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NASA NTRS1960

DETERMINATION OF EMISSIVITY OF MATERIALS.

During the third quarter of the contractual year of Contract NASW-104 for the determination of emissivity of materials, the emittance of nine specimens was measured at temperatures ranging up to 2200F and at pressures averaging 10(exp -8) mm Hg. The materials tested included columbium, columbium with an oxidized surface, molybdenum, graphite varnish on Type 310 stainless steel, stainless steel with an oxidized surface, and platinum black. In the spectral emittance rig, spectral as well as total emittance was measured on three specimens and total emittance only was measured on a fourth. In the total emittance rig, total emittance data was obtained on five specimens. Two of the specimens were endured. Investigations were made concerning the operational characteristics of both rigs in order to eliminate possible sources of error in the data. On the spectral emittance rig, tests were conducted to determine the exact magnitude of any error introduced in the spectral emittance values by beam intermixing resulting from imperfections in the optical system. On the total emittance rig, work was concentrated on the determination of the relative accuracy of the chromel-alumel and platinum-platinum 10% rhodium thermocouples used to measure the temperature of the specimen.

Emission↗

DOE OSTI2021

Pushing the efficiency limit of low-cost, industrially relevant Si solar cells to > 22.5% by advancing cell structures and technology innovations (Final Report)

The overall objective of this program is to achieve ~23% bifacial n-type cell efficiencies by developing and implementing optimized homogeneous or selective boron (B) emitter on front and tunnel oxide passivated contact (TOPCon) on rear side, in combination with advanced fine-line screen-printing metallization with floating busbars. During this research project, first we developed a technology roadmap to drive the 21% n-PERT cell efficiency from 21% to 23% by transforming the cell design to n-TOPCon and establishing the requirements for each layer, including B emitter, rear n-TOPCon, n-base Si and screen-printed contacts. Next, consistent with our roadmap, we developed advanced homogeneous implanted B emitter (150-180 Ω/⌫) passivated with ALD Al 2 O 3 layer capped with PECVD SiN x /SiO x double-layer antireflection coating This gave a very low recombination current density of 10-15 fA/cm 2 prior to metallization. In addition, we demonstrated metallized recombination current density of ~31 fA/cm 2 for this advanced homogeneous B emitter with industrial screen-printed, fire-through contacts with 40 μm wide grid lines, floating busbars and implementation of an advanced Ag-Al paste which resulted in local or reduced area metal-Si contact under the grid lines with virtually no emitter surface etching. This paste reduced the full area metallized J oe,metal from >1100 fA/cm 2 to ~700 fA/cm 2 . We also developed novel processes for the formation of p + /p ++ selective B emitter by a) single B diffusion with selective etch back and b) two-steps diffusion with implanted B in field region and APCVD B diffusion under the metal grid. We achieved very low un-metallized recombination current density (J 0 ) of ~18 fA/cm 2 for the selective p ++ p + emitters (30/150 Ω/⌫) and metallized J 0 of ~28 fA/cm 2 with ~3% screen-printed metal contact to p ++ regions. Next, we developed the technology for n-TOPCon by growing phosphorus-doped LPCVD and PECVD poly-Si on top of ~ 15Å chemically grown (NAO) tunnel oxide. After an optimized anneal at 875 °C for 30 min, passivated n-TOPCon have unmetallized J 0 of ~ 5 fA/cm 2 which went down further to ~ 1 fA/cm 2 after a 700 Å SiN x capping layer and simulated contact firing cycle at 770 °C. After screen-printed fire-through metallization on this n-TOPCon with ~13% metal coverage, metallized J 0 value increased to only ~5 fA/cm 2 which is among the lowest reported value to the best of our knowledge for screen-printed metallization. Finally, we integrated all the above technology innovations and enhancements and demonstrated low-cost manufacturable screen-printed n-TOPCon bifacial Si solar cell with ~23% efficiencies. Based on the experimental and theoretical understanding developed in this project, we have developed a new technology roadmap that shows that implementation of busbarless contacts, 10-20 ms bulk lifetime Si, and selective B emitter or selective TOPCon on the front can drive ~23% efficient cells achieved in this research to ~25% at low-cost.

14 SOLAR ENERGY↗

NASA NTRSDate not supplied

Impact of Thermochromic Coatings on Thermal Management for Human Spacecraft Applications

Thermochromic variable emittance coatings (VECs) allow for passive, dynamic thermal management of space vehicles due to their temperature dependent optical properties. Ideally, a thermochromic material should exhibit low mid-IR emissivity for lower temperatures and switch to high mid-IR emissivity for higher temperatures; one promising material that demonstrates these characteristics is Lanthanum Strontium Manganite (LSM). The transition temperatures of LSM are dependent on the Lanthanum-to-Strontium ratio x, La1-xSrxMnO3. La0.8Sr0.2MnO3, which has an emittance of 0.5 for < 270 K, then a linear increase in emittance to 0.8 over an increase of 70 K where it will saturate at ~340K, is commonly utilized but this is tunable by changing the Sr concentration. The tunability of the transition temperature range of LSM motivates a need to understand the optimal thermal transition range for human spacecraft. Additionally, LSM has high solar absorptance and to combat this issue the VEC will be micropatterned on top of a highly solar reflective layer of Barium Sulfate (BaSO4). Consequently, this work will elucidate the tradeoffs between solar absorptance and variable emittance for this technology since the micropattern adversely couples the solar absorptance to the mid-IR emittance. This work develops a computational model using Thermal Desktop to study the utility of VECs on human spacecraft, such as Orion, subjected to mission phases such as lunar transit and Gateway docking. The model considers both external heat loads, from solar irradiation and planetary IR, as well as vehicle heat loads, from avionics and crew, as an input into the body mounted thermochromic radiators. There are several design targets for VECs, i.e. achieving the largest change in emittance, finding the optimal temperature range for the transition, and achieving the highest emittance in the high temperature phase. This work prioritizes these design targets for LSM to achieve the optimal heat rejection for a human spacecraft. The VECs are compared with static emittance coatings and the efficiency gains are quantified. Thermochromic VECs will ultimately lead to simplifications of active cooling systems which synergistically correlates to mass reduction and less energy consumption for space vehicles.

Joseph Peoples↗

DOE OSTI2020

Mechanistic Understanding and Rational Design of Quantum Dot/Mediator Interfaces for Efficient Photon Upconversion

The semiconductor-nanocrystal-sensitized, three-component upconversion system has made great strides over the past 5 years. The three components (i.e., triplet photosensitizer, mediator, and emitter) each play critical roles in determining the input and output photon energy and overall quantum efficiency (QE). The nanocrystal photosensitizer converts the absorbed photon into singlet excitons and then triplet excitons via intersystem crossing. The mediator accepts the triplet exciton via either direct Dexter-type triplet energy transfer (TET) or sequential charge transfer (CT) while extending the exciton lifetime. Through a second triplet energy-transfer step from the mediator to the emitter, the latter is populated in its lowest excited triplet state. Triplet–triplet annihilation (TTA) between two triplet emitters generates the emitter in its bright singlet state, which then emits the upconverted photon. Quantum dots (QD) have a tunable band gap, large extinction coefficient, and small singlet–triplet energy losses compared to metal–ligand charge-transfer complexes. This high triplet exciton yield makes QDs good candidates for photosensitizers. In terms of driving triplet energy transfer, the triplet energy of the mediator should be slightly lower than the triplet exciton energy of the QD sensitizer for a downhill energy landscape with minimal energy loss. The same energy cascade is also required for the transfer from the mediator to the emitter. Lastly, the triplet energy of the emitter must be slightly larger than one-half of its singlet energy to ensure that TTA is exothermic. Optimization of the sensitizer, mediator, and emitter will lead to an increase in the anti-Stokes shift and the total quantum efficiency. Evaluating each individual step’s efficiency and kinetics is necessary for the understanding of the limiting factors in existing systems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

NASA NTRS1971

Reactor core length, externally configured thermionic converter.

Results of testing a converter having an external emitter configuration for 190 hours using RF induction heating. The converter was assembled with a rhenium emitter, 25.4 cm long, having a 91.2 sq cm emitting area, and a niobium collector with a molybdenum coating to improve its electronic property. The collector was water-cooled. The test included: static power output measurements, dynamic characteristics, and the effects of the temperature distribution along the emitter. The maximum power output achieved from the converter at an emitter temperature of 1942 K was 178 W at 0.48 V output, with a power density of 1.95 W/sq cm and an efficiency of 5.5%. The static characteristics also indicated that, with a constant power input, the converter power output does not vary with the output voltage as a result of self-adjustment of the emitter temperature. An investigation of the effects of the temperature distribution along the emitter length showed a 33% improvement in the converter output power with a flattening of the emitter temperature.

Shimada, K.↗

NASA NTRS1988

Direct emissivity measurements on liquids and corrections to multi-color pyrometers

Optical pyrometry provides a means for non-contact temperature measurements whose accuracy depends on the accuracy with which specimen emittance is known. Two methods for obtaining the required emittance data are discussed in which the emittance is determined from measurements of the wavelength or polarization dependence of light emitted by the specimen. The spectral technique, multi-color pyrometry, yields apparent values for specimen emittance and temperature from emitted intensity measurements at two or more wavelengths. Emittance corrections cannot be eliminated by increasing the number of spectral intensity measurements required by an n-color pyrometer. Even if this were possible, the accuracy of temperature measurements by n-color pyrometry decreases with n such that pyrometers that require four intensity measurements would be impractical. In contrast, emittance values and corrections for one-color pyrometers can be accurately measured by the polarized light technique. The polarized light technique involves measurement of the degree of polarization for light emitted at an angle of 45 deg to the specimen normal. The reflectivities (r) for light polarized parallel (p) and normal (n) to the plane of emission are related by r(p) = r(n) squared. This leads to a simple relation between the intensity ratio for light emitted in the two polarized states and the emittance, i.e., e(n) = 2 - I(p)/I(n). The true specimen temperature is also obtained if absolute intensities are measured. Delvelopment of the polarized light technique in combination with one-color optical pyrometry is recommended to achieve accurate non-contact temperature measurements on liquids.

Nordine, Paul C.↗

NASA NTRS2003

Measurement and evaluation of the radiative properties of a thin solid fuel

Accurate modeling of combustion systems requires knowledge of the radiative properties of the system. Gas phase properties are well known, but detailed knowledge of surface properties is limited. Recent work has provided spectrally resolved data for some solid fuels, but only for the unburned material at room temperature, and for limited sets of previously burned and quenched samples. Due to lack of knowledge of the spectrally resolved properties at elevated temperatures, as well as processing limitations in the modeling effort, graybody values are typically used for the fuels surface radiative properties. However, the spectrally resolved properties for the fuels at room temperature can be used to give a first-order correction for temperature effects on the graybody values. Figure 1 shows a sample of the spectrally resolved emittance/absorptance for a thin solid fuel of the type commonly used in combustion studies, from approximately 2 to 20 microns. This plot clearly shows a strong spectral dependence across the entire range. By definition, the emittance is the ratio of the emitted energy to that of a blackbody at the same temperature. Therefore, to determine a graybody emittance for this material, the spectrally resolved data must be applied to a blackbody curve. The total area under the resulting curve is ratioed to the total area under the blackbody curve to yield the answer. Due to the asymmetry of the spectrally resolved emittance and the changing shape of the blackbody curve as the temperature increases, the relative importance of the emittance value at any given wavelength will change as a function of temperature. Therefore, the graybody emittance value for a given material will change as a function of temperature even if the spectral dependence of the radiative properties remains unchanged. This is demonstrated in Figures 2 and 3, which are plots of the spectrally resolved emittance for KimWipes (shown in Figure 1) multiplied by the blackbody curves for 300 K (Figure 2) and 800 K (Figure 3). Each figure also shows the blackbody curve for that temperature. Ratioing the areas under the curve for each of these figures give a graybody emittance of 0.64 at 300 K, and 0.46 at 800 K. It is recognized that materials undergoing pyrolysis will change in composition as they heat up, and that the radiative properties of the materials may have inherent temperature dependence. Both of these effects will contribute to changes in the radiative characteristics of a given material, and are not accounted for here. However, this paper demonstrates the temperature dependence of graybody radiative properties, and provides a method for a first-order correction (for temperature) to the graybody values if the spectrally resolved properties are known.

Pettegrew, Richard↗

DOE OSTI2021

Organic light emitting diode with split emissive layer

An organic light emitting diode (OLED) device includes an emissive layer having a first sublayer with a first emitter as a dopant, a second sublayer with a second emitter as a dopant, and a third sublayer with a third emitter as a dopant. The second sublayer is between the first sublayer and the third sublayer. A concentration of the first emitter in the first sublayer exceeds a concentration of the third emitter in the third sublayer, and the concentration of the third emitter in the third sublayer exceeds a concentration of the second emitter in the second sublayer.

Li, Jian-Jun↗

DOE OSTI2020

Single shot cathode transverse momentum imaging in high brightness photoinjectors

In state of the art photoinjector electron sources, thermal emittance from photoemission dominates the final injector emittance. Therefore, low thermal emittance cathode developments and diagnostics are very important. Conventional thermal emittance measurements for the high gradient gun are time-consuming and thus thermal emittance is not measured as frequently as quantum efficiency during the lifetime of photocathodes, although both are important properties for the photoinjector optimizations. In this paper, a single shot measurement of photoemission transverse momentum, i.e., thermal emittance per rms laser spot size, is proposed for photocathode rf guns. By tuning the gun solenoid focusing, the electrons’ transverse momenta at the cathode are imaged to a downstream screen, which enables a single shot measurement of both the rms value and the detailed spectra of the photoelectrons’ transverse momenta. Both simulations and proof of principle experiments are reported.

43 PARTICLE ACCELERATORS↗

DOE OSTI2021

World Record Demonstration of > 30% Thermophotovoltaic Conversion Efficiency

Thermophotovoltaic (TPV) devices are solid-state heat engines that convert thermal radiation into electricity using semiconductor diodes, and have applications in energy storage, primary power conversion, and waste heat recovery. Higher temperature emitters and wider band gap photovoltaics (PVs) generally afford higher TPV efficiencies. High temperature emitters are accessible in thermal energy storage applications. We have demonstrated a world record 31% +/- 2% TPV conversion efficiency with a 0.9 cm2 GaAs-based PV device under a 2430 °C thermal emitter, producing an electrical output power of 2.23 W. Critical to the result was the cell’s high reflectance of photon energies below the device band gap. Unlike solar PV, for which sub-band gap (SBG) light is lost, a TPV cell can reflect and recycle SBG light to the thermal emitter. The demonstration was made on a custom-built measurement platform in which a ~100 cm2 graphite thermal emitter was heated under vacuum up to 2430 °C. The TPV efficiency was evaluated by comparing the measured electrical output power of the TPV with the calorimetrically measured total net power incident on the cell. The measured TPV efficiency as a function of thermal emitter temperature was corroborated by our full system modeling predictions. As far as the authors are aware, this is the highest TPV conversion efficiency ever measured, and device improvements should yield > 40% efficiency in the near future.

27 ARPA - Advanced Research Projects Agency-Energy↗

DOE OSTI2021

Superconducting RF Gun with High Current and the Capability to Generate Polarized Electron Beams

High-current low-emittance CW electron beams are indispensable for nuclear and high-energy physics fixed target and collider experiments, cooling high energy hadron beams, generating CW beams of monoenergetic X-rays (in FELs) and gamma-rays (in Compton sources). Polarization of electrons in these beams provides extra value by opening a new set of observables and frequently improving the data quality. We report on the upgrade of the unique and fully functional CW SRF 1.25 MeV SRF gun, built as part of the Coherent electron Cooling (CeC) project, which has demonstrated sustained CW operation with CsK2Sb photocathodes generating electron bunches with record-low transverse emittances and record-high bunch charge exceeding 10 nC. We propose to extend the capabilities of this system to high average current of 100 milliampere in two steps: increasing the current 30-fold at each step with the goal to demonstrate reliable long-term operation of the high-current low-emittance CW SRF guns. We also propose to test polarized GaAs photocathodes in the ultra-high vacuum (UHV) environment of the SRF gun, which has never been successfully demonstrated in RF accelerators.

43 PARTICLE ACCELERATORS↗

DOE OSTI2026

Dispersion Suppression for Wedge-Based Final Cooling at a 10 TeV Muon Collider

Achieving a luminosity of $\gtrsim 10^{34} cm^{-2} s^{-1}$ in a $10 \text{ } TeV$ Muon Collider, given the short lifetime of a muon, requires reducing the 6D emittance of the muon beam through a process known as ionization cooling. In the final stage of this cooling process, the transverse emittance must be reduced to $22 \text{ } μm$, typically by allowing longitudinal emittance growth up to downstream acceptance limits. While the current International Muon Collider Collaboration designs involve $40 \text{ } T$ solenoids to reach the transverse emittance target, such high-field solenoids come with several challenges, including mechanical stress management, quench protection, and potential limitations in relying on High Temperature Superconductor technology. Designed as an alternative to using such solenoids while simultaneously reaching target transverse emittance, the previously proposed wedge-based, reverse emittance-exchange cooling scheme requires excellent dispersion suppression. In this study, we design and simulate a dispersion suppressor channel for the wedge-based final cooling design that reduces dispersion in the target direction to a target value of $D_x \sim 0.001 \text{ } m$.

Karaaslan, I. [Chicago U.] (ORCID:0000000337849879↗

DOE OSTI2020

Low-Energy Cooling for Electron Ion Collider

Luminosity parameters at the highest hadron energy in the Electron Ion Collider (EIC) require a proton beam with a small vertical emittance. Such a small emittance can be obtained using the technique of electron cooling, by pre-cooling of the proton bunches at an injection energy of 23:8 GeV. After pre-cooling, the proton bunches are accelerated to the maximum energy for collisions. Once at the top energy, such proton bunches can be refilled frequently to maintain a high average luminosity, or, alternatively, cooling at the top energy could be provided with relaxed requirements of just counteracting the emittance growth due to Intra-Beam Scattering (IBS) and thus maintaining the luminosity close to its initial peak value. Presently, several schemes of cooling at the top energy of 275 GeV are being considered with the goal to maintain the initial proton beam parameters, thus relying on pre-cooling at the low energy to obtain such initial parameters of proton bunches. For the lowest proton collision energy of 41 GeV in the EIC, there is a need for an electron cooler which counteracts the beam emittance growth due to IBS. This can be achieved by the same electron cooler which is used for cooling of protons at 23.8 GeV. In this case, we assume the electron cooler rst pre-cools protons at an injection energy of 23.8 GeV and then, after acceleration, cools the 41 GeV protons, counteracting IBS and maintaining the beam emittances. In this report, we summarize a feasibility study of an electron cooler that would be needed to cool protons at 23.8 GeV to obtain a small vertical emittance, as well as to counteract beam growth due to IBS for collisions at 41 GeV. The traditional electron cooling system employed at a typical low-energy cooler is based on an electron beam generated with an electrostatic electron gun in DC operating mode, immersed in a longitudinal magnetic field. To cool protons at 23.8 and 41 GeV, electron beam energies of 13.0 and 22.3MeV, respectively, are required. Due to the technical limitations of static high-voltage acceleration, these beam energies require RF acceleration of a pulsed electron beam. Electron cooling using RF-accelerated electron bunches was recently successfully commissioned in RHIC, allowing us to consider such an approach for EIC low-energy electron cooling.

43 PARTICLE ACCELERATORS↗

NASA NTRS1973

Fabrication and life testing of thermionic converters

An unfueled converter containing a chloride-fluoride duplex tungsten emitter of 4.78 eV vacuum work function was tested for 46,647 hours at an emitter temperature of 1973 K and an electrode power output of about 8 watts/sq cm. The test demonstrated the superior and stable performance of the (110) oriented tungsten emitter at high temperatures. Three 90 UC-10 ZrC(C/U = 1.04, tungsten additive = 4 wt %) fueled converters were fabricated and tested at an emitter temperature of 1873 K. Converter containing chloride-arc-cast duplex tungsten cladding showed temperature thermionic performance and slower rate of performance drop than converter containing chloride-fluoride duplex tungsten cladding. This is believed to be due to the superior fuel component diffusion resistance of the arc-cast tungsten substrate used in the fuel cladding. It was shown that a converter containing a carbide fueled chloride-arc-cast duplex tungsten emitter with an initial electrode power output of 6.80 watts/sq cm could still deliver an electrode power output of 6.16 watts/sq cm after 18,632 hours of operation at an emitter temperature of 1873 K.

Yang, L.↗

NASA NTRS1976

Solid-state current transformer

A signal transformation network which is uniquely characterized to exhibit a very low input impedance while maintaining a linear transfer characteristic when driven from a voltage source and when quiescently biased in the low microampere current range is described. In its simplest form, it consists of a tightly coupled two transistor network in which a common emitter input stage is interconnected directly with an emitter follower stage to provide virtually 100 percent negative feedback to the base input of the common emitter stage. Bias to the network is supplied via the common tie point of the common emitter stage collector terminal and the emitter follower base stage terminal by a regulated constant current source, and the output of the circuit is taken from the collector of the emitter follower stage.

Farnsworth, D. L.↗

NASA NTRS1996

Review of recent thermophotovoltaic (TPV) research at Lewis Research Center

Thermophotovoltaic (TPV) research at NASA Lewis Research Center that began in the late 1980's is reviewed. This work has been concentrated on low bandgap indium gallium arsenide (InGaAs) PV cells and rare earth yttrium aluminum garnet (YAG) thin film selective emitters, as well as, TPV system studies. An emittance theory has been developed for the thin film emitters. Experimental spectral emittance results for erbium Er-YAG and holmium Ho-YAG show excellent emittance (greater than or equal to .7) within the emission bands. The .75 eV InGaAs PV cells fabricated at Lewis have excellent quantum efficiency. An efficiency of 13% has been measured for this cell coupled to an Er-YAG selective emitter and a short pass IR filter.

Chubb, Donald L.↗

NASA NTRS1999

Analyses of Transistor Punchthrough Failures

The failure of two transistors in the Altitude Switch Assembly for the Solid Rocket Booster followed by two additional failures a year later presented a challenge to failure analysts. These devices had successfully worked for many years on numerous missions. There was no history of failures with this type of device. Extensive checks of the test procedures gave no indication for a source of the cause. The devices were manufactured more than twenty years ago and failure information on this lot date code was not readily available. External visual exam, radiography, PEID, and leak testing were performed with nominal results Electrical testing indicated nearly identical base-emitter and base-collector characteristics (both forward and reverse) with a low resistance short emitter to collector. These characteristics are indicative of a classic failure mechanism called punchthrough. In failure analysis punchthrough refers to an condition where a relatively low voltage pulse causes the device to conduct very hard producing localized areas of thermal runaway or "hot spots". At one or more of these hot spots, the excessive currents melt the silicon. Heavily doped emitter material diffuses through the base region to the collector forming a diffusion pipe shorting the emitter to base to collector. Upon cooling, an alloy junction forms between the pipe and the base region. Generally, the hot spot (punch-through site) is under the bond and no surface artifact is visible. The devices were delidded and the internal structures were examined microscopically. The gold emitter lead was melted on one device, but others had anomalies in the metallization around the in-tact emitter bonds. The SEM examination confirmed some anomalies to be cosmetic defects while other anomalies were artifacts of the punchthrough site. Subsequent to these analyses, the contractor determined that some irregular testing procedures occurred at the time of the failures heretofore unreported. These testing irregularities involved the use of a breakout box and were the likely cause of the failures. There was no evidence to suggest a generic failure mechanism was responsible for the failure of these transistors.

Nicolas, David P.↗

NASA NTRS1995

Review of Recent Thermophotovoltaic (TPV) Research at Lewis Research Center

Thermophotovoltaic (TPV) research at NASA Lewis Research Center that began in the late 1980's is reviewed. This work has been concentrated on low bandgap indium gallium arsenide (InGaAs) PV calls and rare earth - yttrium aluminum garnet (YAG) thin film selective emitters, as well as, TPV system studies. An emittance theory has been developed for the thin film emitters. Experimental spectral emittance results for erbium Er-YAG and holmium Ho-YAG show excellent emittance (greater than or equal to 0.7) within the emission bands. The 0.75 eV InGaAs PV cells fabricated at Lewis have excellent quantum efficiency. An efficiency of 130% has been measured for this cell coupled to an Er-YAG selective emitter and a short pass IR filter.

Chubb, Donald L.↗