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A system, method, and apparatus for an avalanche photodiode with an enhanced multiplier layer are disclosed herein. In particular, the present disclosure teaches an avalanche photodiode having a multiplier with alternating layers of one or more quantum wells and one or more spacers. A method of making the avalanche photodiode includes growing the multiplier on a substrate.
We demonstrate GaSb-based laterally-coupled distributed-feedback type-I cascade diode lasers emitting near 2.9 µm as potential sources for OH measurements. The laser heterostructures consist of two GaInAsSb quantum well stages in series separated by GaSb/AlSb/InAs tunnel junction and InAs/AlSb electron injectors. Single-mode emission is generated using second order lateral Bragg grating etched alongside narrow ridge waveguides. The lasers were fabricated into 2-mm-long devices, solder-mounted epi-up on copper submounts, and operate at room temperature. With an anti-reflection coating at the emission facet, the lasers exhibit a typical current threshold of 110 mA at 20 °C and emit more than 14 mW of output power. The Bragg wavelength temperature tuning rate was 0.29 nm/°C.
The mid and thermal infrared (MTIR) for the Earth surface is defined between 3 and 14µm. In the outer solar system, objects are colder and their Planck response shifts towards longer wavelengths. Hence for these objects (e.g. icy moons, polar caps, comets, Europa), the thermal IR definition usually stretches out to 50µm and beyond. Spectroscopy has been a key part of this scientific exploration because of its ability to remotely determine elemental and mineralogical composition. Many key gas species such as methane, ammonia, sulfur, etc. also have vibrational bands which show up in the thermal infrared spectrum above the background response. Over the past few decades, the Jet Propulsion Laboratory has been building up a portfolio of technology to capture the MTIR for various scientific applications. Three recent sensors are briefly reviewed: The airborne Hyperspectral thermal emission spectrometer (HyTES), the ECOsystem Spaceborne Thermal Radiometer Experiment on Space Station (ECOSTRESS) and Mars Climate Sounder (MCS)/DIVINER. Each of these sensors utilize a different technology to provide a remote sensing product based on MTIR science. For example, HyTES is a push-brooming hyperspectral imager which utilizes a large format quantum well infrared photodetector (QWIP). The goal is to transition this to a new complementary barrier infrared photodetector (CBIRD) with a similar long wave cut-off and increased sensitivity. ECOSTRESS is a push-whisk Mercury Cadmium Telluride (MCT) based high speed, multi-band, imager which will eventually observe and characterize plant/vegetation functionality and stress index from the International Space Station (ISS) across the contiguous United States (CONUS). MCS/DIVINER utilizes thermopile technology to capture the thermal emission from the polar caps and shadow regions of the moon. Each sensor utilizes specific JPL technology to capture unique science. similar long wave cut-off and increased sensitivity. ECOSTRESS is a push-whisk Mercury Cadmium Telluride (MCT) based high speed, multi-band, imager which will eventually observe and characterize plant/vegetation functionality and stress index from the International Space Station (ISS) across the contiguous United States (CONUS). MCS/DIVINER utilizes thermopile technology to capture the thermal emission from the polar caps and shadow regions of the moon. Each sensor utilizes specific JPL technology to capture unique science.
In 1988 DARPA provided funding to NASA’s Goddard Space Flight Center to support the development of GaAs Quantum Well Infrared Photodetectors (QWIP). The goal was to make a single element photodetector that might be expandable to a two-dimensional array format. Ultimately, this led to the development of a 128 x 128 element array in collaboration with AT&T Bell Labs and Rockwell Science Center in 1990. We continued to develop numerous generations of QWIP arrays most recently resulting in the multi-QWIP focal plane for the NASA-US Geological Survey (USGS) Landsat 8 mission launched in 2013 and a similar instrument on the Landsat 9 mission to be launched in 2020. Toward the end of the Landsat 8 QWIP-based Thermal Infrared Sensor (TIRS) instrument the potential of the newly developed Strained Layer Superlattice (SLS) detector array technology became of great interest to NASA for three primary reasons: 1) higher operating temperature; 2) broad spectral response and; 3) higher sensitivity. We have collaborated extensively with QmagiQ, LLC and Northwestern University to further pursue and advance the SLS technology ever since we started back in 2012. In December of 2018 we launched the first SLS-based IR camera system to the International Space Station on board the Robotic Refueling Mission #3 (RRM3). This paper will describe the evolution of QWIP technology leading to the current development of SLS-based imaging systems at the Goddard Space Flight Center over the past 30 years.
In this paper, we discuss the development of very sensitive long wavelength infrared (LWIR) GaAs/AlxGa1-xAs quantum well infrared photodetectors (QWIPs), fabrication of random reflectors for efficient light coupling, and the demonstration of first hand-held long-wavelength 256x256 QWIP focal plane array camera. Excellent imagery, with a noise equivalent differential temperature of 25 mK has been achieved.
A 640 512 pixel, long-wavelength cutoff, narrowband(delta lambda/lambda ~ 10%) quantum-well infrared photodetector(QWIP) focal plane array (FPA), a four-band QWIP FPA in the 4??m spectral region, and a broadband (delta lambda/lambda ~ 42%)QWIP FPA having a 15.4 m cutoff have been demonstrated. In this paper, we discuss the electrical and optical characterization of these FPAs, and their performance. In addition, we discuss the development of a very sensitive (NEDT ~ 10.6 mK) 640 X 512 pixel thermal imaging camera having a 9 lambda m cutoff.
Infrared focal plane arrays (FPAs) covering broad mid- and long-IR spectral ranges are the central parts of the spectroscopic and imaging instruments in several Earth and planetary science missions. To be implemented in the space instrument these FPAs need to be large-format, uniform, reproducible, low-cost, low 1/f noise, and radiation hard. Quantum Well Infrared Photodetectors (QWIPs), which possess all needed characteristics, have a great potential for implementation in the space instruments. However a standard QWIP has only a relatively narrow spectral coverage. A multi-color QWIP, which is compromised of two or more detector stacks, can to be used to cover the broad spectral range of interest. We will discuss our recent work on development of multi-color QWIP for Hyperspectral Thermal Emission Spectrometer instruments. We developed QWIP compromising of two stacks centered at 9 and 10.5 μm, and featuring 9 grating regions optimized to maximize the responsivity in the individual subbands across the 7.5-12 μm spectral range. The demonstrated 1024x1024 QWIP FPA exhibited excellent performance with operability exceeding 99% and noise equivalent differential temperature of less than 15 mK across the entire 7.5-12 μm spectral range.
Disclosed is an optically pumped vertical cavity laser structure operating in the mid-infrared region, which has demonstrated room-temperature continuous wave operation. This structure uses a periodic gain active region with type I quantum wells comprised of InGaAsSb, and barrier/cladding regions which provide strong hole confinement and substantial pump absorption. A preferred embodiment includes at least one wafer bonded GaAs-based mirror. Several preferred embodiments also include means for wavelength tuning of mid-IR VCLs as disclosed, including a MEMS-tuning element. This document also includes systems for optical spectroscopy using the VCL as disclosed, including systems for detection concentrations of industrial and environmentally important gases.
Large improvements in the efficiencies of visible light emitting diodes (LEDs) have been realized over the last decade. Extending the range of wavelengths over which efficient emission can be realized continues to be a goal of active research. Efficiency droop refers to a non-thermal decrease in internal quantum efficiency with increasing current density that affects III-nitride LEDs in general, but more severely those with longer emission wavelengths. The so-called green gap is mainly related to the wavelength dependence of efficiency droop. The peak EQE in commercial green LEDs exceeds 60% but corresponds to a current density that is an order of magnitude lower than required for applications. In this presentation, we will review some of the underlying physics that contribute to the wavelength dependence of droop. We will discuss some challenges in the development of long wavelength III-nitride LEDs and possible strategies to mitigate efficiency droop based on the understanding that nonradiative Auger recombination is the root cause. One general strategy is to engineer the multi-quantum well active region to minimize the average carrier density. Another approach is to design wells with a more favorable balance between the radiative and Auger coefficients. Finally, we will present the current status of the performance of green, yellow and red III-Nitride LEDs.
III-V multijunction solar cells have the highest efficiencies of any PV technology. These devices are currently the dominant space PV technology, and are being investigated for a wide range of other applications where efficiency is a key metric. In this presentation, we describe a 3-junction cell with the highest 1-sun efficiency to date: 39.5% under the global spectrum, which is higher than previous 6-junction devices. When tuned for the space spectrum, the cell achieves 34.2% beginning-of-life efficiency, without consideration for radiation hardness. These efficiency improvements are enabled by combining advances in device architectures and extended-defect control strategies. This latest 3-junction device includes a high-performance front-junction GaInP top cell, an optically-thick strain-balanced quantum well middle cell, and a lattice-mismatched GaInAs bottom cell with record performance despite dislocations. These advances not only allow high efficiency photovoltaics for both space and terrestrial PV applications, but also help enable new applications of III-V materials.
Disclosed is an optically pumped vertical cavity laser structure operating in the mid-infrared region, which has demonstrated room-temperature continuous wave operation. This structure uses a periodic gain active region with type I quantum wells comprised of InGaAsSb, and barrier/cladding regions which provide strong hole confinement and substantial pump absorption. A preferred embodiment includes at least one wafer bonded GaAs-based mirror. Several preferred embodiments also include means for wavelength tuning of mid-IR VCLs as disclosed, including a MEMS-tuning element. This document also includes systems for optical spectroscopy using the VCL as disclosed, including systems for detection concentrations of industrial and environmentally important gases.
This study explores how the quantum confined Stark effect (QCSE) influences minority carrier lifetimes in III-N quantum wells (QWs) by varying the well width. It is found that increasing QW width from zero (bulk material) increases radiative lifetime due to charge separation until charge screening effects reduce and rectify the QCSE for large well widths.
We report terahertz quantum-cascade lasers operating predominantly at 1.90 THz with side modes as low as 1.86 THz (lambda approx. equal to 161 micrometers, planck's constant omega approx. equal to 7.7 meV). This is the longest wavelength to date of any solid-state laser that operates without assistance of a magnetic field. Carriers are injected into the upper radiative state by using a single quantum-well injector, which resulted in a significant reduction of free-carrier losses. The laser operated up to a heat-sink temperature of 110 K in pulsed mode, 95 K in continuous wave (cw) mode, and the threshold current density at 5 K was approx. 140 A per square centimeters.
The LINPACK benchmark reports the performance of a computer for solving a system of linear equations with dense random matrices. Although this task was not designed with a real application directly in mind, the LINPACK benchmark has been used to define the list of TOP500 supercomputers since the debut of the list in 1993. We propose that a similar benchmark, called the quantum LINPACK benchmark, could be used to measure the whole machine performance of quantum computers. The success of the quantum LINPACK benchmark should be viewed as the minimal requirement for a quantum computer to perform a useful task of solving linear algebra problems, such as linear systems of equations. We propose an input model called the Random Circuit Block-Encoded Matrix (RACBEM), which is a proper generalization of a dense random matrix in the quantum setting. The RACBEM model is efficient to be implemented on a quantum computer and can be designed to optimally adapt to any given quantum architecture, with relying on a black-box quantum compiler. Besides solving linear systems, the RACBEM model can be used to perform a variety of linear algebra tasks relevant to many physical applications, such as computing spectral measures, time series generated by a Hamiltonian simulation, and thermal averages of the energy. We implement these linear algebra operations on IBM Q quantum devices as well as quantum virtual machines, and demonstrate their performance in solving scientific computing problems.
Silicon-germanium heterostructures have successfully hosted quantum dot qubits, but the intrinsic near-degeneracy of the two lowest valley states poses an obstacle to high-fidelity quantum computing. Here we present a modification to the Si/SiGe heterostructure by the inclusion of a spike in germanium concentration within the quantum well in order to increase the valley splitting. The heterostructure is grown by chemical vapor deposition and magnetospectroscopy is performed on gate-defined quantum dots to measure the excited state spectrum. We demonstrate a large and widely tunable valley splitting as a function of applied vertical electric field and lateral dot confinement. We further investigate the role of the germanium spike by means of tight-binding simulations in single-electron dots and show a robust doubling of the valley splitting when the spike is present, as compared to a standard (spike-free) heterostructure. This doubling effect is nearly independent of the electric field, germanium content of the spike, and spike location. This experimental evidence of a stable, tunable quantum dot, despite a drastic change to the heterostructure, provides a foundation for future heterostructure modifications.
Here, we propose a scheme to create an electronic Floquet vortex state by irradiating a two-dimensional semiconductor with a laser light carrying nonzero orbital angular momentum. We analytically and numerically study the properties of the Floquet vortex states, with methods analogous to the ones previously applied to the analysis of superconducting vortex states. We show that such Floquet vortex states are similar to superconducting vortex states, and they exhibit a wide range of tunability. To illustrate the potential utility of such tunability, we show how such states could be used for quantum state engineering.
In this paper, we will discuss the performance in terms of quantum efficiency, NEAT, uniformity, operability, and modulation transfer functions of the 1024x1024 pixel arrays and the progress of dualband QWIP focal plane array development work.
Thermophotovoltaic (TPV) power conversion has to date demonstrated conversion efficiencies exceeding 20% when coupled to a heat source. Current III-V semiconductor TPV technology makes use of planar devices with bandgaps tailored to the heat source. The efficiency can be improved further by increasing the collection efficiency through the incorporation of InAs quantum dots. The use of these dots can provide sub-gap absorption and thus improve the cell short circuit current without the normal increase in dark current associated with lowering the bandgap. We have developed self-assembled InAs quantum dots using the Stranski-Krastanov growth mode on 0.74 eV In0.53GaAs lattice-matched to InP and also on lattice-mismatched 0.6 eV In0.69GaAs grown on InP through the use of a compositionally graded InPAsx buffer structure, by metalorganic vapor phase epitaxy (MOVPE). Atomic force microscopy (AFM) measurements showed that the most reproducible dot pattern was obtained with 5 monolayers of InAs grown at 450 C. The lattice mismatch between InAs and In0.69GaAs is only 2.1%, compared to 3.2% between InAs and In0.53GaAs. The smaller mismatch results in lower strain, making dot formation somewhat more complicated, resulting in quantum dashes, rather than well defined quantum dots in the lattice-mismatched case. We have fabricated 0.6 eV InGaAs planer TPV cells with and without the quantum dashes