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At least 757 records · Page 42

HIGH-TEMPERATURE SAFETY TESTING OF IRRADIATED AGR-1 TRISO FUEL

High-Temperature Safety Testing of Irradiated AGR-1 TRISO Fuel John D. Stempien, Paul A. Demkowicz, Edward L. Reber, and Cad L. Christensen Idaho National Laboratory, P.O. Box 1625 Idaho Falls, ID 83415, USA Corresponding Author: john.stempien@inl.gov, +1-208-526-8410 Two new safety tests of irradiated tristructural isotropic (TRISO) coated particle fuel have been completed in the Fuel Accident Condition Simulator (FACS) furnace at the Idaho National Laboratory (INL). In the first test, three fuel compacts from the first Advanced Gas Reactor irradiation experiment (AGR-1) were simultaneously heated in the FACS furnace. Prior to safety testing, each compact was irradiated in the Advanced Test Reactor to a burnup of approximately 15 % fissions per initial metal atom (FIMA), a fast fluence of 3×1025 n/m2 (E > 0.18 MeV), and a time-average volume-average (TAVA) irradiation temperature of about 1020 °C. In order to simulate a core-conduction cool-down event, a temperature-versus-time profile having a peak temperature of 1700 °C was programmed into the FACS furnace controllers. Gaseous fission products (i.e., Kr-85) were carried to the Fission Gas Monitoring System (FGMS) by a helium sweep gas and captured in cold traps featuring online gamma counting. By the end of the test, a total of 3.9% of an average particle’s inventory of Kr-85 was detected in the FGMS traps. Such a low Kr-85 activity indicates that no TRISO failures (failure of all three TRISO layers) occurred during the test. If released from the compacts, condensable fission products (e.g., Ag-110m, Cs-134, Cs-137, Eu-154, Eu-155, and Sr-90) were collected on condensation plates fitted to the end of the cold finger in the FACS furnace. These condensation plates were then analyzed for fission products. In the second test, five loose UCO fuel kernels, obtained from deconsolidated particles from an irradiated AGR-1 compact, were heated in the FACS furnace to a peak temperature of 1600 °C. This test had two primary goals. First, the test was intended to assess the retention of fission products in loose kernels without the effects of the other TRISO layers (buffer, IPyC, SiC, and OPyC) or the graphitic matrix material comprising the compact. Second, this test served as an evaluation of the FACS fission product condensation plate collection efficiency.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Thallium bromide (TIBr) semiconductors and devices with extended life apparatus, methods, and system

Various technologies pertaining to formation or treatment of a thallium bromide crystal to improve the operable lifespan of a device that incorporates the thallium bromide crystal are described herein. In exemplary embodiments, treatments including focused ion beam implantation, selective material removal, and buffer layer application are performed on a thallium bromide crystal to inhibit motion of dislocations toward a region at which an electrical contact is desirably installed. In other exemplary embodiments, a thallium bromide crystal is doped with impurities during formation that inhibit the motion of dislocations in the crystal. In still other exemplary embodiments, a thallium bromide crystal is formed by way of processes that inhibit dislocation formation during crystal growth or eliminate dislocations in an existing thallium bromide mass.

36 MATERIALS SCIENCE↗

Reel-to-reel exfoliation and processing of second generation superconductors

The substrate and buffer layers, of either one-sided or two-sided superconducting tape, are separated from the YCBO layer(s) of the tape by a combined action of radiative or inductive heat and mechanical force via a reel-to-reel manufacturing process. The exfoliation process may also utilize an air blade(s) to facilitate the separation of the layers of the tape.

Solovyov, Vyacheslav↗

Microstructural and Micro-Chemical Evolutions in the Irradiated UCO Fuel Kernels of AGR-1 and AGR-2 TRISO Fuel Particles

AGR-1 and AGR-2 TRISO fuel particles were fabricated with slightly different fuel kernel chemical compositions, modified fabrication processes, different fuel kernel diameters, and changed 235U enrichments. To correlate those differences with the fuel kernel responses to neutron irradiations in terms of irradiated fuel microstructure, fission products chemical and physical states, and fission gas bubble evolutions, extensive microstructural and analytical characterizations were conducted. The studies used a state of art transmission electron microscopy (TEM) equipped with Energy-dispersive X-ray spectroscopy (EDS) of four silicon solid-state detectors which have super sensitivity and fast speed. The TEM specimens were prepared from selected AGR-1 and AGR-2 irradiated fuel kernels exposed to safety testing after irradiation. The particles were chosen to represent a representative irradiation conditions with a fuel burnup within the range from 10.8 to 18.6% FIMA, and the time-average volume-average temperatures vary from 1070 to 1287°C. The 235U enrichment was 19.74 wt.% for the AGR1 fuel kernels and 14.03 wt.% for the AGR-2 fuel kernels. The TEM results show that there were significant microstructural reconstructions in the irradiated fuel kernels for both the AGR-1 and AGR-2 fuels. There are four major phases including fuel matrix of UO2 and UC, U2RuC2, and UMoC2 in the irradiated AGR2 fuel kernel. Zr and Nb form solid solution in the UC phase. UMoC2 phase often shows a detectable concentration of Tc. Pd was found to mainly locate in the buffer layer or to be associated with fission gas bubble within the UMoC2 phase. The EDS maps qualitatively show that the rare-earth fission products (Nb, et al.) preferentially reside in the UO2 phase. In contrast, in the irradiated AGR1 fuel kernel, no U2RuC2 or UMoC2 precipitates were positively identified. Instead, there is a high number of rod-shape precipitates enriched with Ru, Tc, Rh, and Pd observed in the fuel kernel center and edge zone. The difference of microstructural and micro-chemical evolutions in irradiated fuel kernels between the AGR-1 and AGR-2 TRISO fuel particle may result from a combined factor of irradiation temperature, fuel geometry and chemical composition. However, the irradiation temperature probably play a more deterministic role. Limited electron energy loss spectroscopy (EELS) characterizations on the AGR2 fuel kernel show that there is nearly no carbon in the UO2 phase while a small fraction of oxygen was detected in the UC/UMoC2 phase.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Semi-analytical prediction of hydraulic resistance and heat transfer for pipe and channel flows of water at supercritical pressure

Within the Generation IV International Forum the Supercritical Water Reactor is investigated. For its core design and safety analysis the efficient prediction of flow and heat transfer parameters such as the wall-shear stress and the heat-transfer coefficient for pipe and channel flows is needed. For circular pipe flows a numerical model based on the one-dimensional conservation equations of mass, momentum end energy in the radial direction is presented, referred to as a 'semi-analytical' method. An accurate, high-order numerical method is employed to evaluate previously derived analytical solutions of the governing equations. Flow turbulence is modeled using the algebraic approach of Prandtl/van-Karman, including a model for the buffer layer. The influence of wall roughness is taken into account by a new modified numerical damping function of the turbulence model. The thermo-hydraulic properties of water are implemented according to the international standard of 1997. This method has the potential to be used within a sub-channel analysis code and as wall-functions for CFD codes to predict the wall shear stress and the wall temperature. The present study presents a validation of the method with comparison of model results with experiments and multi-dimensional computational (CFD) studies in a wide range of flow parameters. The focus is laid on forced convection flows related to reactor design and near-design conditions. It is found, that the method can accurately predict the wall temperature even under deterioration conditions as they occur in the selected experiments (Yamagata el al. 1972 at 24.5 MPa, Ornatski et al. 1971 at 25.5 and Swenson et al. 1963 at 22.75 MPa). Comparison of the friction coefficient under high heat flux conditions including significant viscosity and density reductions near the wall with various correlations for the hydraulic resistance will be presented; the best agreement is achieve with the correlation of Pioro et al. 2004. It is concluded, that the semi-analytical prediction method is accurate and efficient for forced convection flows even at high heat fluxes. The wall-roughness height is identified as an important model parameter. (authors)

21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS↗

Nanocomposite-seeded epitaxial growth of single-domain lithium niobate thin films for surface acoustic wave devices

A method for making LNO film, including the steps of identifying a substrate, identifying a deposition target, placing the substrate and deposition target in a deposition environment, evolving target material into the deposition environment, and depositing evolved target material onto the substrate to yield an LNO film. The deposition environment defines a temperature of between 500 degrees Celsius and 750 degrees Celsius and a pressure of about 10 −6 Torr. A seed or buffer layer may be first deposited onto the substrate, wherein the seed layer is about 30 mole percent gold and about 70 LiNbO 3 .

Wang, Haiyan↗

Production of LEU fully ceramic microencapsulated fuel for irradiation testing

The Advanced Fuels Campaign of the US DOE Fuel Cycle Research/Development program is currently engaged in production of FCM fuel for irradiation testing in the Advanced Test Reactor (ATR) at Idaho National Laboratory (INL). FCM fuel production is a serial process with 3 major steps namely kernel, TRISO, and compact production. The first step in the kernel process is production of air-dried UO{sub 3} gel spheres with suspended carbon particles. These spheres, roughly 2 mm in size, are then calcined to produce a mixture of UO{sub 2} and carbon. This calcination step may be performed in either argon, hydrogen, or mixtures of these gases. Once the calcination step is complete, temperature is increased (>1400 Celsius degrees) to convert this mixture to UO{sub 2} + UC{sub x}. Once dense oxide-carbide kernels are available, the inert environment is switched to a nitrogen containing one to facilitate carbothermic reduction of kernels and production of UN. Essentially, the oxygen and carbon in the oxide-carbide kernels react with one another to produce CO and are replaced with nitrogen inside the lattice. The TRISO step in fuel production is incorporation of a porous carbon buffer layer, a dense inner pyrolytic carbon layer (IPyC), a SiC layer, and finally and outer pyrolytic carbon layer (OPyC) onto the UN kernels. The coating layer deposition step is carried out inside a graphite furnace using a fluidized bed chemical vapor deposition (CVD) process. In essence, a mixture of reactant and inert gasses flow from the bottom through a bed of particles that are in turn fluidized by the gas stream. The particles undergo CVD and once a different coating layer is to be incorporated, the furnace temperature is adjusted and the reactant gases are changed. The final step in the series of fuel production activities is the consolidation of UN TRISO particles inside the SiC matrix to produce cylindrical pellets. It entails 3 critical areas: SiC powder mixing, over-coating of particles, and high-temperature densification. Optimal execution of the powder mixing step is vital to achieve a fully dense SiC matrix at the end of the process. The SiC matrix is consolidated using a special form of liquid phase sintering (LPS) involving nano-powder feedstock that is designated as the NITE process. The SiC nano-powder slurry is sprayed directly onto the particle surface using a piezoelectric nozzle. Once the over-coated particles are available, final consolidation step at high temperatures (1875 Celsius degrees) is carried out.

36 MATERIALS SCIENCE↗

Thermo mechanical analysis of fully ceramic microencapsulated fuel during in-pile operation

A proposed fuel for improved performance in LWRs (Light Water Reactors) is FCM (fully encapsulated micro-ceramic) fuel concept that involves TRISO (Tri-structural-Isotropic) fuel particles embedded in a NITE (Nano Infiltrated Eutectic) silicon carbide matrix. TRISO fuel particles contain a spherical fuel kernel that will likely range from about 500 to in excess of 800 μm in diameter. The kernel and buffer layer are then typically coated with 3 isotropic layers consisting of a dense inner pyrolytic carbon (IPyC), a silicon carbide (SiC) layer, and an outer layer of dense, pyrolytic carbon (OPyC). These layers are typically around 40 μm thick, but can range from 20 to 60 μm. The TRISO particle packing fraction in the NITE-SiC matrix is expected to be 40-45 vol.%. The release of radioactivity into the coolant is dependent on the integrity of the silicon carbide layer of the TRISO particles and the NITE-SiC matrix. BISON, a code under development by Idaho National Laboratory, has been built on the Multi-physics Object Oriented Simulation Environment (MOOSE). MOOSE is a massively parallel, finite element computational system that uses a Jacobian-free, Newton-Krylov (JFNK) method to solve coupled systems and non-linear partial differential equations. A single particle comparison to fuel performance codes such as PARFUME was conducted and demonstrated that BISON is able to simulate the required physics. FCM pellets embedded with homogenous particles were simulated. It was found that the interior matrix temperature was predicted to be considerably lower than for an equivalent UO{sub 2} pellet. The swelling dependence on temperature created a compressive region around the perimeter of the pellet. However, at fluences above 6.10{sup 25} neutrons/m{sup 2}, the swelling of the pyrolytic carbon might cause significant tensile stresses and possible cracks near the surface of the pellet. This suggests that the pyrolytic carbon swelling may be an important factor in the lifetime of this fuel type.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Post-irradiation 1600°C Heating Test of AGR-1 UCO Fuel Kernels

Five bare kernels were selected from the U.S. Advanced Gas Reactor (AGR) 1 irradiation experiment Compact 5-3-1 to perform post-irradiation safety tests. The safety test involved heating the kernels in the Fuel Accident Condition Simulator (FACS) furnace in the inert atmosphere to a peak temperature of 1600°C and isothermally holding at this temperature for about 47 hours while collecting fission products released. This test was to assess the retention of fission products in bare kernels without the effects of the other TRISO layers (buffer, IPyC, SiC, and OPyC) or the graphitic matrix material. The bare kernels released nearly 100% of cesium and antimony, while they were able to maintain about 30% of europium, 50% of strontium, and the majority of cerium and ruthenium. In addition, about 48% of the calculated inventory of Kr-85 released during the test, indicating that kernels were capable of retaining a considerable fraction of fission gas K-85 during irradiation.

11 - NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Experimental validation of the mechanistic scale-up methodology of gas–solid spouted beds using radioactive particle tracking (RPT)

The very high-temperature reactors (VHTRs) are highly ranked among candidates of Generation IV of nuclear reactors due to their high efficiency, safety, the resistance to proliferation, and reliability. The VHTRs are preferentially fueled by Tristructural-isometric (TRISO) coated fuel particles which has fuel kernels of fissile material coated by four coating layers: a porous buffer pyrolysis carbon layer (buffer PyC), an inner dense pyrolysis carbon layer (IPyC), a silicon carbide layer (SiC) and an outer dense pyrolysis carbon layer (OPyC). The heart of the operation and safety of the VHTRs significantly depends on the reliability of the coating layers of TRISO particles to retain metallic and gaseous fission products within the particles. The technique used for coating TRISO particles are gas-solids spouted beds via chemical vapor deposition (CVD). Fabrication of high-quality low-defect TRISO fuel particles fuel at larger scale spouted beds is required to support the commercialization of the VHTRs. In this work, our new developed mechanistic scale-up methodology of gas-solids spouted beds based on matching the radial profile of gas-holdup has been demonstrated and validated using radioactive particle tracking (RPT). Two spouted beds of small and larger scales were used in the study. Three sets of conditions were carried out which include the conditions of the reference case in the large scale, conditions that provide similar gas holdup radial profile to that of the reference case and conditions that provided dissimilar gas holdup radial in the small-scale spouted beds. The results confirm the validation of the scale-up methodology in terms of the dimensionless values of the spout diameter, cumulative probability distribution of the solids particles penetration into the spout, fraction of cycle time in each region of the bed, the radial profiles of the dimensionless values of the root-mean-square particle velocities and solids eddy diffusivity. Finally, the results further advance the knowledge and understanding of the gas-solids spouted beds provide deeper insight into their solids dynamics and presenting important benchmarking data for validating computational fluid dynamics codes and models. At last, procedures are established for the implementation of the new scale-up methodology.

21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS↗

Studies of molecular-beam epitaxy growth of GaAs on porous Si substrates

GaAs has been grown on porous Si directly and on Si buffer layer-porous Si substrates by molecular-beam epitaxy. In the case of GaAs growth on porous Si, transmission electron microscopy (TEM) reveals that the dominant defects in GaAs layers grown on porous Si are microtwins and stacking faults, which originate from the GaAs/porous Si interface. GaAs is found to penetrate into the porous Si layers. By using a thin Si buffer layer (50 nm), GaAs penetration diminishes and the density of microtwins and stacking faults is largely reduced and localized at the GaAs/Si buffer interface. However, there is a high density of threading dislocations remaining. Both Si (100) aligned and four degree tilted substrates have been examined in this study. TEM results show no observable effect of the tilted substrates on the quality of the GaAs epitaxial layer.

Mii, Y. J.↗

Epitaxial strontium titanate films grown by atomic layer deposition on SrTiO{sub 3}-buffered Si(001) substrates

Epitaxial strontium titanate (STO) films have been grown by atomic layer deposition (ALD) on Si(001) substrates with a thin STO buffer layer grown by molecular beam epitaxy (MBE). Four unit cells of STO grown by MBE serve as the surface template for ALD growth. The STO films grown by ALD are crystalline as-deposited with minimal, if any, amorphous SiO{sub x} layer at the STO-Si interface. The growth of STO was achieved using bis(triisopropylcyclopentadienyl)-strontium, titanium tetraisopropoxide, and water as the coreactants at a substrate temperature of 250 Degree-Sign C. In situ x-ray photoelectron spectroscopy (XPS) analysis revealed that the ALD process did not induce additional Si-O bonding at the STO-Si interface. Postdeposition XPS analysis also revealed sporadic carbon incorporation in the as-deposited films. However, annealing at a temperature of 250 Degree-Sign C for 30 min in moderate to high vacuum (10{sup -6}-10{sup -9} Torr) removed the carbon species. Higher annealing temperatures (>275 Degree-Sign C) gave rise to a small increase in Si-O bonding, as indicated by XPS, but no reduced Ti species were observed. X-ray diffraction revealed that the as-deposited STO films were c-axis oriented and fully crystalline. A rocking curve around the STO(002) reflection gave a full width at half maximum of 0.30 Degree-Sign {+-} 0.06 Degree-Sign for film thicknesses ranging from 5 to 25 nm. Cross-sectional transmission electron microscopy revealed that the STO films were continuous with conformal growth to the substrate and smooth interfaces between the ALD- and MBE-grown STO. Overall, the results indicate that thick, crystalline STO can be grown on Si(001) substrates by ALD with minimal formation of an amorphous SiO{sub x} layer using a four-unit-cell STO buffer layer grown by MBE to serve as the surface template.

36 MATERIALS SCIENCE↗

Schottky barrier detection devices having a 4H-SiC n-type epitaxial layer

A detection device, along with methods of its manufacture and use, is provided. The detection device can include: a SiC substrate defining a substrate surface cut from planar to about 12.degree.; a buffer epitaxial layer on the substrate surface; a n-type epitaxial layer on the buffer epitaxial layer; and a top contact on the n-type epitaxial layer. The buffer epitaxial layer can include a n-type 4H--SiC epitaxial layer doped at a concentration of about 1.times.10.sup.15 cm.sup.-3 to about 5.times.10.sup.18 cm.sup.-3 with nitrogen, boron, aluminum, or a mixture thereof. The n-type epitaxial layer can include a n-type 4H--SiC epitaxial layer doped at a concentration of about 1.times.10.sup.13 cm.sup.-3 to about 5.times.10.sup.15 cm.sup.-3 with nitrogen. The top contact can have a thickness of about 8 nm to about 15 nm.

25 ENERGY STORAGE↗

Electron microscopy of GaAs Structures with InAs and as quantum dots

An electron-microscopy study of GaAs structures, grown by molecular-beam epitaxy, containing two coupled layers of InAs semiconductor quantum dots (QDs) overgrown with a thin buffer GaAs layer and a layer of low-temperature-grown gallium arsenide has been performed. In subsequent annealing, an array of As nanoinclusions (metallic QDs) was formed in the low-temperature-grown GaAs layer. The variation in the microstructure of the samples during temperature and annealing conditions was examined. It was found that, at comparatively low annealing temperatures (400-500 Degree-Sign C), the formation of the As metallic QDs array weakly depends on whether InAs semiconductor QDs are present in the preceding layers or not. In this case, the As metallic QDs have a characteristic size of about 2-3 nm upon annealing at 400 Degree-Sign C and 4-5 nm upon annealing at 500 Degree-Sign C for 15 min. Annealing at 600 Degree-Sign C for 15 min in the growth setup leads to a coarsening of the As metallic QDs to 8-9 nm and to the formation of groups of such QDs in the area of the low-temperature-grown GaAs which is directly adjacent to the buffer layer separating the InAs semiconductor QDs. A more prolonged annealing at an elevated temperature (760 Degree-Sign C) in an atmosphere of hydrogen causes a further increase in the As metallic QDs' size to 20-25 nm and their spatial displacement into the region between the coupled InAs semiconductor QDs.

36 MATERIALS SCIENCE↗

Study of a MHEMT heterostructure with an In{sub 0.4}Ga{sub 0.6}As channel MBE-grown on a GaAs substrate using reciprocal space mapping

The crystallographic characteristics of the design elements of a metamorphic high-electron-mobility (MHEMT) heterostructure with an In{sub 0.4}Ga{sub 0.6}As channel are determined based on reciprocal space mapping. The heterostructure is grown by molecular beam epitaxy on the vicinal surface of a GaAs substrate with a deviation angle from the (001) plane of 2° and consists of a stepped metamorphic buffer containing six layers including an inverse step, a high-temperature buffer layer with constant composition, and active HEMT layers. The InAs content in the layers of the metamorphic buffer is varied from 0.1 to 0.48. Reciprocal space maps are constructed for the (004) symmetric reflection and (224)+ asymmetric reflection. It is found that the heterostructure layers are characterized both by a tilt angle relative to the plane of the (001) substrate and a rotation angle around the [001] axis. The tilt angle of the layer increases as the InAs concentration in the layer increases. It is shown that a high-temperature buffer layer of constant composition has the largest degree of relaxation compared with all other layers of the heterostructure.

36 MATERIALS SCIENCE↗

Systems and methods for organic semiconductor devices with sputtered contact layers

Systems and methods for organic semiconductor devices with sputtered contact layers are provided. In one embodiment, an organic semiconductor device comprises: a first contact layer (140) comprising a first sputter-deposited transparent conducting oxide; an electron transport layer (130) interfacing with the first contact layer; a second contact layer (110) comprising a second sputter-deposited transparent conducting oxide; a hole transport layer interfacing with the second contact layer; and an organic semiconductor active layer (120) having a first side facing the electron transport layer and an opposing second side facing the hole transport layer; wherein either the electron transport layer or the hole transport layer comprises a buffering transport layer.

Hammond, Scott R.↗