Thickness dependence of magnetotransport properties of tungsten ditelluride
Here we investigate the electronic structure of tungsten ditelluride (WTe 2 ) flakes with different thicknesses in magnetotransport studies. The temperature-dependent resistance and magnetoresistance (MR) measurements both confirm the breaking of carrier balance induced by thickness reduction, which suppresses the “turn-on” behavior and large positive MR. The Shubnikov-de-Haas oscillation studies further confirm the thickness-dependent change of electronic structure of WTe 2 and reveal a possible temperature-sensitive electronic structure change. Finally, we report the thickness-dependent anisotropy of the Fermi surface, which reveals that multilayer WTe 2 is an electronic 3D material and the anisotropy decreases as thickness decreases.