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Oxides having a composition of (Ba(1-x)Sr(x))O-Al2O3-2SiO2 are used as sintering aids for producing an improved silicon nitride ceramic material. The x must be greater than 0 to insure the formation of the stable monoclinic celsian glass phase.
An attempt has been made to understand the mechanisms of radiation induced degradation by using different types of hot carrier (HC) stressing experiments. The degradation of re-oxidized nitrided oxide gate dielectric due to irradiation and hot carriers are reported. The effect of electron and hole traps of the virgin device on radiation induced threshold voltage shift is discussed.
Ellipsometry, which is the study of optical systems through their effect on polarized light, is a nondestructive technique offering extremely high sensitivity and in situ operation. One of the intriguing possibilities is to make use of the high sensitivity of ellipsometry for studying the very thin interface between an insulating film and a semiconductor substrate. Researchers have been especially interested in native or anodic oxides. In a recent study, Aspnes and Theeten used ellipsometry to study the interface between silicon and its thermally grown oxide, SiO2. These authors were able to conclude that the interface consisted of a 7 +/- 2 A graded region of atomically mixed silicon and oxygen. In this paper we report both analysis and experimental results for the system: sputtered silicon nitride on (100) n-type gallium arsenide.
Silicon nitride Si3N4, has previously been observed to be a common constituent of acid residues of Qingzhen (EH3) and Indarch (EH4). Ion probe analysis of the Si, N and C isotopic compositions of individual Si3N4 grains from Qingzhen and Indarch acid residues suggest most, if not all, grains are Solar System in origin. A few grains have isotopically anomalous C but this is probably due to small presolar SiC grains adhering to them. In situ observations of the Si3N4 in Qingzhen show that it is only present within, and probably exsolved from, host phases which contain elemental Si in solid solution. Thermodynamic calculations suggest that the Si3N4 probably formed during metamorphism and not in the nebula. Thermodynamic calculations also show that sinoite (Si2N2O) and not Si3N4 should be the stable phase during metamorphism. It appears that kinetic factors must have inhibited the formation if sinoite in Qimgzhen and Indarch.
Report summarizes results of four years of research directed toward increasing strength and reliability of injection-molded silicon nitride parts for advanced heat engines.
Recent work on the friction and wear properties of as-deposited fine-grain diamond, polished coarse-grain diamond, and as-deposited diamondlike carbon (DLC) films in humid air at a relative humidity of approximately 40 percent and in dry nitrogen is reviewed. Two types of chemical vapor deposition (CVD) processes are used to deposit diamond films on silicon nitride (Si3N4) substrates: microwave-plasma and hot-filament. Ion beams are used to deposit DLC films of Si3N4 substrates. The diamond and DLC films in sliding contact with hemispherical bare Si3N4 pins have low steady-state coefficients of friction (less than 0.2) and low wear rates (less than 10(exp -7) mm(exp 2)/N-m), and thus, can be used effectively as wear-resistant, self-lubricating coatings for Si3N4 in the aforementioned two environments.
The fracture toughness of a commercial, hot-pressed, in situ-toughened silicon nitride with an elongated grain structure is determined by four different testing methods. The fracture toughness is found to be 5.76 +/- 0.27, 8.48 +/- 0.50, 10.16 +/- 0.66, and 10.68 +/- 0.39 MPa x m(exp 1/2), respectively, by indentation crack size measurement, indentation strength, single-edge-precracked-beam, and chevron-notched-beam methods. The discrepancy in fracture toughness between the testing methods is related to R-curve behavior, as measured using the indentation strength technique. These results indicate that there is no unique fracture toughness value and that a fracture toughness testing method with appropriate qualifiers is needed for rising R-curve materials. Therefore, care should be taken in interpreting and utilizing fracture toughness values evaluated from different testing methods if a material exhibits a rising R-curve. Complete characterization of the R-curve may be a prerequisite.
The experimental results of thermal shock testing of silicon nitride flexure beam specimens containing indentation cracks are presented. The thermal stress induced by water quenching is much greater in the transverse direction than in the longitudinal direction, resulting in an insensitivity of residual bend strength to temperature differences up to 580 C. This result indicates that a flexure beam configuration is not an appropriate geometry for thermal shock testing when thermal shock behavior is to be evaluated from residual bend strength data.
Oxidation kinetics of both as-fabricated and coated reaction-bonded silicon nitride (RBSN) were studied at 900 and 1000 C with thermogravimetry. Uncoated RBSN exhibited internal oxidation and parabolic kinetics. An amorphous Si-C-O coating provided the greatest degree of protection to oxygen, with a small linear weight loss observed. Linear weight gains were measured on samples with an amorphous Si-N-C coating. Chemically vapor deposited (CVD) Si3N4 coated RBSN exhibited parabolic kinetics, and the coating cracked severely. A continuous-SiC-fiber-reinforced RBSN composite was also coated with the Si-C-O material, but no substantial oxidation protection was observed.
An advanced computational model is being developed to predict the formation of indium nitride (InN) film from the reaction of trimethylindium (In(CH3)3) with ammonia (NH3). The components are introduced into the reactor in the gas phase within a background of molecular nitrogen (N2). Organometallic chemical vapor deposition occurs on a heated sapphire surface. The model simulates heat and mass transport with gas and surface chemistry under steady state and pulsed conditions. The development and validation of an accurate model for the interactions between the diffusion of gas phase species and surface kinetics is essential to enable the regulation of the process in order to produce a low defect material. The validation of the model will be performed in concert with a NASA-North Carolina State University project.
Stacks of curved leaves of pyrolytic boron nitride (PBN) were deflected and the force versus deflection data was recorded. From this data, the spring constant for a given spring geometry (radius of curvature of a leaf, width of a leaf, thickness of a leaf, and number of leaves in the stack) was determined. These experiments were performed at room temperature, 500 C and 1000 C. However, temperature was not found to affect the spring constant. The measured values were generally within one order of magnitude of predictions made using a previously derived equation for a simply supported cylindrical section with a line force at the center.
This document is a presentation about the investigation of drift reported in static frequency output from the analog circuit of a Multichannel Microwave Integrated circuit hybrid microelectronic filter module for space flight application. Electron Dispersion X-Ray Detector )EDAX) Analysis of the 35k ohm thin film Tantalum Nitride Chip resistors identified Palladium in the film. A catalytic reaction of Palladium and hydrogen produces mono atomic hydrogen. When the filter module cavities were filled with a 4 % hydrogen 96 % Nitrogen gas mixture at 25C and monitored the electrical performance for 24 hours. Some channels drifted in a similar pattern as the channel being investigated. Palladium was found on the resistors. The corrective actions taken are reviewed, which resulted in a stable circuit.
In this paper we report on observations of degradation of thin film Tantalum Nitride chip resistors in a hermetically sealed hybrid. The observations have been attributed to the reaction of residual Palladium with desorbed Hydrogen on the surface of the resistor film. Hydrogen gas has been observed to desorb from various sources within the sealed hybrid as a result of temperature elevation. The hydrogen gas has been reported to undergo a reaction with elements such as Platinum and Palladium causing device degradation in Gallium Arsenide Field Effect Transistors. The experimental procedures and data relating to this observation along with a discussion of available risk mitigation techniques will be presented.
Micromechanical spectroscopy of aluminum nitride reveals it to possess extremely low background internal friction at less than 1x10(exp-4) logarithmic decrement (log dec) from 20 to 1200 T. Two mechanical loss peaks were observed, the first at 350 C approximating a single Debye peak with a peak height of 60x10(exp-4) log dec. The second peak was seen at 950 'C with a peak height of 20x 10' log dec and extended from 200 to over 1200 C. These micromechanical observations manifested themselves in the electrical behavior of these materials. Electrical conduction processes were predominately intrinsic. Both mechanical and electrical relaxations appear to be thermally activated processes, with activation energies of 0.78 and 1.32 eV respectively.
Extensive creep testing of a hot-pressed silicon nitride (NC 132) was performed at 1300 C in air using five different specimen-loading configurations: (1) pure tension, (2) pure compression, (3) four-point uniaxial flexure, (4) ball-on-ring biaxial flexure, and (5) ring-on-ring biaxial flexure. This paper reports experimental results as well as test techniques developed in this work. Nominal creep strain and its rate for a given nominal applied stress were greatest in tension, least in compression, and intermediate in uniaxial and biaxial flexure. Except for the case of compression loading, nominal creep strain generally decreased with time, resulting in a less-defined steady-state condition. Of the four creep formulations-power-law, hyperbolic sine, step, and redistribution--the conventional power-law formulation still provides the most convenient and reasonable estimation of the creep parameters of the NC 132 material. The data base to be obtained will be used to validate the NASA Glenn-developed design code CARES/Creep (ceramics analysis and reliability evaluation of structures and creep).
Micromechanical spectroscopy of aluminum nitride reveals it to possess extremely low background internal friction at less than 1 x 10 (exp -4) logarithmic decrement (log dec.) from 20 to 1200 C. Two mechanical loss peaks were observed, the first at 350 C approximating a single Debye peak with a peak height of 60 x 10 (exp -4) log dec. The second peak was seen at 950 C with a peak height of 20 x 10 (exp -4) log dec. and extended from 200 to over 1200 C. These micromechanical observations manifested themselves in the electrical behavior of these materials. Electrical conduction processes were predominately intrinsic. Both mechanical and electrical relaxations appear to be thermally activated processes, with activation energies of 0.78 and 1.32 eV respectively.
The slow crack growth parameters of a hot-pressed silicon nitride were determined at 1200 and 1300 C in air by statically, dynamically and cyclicly loading bend specimens. The fatigue parameters were estimated using the recently developed CARES/Life computer code. Good agreement exists between the flexural results. However, fatigue susceptibility under static uniaxial tensile loading, reported elsewhere, was greater than in flexure. Cyclic flexural loading resulted in the lowest apparent flexural fatigue susceptibility.
Due to its combined properties of high electrical resistivity and high thermal conductivity aluminum nitride (AlN) is a highly desirable material for electronics applications. Methods are being sought for synthesis of unagglomerated, nanometer-sized powders of this material, prepared in such a way that they can be consolidated into solid compacts having minimal oxygen content. A procedure for synthesizing these powders through gas-phase combustion is described. This novel approach involves reacting AlCl3, NH3, and Na vapors. Equilibrium thermodynamic calculations show that 100% yields can be obtained for these reactants with the products being AlN, NaCl, and H2. The NaCl by-product is used to coat the AlN particles in situ. The coating allows for control of AlN agglomeration and protects the powders from hydrolysis during post-flame handling. On the basis of thermodynamic and kinetic considerations, two different approaches were employed to produce the powder, in co-flow diffusion flame configurations. In the first approach, the three reactants were supplied in separate streams. In the second, the AlCl3 and NH3 were premixed with HCl and then reacted with Na vapor. X-ray diffraction (XRD) spectra of as-produced powders show only NaCl for the first case and NaCl and AlN for the second. After annealing at 775 C tinder dynamic vacuum, the salt was removed and XRD spectra of powders from both approaches show only AlN. Aluminum metal was also produced in the co-flow flame by reacting AlCl3 with Na. XRD spectra of as-produced powders show the products to be only NaCl and elemental aluminum.