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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 739 records · Page 41
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Soft Lattice and Defect Covalency Rationalize Tolerance of β‐CsPbI 3 Perovskite Solar Cells to Native Defects

Abstract Although all‐inorganic metal halide perovskites (MHPs) have shown tremendous improvement, they are still inferior to the hybrid organic–inorganic MHPs in efficiency. Recently, a conceptually new β‐CsPbI 3 perovskite reached 18.4 % efficiency combined with good thermodynamic stability at ambient conditions. We use ab initio non‐adiabatic molecular dynamics to show that native point defects in β‐CsPbI 3 are generally benign for nonradiative charge recombination, regardless of whether they introduce shallow or deep trap states. These results indicate that MHPs do not follow the simple models used to explain defect‐mediated charge recombination in the conventional semiconductors. The strong tolerance is due to the softness of the perovskite lattice, which permits separation of electrons and holes upon defect formation, and only allows carriers to couple to the low‐frequency vibrations. Both factors decrease notably the non‐adiabatic coupling and slow down the dissipation of energy to heat.

Chu, Weibin↗
DOE OSTI2020

Substrate-Dependent Exciton Diffusion and Annihilation in Chemically Treated MoS 2 and WS 2

Atomically thin semiconductors such as monolayer MoS 2 and WS 2 exhibit nonlinear exciton–exciton annihilation at notably low excitation densities (below ~10 excitons/μm 2 in exfoliated MoS 2 ). In this work, we show that the density threshold at which annihilation occurs can be tuned by changing the underlying substrate. When the supporting substrate is changed from SiO 2 to Al 2 O 3 or SrTiO 3 , the rate constant for second-order exciton–exciton annihilation, k XX [cm 2 /s], is reduced by 1 or 2 orders of magnitude, respectively. Using transient photoluminescence microscopy, we measure the effective room-temperature exciton diffusion coefficient in bis(trifluoromethane)sulfonimide-treated MoS 2 to be in the range D = 0.03–0.06 cm 2 /s, corresponding to a diffusion length of L D = 350 nm for an exciton lifetime of τ = 18 ns, which does not depend strongly on the substrate. We discuss possible mechanisms for the observed behavior, including substrate permittivity, long-range exciton–exciton or exciton–charge interactions, defect-mediated Auger recombination, and spatially inhomogeneous exciton populations arising from substrate-induced disorder. Exciton annihilation limits the overall efficiency of 2D semiconductor devices operating at high exciton densities; the ability to tune these interactions via the underlying substrate is an important step toward more efficient optoelectronic technologies featuring atomically thin materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Sandia National Laboratories FY20 Progress Report

The Energetic Neutrons campaign led by Sandia National Laboratories (SNL) had a successful year testing electronic devices and printed circuit boards (PCBs) under 14 MeV neutron irradiation at OMEGA. During FY20 the Energetic Neutrons campaign increased the number and complexity of experiments, continued collaborations with external organizations, and generated knowledge that supports SNL’s National Security mission. In FY20 the Energetic Neutrons campaign was executed by an early career team led by a new PI. The SNL team members were trained to take over new responsibilities during the shot day to increase the number and complexity of experiments in the campaigns. Also, in FY20 for the first time the Energetic Neutrons campaign had a graduate student contributing with pre and post-irradiation characterizations at SNL of the semiconductor devices irradiated at OMEGA. In FY20 SNL collaborated with the Air Force Nuclear Weapons Center (AFNWC) and supported experiments related to radiation effects in semiconductor devices. SNL also gave the opportunity to ride along to Los Alamos National Laboratory and multiple scientists from MIT and LLE. SNL continued using the last two generations of the Neutron Effects Diagnostics (NEDs) to field active and passive experiments but also redesigned the latest generation of the NEDs to accommodate larger components and improve the vacuum sealing as shown in figure 1a. The redesigned NEDs allowed SNL to perform active tests of a high voltage (HV) PCB for the first time at OMEGA; where signals before, during and after the irradiation were recorded. The HV PCB installed in one of the SNL NEDs is shown in figure 1b where a 3D-printed nosecone was used to check for mechanical and electrical interference. Passive irradiations of multiple components were followed up with leakage current, gain measurements and radiation-induced defect characterization.

42 ENGINEERING↗
DOE OSTI2023

Thiol-based defect healing of WSe 2 and WS 2

Recent research on two-dimensional (2D) transition metal dichalcogenides (TMDCs) has led to remarkable discoveries of fundamental phenomena and to device applications with technological potential. Large-scale TMDCs grown by chemical vapor deposition (CVD) are now available at continuously improving quality, but native defects and natural degradation in these materials still present significant challenges. Spectral hysteresis in gate-biased photoluminescence (PL) measurements of WSe 2 further revealed long-term trapping issues of charge carriers in intrinsic defect states. To address these issues, we apply here a two-step treatment with organic molecules, demonstrating the “healing” of native defects in CVD-grown WSe 2 and WS 2 by substituting atomic sulfur into chalcogen vacancies. We uncover that the adsorption of thiols provides only partial defect passivation, even for high adsorption quality, and that thiol adsorption is fundamentally limited in eliminating charge traps. However, as soon as the molecular backbone is trimmed and atomic sulfur is released to the crystal, both bonds of the sulfur are recruited to passivate the divalent defect and the semiconductor quality improves drastically. Time-dependent X-ray photoelectron spectroscopy (XPS) is applied here together with other methods for the characterization of defects, their healing, leading energies and occupation. First-principles calculations support a unified picture of the electronic passivation of sulfur-healed WSe 2 and WS 2 . This work provides a simple and efficient method for improving the quality of 2D semiconductors and has the potential to impact device performance even after natural degradation.

36 MATERIALS SCIENCE↗
DOE OSTI2021

New Noncentrosymmetric Tetrel Pnictides Composed of Square‐Planar Gold(I) with Peculiar Bonding

Abstract Three novel isostructural equiatomic gold tetrel pnictides, AuSiAs, AuGeP, and AuGeAs, were synthesized and characterized. These phases crystallize in the noncentrosymmetric (NCS) monoclinic space group Cc (no. 9), featuring square‐planar Au within cis ‐[AuTt 2 Pn 2 ] units (Tt=tetrel, Si, Ge; Pn=pnictogen, P, As). This is in drastic contrast to the structure of previously reported AuSiP, which exhibits typical linear coordination of Au with Si and P. Chemical bonding analysis through the electron localization function suggests covalent two‐center two‐electron Tt−Pn bonds, and three‐center Au−Tt−Au and Au−Pn−Au bonds with 1.6 e − per bond. X‐ray photoelectron spectroscopy studies support the covalent and nonionic nature of Au−Pn and Au−Tt bonds. The title materials were found to be n ‐type narrow‐gap semiconductors or semimetals, with nearly temperature‐independent electrical resistivities and low thermal conductivities. A combination of the semimetallic properties with tunable NCS structure provides opportunities for the development of materials based on gold tetrel pnictides.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Multiplication of freestanding III-V semiconductor membranes from a single wafer by alternating growth with amorphous graphene interlayer

Freestanding single-crystalline III-V compound semiconductors are important building blocks for functional devices due to their high electron mobilities, a wide range of bandgaps, and excellent optoelectronic properties. Despite efforts to produce such membranes by detaching epitaxial layers from donor wafers, current methods suffer from either slow processes or poor material quality. Here, we demonstrate a technique to grow and harvest multiple epitaxial membranes with extremely high throughput at the wafer scale. For this, a process to directly grow amorphous graphene on III-V substrates in metal-organic chemical vapor deposition reactors is developed, which enables an advanced remote epitaxy scheme comprised of multiple alternating layers of amorphous graphene and III-V epitaxial layers that can be formed by a single epitaxy run. Each epilayer in the multi-stack structure is then harvested by layer-by-layer peeling, producing multiple freestanding membranes with unprecedented throughput from a single wafer. Because amorphous graphene provides a weak van der Waals interface that allows peeling at the interface without damaging the epilayer or the substrate, wafers can be reused for subsequent membrane production. Therefore, this work represents a meaningful step toward high-throughput and low-cost production of single-crystal membranes that can be heterointegrated.

Han, Ne Myo↗
DOE OSTI2022

Multiplication of freestanding III-V semiconductor membranes from a single wafer by alternating growth with amorphous graphene interlayer

Freestanding single-crystalline III-V compound semiconductors are important building blocks for functional devices due to their high electron mobilities, a wide range of bandgaps, and excellent optoelectronic properties. Despite efforts to produce such membranes by detaching epitaxial layers from donor wafers, current methods suffer from either slow processes or poor material quality. Here, we demonstrate a technique to grow and harvest multiple epitaxial membranes with extremely high throughput at the wafer scale. For this, a process to directly grow amorphous graphene on III-V substrates in metal-organic chemical vapor deposition reactors is developed, which enables an advanced remote epitaxy scheme comprised of multiple alternating layers of amorphous graphene and III-V epitaxial layers that can be formed by a single epitaxy run. Each epilayer in the multi-stack structure is then harvested by layer-by-layer peeling, producing multiple freestanding membranes with unprecedented throughput from a single wafer. Because amorphous graphene provides a weak van der Waals interface that allows peeling at the interface without damaging the epilayer or the substrate, wafers can be reused for subsequent membrane production. Therefore, this work represents a meaningful step toward high-throughput and low-cost production of single-crystal membranes that can be heterointegrated.

Han, Ne Myo↗
DOE OSTI2023

The Crystal Structure of BaZn 2 Se 2 (OH) 2 Featuring Brownmillerite‐Type Layers

Abstract A bimetallic hydroxychalcogenide, BaZn 2 Se 2 (OH) 2 , was synthesized through hydrothermal pouch methods. The single crystal X‐ray diffraction and electron diffraction indicates that the phase crystallizes in the orthorhombic space group Pnma and is composed of anionic layers [ZnSe 3/3 (OH) 1/1 ] − that are separated and charged balanced by Ba 2+ cations. The [ZnSe 3/3 (OH) 1/1 ] – layer comprises two unique Zn sites, which form interpenetrating zigzag chains with an in‐plane dipole moment and adopts a brownmillerite‐type structural motif. The adjacent layers contain tetrahedrally coordinated Zn chains of opposite handedness related by an inversion center, which cancel the microscopic dipoles to minimize the macroscopic electric polarization. The adoption of a brownmillerite structural motif in BaZn 2 Se 2 (OH) 2 can be rationalized by the distinct charge difference between Se 2− and OH − anions, which creates a sufficient dipole moment in the ZnSe 3 (OH) tetrahedra to allow the occurrence of twisted chains. FTIR spectroscopy confirms the existence of OH − anions and DFT calculations indicate that BaZn 2 Se 2 (OH) 2 is a semiconductor with a direct band gap. This work expands the chemistry of the brownmillerite family from traditional homoanionic oxides to multianion hydroxychalcogenides, offering a new opportunity to explore tunable structural complexity for better design of functional materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Synthesis of 2D layered transition metal (Ni, Co) hydroxides via edge-on condensation

Abstract Layered transition metal hydroxides (LTMHs) with transition metal centers sandwiched between layers of coordinating hydroxide anions have attracted considerable interest for their potential in developing clean energy sources and storage technologies. However, two-dimensional (2D) LTMHs remain largely understudied in terms of physical properties and applications in electronic devices. Here, for the first time we report > 20 μm α-Ni(OH) 2 2D crystals, synthesized from hydrothermal reaction. And an edge-on condensation mechanism assisted with the crystal field geometry is proposed to understand the 2D intra-planar growth of the crystals, which is also testified through series of systematic comparative studies. We also report the successful synthesis of 2D Co(OH) 2 crystals (> 40 μm) with more irregular shape due to the slightly distorted octahedral geometry of the crystal field. Moreover, the detailed structural characterization of synthesized α-Ni(OH) 2 are performed. The optical band gap energy is extrapolated as 2.54 eV from optical absorption measurements and the electronic bandgap is measured as 2.52 eV from reflected electrons energy loss spectroscopy (REELS). We further demonstrate its potential as a wide bandgap (WBG) semiconductor for high voltage operation in 2D electronics with a high breakdown strength, 4.77 MV/cm with 4.9 nm thickness. The successful realization of the 2D LTMHs opens the door for future exploration of more fundamental physical properties and device applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Supramolecular assembly of blue and green halide perovskites with near-unity photoluminescence

The metal-halide ionic octahedron is the optoelectronic unit for halide perovskites, and a crown ether–assisted supramolecular assembly approach can pack various ionic octahedra into tunable symmetries. In this work, we demonstrate near-unity photoluminescence quantum yield (PLQY) blue and green emission with the supramolecular assembly of hafnium (Hf) and zirconium (Zr) halide octahedral clusters. (18C6@K) 2 HfBr 6 powders showed blue emission with a near-unity PLQY (96.2%), and green emission was also achieved with (18C6@K) 2 ZrCl 4 Br 2 powders at a PLQY of 82.7%. In conclusion, these highly emissive powders feature facile low-temperature solution-based synthesis conditions and maintain high PLQY in solution-processable semiconductor inks under ambient conditions, and they were used in thin-film displays and emissive three-dimensional–printed architectures that exhibited high spatial resolution.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Design optimization of MAPS-based detectors using a data-driven fast simulation approach

A parametric simulation tool for pixel sensors is presented. A realistic pixel response is simulated purely based on measurement input, without requiring detailed knowledge of the underlying manufacturing process. As such, it provides an efficient alternative to the use of Technology Computer-Aided Design simulations, which typically depend on proprietary process information. Due to its parametric approach, the package is fast and thus particularly useful for larger detector systems and high hit rate environments. This work presents measurements, simulation and its validation for the MALTA2 sensor. It is a small collection electrode monolithic active pixel sensor produced in the Tower 180 nm complementary metal-oxide-semiconductor imaging process. Modifications to the sensor’s periphery, mainly in the hit merger, are studied in order to optimize the performance for tracking and calorimetry. This optimization is of special interest as part of the MALTA3 sensor redesign in the 65 nm Tower Partners Semiconductor Co. process.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
NASA NTRS2003

Electronic Components and Circuits for Extreme Temperature Environments

Planetary exploration missions and deep space probes require electrical power management and control systems that are capable of efficient and reliable operation in very low temperature environments. Presently, spacecraft operating in the cold environment of deep space carry a large number of radioisotope heating units in order to maintain the surrounding temperature of the on-board electronics at approximately 20 C. Electronics capable of operation at cryogenic temperatures will not only tolerate the hostile environment of deep space but also reduce system size and weight by eliminating or reducing the radioisotope heating units and their associate structures; thereby reducing system development as well as launch costs. In addition, power electronic circuits designed for operation at low temperatures are expected to result in more efficient systems than those at room temperature. This improvement results from better behavior and tolerance in the electrical and thermal properties of semiconductor and dielectric materials at low temperatures. The Low Temperature Electronics Program at the NASA Glenn Research Center focuses on research and development of electrical components, circuits, and systems suitable for applications in the aerospace environment and deep space exploration missions. Research is being conducted on devices and systems for reliable use down to cryogenic temperatures. Some of the commercial-off-the-shelf as well as developed components that are being characterized include switching devices, resistors, magnetics, and capacitors. Semiconductor devices and integrated circuits including digital-to-analog and analog-to-digital converters, DC/DC converters, operational amplifiers, and oscillators are also being investigated for potential use in low temperature applications. An overview of the NASA Glenn Research Center Low Temperature Electronic Program will be presented in this paper. A description of the low temperature test facilities along with selected data obtained through in-house component and circuit testing will also be discussed. Ongoing research activities that are being performed in collaboration with various organizations will also be presented.

Patterson, Richard L.↗
DOE OSTI2022

Impact of Molecular Design on Degradation Lifetimes of Degradable Imine-Based Semiconducting Polymers

Transient electronics are a rapidly emerging field due to their potential applications in the environment and human health. Recently, a few studies have incorporated acid-labile imine bonds into polymer semiconductors to impart transience; however, understanding of the structure–degradation property relationships of these polymers is limited. In this work, we systematically design and characterize a series of fully degradable diketopyrrolopyrrole-based polymers with engineered sidechains to investigate the impact of several molecular design parameters on the degradation lifetimes of these polymers. By monitoring degradation kinetics via ultraviolet–visible spectroscopy, we reveal that polymer degradation in solution is aggregation-dependent based on the branching point and M n , with accelerated degradation rates facilitated by decreasing aggregation. Additionally, increasing the hydrophilicity of the polymers promotes water diffusion and therefore acid hydrolysis of the imine bonds along the polymer backbone. The aggregation properties and degradation lifetimes of these polymers rely heavily on solvent, with polymers in chlorobenzene taking six times as long to degrade as in chloroform. We develop a new method for quantifying the degradation of polymers in the thin film and observe that similar factors and considerations (e.g., interchain order, crystallite size, and hydrophilicity) used for designing high-performance semiconductors impact the degradation of imine-based polymer semiconductors. We found that terpolymerization serves as an attractive approach for achieving degradable semiconductors with both good charge transport and tuned degradation properties. This study provides crucial principles for the molecular design of degradable semiconducting polymers, and we anticipate that these findings will expedite progress toward transient electronics with controlled lifetimes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

A Robust Neural Network for Extracting Dynamics from Electrostatic Force Microscopy Data

Advances in scanning probe microscopy (SPM) methods such as time-resolved electrostatic force microscopy (trEFM) now permit the mapping of fast local dynamic processes with high resolution in both space and time, but such methods can be time-consuming to analyze and calibrate. Here, we design and train a regression neural network (NN) that accelerates and simplifies the extraction of local dynamics from SPM data directly in a cantilever-independent manner, allowing the network to process data taken with different cantilevers. We validate the NN’s ability to recover local dynamics with a fidelity equal to or surpassing conventional, more time-consuming, calibrations using both simulated and real microscopy data. We apply this method to extract accurate photoinduced carrier dynamics on n = 1 butylammonium lead iodide, a halide perovskite semiconductor film that is of interest for applications in both solar photovoltaics and quantum light sources. Lastly, we use SHapley Additive exPlanations to evaluate the robustness of the trained model, confirm its cantilever-independence, and explore which parts of the trEFM signal are important to the network.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Realization of an Ideal Cairo Tessellation in Nickel Diazenide NiN 2 : High-Pressure Route to Pentagonal 2D Materials

Most of the studied two-dimensional (2D) materials are based on highly symmetric hexagonal structural motifs. In contrast, lower-symmetry structures may have exciting anisotropic properties leading to various applications in nanoelectronics. In this work we report the synthesis of nickel diazenide NiN 2 which possesses atomic-thick layers comprised of Ni 2 N 3 pentagons forming Cairo-type tessellation. The layers of NiN 2 are weakly bonded with the calculated exfoliation energy of 0.72 J/m 2 , which is just slightly larger than that of graphene. The compound crystallizes in the space group of the ideal Cairo tiling (P4/mbm) and possesses significant anisotropy of elastic properties. The single-layer NiN 2 is a direct-band-gap semiconductor, while the bulk material is metallic. Furthermore, this indicates the promise of NiN 2 to be a precursor of a pentagonal 2D material with a tunable direct band gap.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Calibration of a compact ASIC-based data acquisition system for neutron/$γ$ discrimination and spectroscopy with organic scintillators

Segmented neutron detectors that use silicon photomultipliers (SiPMs) are receiving significant attention in nuclear security applications. Some of these detectors employ hundreds of channels and would therefore benefit from the use of high-channel-density and low-cost-per-channel data acquisition (DAQ) systems. Candidate DAQ systems that meet these requirements exist, but few perform full waveform digitization, which permits neutron and gamma-ray interaction discrimination via pulse shape. In this work, we study the performance of the TOFPET2 (PETsys Electronics), an ASIC-based DAQ designed for positron emission tomography, which has been adapted to provide sensitivity to pulse shape by the use of variable-period charge integration. We use a light-emitting diode to calibrate a combination of an ON Semiconductor (SensL) 60035-64P J-Series SiPM and TOPFET2 DAQ and evaluate the linearity of their response and dynamic range. Here, the calibration curve was obtained by comparing the DAQ response to that measured with a photodiode interfaced with a traditional waveform digitizer. This calibration process was used for rudimentary spectroscopy of various neutron and sources.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS2019

High Performance GaN/AlGaN Ultraviolet Avalanche Photodiode Detector Technologies

Detection of ultraviolet (UV) bands provides distinct advantages for NASA, defense, and commercial applications, including increased spatial resolution, small pixel sizes, and large format arrays. AlxGa1-xN semiconductor alloys have attracted great interest for detection in the UV spectral region because of their potential for high optical gain, high sensitivity, and low dark current performance in ultraviolet avalanche photodiodes (UV-APDs). We are developing GaN/AlGaN UV-APDs that demonstrate consistent and reliable UV-APD performance and operation. For these UV detectors we have measured gains of above 5×10(exp 6) and high quantum efficiencies at ~350 nm enabled by a strong avalanche multiplication process. These UV-APDs are fabricated through high quality metal organic chemical vapor deposition (MOCVD) growth on lattice-matched, low dislocation density GaN substrates with optimized GaN/AlGaN UV-APD material growth and doping parameters. The high performance, variable-area GaN/AlGaN UV-APD detectors and arrays can be customized to a wide variety of sizes including large-area formats to enable sensing and high-resolution detection over UV bands of interest.

Sood, Ashok K.↗