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At least 739 records · Page 41

Oxygen-promoted catalyst sintering influences number density, alignment, and wall number of vertically aligned carbon nanotubes

A lack of synthetic control and reproducibility during vertically aligned carbon nanotube (CNT) synthesis has stifled many promising applications of organic nanomaterials. Oxygen-containing species are particularly precarious in that they have both beneficial and deleterious effects and are notoriously difficult to control. In this paper, we demonstrated diatomic oxygen's ability, independent of water, to tune oxide-supported catalyst thin film dewetting and influence nanoscale (diameter and wall number) and macro-scale (alignment and density) properties for as-grown vertically aligned CNTs. In particular, single- or few-walled CNT forests were achieved at very low oxygen loading, with single-to-multi-walled CNT diameters ranging from 4.8 ± 1.3 nm to 6.4 ± 1.1 nm over 0–800 ppm O 2 , and an expected variation in alignment, where both were related to the annealed catalyst morphology. Morphological differences were not the result of subsurface diffusion, but instead occurred via Ostwald ripening under several hundred ppm O 2 , and this effect was mitigated by high H 2 concentrations and not due to water vapor (as confirmed in O 2 -free water addition experiments), supporting the importance of O 2 specifically. Further characterization of the interface between the Fe catalyst and Al 2 O 3 support revealed that either oxygen-deficit metal oxide or oxygen-adsorption on metals could be functional mechanisms for the observed catalyst nanoparticle evolution. Finally, taken as a whole, our results suggest that the impacts of O 2 and H 2 on the catalyst evolution have been underappreciated and underleveraged in CNT synthesis, and these could present a route toward facile manipulation of CNT forest morphology through control of the reactive gaseous atmosphere alone.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Unusual electrical conductivity driven by localized stoichiometry modification at vertical epitaxial interfaces

Precise control of lattice mismatch accommodation and interfacial cation diffusion is critical to modulate correlated functionalities in epitaxial heterostructures, particularly when the interface composition is positioned near a compositional phase transition boundary. Here we select La 1-x Sr x MnO 3 (LSMO) as a prototype phase transition oxide and establish vertical epitaxial interfaces with NiO for exploring the strong interplay between strain accommodation, stoichiometry modification, and localized electron transport across the interface. It is found that localized stoichiometry modification overcomes the dead layer problem plaguing LSMO and leads to strongly directional conductivity, as manifested by a more than three orders of magnitude difference between out-of-plane and in-plane conductivity. Comprehensive atomic scale structural characterization and transport measurements reveal that this emerging behavior is created by a compositional change produced by preferential cation diffusion that pushes the LSMO phase transition from insulating into metallic within an ultrathin interface region. This study explores the nature of unusual electrical conductivity at vertical epitaxial interfaces and highlights the beneficial role of controllable cation diffusion that enables emerging functionalities for a broad range of potential applications such as memristors, spintronic devices, and novel nanoelectronic devices using strongly correlated materials.

36 MATERIALS SCIENCE↗

Self-assembled HfO 2 -Au nanocomposites with ultra-fine vertically aligned Au nanopillars

Oxide-metal-based hybrid materials have gained great research interest in recent years owing to their potential for multifunctionality, property coupling, and tunability. Specifically, oxide-metal hybrid materials in a vertically aligned nanocomposite (VAN) form could produce pronounced anisotropic physical properties, e.g., hyperbolic optical properties. Herein, self-assembled HfO 2 -Au nanocomposites with ultra-fine vertically aligned Au nanopillars (as fine as 3 nm in diameter) embedded in a HfO 2 matrix were fabricated using a one-step self-assembly process. The film crystallinity and pillar uniformity can be obviously improved by adding an ultra-thin TiN-Au buffer layer during the growth. Here, the HfO 2 -Au hybrid VAN films show an obvious plasmonic resonance at 480 nm, which is much lower than the typical plasmonic resonance wavelength of Au nanostructures, and is attributed to the well-aligned ultra-fine Au nanopillars. Coupled with the broad hyperbolic dispersion ranging from 1050 nm to 1800 nm in wavelength, and unique dielectric HfO 2 , this nanoscale hybrid plasmonic metamaterial presents strong potential for the design of future integrated optical and electronic switching devices.

36 MATERIALS SCIENCE↗

Vertical van der Waals heterojunction diodes comprising 2D semiconductors on 3D β-Ga 2 O 3

Wide bandgap semiconductors such as gallium oxide (Ga 2 O 3 ) have attracted much attention for their use in next-generation high-power electronics. Although single-crystal Ga 2 O 3 substrates can be routinely grown from melt along various orientations, the influence of such orientations has been seldom reported. Further, making rectifying p–n diodes from Ga 2 O 3 has been difficult due to lack of p-type doping. In this study, we fabricated and optimized 2D/3D vertical diodes on β-Ga 2 O 3 by varying the following three factors: substrate planar orientation, choice of 2D material and metal contacts. Furthermore, the quality of our devices was validated using high-temperature dependent measurements, atomic-force microscopy (AFM) techniques and technology computer-aided design (TCAD) simulations. Our findings suggest that 2D/3D β-Ga 2 O 3 vertical heterojunctions are optimized by substrate planar orientation (–201), combined with 2D WS 2 exfoliated layers and Ti contacts, and show record rectification ratios (>10 6 ) concurrently with ON-Current density (>10 3 A cm –2 ) for application in power rectifiers.

36 MATERIALS SCIENCE↗

New vertical cryostat for the high field superconducting magnet test station at CERN

In the framework of the R and D program for new superconducting magnets for the Large Hadron Collider accelerator upgrades, CERN is building a new vertical test station to test high field superconducting magnets of unprecedented large size. This facility will allow testing of magnets by vertical insertion in a pressurized liquid helium bath, cooled to a controlled temperature between 4.2 K and 1.9 K. The dimensions of the cryostat will allow testing magnets of up to 2.5 m in length with a maximum diameter of 1.5 m and a mass of 15 tons. To allow for a faster insertion and removal of the magnets and reducing the risk of helium leaks, all cryogenics supply lines are foreseen to remain permanently connected to the cryostat. A specifically designed 100 W heat exchanger is integrated in the cryostat helium vessel for a controlled cooling of the magnet from 4.2 K down to 1.9 K in a 3 m{sup 3} helium bath. This paper describes the cryostat and its main functions, focusing on features specifically developed for this project. The status of the construction and the plans for assembly and installation at CERN are also presented.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Characterization of vertical strain silicon MOSFET incorporating dielectric pocket (SDP-VMOSFET)

The vertical Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) leads to a double channel width that can increase the packaging density. The strained silicon MOSFET was introduced to modify the carrier transport properties of silicon in order to enhance transport of both electrons and holes within strained layer. Dielectric pocket was act to control encroachment of the drain doping into the channel and reduce short channel effects (SCE). SDP-VMOSFET which was a combination of those advantages was proposed to overcome the SCE in term of leakage current, threshold voltage roll-off also Drain Induce Barrier Lowering (DIBL). As a result, SDP-VMOSFET produces a better threshold voltage and DIBL compared to related structures. Meanwhile, it gives slightly increased for leakage current compared to Vertical MOSFET Incorporating Dielectric Pocket. The characteristics of the SDP-VMOSFET are analyzed in order to optimize the performance of the device and leading to the next generation of IC technology.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Operating principles of vertical transistors based on monolayer two-dimensional semiconductor heterojunctions

A vertical transistor based on a double gated, atomically thin heterojunction is theoretically examined. Both p-type and n-type transistor operations can be conveniently achieved by using one of the two gates as the switching gate. The transistor shows excellent saturation of output I-V characteristics due to drain-induced depletion and lack of tunneling barrier layers. The subthreshold slope could be below the thermionic limit due to band filtering as the switching mechanism. The atomically thin vertical PN heterojunction can be electrostatically modulated from a type II heterojunction to a broken bandgap alignment, which is preferred for maximizing the on-current.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

A systematic approach to vertically excited states of ethylene using configuration interaction and coupled cluster techniques

A systematic sequence of configuration interaction and coupled cluster calculations were used to describe selected low-lying singlet and triplet vertically excited states of ethylene with the goal of approaching the all electron, full configuration interaction/complete basis set limit. Included among these is the notoriously difficult, mixed valence/Rydberg {sup 1}B{sub 1u} V state. Techniques included complete active space and iterative natural orbital configuration interaction with large reference spaces which led to variational spaces of 1.8 × 10{sup 9} parameters. Care was taken to avoid unintentionally biasing the results due to the widely recognized sensitivity of the V state to the details of the calculation. The lowest vertical and adiabatic ionization potentials to the {sup 2}B{sub 3u} and {sup 2}B{sub 3} states were also determined. In addition, the heat of formation of twisted ethylene {sup 3}A{sub 1} was obtained from large basis set coupled cluster theory calculations including corrections for core/valence, scalar relativistic and higher order correlation recovery.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Vertical vibration and shape oscillation of acoustically levitated water drops

We present the vertical harmonic vibration of levitated water drops within ultrasound field. The restoring force to maintain such a vibration mode is provided by the resultant force of acoustic radiation force and drop gravity. Experiments reveal that the vibration frequency increases with the aspect ratio for drops with the same volume, which agrees with the theoretical prediction for those cases of nearly equiaxed drops. During the vertical vibration, the floating drops undergo the second order shape oscillation. The shape oscillation frequency is determined to be twice the vibration frequency.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

1.9 W continuous-wave single transverse mode emission from 1060 nm edge-emitting lasers with vertically extended lasing area

High-brightness edge-emitting semiconductor lasers having a vertically extended waveguide structure emitting in the 1060 nm range are investigated. Ridge waveguide (RW) lasers with 9 μm stripe width and 2.64 mm cavity length yield highest to date single transverse mode output power for RW lasers in the 1060 nm range. The lasers provide 1.9 W single transverse mode optical power under continuous-wave (cw) operation with narrow beam divergences of 9° in lateral and 14° (full width at half maximum) in vertical direction. The beam quality factor M{sup 2} is less than 1.9 up to 1.9 W optical power. A maximum brightness of 72 MWcm{sup −2}sr{sup −1} is obtained. 100 μm wide and 3 mm long unpassivated broad area lasers provide more than 9 W optical power in cw operation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

High-power narrow-vertical-divergence photonic band crystal laser diodes with optimized epitaxial structure

900 nm longitudinal photonic band crystal (PBC) laser diodes with optimized epitaxial structure are fabricated. With a same calculated fundamental-mode divergence, stronger mode discrimination is achieved by a quasi-periodic index modulation in the PBC waveguide than a periodic one. Experiments show that the introduction of over 5.5 μm-thick PBC waveguide contributes to only 10% increment of the internal loss for the laser diodes. For broad area PBC lasers, output powers of 5.75 W under continuous wave test and over 10 W under quasi-continuous wave test are reported. The vertical divergence angles are 10.5° at full width at half maximum and 21.3° with 95% power content, in conformity with the simulated angles. Such device shows a prospect for high-power narrow-vertical-divergence laser emission from single diode laser and laser bar.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Facile construction of vertically aligned EuS-ZnO hybrid core shell nanorod arrays for visible light driven photocatalytic properties

We demonstrated the development of coupled semiconductor in the form of hybrid heterostructures for significant advancement in catalytic functional materials. In this article, we report the preparation of vertically aligned core shell ZnO-EuS nanorod photocatalyst arrays by a simple chemical solution process followed by sulfudation process. The XRD pattern confirmed formation of the hexagonal wurtzite structure of ZnO and cubic nature of the EuS. Cross sectional FESEM images show vertical rod array structure, and the size of the nanorods ranges from 80 to 120 nm. UV-Vis DRS spectra showed that the optical absorption of ZnO was significantly enhanced to the visible region by modification with EuS surfaces. TEM study confirmed that the surface of ZnO was drastically improved by the modification with EuS nanoparticle. The catalytic activity of EuS−ZnO core shell nanorod arrays were evaluated by the photodegradation of Methylene Blue (MB) dye under visible irradiation. The results revealed that the photocatalytic activity of EuS−ZnO was much higher than that of ZnO under natural sunlight. EuS−ZnO was found to be stable and reusable without appreciable loss of catalytic activity up to four consecutive cycles.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Vertical electron transport in van der Waals heterostructures with graphene layers

We propose and analyze an analytical model for the self-consistent description of the vertical electron transport in van der Waals graphene-layer (GL) heterostructures with the GLs separated by the barriers layers. The top and bottom GLs serve as the structure emitter and collector. The vertical electron transport in such structures is associated with the propagation of the electrons thermionically emitted from GLs above the inter-GL barriers. The model under consideration describes the processes of the electron thermionic emission from and the electron capture to GLs. It accounts for the nonuniformity of the self-consistent electric field governed by the Poisson equation which accounts for the variation of the electron population in GLs. The model takes also under consideration the cooling of electrons in the emitter layer due to the Peltier effect. We find the spatial distributions of the electric field and potential with the high-electric-field domain near the emitter GL in the GL heterostructures with different numbers of GLs. Using the obtained spatial distributions of the electric field, we calculate the current-voltage characteristics. We demonstrate that the Peltier cooling of the two-dimensional electron gas in the emitter GL can strongly affect the current-voltage characteristics resulting in their saturation. The obtained results can be important for the optimization of the hot-electron bolometric terahertz detectors and different devices based on GL heterostructures.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Electrokinetics of scalable, electric-field-assisted fabrication of vertically aligned carbon-nanotube/polymer composites

Composite thin films incorporating vertically aligned carbon nanotubes (VACNTs) offer promise for a variety of applications where the vertical alignment of the CNTs is critical to meet performance requirements, e.g., highly permeable membranes, thermal interfaces, dry adhesives, and films with anisotropic electrical conductivity. However, current VACNT fabrication techniques are complex and difficult to scale up. In this paper, we describe a solution-based, electric-field-assisted approach as a costeffective and scalable method to produce large-area VACNT composites. Multiwall-carbon nanotubes are dispersed in a polymeric matrix, aligned with an alternating-current (AC) electric field, and electrophoretically concentrated to one side of the thin film with a direct-current (DC) component to the electric field. This approach enables the fabrication of highly concentrated, individually aligned nanotube composites from suspensions of very dilute (Φ=4×10 –4 ) volume fraction. We experimentally investigate the basic electrokinetics of nanotube alignment under AC electric fields, and show that simple models can adequately predict the rate and degree of nanotube alignment using classical expressions for the induced dipole moment, hydrodynamic drag, and the effects of Brownian motion. The composite AC þ DC field also introduces complex fluid motion associated with AC electro-osmosis and the electrochemistry of the fluid/electrode interface. We experimentally probe the electric-field parameters behind these electrokinetic phenomena, and demonstrate, with suitable choices of processing parameters, the ability to scalably produce large-area composites containing VACNTs at number densities up to 10 10 nanotubes/cm 2 . This VACNT number density exceeds that of previous electric-fieldfabricated composites by an order of magnitude, and the surface-area coverage of the 40nm VACNTs is comparable to that of chemical-vapor-deposition-grown arrays of smaller-diameter nanotubes.

42 ENGINEERING↗

Schottky-contacted vertically self-aligned ZnO nanorods for hydrogen gas nanosensor applications

Vertically well aligned ZnO nanorods (NRs) were grown on Si(100) substrate using RF magnetron sputtering technique. Scanning electron microscopy images confirms uniform distribution of NRs on 2 in. wafer with average diameter, height and density being ∼75 nm, ∼850 nm, and ∼1.5 × 10{sup 10} cm{sup −2}, respectively. X-ray diffraction reveals that the ZnO NRs are grown along c-axis direction with wurtzite crystal structure. Cathodoluminescence spectroscopy, which shows a single strong peak around 3.24 eV with full width half maxima 130 meV, indicates the high crystalline and optical quality of ZnO and very low defect density. Vertically aligned nanosensors were fabricated by depositing gold circular Schottky contacts on ZnO NRs. Resistance responses of nanosensors were observed in the range from 50 to 150 °C in 1% and 5% hydrogen in argon environment, which is below and above the explosive limit (4%) of hydrogen in air. The nanosensor's sensitivity increases from 11% to 67% with temperature from 50 to 150 °C and also shows fast response time (9–16 s) and moderate recovery time (100–200 s). A sensing mechanism is proposed based on Schottky barrier changes at heterojunctions and change in depletion region of NRs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Boron doped Si rich oxide/SiO{sub 2} and silicon rich nitride/SiN{sub x} bilayers on molybdenum-fused silica substrates for vertically structured Si quantum dot solar cells

Vertically structured Si quantum dots (QDs) solar cells with molybdenum (Mo) interlayer on quartz substrates would overcome current crowding effects found in mesa-structured cells. This study investigates the compatibility between boron (B) doped Si QDs bilayers and Mo-fused silica substrate. Both Si/SiO{sub 2} and Si/SiN{sub x} based QDs bilayers were studied. The material compatibility under high temperature treatment was assessed by examining Si crystallinity, microstress, thin film adhesion, and Mo oxidation. It was observed that the presence of Mo interlayer enhanced the Si QDs size confinement, crystalline fraction, and QDs size uniformity. The use of B doping was preferred compared to phosphine (PH{sub 3}) doping studied previously in terms of better surface and interface properties by reducing oxidized spots on the film. Though crack formation due to thermal mismatch after annealing remained, methods to overcome this problem were proposed in this paper. Schematic diagram to fabricate full vertical structured Si QDs solar cells was also suggested.

36 MATERIALS SCIENCE↗

Vertical-cavity in-plane heterostructures: Physics and applications

We show that in-plane (lateral) heterostructures realized in vertical cavities with high contrast grating reflectors can be used to significantly modify the anisotropic dispersion curvature, also interpreted as the photon effective mass. This design freedom enables exotic configurations of heterostructures and many interesting applications. The effects of the anisotropic photon effective mass on the mode confinement, mode spacing, and transverse modes are investigated. As a possible application, the method of boosting the speed of diode lasers by engineering the photon-photon resonance is discussed. Based on this platform, we propose a system of two laterally coupled cavities, which shows the breaking of parity-time symmetry in vertical cavity structures.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor structure

We fabricate a vertical spin metal-oxide-semiconductor field-effect transistor (spin-MOSFET) structure, which is composed of an epitaxial single-crystal heterostructure with a ferromagnetic-semiconductor GaMnAs source/drain, and investigate its spin-dependent transport properties. We modulate the drain-source current I{sub DS} by ∼±0.5% with a gate-source voltage of ±10.8 V and also modulate I{sub DS} by up to 60% with changing the magnetization configuration of the GaMnAs source/drain at 3.5 K. The magnetoresistance ratio is more than two orders of magnitude higher than that obtained in the previous studies on spin MOSFETs. Our result shows that a vertical structure is one of the hopeful candidates for spin MOSFET when the device size is reduced to a sub-micron or nanometer scale.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗