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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Monolithic three-stage 32-GHz power amplifier compact and offers state-of-the-art performance. Operates at frequencies around 32 GHz. Designed for use aboard communication satellite and is also suitable for terrestrial applications in which moderate power and high efficiency needed.
A discrete peeled high electron mobility transistor (HEMT) device was integrated into a 10 GHz amplifier. The discrete HEMT device interconnects were made using photo patterned metal, stepping from the 10 mil alumina host substrate onto the 1.3 microns thick peeled GaAs HEMT layer, eliminating the need for bond wires and creating a fully integrated circuit. Testing of devices indicate that the peeled device is not degraded by the peel off step but rather there is an improvement in the quantum well carrier confinement. Circuit testing resulted in a maximum gain of 8.5 dB and a return loss minimum of -12 dB.
The radical amplifier as a method for measuring radical concentrations in the atmosphere has received renewed attention lately. In principle, it can measure the total concentration of HO(x) and RO(x) radicals by reacting ambient air with high concentrations of CO (3-10 percent) and NO (2-6 ppmv), and measuring the NO2 produced.
A 1.5-W solid-state power amplifier (SSPA) has been demonstrated as part of an effort to develop and evaluate state-of-the-art transmitter and receiver components at 32 and 35 GHz for future deep space missions. Output power and efficiency measurements for a monolithic millimeter-wave integrated circuit (MMIC)-based SSPA are reported. Technical design details for the various modules and a thermal analysis are discussed, as well as future plans.
Report describes design and low-temperature tests of low-noise GaAs microwave amplifier combined with microstrip band-pass filter. Two versions of microstrip filter used in alternate tests; in one version, microstrips formed as films of high-transition-temperature superconductor Y/Ba/Cu/O on lanthanum aluminate substrate with gold film as ground plane. Other version identical except microstrips as well as ground plane made of gold, normally conductive.
The goal was to develop cryogenic high-electron-mobility transistor (HEMT) based radiometers and use them to measure the anisotropy in the cosmic microwave background (CMB). In particular, a novel Fourier transform spectrometer (FTS) built entirely of waveguide components would be developed. A dual-polarization Ka-band HEMT radiometer and a similar Q-band radiometer were built. In a series of measurements spanning three years made from a ground-based site in Saskatoon, SK, the amplitude, frequency spectrum, and spatial frequency spectrum of the anisotropy were measured. A prototype Ka-band FTS was built and tested, and a simplified version is proposed for the MAP satellite mission. The 1/f characteristics of HEMT amplifiers were quantified using correlation techniques.
Improved buffer amplifier offers high input impedance to signal source. Input impedance remains high, relatively constant, and essentially resistive over wide range of frequencies.
In personal satellite communications, satellite antenna beam becomes narrow, and number of beams will be thirty to more than one hundred. This paper shows that Multi Port Amplifier is most suitable to multiple beam transmitter for personal communications satellite. It was shown that the single beam coverage area(cell) diameter is determined by personal earth station(PES) eirp, uplink C/No and uplink frequency band. Required number of cells for European or North American regional coverage at FPLMTS uplink frequency band is shown as around 32. It was shown that 32 beams systems will be easily implemented by using 2 set of 16-port MPA. Redundancy to SSPA failure is considered by increasing number of SSPAs. Actual configuration for 16-port MPA are briefly shown. The presented configuration will be easy to implement and the most economical solution.
Thermally induced phase mismatch and thermally induced lensing will limit the average power available from a parametric oscillator or amplifier. Expressions are derived that describe both of these average power effects for the commonly used radial heat extraction as well as for longitudinal heat extraction. It is shown that the effects of thermally induced phase mismatch can be mitigated by a judicious selection of the phase-matching conditions.
With recent advance in the epitaxial growth of silicon-germanium heterojunction, Si/SiGe HBTs with high f(sub max) and f(sub T) have received great attention in MMIC applications. In the past year, technologies for mesa-type Si/SiGe HBTs and other lumped passive components with high resonant frequencies have been developed and well characterized for circuit applications. By integrating the micromachined lumped passive elements into HBT fabrication, multi-stage amplifiers operating at 20 GHz have been designed and fabricated.
Using Si/SiGe heterojunction bipolar transistors with a maximum oscillation frequency of 52 GHz and a novel structure for passive components, a two-stage K-band lumped-element amplifier has been designed and fabricated on high-resistivity Si substrates. The chip size including biasing and RF chokes is 0.92 x 0.67 sq mm.
This paper presents the results of two 160-190 GHz monolithic low noise amplifiers (LNAs) fabricated with 0.07-microns pseudomorphic (PM) InAlAs/InGaAs/InP HEMT technology using a reactive ion etch (RIE) via hole process. A peak small signal gain of 9 dB was measured at 188 GHz for the first LNA with a 3-dB bandwidth from 164 to 192 GHz while the second LNA has achieved over 6-dB gain from 142 to 180 GHz. The same design (second LNA) was also fabricated with 0.08-micron gate and a wet etch process, showing a small signal gain of 6 dB with noise figure 6 dB. All the measurement results were obtained via on-wafer probing. The LNA noise measurement at 170 GHz is also the first attempt at this frequency.
We experimentally investigated presence of multi-frequency soliton complex that exist in high power Er/Yb-doped Fiber Amplifier. The complex with the spectral bandwidth in excess of 100 nm is bound by the Kerr nonlinearity and exhibit stable propagation.
A process and product providing a High Efficiency Microwave Power Amplifier (HEMPA) which propagates S-Band microwave frequency square waves; utilizing a program simulating FETs at high DC-to-RF efficiencies, which analyses linear elements of selected FETs in a frequency domain, and non-linear elements of the FETs in a time domain, and converts the time domain values into the frequency domain, and performs DC and S-parameter simulated measurements based on predefined data for each FET. Individual FET parameters are extracted and isolated by converting the S-parameters to admittance or impedance parameters to derive FET models for each FET, which the program uses to provide a final output of a HEMPA circuit based on iterative simulations of an amplification circuit utilizing microwave topology and frequencies. Iterative simulations of the amplification circuit analyze output values of a plurality of cascaded stages of the FETs, which are arranged in a push-pull configuration.
A high energy double-pulsed Ho:Tm:YLF 2-micrometer laser amplifier has been demonstrated. 600 mJ per pulse pair under Q-switch operation is achieved with the gain of 4.4. This solid-state laser source can be used as lidar transmitter for multiple lidar applications such as coherent wind and carbon dioxide measurements.
An efficient diode-pumped, room temperature Ho:Tm:YLF disk amplifier was realized by end-pump configuration. Compared to side pump configuration, about a factor three improvement in system efficiency has been demonstrated.
Q-switched, 400-ns pulses with output energy of 700 mJ at 2-microns, representing an optical-to-optical efficiency of 2%, was achieved from five diode-pumped Ho:Tm:YLF laser amplifiers at room-temperature.
This paper describes the development of a lidar transmitter using an optical parametric amplifier. It is designed for profiling gases of atmospheric interest at high spatial and temporal precision in the near-IR. Discussions on desirable characteristics for such a transmitter with specific reference to the case of CO, are made.