background and (iii) Pt coated on SU8 SP2 templates. A spectroscopic study of the SP2 PCs shows select spectral regions of high reflectance, indicating the existence of a photonic stop band. This low-cost and large-scale method could enable broader technological impacts of 3D PC materials in areas such as thermo-photovoltaics and above room-temperature Bose-Einstein Condensation. Furthermore, this off-axis method could lead to the creation of an entirely new class of slanted-rod based photonic crystals, such as topological photonic crystal in 3D.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Size dependence of photocatalytic hydrogen generation for CdTe quantum dots

CdTe quantum dots (QDs) are attractive photosensitizers for photocatalytic proton reduction due to their broad absorbance profile that can extend from the ultraviolet to near-infrared regions, providing access to a larger portion of the solar spectrum than possible with analogous CdSe and CdS QD photosensitizers. Here, the photocatalytic hydrogen (H 2 ) generation from various sizes of dihydrolipoic acid (DHLA)-capped CdTe QDs, ranging from 2.5 to 7.5 nm in diameter, and a molecular Ni-DHLA catalyst in aqueous solutions was evaluated, and an unusual size-dependent photocatalytic activity with CdTe QDs was observed. Under optimized conditions, using 3.4 nm CdTe-DHLA and a 1:20 ratio of QD/Ni-DHLA catalyst, as many as 38 000 turnover numbers (mol H 2 per mol QD) were achieved. However, below this critical size, the H 2 production efficiency decreased; this behavior is attributed to the rapid oxidation of the QD surface, resulting in detrimental surface trap states. These results are consistent with ultrafast transient absorption spectroscopic measurements, which suggest the presence of extremely fast charge-trapping processes in the oxidized CdTe-DHLA QDs. While fast electron transfer from CdTe-DHLA QDs is observed in the presence of the Ni-DHLA catalyst, the charge trapping processes occur on a competitive time scale, thus lowering the efficiency of the CdTe/Ni-DHLA H 2 production system. Understanding rapid charge trapping in CdTe QDs may help suggest potential improvements for the overall CdTe photocatalytic system.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Impact of UV-induced ozone and low-energy Ar + -ion cleaning on the chemical structure of Cu(In,Ga)(S,Se) 2 absorber surfaces

Dry buffer layer deposition techniques for chalcopyrite (CIGSSe)-based thin-film solar cells lack the surface-cleaning characteristics of the commonly used CdS or Zn(O,S) wet-chemical bath deposition. Here, a UV-induced ozone and/or a low-energy Ar + -ion treatment could provide dry CIGSSe surface cleaning steps. To study the impact of these treatments, the chemical surface structure of a CIGSSe absorber is investigated. For this purpose, a set of surface-sensitive spectroscopic methods, i.e., laboratory-based x-ray photoelectron spectroscopy and x-ray-excited Auger electron spectroscopy, is combined with synchrotron-based soft x-ray emission spectroscopy. After treatment times as short as 15 s, the UV-induced ozone treatment decreases the amount of carbon adsorbates at the CIGSSe surface significantly, while the oxygen content increases. This is accompanied by the oxidation of all absorber surface elements, i.e., indium, selenium, sulfur, and copper. Short (60 s) low-energy Ar + -ion treatments, in contrast, primarily remove oxygen from the surface. Longer treatment times also lead to a removal of carbon, while extremely long treatment times can also lead to additional (likely metallic) Cu phases at the absorber surface as well.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

A compact x-ray diffraction system for dynamic compression experiments on pulsed-power generators

Pulsed-power generators can produce well-controlled continuous ramp compression of condensed matter for high-pressure equation-of-state studies using the magnetic loading technique. X-ray diffraction (XRD) data from dynamically compressed samples provide direct measurements of the elastic compression of the crystal lattice, onset of plastic flow, strength–strain rate dependence, structural phase transitions, and density of crystal defects, such as dislocations. Here, we present a cost-effective, compact, pulsed x-ray source for XRD measurements on pulsed-power-driven ramp-loaded samples. This combination of magnetically driven ramp compression of materials with a single, short-pulse XRD diagnostic will be a powerful capability for the dynamic materials’ community to investigate in situ dynamic phase transitions critical to equation of states. Finally, we present results using this new diagnostic to evaluate lattice compression in Zr and Al and to capture signatures of phase transitions in CdS.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

Robust estimation of charge carrier diffusivity using transient photoluminescence microscopy

Transient microscopy has emerged as a powerful tool for imaging the diffusion of excitons and free charge carriers in optoelectronic materials. In many excitonic materials, extraction of diffusion coefficients can be simplified because of the linear relationship between signal intensity and local excited state population. However, in materials where transport is dominated by free charge carriers, extracting diffusivities accurately from multidimensional data is complicated by the nonlinear dependence of the measured signal on the local charge carrier density. To obtain accurate estimates of charge carrier diffusivity from transient microscopy data, statistically robust fitting algorithms coupled to efficient 3D numerical solvers that faithfully relate local carrier dynamics to raw experimental measurables are sometimes needed. Here, we provide a detailed numerical framework for modeling the spatiotemporal dynamics of free charge carriers in bulk semiconductors with significant solving speed reduction and for simulating the corresponding transient photoluminescence microscopy data. To demonstrate the utility of this approach, we apply a fitting algorithm using a Markov chain Monte Carlo sampler to experimental data on bulk CdS and methylammonium lead bromide (MAPbBr 3 ) crystals. Parameter analyses reveal that transient photoluminescence microscopy can be used to obtain robust estimates of charge carrier diffusivities in optoelectronic materials of interest, but that other experimental approaches should be used for obtaining carrier recombination constants. Additionally, simplifications can be made to the fitting model depending on the experimental conditions and material systems studied. Our open-source simulation code and fitting algorithm are made freely available to the scientific community.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

An optoelectronic heterostructure for neuromorphic computing: CdS/V 3 O 5

Nonvolatile resistive switching is one of the key phenomena for emerging applications in optoelectronics and neuromorphic computing. In most of the cases, an electric field is applied to a two terminal dielectric material device and leads to the formation of a low resistance filament due to ion migration. However, the stochastic nature of the ion migration can be an impediment for the device robustness and controllability, with uncontrolled variations of high and low resistance states or threshold voltages. Here, we report an optically induced resistive switching based on a CdS/V 3 O 5 heterostructure which can overcome this issue. V 3 O 5 is known to have a second order insulator to metal transition around T c ≈ 415 K, with an electrically induced threshold switching at room temperature. Upon illumination, the direct transfer of the photoinduced carriers from the CdS into V 3 O 5 produces a nonvolatile resistive switching at room temperature. The initial high resistance can be recovered by reaching the high temperature metallic phase, i.e., temperatures above T c . Interestingly, this resistive switching becomes volatile around the T c . In conclusion, by locally manipulating the volatile and nonvolatile resistive switching using electric field and light, this system is a promising platform for hardware based neuromorphic computing implementations.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2013

Supercontinuum generation and filamentation of ultrashort laser pulses in hybrid silicate nanocomposite materials on the basis of polysaccharides and hyperbranched polyglycidols

The possibility of using hybrid silicate nanocomposite materials on the basis of polysaccharides and hyperbranched polyglycidols for efficient conversion of pulsed radiation of a femtosecond Ti : sapphire laser at the wavelength 800 nm into supercontinuum in the range from 400 to 1000 nm is experimentally demonstrated. It is established that the addition of a small concentration of Au and CdS nanoparticles to the studied materials essentially affects the efficiency of conversion of the laser radiation energy into the supercontinuum spectrum. (extreme light fields and their applications)

36 MATERIALS SCIENCE↗
DOE OSTI2014

Threshold energies for filamentation and spectral characteristics of supercontinuum generation in THEOS-based nanocomposite organosilicon media

We have experimentally determined the threshold energy for filamentation in THEOS-based hybrid silicate nanocomposite materials containing polysaccharides and hyperbranched polyglycidols and the conversion efficiency from the 800-nm femtosecond Ti : sapphire laser output to a supercontinuum in the range 420 – 700 nm. The addition of sodium hyaluronate (polysaccharide) and low concentrations of Au nanoparticles or CdS quantum dots with an average diameter of 3 – 5 nm has been shown to considerably reduce the threshold energy for filamentation and improve the laser output to supercontinuum conversion efficiency. (extreme light fields and their applications)

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗