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At least 739 records · Page 41

Saltation on Mars and expected lifetime of Viking 75 wind sensors

With the use of the wind-tunnel measurements of Bagnold and Zingg, a model is developed for estimating the parameters that describe the flux of sand on Mars. Application of this model to the sensor-breakage problem indicates that the expected lifetime on Mars of the wind sensors of the Viking 75 Meteorology Instrument System is about 40 earth years. This expected lifetime is adequate for both the primary Viking 75 mission and for a proposed extended mission.

Henry, R. M.↗

Charge exchange lifetimes for ions in the magnetosphere

Latest and best measurements of physical quantities involved in complete calculation of the charge exchange lifetime of mirroring magnetospheric ions are coalesced and summarized. It is critical that the charge exchange lifetimes for ions be known as accurately as possible in order to apply the charge exchange mechanism to ion phenomena within the earth's magnetosphere.

Smith, P. H.↗

Comment on lifetime determination of solar features

A commonly used technique for determining the lifetime of solar features consists of tagging the features on a photograph contained in a time-ordered set of photographs and tracing the features back to birth and forward to disappearance. The modification of this technique proposed in the present paper consists of a certain modification of the method used for interpreting the data. Suggestions for practical implementation of the method are made, and a serious source of bias in lifetime determination from time-ordered data is discussed.

Golub, L.↗

A methodology for experimentally based determination of gap shrinkage and effective lifetimes in the emitter and base of p-n junction solar cells and other p-n junction devices

An experimentally based methodology that determines the effective gap shrinkage and lifetime in the emitter of a p-n junction solar cell is described which provides an experimental means for assessing the importance of gap shrinkage relative to that of large recombination rates in the highly doped emitter. The base lifetime is also determined. The methodology pertains to a solar cell after the junction is formed, so that each material parameter determined includes the effects of the processing used in junction fabrication. The methodology consists of strategy and procedures for designing experiments and interpreting data consistently with the physical mechanisms governing device behavior. This careful linking to the device physics uncover the material parameters concealed in the data. To illustrate the procedures, they are applied to an n(+)-p solar cell having substrate resistivity of about 0.1 ohm-cm.

Lindholm, F. A.↗

Determination of minority-carrier lifetime and surface recombination velocity with high spacial resolution

Quantitative analysis of the electron beam induced current in conjunction with high-resolution scanning makes it possible to evaluate the minority-carrier lifetime three dimensionally in the bulk and the surface recombination velocity two dimensionally, with a high spacial resolution. The analysis is based on the concept of the effective excitation strength of the carriers which takes into consideration all possible recombination sources. Two-dimensional mapping of the surface recombination velocity of phosphorus-diffused silicon diodes is presented as well as a three-dimensional mapping of the changes in the minority-carrier lifetime in ion-implanted silicon.

Watanabe, M.↗

Method and apparatus for measuring minority carrier lifetimes and bulk diffusion length in P-N junction solar cells

Carrier lifetimes and bulk diffusion length are qualitatively measured as a means for qualification of a P-N junction photovoltaic solar cell. High frequency (blue) monochromatic light pulses and low-frequency (red) monochromatic light pulses were alternately applied to the cell while it was irradiated by light from a solar simulator, and synchronously displaying the derivative of the output voltage of the cell on an oscilloscope. The output voltage is a measure of the lifetimes of the minority carriers (holes) in the diffused N layer and majority carriers (electrons) in the bulk P material, and of the diffusion length of the bulk silicon. By connecting a reference cell in this manner with a test cell to be tested in reverse parallel, the display of a test cell that matches the reference cell will be a substantially zero output.

Vonroos, O. H.↗

Capacitance transients in p-type GaAs MOS structures and application to lifetime mapping during solar cell fabrication

Fabrication on p-type GaAs of MOS structures in which the quality of the oxide is such that the surface can be driven into deep inversion by a voltage pulse is reported. The capacitance transients in such MOS capacitors as a function of step amplitude and temperature were measured and the transients were analyzed by an extension of a method for silicon. The oxides were produced by plasma oxidation on an LPE-grown p-type GaAs specimen with N sub A of 3x10 to the 17th power/cu cm. The capacitors were produced by depositing 50 microns-diameter gold dots over the native oxide and, therefore, the lifetime is localized to the area under the dot. The method permits extraction of both the bulk lifetime and the interface recombination velocity. These parameters on samples with different N sub A were measured and a correlation between tau sub g and N sub A was found.

Vitale, G.↗

Forward-bias capacitance and current measurements for determining lifetimes and band narrowing in p-n junction solar cells

A new method is described and illustrated for determining the minority-carrier diffusion length and lifetime in the base region of p-n junction solar cells. The method requires only capacitance measurements at the device terminals and its accuracy is estimated to be + or - 5%. It is applied to a set of silicon p-n junction devices and the values of the diffusion lengths agree with those obtained using the current response to X-ray excitation but disagree with those obtained by the OCVD method. The reasons for the relative inaccuracy of OCVD applied to silicon devices are discussed. The capacitance method includes corrections for a two-dimensional fringing effects which occur in small area devices. For a device having highly-doped base region and surface (emitter) layer, the method can be extended to enable the determination of material properties of the degenerately doped surface layer. These material properties include the phenomenological emitter lifetime and a measure of the energy band-gap narrowing in the emitter. An alternate method for determining the energy band-gap narrowing from temperature dependence of emitter current is discussed and demonstrated.

Neugroschel, A.↗

Lifetime Cost and Performance model for photovoltaic power systems

This paper describes the approach and procedures of the Lifetime Cost and Performance (LCP) model for photovoltaic power systems. The LCP model is designed to evaluate the impact of alternative initial design and recurrent policy decisions on both cost and power output over the lifetime of a photovoltaic power plant. LCP is, therefore, useful to system designers and operators for addressing questions relating to optimal system configuration, installation activities, level of effort and timing of operations/maintenance actions, allowable degradation and replacement options.

Borden, C. S.↗

Moisture determination in composite materials using positron lifetime techniques

A technique was developed which has the potential of providing information on the moisture content as well as its depth in the specimen. This technique was based on the dependence of positron lifetime on the moisture content of the composite specimen. The positron lifetime technique of moisture determination and the results of the initial studies are described.

Singh, J. J.↗

A study of the lifetimes of geosynchronous transfer orbits

The study concerns the orbit lifetimes of spent upper stages that are used to boost NASA Space Transportation System payloads into geosynchronous transfer orbits. A semi-analytical method of trajectory computation was developed and applied to these particular orbits. It was found that gravitational perturbations of the sun, moon and oblate earth cause large changes in the perigee altitude. The following parameters have a strong influence on orbit lifetimes: Time of year of launch; Inertial orientation of orbital plane; Inclination of orbital plane.

Graf, O. F., Jr.↗

Astrophysical constraints on the radiative lifetime of neutrinos with mass between 10 and 100 eV/c-squared

Upper limits to astronomical photon backgrounds are used to derive constraints on the radiative lifetime of neutrinos. With the assumption that the radiative decay dominates the decay routes available, comparisons with predicted fluxes exclude radiative lifetimes between 10 to the 13th and 10 to the 22nd-23rd sec for neutrinos which decay to lighter neutrinos and 5-50 eV photons. For a secondary neutrino mass much less than the parent neutrino mass, this photon-energy range corresponds to a parent-neutrino-mass range of 10-100 eV/c-squared.

Kimble, R.↗

Progress on the development of a 3- to 5-year lifetime Stirling cycle refrigerator for space

A new approach to the development of a 3- to 5-year lifetime Stirling cycle refrigerator for space is described. The reciprocating components would be driven directly by linear motors. There would be no contact between the moving components and the machine housing or motor during operation. The noncontact operation can be achieved either by magnetic or gas bearings and clearance seals. Consequently, two major contractual efforts are underway, one to develop the magnetic-bearing cooler and the other to develop the gas-bearing machine. The coolers are required to have a 5-W capability at 65 K and to be dynamically balanced. The results of the major contractor phase 1 design definition studies and component testing are discussed. Both the gas-bearing and magnetic-bearing coolers show promise for achieving the 3- to 5-year lifetime goal.

Sherman, A.↗

Mathematical analysis of the Photovoltage Decay (PVD) method for minority carrier lifetime measurements

When the diffusion length of minority carriers becomes comparable with or larger than the thickness of a p-n junction solar cell, the characteristic decay of the photon-generated voltage results from a mixture of contributions with different time constants. The minority carrier recombination lifetime tau and the time constant l(2)/D, where l is essentially the thickness of the cell and D the minority carrier diffusion length, determine the signal as a function of time. It is shown that for ordinary solar cells (n(+)-p junctions), particularly when the diffusion length L of the minority carriers is larger than the cell thickness l, the excess carrier density decays according to exp (-t/tau-pi(2)Dt/4l(2)), tau being the lifetime. Therefore, tau can be readily determined by the photovoltage decay method once D and L are known.

Vonroos, O. H.↗

Derivation of the collision probability between orbiting objects The lifetimes of Jupiter's outer moons

A general form is derived for Opik's equations relating to the probability of collision between two orbiting objects to their orbital elements, and used to determine the collisional lifetime of the eight outer moons of Jupiter. The derivation is based on a concept of spatial density, or average number of objects found in a unit volume, and results in a set of equations that are easily applied to a variety of orbital collision problems. When applied to the outer satellites, which are all in irregular orbits, the equations predict a relatively long collisional lifetime for the four retrograde moons (about 270 billon years on the average) and a shorter time for the four posigrade moons (0.9 billion years). This short time is suggestive of a past collision history, and may account for the orbiting dust detected by Pioneers 10 and 11.

Kessler, D. J.↗

Do quasars have cosmologically long lifetimes

An alternative explanation to gravitational lensing is examined, by which problems inherent in space density evolution are avoided without invoking gravitational effects. Apparent and unreal density evolution follows as an immediate consequence, if the quasar lifetimes that are the only free parameter in the model proposed are of the order of three billion years. If such lifetimes are the case, while quasars may occur less frequently than has been thought, the local density of quasars may have been grossly underestimated.

Chanan, G. A.↗

Radiative lifetimes and quenching rate coefficients for directly excited rotational levels of OH/A 2Sigma +, v-prime = 0/

A narrow-bandwidth pulsed dye laser was used to excite OH X 2Pi i radicals to the A 2Sigma(+) state by pumping in the (0, 0) vibrational band around 308 nm. The radiative lifetimes of specific (K-prime, J-prime) rotational levels in v-prime = 0 were measured at low pressures (not greater than 1 mtorr), which yielded a mean lifetime of 0.71 + or - 0.009 microsec (2 sigma). Electronic quenching rate constants for N2, O2, H2O, and H2 were measured for a range of initially excited rotational levels. A strong dependence of this rate constant on the initially excited rotational level was found for N2, and less markedly for O2, with the rate constant tending to increase for the lowest rotational levels K-prime not greater than 3. The implications of these results for the laser-induced fluorescence detection of atmospheric OH are discussed.

Mcdermid, I. S.↗

Radiative lifetimes and dipole moments of the A 2Sigma/+/, B 2Sigma /+/, and C 2Sigma/+/ states of OH

After describing independent theoretical studies of the eigenfunctions of the X 2Pi and excited A 2Sigma(+), B 2Sigma(+), and C 2Sigma(+) states of OH, results are presented for the transition dipole moments connecting each excited state to the others and to the ground state. The radiative lifetimes derived from calculation of the bound-bound and bound-free vibrational band transition probabilities are compared with measured values, confirming recent measurements of the A 2Sigma(+) and C 2Sigma(+) states but not the lifetimes measured for the B 2Sigma(+) state.

Langhoff, S. R.↗