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At least 739 records · Page 41
All sourcesNASA NTRSDOE OSTI
DOE OSTI2013

Features of conduction mechanisms in n-HfNiSn semiconductor heavily doped with a Rh acceptor impurity

The crystal structure and electron-density distribution, as well as the energy, kinetic, and magnetic characteristics of n-HfNiSn intermetallic semiconductor heavily doped with a Rh acceptor impurity in the temperature range T = 80-400 K, in the acceptor-concentration range N{sub A}{sup Rh} Almost-Equal-To 9.5 Multiplication-Sign 10{sup 19}-1.9 Multiplication-Sign 10{sup 21} cm{sup -3} (x = 0.005-0.10), and in magnetic fields H {<=} 10 kG are investigated. It is established that doping is accompanied by a simultaneous decrease in concentration, the elimination of donor-type structural defects (to x Almost-Equal-To 0.02), and an increase in the concentration of acceptor-type structural defects (0 < x {<=} 0.10). The dependence of the degree of semiconductor compensation on temperature is revealed. A model of the spatial arrangement of atoms in HfNi{sub 1-x}Rh{sub x}Sn is proposed, and the results of calculating the electron structure based on this model agree with the results of investigations of the kinetic and magnetic characteristics of the semiconductor. The results are discussed within the context of the Shklovskii-Efros model for a heavily doped and compensated semiconductor.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Relaxation kinetics of impurity photoconductivity in p-Si:B with various levels of doping and degrees of compensation in high electric fields

The relaxation of impurity photoconductivity in p-Si:B crystals subjected to pulsed optical excitation by a narrow-band continuously adjusted source of radiation in the range of 'heating' (10-500 V/cm) electric fields is studied. A variation of dependence of the relaxation time on the electric field E at E > 75 V/cm due to the additional relaxation processes with the emission of an optical phonon is observed. The dependence of the rates of carrier relaxation on the intensity and wavelength of the excitation radiation indicates also that there is a long-lived excited state, which plays the role of a metastable trap level upon the relaxation of charge carriers.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Observation of dynamics of impurity photoconductivity in n-GaAs caused by electron cooling

Experimental investigation of the time dependence of impurity photoconductivity in n-GaAs is carried out upon pulsed optical excitation. It is shown that a change in the photoconductivity is determined mainly by electron cooling in the first 20 ns after photoexcitation. A theoretical model for describing the dependences under observation is proposed.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Distribution of elastic strains appearing in gallium arsenide as a result of doping with isovalent impurities of phosphorus and indium

The distribution of elastic strains in a system consisting of a quantum-dot layer and a buried GaAs{sub x}P{sub 1−x} layer is studied using geometric phase analysis. A hypothesis is offered concerning the possibility of controlling the process of the formation of InAs quantum dots in a GaAs matrix using a local isovalent phosphorus impurity.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Influence of the samarium impurity on the structure and surface morphology of Se{sub 95}Te{sub 5} chalcogenide glassy semiconductor

X-ray diffraction and atomic-force microscopy are used to study the structure and surface morphology of Se{sub 95}Te{sub 5} chalcogenide glassy semiconductor films and the influence exerted on these films by doping with samarium. The parameters of the first sharp diffraction peak (FSDP), observed in X-ray diffraction patterns, are used to determine the numerical values of the local structure parameters, such as the “quasiperiod” of density fluctuations, correlation length [size of medium-range-order (MRO) regions], and nanovoid diameters. In addition, the numerical values of the roughness-amplitude parameters are determined. It is found that the disorder in the atomic structure and the irregularities on the surface of the films under study become more pronounced with increasing percentage content of the samarium impurity.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Quantum corrections to the conductivity and anomalous Hall effect in InGaAs quantum wells with a spatially separated Mn impurity

Magnetotransport in heterostructures with spatial separation of the Mn magnetic impurity and an InGaAs quantum well is studied. An analysis of the observed effect of weak localization using the Hikami–Larkin–Nagaoki formula leads to an anomalously small value (0.4) of the prefactor. Obtained data indicate that inelastic e–e scattering can be the dominant dephasing mechanism in the structures under study. Analysis of the conductivity and magnetoresistance indicates the dominant role of spin-dependent scattering at fluctuations in the magnetic subsystem, which is consistent with an increase in the amplitude of the negative magnetoresistance and an increase in the Drude conductivity as a result of cooling. The nature of the anomalous Hall effect in the studied structures is investigated; in particular, indications are obtained that there is the presence of a topological contribution at low temperatures.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Effect of Boron Impurity on the Light-Emitting Properties of Dislocation Structures Formed in Silicon by Si{sup +} Ion Implantation

The effect of boron implantation on the light-emitting properties of dislocation structures formed in silicon by Si{sup +} ion implantation with subsequent annealing is studied. It is shown that the implantation of B{sup +} ions has a significant effect on the dislocation-related luminescence intensity, spectrum and the temperature dependence of the D1-band intensity. It is found that the temperature dependence is nonmonotonous and involves two regions, in which the D1-band intensity increases with increasing temperature and has two well-pronounced maxima at 20 K and 60–70 K. The maximum at 20 K is associated with the morphological features of the dislocation structure under study, whereas the maximum at 60–70 K is associated with the additional implantation of the boron impurity into the dislocation region of the samples. It is established that the intensities of the experimentally observed maxima and the position of the high-temperature maximum depend on the implanted boron concentration.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Calculation of Multiply Charged States of Impurity-Defect Centers in Epitaxial Hg{sub 1–x}Cd{sub x}Te Layers

A method for calculating the states of multivalent donors and acceptors in Hg{sub 1–x}Cd{sub x}Te materials is developed. The ionization energies of deep acceptor and donor centers in epitaxial Hg{sub 1–x}Cd{sub x}Te films are calculated. The calculation method takes into account the influence of both the valence band and the conduction band on the states of impurity-defect centers. The calculations of energies for the levels of tetravalent acceptors and donors associated with crystalline structure defects indicate the intercenter nature of lines observed previously in the photoluminescence spectra of Hg{sub 1–x}Cd{sub x}Te films.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Variation in the State of 19m Sn Impurity Atoms in PbTe during the Establishment of the Radioactive Equilibrium of 119m Te/ 119 Sb Isotopes

The parameters of the emission Mössbauer spectra of PbTe using the 119m Sn daughter isotope with different parent nuclei 119mm Sn, 119 Sb, and 119m Te are compared. This comparison makes it possible to identify impurity tin atoms in both lead-telluride sublattices. It is found that the ratio of tin concentrations in different sublattices depends on the time after source preparation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Differences in the Impurity Ionization in Quasi-Classically Strong Constant and Alternating Electric Fields in a Two-Dimensional Superlattice Based on Graphene

The coefficient of the absorption of an electromagnetic wave in a two-dimensional superlattice based on graphene, in the presence of a constant electric field for the case of quasi-classically strong electric fields is investigated. The anisotropy of the absorption coefficient is revealed at different orientations of the vector of the constant electric field and the vector of polarization of the alternating electric field. It is demonstrated that the slow increase in the absorption coefficient at low frequencies is caused by impurity absorption, and its faster increase at higher frequencies is determined by miniband-to-miniband transitions. These peculiar properties can be used for the development of radiation detectors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Evolution of the Impurity Photoconductivity in CdHgTe Epitaxial Films with Temperature

The photoconductivity spectra of epitaxial CdHgTe films are investigated by Fourier-transform spectroscopy at various temperatures. Features associated with both the interband absorption and ionization of impurity/defect states are found in the spectra. Their evolution with temperature is traced. The temperatures of “vanishing” of the impurity features are determined, which makes it possible to assess the acceptor concentration in the structures under study using the electroneutrality equation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Microwave Magnetic Absorption in HgSe with Co and Ni Impurities

Features of magnetic-field-dependent microwave absorption in HgSe samples doped with Co and Ni impurities in different concentrations are investigated. The electron-spin resonance spectra of weakly coupled Co atoms and peculiarities of the magnetic-absorption variation in a magnetic field passing through the zero value are established. The main parameters of the electron-spin resonance spectra and temperature and angular dependences of microwave absorption in weak fields are determined.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Luminescence of impurity Ce{sup 3+} centers in KH{sub 2}PO{sub 4} : Ce crystals

The photoluminescence, X-ray luminescence, and cathodoluminescence spectra of KH{sub 2}PO{sub 4} : Ce single crystals contain a nonelementary band of radiation with an energy of 3.55 eV and decay time of 27–33 ns. It is formed by fast radiative interconfiguration d → f transitions between the excited and ground states of Ce{sup 3+} ions, with the ground state is split by a crystalline field. In the range of concentrations studied (0.5–3 × 10{sup –2} wt %), Ce3+ ions enter the KH{sub 2}PO{sub 4} : Ce crystal lattice as substitution ions. Local charge compensation takes place by means of defects in the crystal structure that cause luminescence with a large Stokes shift in the region of 2.4–2.2 eV. The presence of hydrogen sublattice defects decreases the efficiency of energy transport by free charge carriers to the luminescent centers. The interaction of defects and impurity centers manifests itself as a slow inertial building-up of the stationary X-ray luminescence yield of Ce{sup 3+} centers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

The Effect of Structural Inhomogeneities and Gas-Forming Impurities on the Functional Properties of High Purity Rare-Earth Metals

Rare-earth metals (REM) gadolinium and dysprosium, and also the Gd–H and Dy–H systems in which magnetic order–order and order–disorder phase transitions are accompanied by significant magnetocaloric effect, have been studied. The materials have been prepared in various structural states. It is stated that there is a substantial difference of their functional properties in the dependence on the features of the structural state and also on the existence of a gas-forming impurity. It has been proved experimentally and theoretically that the Curie temperatures of Gd samples with grain sizes of ~200 nm increases as a result of hydrogenation, while the magnetic phase transition temperatures of Dy are almost unchanged Inhomogeneities.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Luminescence of Pr{sup 3+} Impurity Centers and Defects in Sr{sub 9}Sc (PO{sub 4}){sub 7}:Pr{sup 3+}

The spectroscopic characteristics and luminescence decay kinetics of Sr{sub 9}Sc(PO{sub 4}){sub 7}:Pr{sup 3+}(1%) were investigated using synchrotron radiation of ultraviolet (UV), vacuum ultraviolet (VUV) and X-ray ranges, as well as pulsed cathodoluminescence (PCL) methods at temperatures of 10, 90, and 295 K. The luminescence spectra contain three groups of bands and lines. In the UV range, the observed bands correspond to interconfigurational 5d → 4f transitions in Pr{sup 3+} ions. In the visible spectrum, the wide luminescence band of defects dominates, as well as narrow lines associated with intraconfigurational 4f → 4f transitions in Pr{sup 3+} ions. When excited by an electron beam (5 Hz), the main component with a decay time τ ∼ 17 ns dominates in the decay kinetics of the 5d → 4f luminescence. The decay kinetics of 5d → 4f luminescence upon excitation with high-frequency (τ ∼ 8 MHz) synchrotron radiation of the X-ray range contains a fast component (τ ∼ 15 ns) against the background of the slow component of the μs-range. An effective nonradiative energy transfer is observed from impurity centers to defects, as well as from the host to Pr{sup 3+} ions and defects.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Application of High-Frequency Electron Paramagnetic Resonance/Electron Spin Echo for the Identification of the Impurity Composition and Electronic Structure of Ceramics Based Garnets

Electron paramagnetic resonance (EPR) spectra of Ce{sup 3+}, Yb{sup 3+}, Cr{sup 3+}, and Gd{sup 3+} impurity ions in yttrium aluminum garnet Y{sub 3}Al{sub 5}O{sub 12} (YAG) ceramics were detected and identified at frequency of 94 GHz. The advantage of measuring the EPR spectra in the high-frequency range compared to the standard EPR technique is shown, which makes it possible to separate the EPR spectra characterized by different anisotropic g-factors and also to isolate the EPR signals due to the splitting of the fine structure for centers with high-spin states. In ceramics with a high content of magnetic Gd{sup 3+} ions, EPR and electron spin echo (ESE) spectra of multi-ionic gadolinium complexes were observed, and EPR spectra of complexes with the maximum number of exchange-coupled gadolinium ions are seen at low temperatures. The temperature dependences of the EPR spectra indicates ferromagnetic ordering of exchange-coupled complexes of gadolinium.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

IR Spectroscopy for Precision Monitoring of Iron and Chromium Impurity Diffusion Profiles in Zinc Chalcogenides

A technique for precision rapid nondestructive monitoring of the dopant behavior in zinc chalcogenide–based laser media is reported. Results suggest that it is possible to determine the concentration profiles of Fe{sup 2+} and Cr{sup 2+} dopant ions in zinc chalcogenide by IR spectroscopy combined with an IR microscope in the concentration rage 5 × 10{sup 17}–2.5 × 10{sup 20} atoms/cm{sup 3} with a spatial resolution of several micrometers. The diffusion profiles of dopants have been taken for zinc chalcogenide codoped by several impurities.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Multi-species impurity granule injection and mass deposition projections in NSTX-U discharges Authors

By employing a neutral gas shielding (NGS) model to characterize impurity granule injection the pedestal atomic deposition for three different species of granule: lithium, boron, and carbon are determined. Utilizing the duration of ablation events recorded on experiments performed at DIII-D to calibrate the NGS model we are able to quantify the ablation rate and mass deposition location with respect to the plasma density profile. The species specific granule shielding constant is then used to model granule ablation within NSTX-U discharges. Simulations of 300, 500 and 700 micron diameter granules injected at 50 m/sec are presented for NSTX-U L-mode type plasmas as well as H-mode discharges with low natural ELM frequencies. Additionally, ablation calculations of 500 micron granules of each species are presented at velocities ranging from 50 - 150 m/sec. In H-mode type discharges these simulations show that the majority of the injected granule is ablated within or just past the steep gradient region of the discharge. At this radial position, the perturbation to the background plasma generated by the ablating granule can lead to conditions advantageous for the rapid triggering of an ELM crash event.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗