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At least 739 records · Page 41
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

The ATLAS ITk Strip detector system for the Phase-II LHC upgrade

In the view of the luminosity increase foreseen by the High-Luminosity Large Hadron Collider program at CERN, the ATLAS experiment initiated an R&D program to replace its complete inner detector (ID) system. The new Inner Tracker (ITk) system, anticipated to be installed by 2028, will be a new all-silicon based tracker including Strip and Pixel detector technologies. The new detector is designed to meet the requirements of operating under a harsh environment namely, high radiation levels, increased pile-up and data rates while decrease the material budget and maintain or even improve the performance. The Strip project has advanced in several areas the last years while facing challenges moving from pre-production to production. Here, this manuscript gives an overview of the ITk Strip system and describes the advancements and challenges to date.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
NASA NTRSDate not supplied

Parallel plate capacitor TiN KID array development for the Balloon Experiment for Galactic Infrared Science

The Balloon Experiment for Galactic Infrared Science (BEGINS) will map dust spectral energy distributions (SEDs) between 25 and 250 microns near high-mass star regions, characterizing the radiation fields and dust properties of a variety of stellar environments. To accomplish these goals, BEGINS will be outfitted with roughly 1,800 titanium nitride (TiN), superconducting kinetic inductance detectors (KIDs). A parallel plate capacitor KID design is used to achieve high pixel density arrays. A cryogenic, silicon-based, metal-mesh linear variable filter will define detector band passes across the KID array. Optical coupling to the filters and telescope will be accomplished using silicon microlenses. Here we present laboratory characterization of prototype BEGINS detector arrays, describe future array development plans, and describe the testbed used to characterize the arrays.

Nicholas F. Cothard↗
NASA NTRS2016

Mechanical Design and Development of TES Bolometer Detector Arrays for the Advanced ACTPol Experiment

The next generation Advanced ACTPol (AdvACT) experiment is currently underway and will consist of four Transition Edge Sensor (TES) bolometer arrays, with three operating together, totaling 5800 detectors on the sky. Building on experience gained with the ACTPol detector arrays, AdvACT will utilize various new technologies, including 150 mm detector wafers equipped with multichroic pixels, allowing for a more densely packed focal plane. Each set of detectors includes a feedhorn array of stacked silicon wafers which form a spline pro le leading to each pixel. This is then followed by a waveguide interface plate, detector wafer, back short cavity plate, and backshort cap. Each array is housed in a custom designed structure manufactured from high purity copper and then gold plated. In addition to the detector array assembly, the array package also encloses cryogenic readout electronics. We present the full mechanical design of the AdvACT high frequency (HF) detector array package along with a detailed look at the detector array stack assemblies. This experiment will also make use of extensive hardware and software previously developed for ACT, which will be modi ed to incorporate the new AdvACT instruments. Therefore, we discuss the integration of all AdvACT arrays with pre-existing ACTPol infrastructure.

Advanced ACTPol (AdvACT)↗
NASA NTRS1982

Pyroelectric detector arrays

A pyroelectric detector array and the method for using it are described. A series of holes formed through a silicon dioxide layer on the surface of a silicon substrate forms the mounting fixture for the pyroelectric detector array. A series of nontouching strips of indium are formed around the holes to make contact with the backside electrodes and form the output terminals for individual detectors. A pyroelectric detector strip with front and back electrodes, respectively, is mounted over the strips. Biasing resistors are formed on the surface of the silicon dioxide layer and connected to the strips. A metallized pad formed on the surface of layer is connected to each of the biasing resistors and to the film to provide the ground for the pyroelectric detector array.

Fripp, A. L.↗
DOE OSTI2023

First measurement of the nuclear-recoil ionization yield in silicon at 100 eV

We measured the nuclear--recoil ionization yield in silicon with a cryogenic phonon-sensitive gram-scale detector. Neutrons from a mono-energetic beam scatter off of the silicon nuclei at angles corresponding to energy depositions from 4 keV down to 100 eV, the lowest energy probed so far. The results show no sign of an ionization production threshold above 100 eV. These results call for further investigation of the ionization yield theory and a comprehensive determination of the detector response function at energies below the keV scale.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1982

Pyroelectric detector arrays

A pryoelectric detector array and the method for making it are described. A series of holes formed through a silicon dioxide layer on the surface of a silicon substrate forms the mounting fixture for the pyroelectric detector array. A series of nontouching strips of indium are formed around the holes to make contact with the backside electrodes and form the output terminals for individual detectors. A pyroelectric detector strip with front and back electrodes, respectively, is mounted over the strip. Biasing resistors are formed on the surface of the silicon dioxide layer and connected to the strips. A metallized pad formed on the surface of the layer is connected to each of the biasing resistors and to the film to provide the ground for the pyroelectric detector array.

Fripp, A. L.↗
DOE OSTI2023

First Measurement of the Nuclear-Recoil Ionization Yield in Silicon at 100 eV

We measured the nuclear-recoil ionization yield in silicon with a cryogenic phonon-sensitive gram-scale detector. Neutrons from a mono-energetic beam scatter off of the silicon nuclei at angles corresponding to energy depositions from 4 keV down to 100 eV, the lowest energy probed so far. The results show no sign of an ionization production threshold above 100 eV. In conclusion, these results call for further investigation of the ionization yield theory and a comprehensive determination of the detector response function at energies below the keV scale.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2022

Enhancement of radiation detection performance with reduction of EH 6/7 deep levels in n-type 4H–SiC through thermal oxidation

We report the effect of EH 6/7 electron trap centers alone on the performance of high-resolution radiation detectors fabricated on n-type 4H–SiC epitaxial layers. A Schottky barrier detector (SBD) and a metal-oxide-semiconductor (MOS) capacitor detector fabricated using two sister samples derived from the same 50 μm 4H–SiC parent wafer exhibited widely different energy resolutions of 0.4% and 0.9% for 5486 keV alpha particles. An equivalent noise charge model analysis ruled out the effect of the detector capacitance and the leakage current on the resolution of the detectors. Deep level transient spectroscopic studies revealed the presence of two trapping centers in each detector within the temperature scan range 240–800 K. The Z 1/2 center, a potential electron trap, was detected in both the detectors in equal concentration, which suggested that the observed difference in the energy resolution is due to the presence of the other defect, the EH 6/7 center, in the SBD. The capture cross section of the EH 6/7 center was calculated to be three orders of magnitude higher than the second defect [a carbon antisite vacancy (CAV) center] observed in the MOS detector with an activation energy of 1.10 eV, which accounted for the enhanced electronic trapping in the SBD leading to its poor energy resolution. It has been proposed that the EH 6/7 centers in the SBD have likely been reconfigured to CAV pairs during the thermal growth of the silicon dioxide layer in the MOS detector. The proposed formation mechanism of CAV, a stable qubit state for quantum information processing, addresses the outstanding questions related to the role of defect dynamics in their formation.

61 RADIATION PROTECTION AND DOSIMETRY↗
DOE OSTI2020

Irradiation Tests of Superconducting Detectors and Comparison with Simulations

For the future satellite mission at the second sun–earth Lagrangian point (L2), we need to mitigate phonon propagation created by cosmic rays to superconducting detectors. We simulate phonon propagation in silicon substrate and show that putting a metal layer on the substrate or making hole in the substrate reduces the propagation. We also show a function which shows the response of a TES bolometer on a substrate. To validate these theoretical expectations, we make irradiation tests using two types of superconducting detectors: transition edge sensor bolometers and kinetic inductance detectors. From the tests, we show that putting metal can reduce correlations between detectors and number of hit events from charged particles.

47 OTHER INSTRUMENTATION↗
NASA NTRS2012

Fabrication of an Absorber-Coupled MKID Detector

Absorber-coupled microwave kinetic inductance detector (MKID) arrays were developed for submillimeter and far-infrared astronomy. These sensors comprise arrays of lambda/2 stepped microwave impedance resonators patterned on a 1.5-mm-thick silicon membrane, which is optimized for optical coupling. The detector elements are supported on a 380-mm-thick micro-machined silicon wafer. The resonators consist of parallel plate aluminum transmission lines coupled to low-impedance Nb microstrip traces of variable length, which set the resonant frequency of each resonator. This allows for multiplexed microwave readout and, consequently, good spatial discrimination between pixels in the array. The transmission lines simultaneously act to absorb optical power and employ an appropriate surface impedance and effective filling fraction. The fabrication techniques demonstrate high-fabrication yield of MKID arrays on large, single-crystal membranes and sub-micron front-to-back alignment of the micro strip circuit. An MKID is a detector that operates upon the principle that a superconducting material s kinetic inductance and surface resistance will change in response to being exposed to radiation with a power density sufficient to break its Cooper pairs. When integrated as part of a resonant circuit, the change in surface impedance will result in a shift in its resonance frequency and a decrease of its quality factor. In this approach, incident power creates quasiparticles inside a superconducting resonator, which is configured to match the impedance of free space in order to absorb the radiation being detected. For this reason MKIDs are attractive for use in large-format focal plane arrays, because they are easily multiplexed in the frequency domain and their fabrication is straightforward. The fabrication process can be summarized in seven steps: (1) Alignment marks are lithographically patterned and etched all the way through a silicon on insulator (SOI) wafer, which consists of a thin silicon membrane bonded to a thick silicon handle wafer. (2) The metal microwave circuitry on the front of the membrane is patterned and etched. (3) The wafer is then temporarily bonded with wafer wax to a Pyrex wafer, with the SOI side abutting the Pyrex. (4) The silicon handle component of the SOI wafer is subsequently etched away so as to expose the membrane backside. (5) The wafer is flipped over, and metal microwave circuitry is patterned and etched on the membrane backside. Furthermore, cuts in the membrane are made so as to define the individual detector array chips. (6) Silicon frames are micromachined and glued to the silicon membrane. (7) The membranes, which are now attached to the frames, are released from the Pyrex wafer via dissolution of the wafer wax in acetone.

Brown, Ari↗
DOE OSTI2026

A compact, low-power epithermal neutron counter for lunar water detection

The detection and characterization of lunar water are critical for enabling sustainable human and robotic exploration of the Moon. Orbital neutron spectrometers, such as instruments on Lunar Prospector and the Lunar Reconnaissance Orbiter, have revealed hydrogen-rich regions near the poles but are limited by coarse spatial resolution and low counting efficiency. We present a compact, lightweight, and low-power epithermal neutron detector based on boron-coated silicon imagers, designed to probe subsurface hydrogen at decimeter scales from mobile platforms such as lunar rovers. This instrument leverages the high neutron capture cross-section of 10 B to convert epithermal neutrons into detectable α and 7 Li ions in a fully-depleted silicon imager, providing a unique event topology to identify neutrons while suppressing backgrounds. Monte Carlo simulations demonstrate that a 3 μm boron layer achieves optimal neutron detection efficiency, further enhanced with polyethylene moderation to improve sensitivity to the 0.4 eV–500 keV epithermal energy range. For a 10 cm 2 active area, the detector achieves sensitivity to H 2 O weight fractions as low as 0.01 wt% in a 15 minute measurement. This scalable, portable, low-mass design is well-suited for integration into upcoming Artemis and commercial lunar rovers, providing a transformative capability for in-situ resource prospecting and ground-truth validation of orbital measurements.

Detector modelling and simulations I (interaction ↗
NASA NTRS2013

Large-aperture Wide-bandwidth Antireflection-coated Silicon Lenses for Millimeter Wavelengths

The increasing scale of cryogenic detector arrays for submillimeter and millimeter wavelength astrophysics has led to the need for large aperture, high index of refraction, low loss, cryogenic refracting optics. Silicon with n 3.4, low loss, and high thermal conductivity is a nearly optimal material for these purposes but requires an antireflection (AR) coating with broad bandwidth, low loss, low reflectance, and a matched coefficient of thermal expansion. We present an AR coating for curved silicon optics comprised of subwavelength features cut into the lens surface with a custom three-axis silicon dicing saw. These features constitute a metamaterial that behaves as a simple dielectric coating.We have fabricated silicon lenses as large as 33.4 cm in diameter with micromachined layers optimized for use between 125 and 165 GHz. Our design reduces average reflections to a few tenths of a percent for angles of incidence up to 30deg with low cross polarization.We describe the design, tolerance, manufacture, and measurements of these coatings and present measurements of the optical properties of silicon at millimeter wavelengths at cryogenic and room temperatures. This coating and lens fabrication approach is applicable from centimeter to submillimeter wavelengths and can be used to fabricate coatings with greater than octave bandwidth.

thermal expansion↗
DOE OSTI2025

Expected tracking performance of the ATLAS Inner Tracker at the High-Luminosity LHC

The high-luminosity phase of LHC operations (HL-LHC), will feature a large increase in simultaneous proton-proton interactions per bunch crossing up to 200, compared with a typical leveling target of 64 in Run 3. Such an increase will create a very challenging environment in which to perform charged particle trajectory reconstruction, a task crucial for the success of the ATLAS physics program, and will exceed the capabilities of the current ATLAS Inner Detector (ID). A new all-silicon Inner Tracker (ITk) will replace the current ID in time for the start of the HL-LHC. To ensure successful use of the ITk capabilities in Run 4 and beyond, the ATLAS tracking software has been successfully adapted to achieve state-of-the-art track reconstruction in challenging high-luminosity conditions with the ITk detector. This paper presents the expected tracking performance of the ATLAS ITk based on the latest available developments since the ITk technical design reports.

47 OTHER INSTRUMENTATION↗
NASA NTRS2013

Large-Aperture Wide-Bandwidth Anti-Reflection-Coated Silicon Lenses for Millimeter Wavelengths

The increasing scale of cryogenic detector arrays for sub-millimeter and millimeter wavelength astrophysics has led to the need for large aperture, high index of refraction, low loss, cryogenic refracting optics. Silicon with n = 3.4, low loss, and relatively high thermal conductivity is a nearly optimal material for these purposes, but requires an antireflection (AR) coating with broad bandwidth, low loss, low reflectance, and a matched coffecient of thermal expansion. We present an AR coating for curved silicon optics comprised of subwavelength features cut into the lens surface with a custom three axis silicon dicing saw. These features constitute a metamaterial that behaves as a simple dielectric coating. We have fabricated and coated silicon lenses as large as 33.4 cm in diameter with coatings optimized for use between 125-165 GHz. Our design reduces average reflections to a few tenths of a percent for angles of incidence up to 30 deg. with low cross-polarization. We describe the design, tolerance, manufacture, and measurements of these coatings and present measurements of the optical properties of silicon at millimeter wavelengths at cryogenic and room temperatures. This coating and lens fabrication approach is applicable from centimeter to sub-millimeter wavelengths and can be used to fabricate coatings with greater than octave bandwidth.

millimeter wavelength astrophysics↗
DOE OSTI2026

Design and simulation of a muon detector to characterize geological overburden

This study presents the design, construction, and simulation of a mobile muon detector tailored for geological overburden characterization. The detector employs plastic scintillator paddles with silicon photomultipliers (SiPMs) and a QuarkNet data acquisition system, offering a portable solution suitable for remote field deployment. The simulator’s modular aluminum frame allows for adjustable geometry and directional sensitivity, while its battery system supports over a week of autonomous operation. Preliminary experimental tests confirmed that its muon flux measurements were consistent with theoretical expectations. A comprehensive simulation framework using Geant4 and CORSIKA was developed to model detector response and overburden effects. Analytical and Monte Carlo methods were used to assess quadrant resolution and infer muon directionality. This work lays the foundation for future overburden mapping and supports the development of reconstruction algorithms for geological applications.

72 - PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
NASA NTRS2020

Excess Heat Capacity in Mo/Au Transition Edge Sensor Bolometric Detectors

Excessheat capacity in a bolometric detector has the consequence of increasing or leading to multiple device time con-stants.The Mo/Au bilayer transition edge sensor (TES) bolo-metric detectors intended for the high resolution mid-infrared spectrometer (HIRMES) have two response time, one of which is a few times longer than that estimated from materials used in the design. The relative contribution of this settling time to the overall time response of the detectors is roughly proportional with the pixel area, which ranges between ~0.3 and 2.6 mm2.Use of laser ablation to remove sections of the silicon membranes comprising the pixels results in a detector response with a smaller contribution from the secondary time constant.Additional information about the nature of this excess heat capacity is gleaned from glancing in-cidence x-ray diffraction, which reveals the presence of molyb-denum silicides near the silicon surface from the bi-layer deposi-tion.Quantitative analysis of the concentration of excess molyb-denum, estimated with secondary ion mass spectroscopy, is com-mensurate to the additional heat capacity needed to explain the anomalous time response of the detectors.

HIRMES↗
NASA NTRS1989

Extrinsic germanium Blocked Impurity Bank (BIB) detectors

Ge:Ga blocked-impurity-band (BIB) detectors with long wavelength thresholds greater than 190 microns and peak quantum efficiencies of 4 percent, at an operating temperature of 1.8 K, have been fabricated. These proof of concept devices consist of a high purity germanium blocking layer epitaxially grown on a Ga-doped Ge substrate. This demonstration of BIB behavior in germanium enables the development of far infrared detector arrays similar to the current silicon-based devices. Present efforts are focussed on improving the chemical vapor deposition process used to create the blocking layer and on the lithographic processing required to produce monolithic detector arrays in germanium. Approaches to test the impurity levels in both the blocking and active layers are considered.

Krabach, Timothy N.↗