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At least 757 records · Page 42
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Exceptional high temperature retention in Al 0.93 B 0.07 N films

This paper reports the retention behavior for Al 0.93 B 0.07 N thin films, a member of the novel family of wurtzite ferroelectrics. Our experiments suggest that bipolar cycling of metal (Pt/W)/Al 0.93 B 0.07 N/W/Al 2 O 3 film stacks first induced wake-up and then a region of constant switchable polarization. Here, the films showed excellent retention of the stored polarization state. As expected, data retention was slightly inferior in the opposite state (OS) measurements. However, it is noted that even after 3.6 × 10 6 s (1000 h) at 200 °C, the OS signal margin still exceeded 200 μC/cm 2 . The predicted OS retention is 82% after 10 yr baking at 200 °C.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy

Using low-temperature cathodoluminescence spectroscopy, we study the properties of N- and Al-polar AlN layers grown by molecular beam epitaxy on bulk AlN{0001}. Compared with the bulk AlN substrate, layers of both polarities feature a suppression of deep-level luminescence, a total absence of the prevalent donor with an exciton binding energy of 28 meV, and a much increased intensity of the emission from free excitons. The dominant donor in these layers is characterized by an associated exciton binding energy of 13 meV. The observation of excited exciton states up to the exciton continuum allows us to directly extract the Γ 5 free exciton binding energy of 57 meV.

42 ENGINEERING↗
DOE OSTI2023

Sub-quarter micrometer periodically poled Al 0.68 Sc 0.32 N for ultra-wideband photonics and acoustic devices

In this study, we demonstrate the ability of polarity inversion of sputtered aluminum scandium nitride thin films through post-fabrication processes with domain widths as small as 220 nm at a periodicity of 440 nm. An approach using photo- and electron-beam lithography to generate sub-quarter micrometer feature size with adjustable duty cycle through a lift-off process is presented. Here, the film with a coercive field $E_c^+$ of 5.35 MV/cm was exercised first with a 1 kHz triangular double bipolar wave and ultimately poled with a 0.5 kHz double monopolar wave using a Radiant Precision Premier II tester. The metal polar (M-polar) and nitrogen polar (N-polar) domains were identified and characterized through potassium hydroxide wet etching as well as piezoresponse force microscopy (PFM). Well-distinguished boundaries between the oppositely polarized domain regions were confirmed through the phase diagram of the PFM results. The relationship between the electrode width, poling voltage, and domain growth was experimentally studied and statistically analyzed, where 7.96 nm/V domain width broadening vs escalating poling voltage was observed. This method produces extremely high domain spatial resolution in III-nitride materials via poling and is transferable to a CMOS-compatible photolithography process. The spatial resolution of the periodically poled Al 0.68 Sc 0.32 N is suitable for second-harmonic generation of deep ultraviolet through quasi-phase-matching and RF MEMS operating in the X-Band spectrum.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Al-rich AlGaN high electron mobility transistor gate metallization study up to 600 °C in air

Here we report a comparative study of three rectifying gate metals, W, Pd, and Pt/Au, on ultrawide bandgap Al 0.86 Ga 0.14 N barrier/Al 0.7 Ga 0.3 N channel high electron mobility transistors for use in extreme temperatures. The transistors were electrically characterized from 30 to 600 °C in air. Of the three gate metals, the Pt/Au stack exhibited the smallest change in threshold voltage (0.15 V, or 9% change between the 30 and 600 °C values, and a maximum change of 42%), the highest on/off current ratio (1.5 × 10 6 ) at 600 °C, and a modest forward gate leakage current (0.39 mA/mm for a 3,V gate bias) at 600 °C. These favorable results showcase AlGaN channel high electron mobility transistors' ability to operate in extreme temperature environments.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Ferroelectricity of wurtzite Al 1−x Hf x N heterovalent alloys

Thin films of aluminum hafnium nitride (Al1−xHfxN) were synthesized via reactive magnetron sputtering for Hf contents up to x = 0.13. X-ray diffraction showed a single c-axis oriented wurtzite phase for all films. Hard x-ray photoelectron spectroscopy demonstrated homogeneous Al:Hf distribution through the thin films and confirmed their insulating character. A collection of complementary tests showed unambiguous polarization inversion, and thus ferroelectricity in multiple samples. Current density vs electric field hysteresis measurements showed distinct ferroelectric switching current peaks, the piezoelectric coefficient d 33,f,meas measured using a double beam laser interferometer (DBLI) showed a reversal in sign with similar magnitude, and anisotropic wet etching confirmed field-induced polarization inversion. This demonstrates the possibility of using tetravalent–and not just trivalent–alloying elements to enable ferroelectricity in AlN-based thin films, highlighting the compositional flexibility of ferroelectricity in wurtzites and greatly expanding the chemistries that can be considered for future devices.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Origin of proton irradiation-induced deep acceptors in Al 0.70 Ga 0.30 N

Deep level defect introduction and carrier removal were characterized using steady-state photocapacitance (SSPC), deep level transient spectroscopy (DLTS) and lighted capacitance–voltage for proton irradiated n-type Al 0.70 Ga 0.30 N Schottky diodes grown by metal-organic vapor phase epitaxy on AlN-on-sapphire templates. SSPC observed deep levels in the as-grown diode with zero-phonon transition energies of 2.20, 2.65, 3.10, 3.40, and 4.65 eV relative to the conduction band minimum (E c ), and an additional deep level emerged at 1.20 eV with irradiation. Lighted capacitance–voltage measurements quantified the deep level concentration (N t ) of states detected by SSPC, and it was observed that N t increased with proton fluence only for the 1.2 and 4.65 eV levels. Carrier removal was much larger than the increase in N t of the 1.2 and 4.65 eV deep levels, suggesting that radiation-induced deep level compensators existed beyond what was detected with SSPC. DLTS detected additional, proton-induced deep acceptors at E c —0.55, 0.82, and 1.16 eV, the latter of which is likely the same 1.20 eV deep state observed by SSPC. The concentration of the E c —0.82 eV defect state was large enough to reconcile carrier removal with total deep level introduction. Comparing the E c —0.82 and 1.16 eV deep acceptor levels to previous experimental and theoretical reports suggests that their atomistic origins could be the nitrogen vacancy (V N ) and oxygen substituting on the nitrogen sub-lattice (O N ), respectively. This defect behavior contrasts starkly with GaN, where V N and O N are shallow donors, and demonstrates that the electronic properties of defects can evolve drastically within the AlGaN alloy system ranging from wide bandgap GaN to ultra-wide bandgap AlN.

Armstrong, Andrew Michael [Sandia National Laborat↗
DOE OSTI2024

An idealized model for the crystal structure of intermetallic compounds isostructural with Mg 3 Cr 2 Al 18

Mg 3 Cr 2 Al 18 (abbreviated in this report as MCA) is the parent phase for a large class of intermetallic compounds that belong to the cubic crystal space group, $Fd\overline{3}m$. The purpose of this paper is to introduce an ideal, unrelaxed crystal structure for compounds isostructural with MCA. There are five distinct atomic sublattices in MCA compounds, which can be denoted, $A, B, C, D,$ and $E$. With this, a general description for MCA structures can be written as $A^{8a}_{1}B^{16c}_{2}C^{16d}_{2}D^{48f}_{6}E^{96g}_{12}$, where the superscripts represent the Wyckoff special equipoints associated with the various sublattices in MCA, and the subscripts indicate the contributions of each sublattice to the stoichiometry of one formula unit in an any given MCA structured compound. Sublattices D and E are where deviations from ideality occur in real, MCA-like compounds. This paper examines MCA bond lengths, nearest-neighbour polyhedral arrangements, 3-D sublattice crystal structures, 2-D atom tessellation patterns, and crystal chemical effects associated with atomic relaxations on the $D$ and $E$ sublattices. The ideal MCA crystal structure developed in this report provides an appropriate initial structure for use as input to crystal structure refinements of diffraction data for MCA-like phases being examined experimentally, or as input for computational, atomistic simulations of the structures of such compounds.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Performance Restoration of a Tritium-Aged LaNi 4.25 Al 0.75 Sample

Hydride beds containing LaNi 4.25 Al 0.75 (LANA.75) are used to store significant quantities of tritium. These hydride beds have a limited service life due to radiolytic decay of tritium to 3He within the metal matrix. The crystal structure of the hydride is altered by trapped 3 He, which has a very low solubility in the metal. The altered structure induces the formation of a heel of trapped hydrogen isotopes and diminishes the reversible capacity of the hydride. With sufficient tritium exposure, the bed loses the ability to deliver 3He-free tritium, and replacement is needed. Demonstration of a means to regenerate tritium-aged LANA.75 in situ would delay or even eliminate the need to replace lanthanum nickel aluminum (LANA) hydride beds. This paper presents test results obtained during regeneration testing. The efficacy of regeneration testing was evaluated by comparing tritium desorption isotherms collected on the hydride before and after exposure to regeneration conditions. Testing was performed on a bench-scale tritium-aged LANA.75 sample that was previously isotopically exchanged (from tritium to deuterium), passivated, and recovered. Once transferred to a high-temperature test cell, the deuterium heel of the sample was isotopically exchanged with tritium, and a baseline desorption isotherm was collected for comparison purposes. The sample was then heated under vacuum, and comparative isotherms were gathered between regeneration evolutions. Shifts in isotherms show progressive improvements with higher-temperature exposure over the tritium-aged baseline. The heel was significantly reduced, and the reversible capacity of the hydride was essentially restored to near virgin values. For all tested conditions, the plateau pressure remained higher than virgin LANA.75.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Engineering transformation pathways in an Al 0.3 CoFeNi complex concentrated alloy leads to excellent strength–ductility combination

Guided by thermodynamic modeling, engineering phase transformation pathways via thermo-mechanical processing, in a complex concentrated alloy/high entropy alloy (HEA) of composition Al 0.3 CoFeNi, lead to a novel multi-scale microstructure consisting of fine-scale FCC + L1 2 grains mixed with B2 + BCC grains. The two-step pathway comprises initial decomposition of the parent single-phase FCC to form a fine-grained FCC + B2 microstructure, which further decomposes in the second step into the complex four-phase mixture, exhibiting an excellent combination of tensile yield stress of ~1490 MPa, ultimate tensile strength of ~1663 MPa, with a good ductility of ~12% at room temperature. This paper reports a novel multi-phase microstructure in a HEA/CCA similar to the microstructure observed in dual-phase stainless steel. This report exemplifies the novelty of HEA/CCA compositional space.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Rapid assessment of interfacial stabilization mechanisms of metastable precipitates to accelerate high-temperature Al-alloy development

Precipitate strengthened high-temperature alloys are currently used in safety-critical applications. Understanding precipitate stability and solute segregation mechanisms at high temperatures is key to designing high-strength alloys. Rapid in-situ approaches, therefore, are pivotal in accelerating the alloy design process. Hereby using the test case of a promising high-temperature Al-Cu-Mn-Zr alloy, we demonstrate the value of in-situ atom probe tomography coupled with in-situ transmission electron microscopy to reveal atomic-scale mechanisms that lead to the emergence of non-equilibrium solute segregation. Mn and Zr segregation at strengthening precipitate(θ’)-matrix interface increases the kinetic barrier for phase transformation thus retaining high-temperature strength.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Ultra-thin ZrO 2 overcoating on CuO-ZnO-Al 2 O 3 catalyst by atomic layer deposition for improved catalytic performance of CO 2 hydrogenation to dimethyl ether

Abstract An ultra-thin overcoating of zirconium oxide (ZrO 2 ) film on CuO-ZnO-Al 2 O 3 (CZA) catalysts by atomic layer deposition (ALD) was proved to enhance the catalytic performance of CZA/HZSM-5 (H form of Zeolite Socony Mobil-5) bifunctional catalysts for hydrogenation of CO 2 to dimethyl ether (DME). Under optimal reaction conditions (i.e. 240 °C and 2.8 MPa), the yield of product DME increased from 17.22% for the bare CZA/HZSM-5 catalysts, to 18.40% for the CZA catalyst after 5 cycles of ZrO 2 ALD with HZSM-5 catalyst. All the catalysts modified by ZrO 2 ALD displayed significantly improved catalytic stability of hydrogenation of CO 2 to DME reaction, compared to that of CZA/HZSM-5 bifunctional catalysts. The loss of DME yield in 100 h of reaction was greatly mitigated from 6.20% (loss of absolute value) to 3.01% for the CZA catalyst with 20 cycles of ZrO 2 ALD overcoating. Characterizations including hydrogen temperature programmed reduction, x-ray powder diffraction, and x-ray photoelectron spectroscopy revealed that there was strong interaction between Cu active centers and ZrO 2 .

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Optical characterization of deep-level defects in n-type Al x In y Ga 1- x - y P for the development of solid-state photomultiplier analogs

Characterizing intrinsic defects is an essential step in evaluating materials for novel optoelectronic device applications. For photomultipliers, suppressing dark currents is critical, but a tradeoff is present between maximizing the band gap while remaining sensitive to the wavelength of interest and minimizing the incorporation of fresh defects by growing not-yet-optimized alloys. We present a series of capacitance-based measurements, including deep-level optical spectroscopy, steady-state photocapacitance, and illuminated capacitance-voltage, on photodiodes with lightly n-type Al x In y Ga 1−x−y P absorber regions. Several deep levels are identified, including one near the midgap. Although the inclusion of aluminum increases each trap density by approximately 10×, the hole capture cross-section also appears to decrease, suggesting that Shockley–Read–Hall dark currents may be suppressed. These materials may be good candidates for the development into silicon photomultiplier analogs with a wider bandgap for scintillator applications.

III–V↗
DOE OSTI2026

Electrostatic gate-controlled quantum interference in a high-mobility two-dimensional electron gas at the (La 0.3 ⁢Sr 0.7 )(Al 0.65 ⁢Ta 0.35 )O 3 /SrTiO 3 interface

Here, we report quantum oscillations in magnetoresistance that are periodic in magnetic field (𝐵), observed at the interface between (La 0.3 ⁢Sr 0.7 )(Al 0.65 ⁢Ta 0.35 )O 3 and SrTiO 3 . Unlike Shubnikov–de Haas oscillations, which appear at magnetic fields > 7 T and diminish quickly as the temperature rises, these 𝐵-periodic oscillations emerge at low fields and persist up to 10 K. Their amplitude decays exponentially with both temperature and field, specifying dephasing of quantum interference. Increasing the carrier density through electrostatic gating results in a systematic reduction in both the amplitude and frequency of the oscillations, with complete suppression beyond a certain gate voltage. We attribute these oscillations to the Altshuler-Aronov-Spivak effect, likely arising from naturally formed closed-loop paths due to the interconnected quasi-one-dimensional conduction channels along SrTiO 3 domain walls. The relatively long phase coherence length (≃ 1.8 µ⁢m at 0.1 K), estimated from the oscillation amplitude, highlights the potential of complex oxide interfaces as a promising platform for exploring quantum interference effects and advancing device concepts in quantum technologies, such as mesoscopic interferometers and quantum sensors.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Nanostructured $\mathrm{GaAs/(Al,Ga)As}$ Waveguide for Low-Density Polariton Condensation from a Bound State in the Continuum

Exciton-polaritons are hybrid light-matter states that arise from strong coupling between an exciton resonance and a photonic cavity mode. As bosonic excitations, they can undergo a phase transition to a condensed state that can emit coherent light without a population inversion. This aspect makes them good candidates for thresholdless lasers, yet short exciton-polariton lifetime has made it difficult to achieve condensation at very low power densities. In this sense, long-lived symmetry-protected states are excellent candidates to overcome the limitations that arise from the finite mirror reflectivity of monolithic microcavities. In this work we use a photonic symmetry-protected bound state in the continuum coupled to an excitonic resonance to achieve state-of-the-art polariton condensation threshold in a GaAs/(Al,Ga)As waveguide. Most important, we show the influence of fabrication control and how surface passivation via atomic layer deposition provides a way to reduce exciton quenching at the grating sidewalls.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2020

Large tunable anomalous Hall effect in the kagome antiferromagnet U 3 Ru 4 Al 12

The Berry curvature in magnetic systems is attracting interest due to the potential tunability of topological features via the magnetic structure. f electrons, with their large spin-orbit coupling, abundance of noncollinear magnetic structures, and high electronic tunability, are attractive candidates to search for tunable topological properties. In this study, we measure anomalous Hall effect (AHE) in the distorted kagome heavy fermion antiferromagnet U 3 Ru 4 Al 12 . Furthermore, a large intrinsic AHE in high fields reveals the presence of a large Berry curvature. Moreover, the fields required to obtain the large Berry curvature are significantly different between B ∥ a and B ∥ a * , providing a mechanism to control the topological response in this system. Theoretical calculations illustrate that this sensitivity may be due to the heavy fermion character of the electronic structure. These results shed light on the Berry curvature of a strongly correlated band structure in magnetically frustrated heavy fermion materials but also emphasize 5 f electrons as an ideal playground for studying field-tuned topological states.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Interplay of itinerant electrons and Ising moments in a hybrid honeycomb quantum magnet TmNi 3 Al 9

The interplay between itinerant electrons and local magnetic moments in quantum materials brings about rich and fascinating phenomena and stimulates various developments in the theoretical framework. In this work, thermodynamic, electric transport, and neutron diffraction measurements were performed on a newly synthesized honeycomb lattice magnet TmNi 3 Al 9 . Based on the experimental data, a magnetic-field–temperature phase diagram was constructed, exhibiting three essentially different magnetic regions. Below T N =2.97±0.02KTm 3+ , moments order antiferromagnetically in zero field. We found that the Tm 3+ ions form a pseudodoublet ground state with the Ising-like moments lying normal to the two-dimensional honeycomb layers. Application of a magnetic field along the easy axis gradually suppresses the antiferromagnetic order in favor of an induced ferromagnetic state above the critical field B c =0.92±0.05T. In the vicinity of B c , a strong enhancement of the quantum spin fluctuations was observed. The quantum Ising nature of the local moments and the coupling to itinerant electrons are discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Correlation between complex spin textures and the magnetocaloric and Hall effects in Eu⁢(Ga 1−𝑥 ⁢Al 𝑥 ) 4 (𝑥=0.9, 1)

Determining the electronic phase diagram of a quantum material as a function of temperature (𝑇) and applied magnetic field (𝐻) forms the basis for understanding the microscopic origin of transport properties, such as the anomalous Hall effect (AHE) and topological Hall effect (THE). For many magnetic quantum materials, including Eu⁢Al 4 , a THE arises from a topologically protected magnetic skyrmion lattice with a nonzero scalar spin chirality. We identified a square skyrmion lattice (sSkL) peak in Eu⁢(Ga 1−𝑥 ⁢Al 𝑥 ) 4 (𝑥=0.9) identical to the peak previously observed in Eu⁢Al 4 by performing neutron-scattering measurements throughout the phase diagram. Here, comparing these neutron results with transport measurements, we found that in both compounds the maximal THE does not correspond to the sSkL area. Instead of the maximal THE, the maximal magnetocaloric-effect boundaries better identify the sSkL lattice phase observed by neutron-scattering measurements. The maximal THE therefore arises from interactions of itinerant electrons with frustrated spin fluctuations in a topologically trivial magnetic state.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Low-energy 23 Al β-delayed proton decay and 22 Na destruction in novae

The radionuclide 22 Na is a target of γ-ray astronomy searches, predicted to be produced during thermonuclear runaways driving classical novae. The 22 Na (p, γ) 23 Mg reaction is the main destruction channel of 22 Na during a nova, hence, its rate is needed to accurately predict the 22 Na yield. However, experimental determinations of the resonance strengths have led to inconsistent results. In this Rapid Communication, we report a measurement of the branching ratios of the 23 Al β-delayed protons as a probe of the key 204-keV (center-of-mass) 22 Na (p, γ) 23 Mg resonance strength. We report a factor of 5 lower branching ratio compared to the most recent literature value. The variation in 22 Na yield due to nuclear data inconsistencies was assessed using a series of hydrodynamic nova outburst simulations and has increased to a factor of 3.8, corresponding to a factor of ≈ 2 uncertainty in the maximum detectability distance. Finally, this is the first reported scientific measurement using the Gaseous Detector with Germanium Tagging system.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗