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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 739 records · Page 41
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

Experimental Research on Selective Laser Melting AlSi10Mg Alloys: Process, Densification and Performance

In this work, a set of experiments was designed to investigate the effect of process parameters on the relative density of the AlSi10Mg parts manufactured by SLM. The influence of laser scan speed v, laser power P and hatch space H, which were considered as the dominant parameters, on the powder melting and densification behavior was also studied experimentally. In addition, the laser energy density was introduced to evaluate the combined effect of the above dominant parameters, so as to control the SLM process integrally. As a result, a high relative density (> 97%) was obtained by SLM at an optimized laser energy density of 3.5-5.5 J/mm{sup 2}. Moreover, a parameter–densification map was established to visually select the optimum process parameters for the SLM-processed AlSi10Mg parts with elevated density and required mechanical properties. The results provide an important experimental guidance for obtaining AlSi10Mg components with full density and gradient functional porosity by SLM.

36 MATERIALS SCIENCE↗
DOE OSTI2010

Early age hydration and pozzolanic reaction in natural zeolite blended cements: Reaction kinetics and products by in situ synchrotron X-ray powder diffraction

The in situ early-age hydration and pozzolanic reaction in cements blended with natural zeolites were investigated by time-resolved synchrotron X-ray powder diffraction with Rietveld quantitative phase analysis. Chabazite and Na-, K-, and Ca-exchanged clinoptilolite materials were mixed with Portland cement in a 3:7 weight ratio and hydrated in situ at 40 {sup o}C. The evolution of phase contents showed that the addition of natural zeolites accelerates the onset of C{sub 3}S hydration and precipitation of CH and AFt. Kinetic analysis of the consumption of C{sub 3}S indicates that the enveloping C-S-H layer is thinner and/or less dense in the presence of alkali-exchanged clinoptilolite pozzolans. The zeolite pozzolanic activity is interpreted to depend on the zeolite exchangeable cation content and on the crystallinity. The addition of natural zeolites alters the structural evolution of the C-S-H product. Longer silicate chains and a lower C/S ratio are deduced from the evolution of the C-S-H b-cell parameter.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Advanced processing of EBSD data to distinguish the complex microstructure evolution of a Cu-Ni-Si alloy induced by fatigue

Highlights: • Microstructure investigation of the fatigue behaviour of a Cu-Ni-Si alloy • Use of ECCI and EBSD to investigate the microstructure evolution related to fatigue dislocations structures • Characterisation of local plastic accommodation through EBSD misorientation criteria - Abstract: The present work aims at identifying the evolution of the microstructure of a Cu-Ni-Si (Corson alloy) alloy after low cycle fatigue by means of advanced electron microscopy analysis techniques (SEM-ECCI, Orientation Imaging Microscopy by means of SEM-EBSD and TEM). Deep attention is paid on the material subjected to high cyclic strains where a transient cellular dislocation structure transformed into precipitate free bands. It is shown that the formation of dislocation cells leads to a high GROD and high GOSaera value and its standard deviation. However, the presence of precipitate free bands results in the low GOSarea level and its low standard deviation.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Synthesis and electrochemical capacitance of long tungsten oxide nanorod arrays grown vertically on substrate

Highlights: ► Growth of long amorphous tungsten oxide nanorods on a substrate. ► Formation of single-crystalline tungsten oxide nanorods by a heat-treatment. ► High electrochemical pseudocapacitance of 2.8 mF cm{sup −2}. ► Excellent cyclability of psuedocapacitance up to 1000 cycles. -- Abstract: Long tungsten oxide nanorods are vertically grown on Al/W/Ti coated silicon substrates using a two-step anodization process. The first anodization of the Al film forms a mesh-like mask of anodic aluminum oxide, and the second anodization of the W film results in the formation of a buffer layer, a bottom nanorod, and a top nanorod of amorphous tungsten oxide. A pore-widening process prior to the second anodization leads to the enhancement of nanorod length above approximately 500 nm. After a heat-treatment, the tungsten oxide nanorods are crystallized to form a single crystalline structure while the buffer layer forms a polycrystalline structure. The crystalline tungsten oxide nanorods show a cyclic voltammogram retaining the quasi-rectangular shape of an electrochemically reversible faradaic redox reaction, i.e., a typical pseudocapacitive behavior. The maximum electrochemical capacitance per apparent surface area reaches approximately 2.8 mF cm{sup −2} at the voltage scan rate of 20 mV s{sup −1}, and the excellent cyclability of charge–discharge process is maintained up to 1000 cycles.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Effect of nano particle sizes on the third-order optical non-linearities and nanostructure of copolymer P3HT:PCBM thin film for organic photovoltaics

Highlights: • Active layer (P3HT:PCBM) has been deposited on substrate type by spin coating at 1000 rpm. • The device was completed by evaporating a 60 nm thick, circular gold electrodes onto the P3HT:PCBM. • Nonlinear refractive indices of the three particle sizes are found to be of the order of 10{sup −7} cm{sup 2}/W - Abstract: Organic solar cells are based on (3-hexylthiophene):[6,6]-phenyl C61-butyric acid with methyl ester Bulk Heterojunction. An inverted structure has been fabricated using nano-anatase crystalline titanium dioxide, as the electron transport layer, which was prepared on either the Indium Tin Oxide coated glass (ITO—glass), or Silicon wafer, as well as on glass substrates by the sol–gel method, at different spin speed, using the spin-coating system. The effect of thickness on the surface morphology and on the optical properties of TiO{sub 2} layer, was investigated using the Atomic Force Microscopy (AFM), X-ray diffraction, and UV–visible spectrophotometer. The samples were examined to feature currents and voltages, in the darkness and light extraction efficiency of the solar cell. The highest open-circuit voltage, V{sub oc}, and power conversion efficiency were 0.66% and 0.39%, fabricated with 90 nm, respectively. The non-linear optical properties of nano-anatase TiO{sub 2} sol–gel, were investigated at different particle sizes, using the z-scan technique.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Composition and structure of Pd nanoclusters in SiO{sub x} thin film

The nucleation, distribution, composition, and structure of Pd nanocrystals in SiO{sub 2} multilayers containing Ge, Si, and Pd are studied using high resolution transmission electron microscopy (HRTEM) and x-ray photoelectron spectroscopy (XPS), before and after heat treatment. The Pd nanocrystals in the as deposited sample (sample ASD) seem to be capped by a layer of PdO{sub x}. A 1-2 eV shift in binding energy was found for the Pd-3d XPS peak, due to initial state Pd to O charge transfer in this layer. The heat treatment results in a decomposition of PdO and Pd into pure Pd nanocrystals and SiO{sub x}.

36 MATERIALS SCIENCE↗
DOE OSTI2012

The electronic and optical properties of Eu/Si-codoped anatase TiO{sub 2} photocatalyst

The electronic and optical properties of Eu/Si-codoped anatase TiO{sub 2} are investigated using the density functional theory. The calculated results show that the synergistic effects of Eu/Si codoping can effectively extend the optical absorption edge, which can lead to higher visible-light photocatalytic activities than pure anatase TiO{sub 2}. To verify the reliability of our calculated results, nanocrystalline Eu/Si-codoped TiO{sub 2} is prepared by a sol-gel-solvothermal method, and the experimental results also indicate that the codoping sample exhibits better absorption performance and higher photocatalytic activities than pure TiO{sub 2}.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Ion sources for ion implantation technology (invited)

Ion sources for ion implantation are introduced. The technique is applied not only to large scale integration (LSI) devices but also to flat panel display. For LSI fabrication, ion source scheduled maintenance cycle is most important. For CMOS image sensor devices, metal contamination at implanted wafer is most important. On the other hand, to fabricate miniaturized devices, cluster ion implantation has been proposed to make shallow PN junction. While for power devices such as silicon carbide, aluminum ion is required. For doping processes of LCD fabrication, a large ion source is required. The extraction area is about 150 cm × 10 cm, and the beam uniformity is important as well as the total target beam current.

43 PARTICLE ACCELERATORS↗
DOE OSTI2014

Surface self-diffusion of silicon during high temperature annealing

The atomic-scale mechanisms driving thermally activated self-diffusion on silicon surfaces are investigated by atomic force microscopy. The evolution of surface topography is quantified over a large spatial bandwidth by means of the Power Spectral Density functions. We propose a parametric model, based on the Mullins-Herring (M-H) diffusion equation, to describe the evolution of the surface topography of silicon during thermal annealing. Usually, a stochastic term is introduced into the M-H model in order to describe intrinsic random fluctuations of the system. In this work, we add two stochastic terms describing the surface thermal fluctuations and the oxidation-evaporation phenomenon. Using this extended model, surface evolution during thermal annealing in reducing atmosphere can be predicted for temperatures above the roughening transition. A very good agreement between experimental and theoretical data describing roughness evolution and self-diffusion phenomenon is obtained. The physical origin and time-evolution of these stochastic terms are discussed. Finally, using this model, we explore the limitations of the smoothening of the silicon surfaces by rapid thermal annealing.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Synthesis and characterization of SnO{sub 2} thin films doped with Fe to 10%

Appropriate conditions for SnO{sub 2} powder synthesis doped with iron to 10% by using sol-gel route are found. The powders obtained have been analyzed by means of analytic spectroscopic techniques: Raman, Mössbauer, diffuse reflectance, Fourier transform infrared, and X-ray diffraction. Sn{sub 0.9}Fe{sub 0.1}O{sub 2} thin films deposited by AC magnetron sputtering on silicon substrates are obtained and characterized. A crystal structure rutile-type was found for thin films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

High-κ TiO{sub 2} thin film prepared by sol-gel spin-coating method

High-k TiO{sub 2} thin film on p-type silicon substrate was fabricated by a combined sol-gel and spin coating method. Thus deposited titania film had anatase phase with a small grain size of 16 nm and surface roughness of ≅ 0.6 nm. The oxide capacitance (C{sub ox}), flat band capacitance (C{sub FB}), flat band voltage (V{sub FB}), oxide trapped charge (Q{sub ot}), calculated from the high frequency (1 MHz) C-V curve were 0.47 nF, 0.16 nF, − 0.91 V, 4.7x10{sup −12} C, respectively. As compared to the previous reports, a high dielectric constant of 94 at 1 MHz frequency was observed in the devices investigated here and an equivalent oxide thickness (EOT) was 4.1 nm. Dispersion in accumulation capacitance shows a linear relationship with AC frequencies. Leakage current density was found in acceptable limits (2.1e-5 A/cm{sup 2} for −1 V and 5.7e-7 A/cm{sup 2} for +1 V) for CMOS applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Cadmium effect on structural properties of Cu{sub 2}Zn{sub 1-x}Cd{sub x}SnS{sub 4} quinternary alloys nanostructures

The study report novel sensing plat of extended quinternart materials, Cu{sub 2}Zn{sub 1-x}d{sub x}SnS{sub 4} quinternary alloy nanostructures were fabricated onto oxidized silicon substrate by sol-gel method and characterized were synthesized by X-ray diffraction (XRD). The XRD peaks were shifted towered the lower angle side with increasing cadmium content. The practical size average of the Cu{sub 2}Zn{sub 1-x}d{sub x}SnS{sub 4} quinternary alloy nanostructures between 34.55 to 63.30 nm.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2018

Micro-architecture embedding ultra-thin interlayer to bond diamond and silicon via direct fusion

The continuous demand on miniaturized electronic circuits bearing high power density illuminates the need to modify the silicon-on-insulator-based chip architecture. This is due to the low thermal conductivity of the few hundred nanometer-thick insulator present between the silicon substrate and active layers. The thick insulator is notorious for releasing the heat generated from the active layers during the operation of devices, leading to degradation in their performance and thus reducing their lifetime. To avoid the heat accumulation, we propose a method to fabricate the silicon-on-diamond (SOD) microstructure featured by an exceptionally thin silicon oxycarbide interlayer (~3 nm). While exploiting the diamond as an insulator, we employ spark plasma sintering to render the silicon directly fused to the diamond. Importantly, this process can manufacture the SOD microarchitecture via a simple/rapid way and incorporates the ultra-thin interlayer for minute thermal resistance. The approach invented herein expects to minimize the thermal interfacial resistance of the devices and is thus deemed as a breakthrough appealing to the current chip industry.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Gate control of electron correlations towards Mott field effect transistors (MottFET)

The modulation of channel conductance in field-effect transistors (FETs) via metal-insulator-semiconductor structures has revolutionized information processing and storage. However, the limitations of silicon-based FETs in electrical switching have driven the search for new materials capable of overcoming these constraints. Electrostatic gating of competing electronic phases in a Mott material near its metal-to-insulator transition (MIT) offers the prospects of substantial modulation of the conducting electrons and electrical resistivity through small changes in band filling. While electrostatic control of the MIT has been previously reported, the advancement of Mott materials toward novel Mott-based transistors, MottFETs requires the realization of their unique physical properties in a solid-state device. In this study, we present gate control of electron correlation using a solid-state device utilizing the oxide Mott system La 1-x Sr x VO 3 as a correlated FET channel. We report on a gate resistance response that cannot be explained in a purely electrostatic framework. This behavior suggests an enhancement in effective mass and a reduction in effective carrier density as the system approaches its insulating state, consistent with theoretical predictions for Mott systems, suggesting at least 100× charge gain originating from the correlated behavior. These preliminary results pave the way toward the development of highly efficient, low-power electronic devices that could surpass the performance bottlenecks of conventional FETs by leveraging the electronic phase transitions of correlated electron systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

AN EXPERIMENTAL AND THEORETICAL STUDY OF THE IONIZATION ENERGIES OF SiC{sub 2}H{sub x} (x = 0, 1, 2) ISOMERS

We present a combined experimental and theoretical study on the formation processes and ionization energies of small organo-silicon molecules of the formula SiC{sub 2}H{sub x} (x = 0, 1, 2). These organic molecules are considered important benchmark systems in understanding the formation of silicon- and carbon-bearing grains in the outflow of carbon stars. The studies identify four distinct (hydrogenated) silicon-carbon molecules together with their ionization energies: c-SiC{sub 2} [9.75 {+-} 0.10 eV; 9.83 {+-} 0.05 eV], l-HCCSi [7.00 {+-} 0.05 eV], c-SiC{sub 2}H [7.27 {+-} 0.05 eV], and c-SiC{sub 2}H{sub 2} [9.05 {+-} 0.05 eV; 8.96 {+-} 0.05 eV] with numbers in italics depicting computed data. Implications of these results to the non-equilibrium chemistry in shocked regions of circumstellar envelopes of carbon stars are also discussed.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2012

Microstructure and electrical properties of LaNiO{sub 3} thin films by RF sputtering for the growth of (Pb,La)(Zr,Ti)O{sub 3} films on silicon and nickel substrates

Conductive LaNiO{sub 3} (LNO) thin films were deposited on Si substrates by RF sputtering at room temperature to 600 Degree-Sign C. X-ray diffraction of the LNO films showed that preferred orientation varied from (100) below 500 Degree-Sign C to (110) at 600 Degree-Sign C at deposition temperature of 200-600 Degree-Sign C. The room temperature resistivity was 2250-3400 {mu}{Omega}-cm at the range of 200 Degree-Sign C {approx}500 Degree-Sign C. The LNO films, deposited at room temperature, were postannealed in air from 500 to 800 Degree-Sign C, and the resistivity value was 280 {mu}{Omega}-cm at a postannealing temperature of 600 Degree-Sign C. Subsequently, sol-gel derived (Pb,La)(Zr,Ti)O{sub 3} thin films were deposited on LNO-buffered nickel substrates and characterized, the results were compared to those of the same films on silicon substrates. The comparison demonstrated that the performance characteristics of the LNO-buffered nickel foils are similar to those of LNO-buffered silicon substrates. Thus, LNO films prepared by the sputtering method can act as an effective barrier layer on nickel substrates for embedded microelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Relaxation of bending stresses and the reversibility of residual stresses in amorphous soft magnetic alloys

The reversibility of residual bending stresses is revealed in ribbon samples of cobalt- and iron-based amorphous alloys Co{sub 69}Fe{sub 3.7}Cr{sub 3.8}Si{sub 12.5}B{sub 11} and Fe{sub 57}Co{sub 31}Si{sub 2.9}B{sub 9.1}: the ribbons that are free of applied stresses and bent under the action of residual stresses become completely or incompletely straight upon annealing at the initial temperatures. The influence of annealing on the relaxation of bending stresses is studied. Preliminary annealing is found to sharply decrease the relaxation rate of bending stresses, and the initial stage of fast relaxation of these stresses is absent. Complete straightening of preliminarily annealed ribbons is shown to occur at significantly higher temperatures than that of the initial ribbons. Incomplete straightening of the ribbons is explained by the fact that bending stresses relaxation at high annealing temperatures proceeds due to both reversible anelastic deformation and viscous flow, which is a fully irreversible process. Incomplete reversibility is also caused by irreversible processes, such as the release of excess free volume and clustering (detected by small-angle X-ray scattering). The revealed differences in the relaxation processes that occur in the cobalt- and iron-based amorphous alloys are discussed in terms of different atomic diffusion mobilities in these alloys.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2011

Terbium luminescence in alumina xerogel fabricated in porous anodic alumina matrix under various excitation conditions

Terbium-doped alumina xerogel layers are synthesized by the sol-gel method in pores of a porous anodic alumina film 1 {mu}m thick with a pore diameter of 150-180 nm; the film is grown on a silicon substrate. The fabricated structures exhibit terbium photoluminescence with bands typical of trivalent terbium terms. Terbium X-ray luminescence with the most intense band at 542 nm is observed for the first time for such a structure. Morphological analysis of the structure by scanning electron microscopy shows the presence of xerogel clusters in pore channels, while the main pore volume remains unfilled and pore mouths remain open. The data obtained confirm the promising applications of fabricated structures for developing matrix converters of X-rays and other ionizing radiations into visible light. The possibilities of increasing luminescence intensity in the matrix converter are discussed.

36 MATERIALS SCIENCE↗