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At least 739 records · Page 41
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Multivalent, multiflavored droplets by design

Nature self-assembles functional materials by programming flexible linear arrangements of molecules and then folding them to make 2D and 3D objects. To understand and emulate this process, we have made emulsion droplets with specific recognition and controlled valence. Uniquely monovalent droplets form dimers: divalent lead to polymer-like chains, trivalent allow for branching, and programmed mixtures of different valences enable a variety of designed architectures and the ability to subsequently close and open structures. Our functional building blocks are a hybrid of micrometer-scale emulsion droplets and nanoscale DNA origami technologies. Functional DNA origami rafts are first added to droplets and then herded into a patch using specifically designated “shepherding” rafts. Additional patches with the same or different specificities can be formed on the same droplet, programming multiflavored, multivalence droplets. The mobile patch can bind to a patch on another droplet containing complementary functional rafts, leading to primary structure formation. Further binding of nonneighbor droplets can produce secondary structures, a third step in hierarchical self-assembly. The use of mobile patches rather than uniform DNA coverage has the advantage of valence control at the expense of slow kinetics. Droplets with controlled flavors and valences enable a host of different material and device architectures.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2016

Infrared optical absorption in low-spin Fe 2+ -doped SrTiO 3

Band gap engineering in SrTiO3 and related titanate perovskites has long been explored due to the intriguing properties of the materials for photocatalysis and photovoltaic applications. A popular approach in the materials chemistry community is to substitutionally dope aliovalent transition metal ions onto the B site in the lattice to alter the valence band. However, in such a scheme there is limited control over the dopant valence, and compensating defects often form. Here we demonstrate a novel technique to controllably synthesize Fe2+- and Fe3+-doped SrTiO3 thin films without formation of compensating defects by co-doping with La3+ ions on the A site. We stabilize Fe2+-doped films by doping with two La ions for every Fe dopant, and find that the Fe ions exhibit a low-spin electronic configuration, producing optical transitions in the near infrared regime and degenerate doping. The novel electronic states observed here offer a new avenue for band gap engineering in perovskites for photocatalytic and photovoltaic applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Incorporation of Ti in epitaxial Fe2TiO4 thin films

The titanomagnetites (Fe2-xTixO4, x = 1) are a family of reducible spinel-structure oxides of interest for their favorable magnetic, catalytic, and electrical transport properties. To understand the stability of the system during low temperature deposition, epitaxial thin films of Fe2TiO4 were deposited by molecular beam epitaxy on MgO(001) at 250 – 375°C. The homogeneous incorporation of Ti, Fe valence, and film morphology were all found to be strongly dependent on the oxidation conditions at the low substrate temperatures employed. More oxidizing conditions led to phase separation into epitaxial, faceted Fe3O4 and rutile TiO2. Less oxidizing conditions resulted in polycrystalline films that exhibited Ti segregation to the film surface, as well as mixed Fe valence (Fe3+, Fe2+, Fe0). A narrow window of intermediate oxygen partial pressure during deposition yielded nearly homogeneous Ti incorporation and a large fraction of Fe2+. However, these films were poorly crystallized, and no occupation of tetrahedral sites in the spinel lattice by Fe2+ was detected by x-ray magnetic circular dichroism at the Fe L-edge. After vacuum annealing, a small fraction of Fe2+ was found to occupy tetrahedral sites. Comparison of these results with previous work suggests that the restriction of the deposition conditions to low temperature by the MgO substrate limits the incorporation of Ti into the spinel lattice. This work suggests a path towards obtaining stoichiometric, well-crystallized Fe2TiO4 by MBE by utilizing high substrate temperature and low oxygen partial pressure during deposition on temperature-stable substrates.

Kaspar, Tiffany C.↗
DOE OSTI2017

Optimized pulses for Raman excitation through the continuum: Verification using the multiconfigurational time-dependent Hartree-Fock method

Here, we have verified a mechanism for Raman excitation of atoms through continuum levels previously obtained by quantum optimal control using the multiconfigurational time-dependent Hartree-Fock (MCTDHF) method. For the optimal control, which requires running multiple propagations to determine the optimal pulse sequence, we used the computationally inexpensive time-dependent configuration interaction singles (TDCIS) method. TDCIS captures all of the necessary correlation of the desired processes but assumes that ionization pathways reached via double excitations are not present. MCTDHF includes these pathways and all multiparticle correlations in a set of time-dependent orbitals. The mechanism that was determined to be optimal in the Raman excitation of the Ne 1s 2 2s 2 2p 5 3p 1 valence state via the metastable 1s 2 2s 1 2p 6 3p 1 resonance state involves a sequential resonance-valence excitation. First, a long pump pulse excites the core-hole state, and then a shorter Stokes pulse transfers the population to the valence state. This process represents the first step in a multidimensional x-ray spectroscopy scheme that will provide a local probe of valence electronic correlations. Although at the optimal pulse intensities at the TDCIS level of theory the MCTDHF method predicts multiple ionization or excitation ionization of the atom, at slightly lower intensities (reduced by a factor of about 4) the TDCIS mechanism is shown to hold qualitatively. Quantitatively, the MCTDHF populations are reduced from the TDCIS calculations by a factor of 4.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Spin waves above and below the Verwey transition in TbBaFe 2 O 5

TbBaFe 2 O 5+δ (TBFO) is a mixed valence compound with an antiferromagnetic order (T N =450K) that changes along with the crystal structure and conductivity upon cooling below a Verwey-like transition (TV=280K). This type of double-cell-layered perovskite is useful to study putative charge ordering in fractional valence systems because the crystal structure develops unique sites for the different valence states. While the evolution of the static magnetic structure in the different charge ordered states of TBFO is known, in this study we investigate the effect of charge ordering on the magnetic interactions. Dispersive magnetic excitations measured using single crystal inelastic neutron scattering experiments at T=4K V and T=320K>T V are modeled with linear-spin-wave theory to extract anisotropy and superexchange parameters. Below T V , we observe a sizable magnon gap due to an easy-axis magnetic anisotropy that closes above T V due to the evolution of easy-plane anisotropy. The magnetic interactions are found to be highly three-dimensional and change across T V . Above T V , where the conductivity is greater, a damping term is required to model the spin waves that suggests a coupling to valence fluctuations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Resonant and bound states of charged defects in two-dimensional semiconductors

A detailed understanding of charged defects in two-dimensional semiconductors is needed for the development of ultrathin electronic devices. Here, we study negatively charged acceptor impurities in monolayer WS 2 using a combination of scanning tunnelling spectroscopy and large-scale atomistic electronic structure calculations. We observe several localized defect states of hydrogenic wave function character in the vicinity of the valence band edge. Some of these defect states are bound, while others are resonant. The resonant states result from the multi-valley valence band structure of WS$_2$, whereby localized states originating from the secondary valence band maximum at Γ hybridize with continuum states from the primary valence band maximum at K/K$^{\prime}$. Resonant states have important consequences for electron transport as they can trap mobile carriers for several tens of picoseconds.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Direct Observation of the E_ Resonant State in GaAs1-xBix

Bismuth-derived resonant states with T2 symmetry are detected in the valence band of GaAs1-xBix using electromodulated reflectance. A doublet is located 42 meV below the valence band edge of GaAs that is split by local strain around isolated Bi impurity atoms. A transition associated with a singlet is also observed just above the GaAs spin orbit split-off band. These states move deeper into the valence band with increasing Bi concentration but at a much slower rate than the well-known giant upward movement of the valence band edge in GaAs1-xBix. Our results provide key new insights for clarifying the mechanisms by which isovalent impurities alter the bandstructure of the host semiconductor.

14 SOLAR ENERGY↗
DOE OSTI2018

Bulk electronic structure of non-centrosymmetric EuTGe 3 (T=Co, Ni, Rh, Ir) studied by hard x-ray photoelectron spectroscopy

Non-centrosymmetric EuTGe 3 ( T = Co, Ni, Rh, and Ir) possesses magnetic Eu 2+ ions, and antiferromagnetic ordering appears at low temperatures. Transition-metal substitution leads to changes in the unit-cell volume and in the magnetic ordering. However, the magnetic ordering temperature does not scale with the volume change, and the Eu valence is expected to remain divalent. Here we study the bulk electronic structure of non-centrosymmetric Eu T Ge 3 ( T = Co, Ni, Rh, and Ir) by hard x-ray photoelectron spectroscopy. The Eu 3d core-level spectrum confirms the robust Eu 2+ valence state against the transition-metal substitution with a small contribution from Eu 3+ . The estimated Eu mean valence is around 2.1 in these compounds, as confirmed by multiplet calculations. In contrast, the Ge 2p spectrum shifts to higher binding energy upon cha nging the transition metal from 3d to 4d to 5d elements, hinting at a change in the Ge- T bonding strength. The valence bands of the different compounds are found to be well reproduced by ab initio band structure calculations.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Effect of anti-site disorder on magnetism in La 2 NiMnO 6

La 2 NiMnO 6 has been reported to exhibit a paramagnetic to ferromagnetic transition with a transition temperature of ~ 260 K. However, most of its magnetic properties, such as the saturation magnetization and even the transition temperature, appear to vary considerably among different reports. This is possibly because the crystallographic structure as well as the extent of the anti-site disorder (ASD) at the Ni/Mn sites are strongly influenced by the choice of synthesis routes. There are diverse reports connecting the extent of ASD to the valencies of Ni and Mn ions, such as Ni 2+ -Mn 4+ and Ni 3+ -Mn 3+ , including suggestions of thermally induced valence transitions. Consequently, these reports arrive at very different conclusions on the mechanism behind the magnetic properties of La 2 NiMnO 6 . To address the correlation between ASD and valency, we have carried out a comparative study of two monoclinic La 2 NiMnO 6 polycrystals with different degrees of ASD. Using a combination of x-ray absorption spectroscopy, x-raymagnetic circular dichroism, andmagnetometry, we conclude that the valency of the transition metal ions, and the transition temperature, are insensitive to the extent of ASD. Furthermore, we find the magnetic moment decreases strongly with an increasing ASD. We attribute this effect to the introduction of antiferromagnetic interactions in the anti-site disordered regions.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Realistic shell-model calculations for p -shell nuclei including contributions of a chiral three-body force

In this study we present an evolution of our derivation of the shell-model effective Hamiltonian, namely introducing effects of three-body contributions. More precisely, we consider a three-body potential at next-to-next-to-leading order in chiral perturbation theory, and the induced three-body forces that arise from many-body correlations among valence nucleons. The first one is included, in the derivation of the effective Hamiltonian for one- and two-valence nucleon-systems, at first order in the many-body perturbation theory. Namely, we include only the three-body interaction between one or two valence nucleons and those belonging to the core. For nuclei with more than two valence particles, both induced—turned on by the two-body potential—and genuine three-body forces come into play. Since it is difficult to perform shell-model calculations with three-body forces, these contributions are estimated for the ground-state energy only. To establish the reliability of our approximations, we focus attention on nuclei belonging to the p shell, aiming to benchmark our calculations against those performed with the ab initio no-core shell model. The obtained results are satisfactory, and pave the way to the application of our approach to nuclear systems with heavier masses.

6 ≤ A ≤ 19↗
DOE OSTI2015

Charm and strange quark masses and f D s from overlap fermions

We use overlap fermions as valence quarks to calculate meson masses in a wide quark mass range on the 2 + 1 -flavor domain-wall fermion gauge configurations generated by the RBC and UKQCD Collaborations. The well-defined quark masses in the overlap fermion formalism and the clear valence quark mass dependence of meson masses observed from the calculation facilitate a direct derivation of physical current quark masses through a global fit to the lattice data, which incorporates O($a^2$) and O($m^4a^4$) corrections, chiral extrapolation, and quark mass interpolation. Using the physical masses of D s , D$^*_s$ and J/ψ as inputs, Sommer's scale parameter r 0 and the masses of charm quark and strange quark in the $\overline{MS}$ scheme are determined to be r 0 = 0.465 (4) (9) fm, $m^{\overline{MS}}_c$ (2 GeV ) = 1.118 (6) (24) GeV (or $m^{\overline{MS}}_c(m_c)$ = 1.304 (5) (20) GeV), and $m^{\overline{MS}}_s$ (2 GeV ) = 0.101 (3) (6) GeV, respectively. Furthermore, we observe that the mass difference of the vector meson and the pseudoscalar meson with the same valence quark content is proportional to the reciprocal of the square root of the valence quark masses. The hyperfine splitting of charmonium, M J/ψ -$M_{η_c}$, is determined o be 119(2)(7) MeV, which is in good agreement with the experimental value. Finally, we also predict the decay constant of D s to be $f_{D_S}$ = 254 (2) (4) MeV. The masses of charmonium P-wave states χ c0 , χ c1 and $h_c$ are also in good agreement with experiments.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2019

Topological Insulators in Twisted Transition Metal Dichalcogenide Homobilayers

We show that moiré bands of twisted homobilayers can be topologically nontrivial, and illustrate the tendency by studying valence band states in ± K valleys of twisted bilayer transition metal dichalcogenides, in particular, bilayer MoTe 2 . Because of the large spin-orbit splitting at the monolayer valence band maxima, the low energy valence states of the twisted bilayer MoTe 2 at the + K (– K ) valley can be described using a two-band model with a layer-pseudospin magnetic field Δ(r) that has the moiré period. We show that Δ(r) has a topologically nontrivial skyrmion lattice texture in real space, and that the topmost moiré valence bands provide a realization of the Kane-Mele quantum spin-Hall model, i.e., the two-dimensional time-reversal-invariant topological insulator. As a result, the bands narrow at small twist angles, a rich set of broken symmetry insulating states can occur at integer numbers of electrons per moiré cell.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Accurate band alignment at the amorphous Al 2 O 3 /p-Ge(100) interface determined by hard x-ray photoelectron spectroscopy and density functional theory

Here, we have investigated the band alignment at the interface of amorphous aluminum oxide (am-Al 2 O 3 ) grown by atomic layer deposition on p-Ge(100) and the effects of postgrowth annealing using hard x-ray photoelectron spectroscopy and density function theory (DFT). Accurate determination of the valence-band offsets was obtained by comparing the experimentally measured valence bands with DFT-calculated densities of states. The am-Al 2 O 3 density of states calculated from a weighted ensemble of crystalline Al 2 O 3 structures gives excellent agreement with experiment, sufficiently capturing the nonlinear shape of the valence-band edge. We report a valence-band offset of 2.60 ± 0.1 eV for am-Al 2 O 3 /p-Ge, which is reduced by 0.20 eV upon annealing as interfacial GeOx is formed.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Oscillate and renormalize: Fast phonons reshape the Kondo effect in flat-band systems

Here, we examine the interplay between electron correlations and phonons in an Anderson-Holstein impurity model with an Einstein phonon. When the phonons are slow compared to charge fluctuations (frequency 𝜔 0 ≪ 𝑈/2, the onsite Coulomb scale 𝑈/2), we demonstrate analytically that the expected phonon-mediated reduction of interactions is completely suppressed, even in the strong-coupling regime. This suppression arises from the oscillator's inability to respond to rapid charge fluctuations, manifested as a compensation effect between the polaronic cloud and the excited-state phonons associated with valence fluctuations. We identify a frozen mixed valence phase, above a threshold dimensionless electron-phonon coupling 𝛼* when the phonons are slow, where the static phonon cloud locks the impurity into specific valence configurations, potentially explaining the puzzling coexistence of mixed valence behavior and insulating properties in materials like rust. Conversely, when the phonon is fast (𝜔 0 ≳ 𝑈/2), the system exhibits conventional polaronic behavior with renormalized onsite interactions effectively 𝑈 eff due to phonon-mediated attraction, with additional satellite features in the local spectral function due to phonon excitations. Using numerical renormalization group calculations, a fully dynamic renormalization technique, we confirm these behaviors in both regimes. These findings have important implications for strongly correlated systems where phonon energy scales may be comparable to the Coulomb scale, such as in twisted bilayer graphene, necessitating careful consideration of interaction renormalizations in theoretical models.

Anderson impurity model↗
DOE OSTI2020

Experimental determination of electron attenuation lengths in complex materials by means of epitaxial film growth: advantages and challenges

Accurate electron attenuation lengths are of critical importance in using electron spectroscopic methods to quantitatively characterize complex materials. Here we show that analysis of core-level and valence-band x-ray photoelectron spectra excited with monochromatic AlK? x-rays from the substrate and measured as a function of film thickness can be used to determine electron attenuation lengths in epitaxial SrTiO3 films on Ge(001). Closely lattice-matched epitaxial heterojunctions are ideal systems for determining attenuation lengths provided the films grow in a layer-by-layer fashion, leading to atomically flat surfaces, and the buried interfaces are atomically abrupt. In principle, either the rate of attenuation of substrate peak intensities or the rate of increase of film peak intensities can be used for this purpose. However, we find that structural nonuniformities in the films reduce the accuracy of electron attenuation lengths determined from photoelectrons that originate within the films. A more reliable source of information is found in photoelectrons from the substrate which traverse the film. By using the energy dependence of calculated electron attenuation lengths from the NIST database in combination with Ge 3d core and Ge-derived valence band intensities, we determine electron attenuation length as a function of kinetic energy for SrTiO3.

Chambers, Scott A.↗
DOE OSTI2016

Recovery Act - Measurement of Parity Violation in Deep Inelastic Scattering and Studies of the Nucleon Spin Structure at JLab 6 and 11 GeV

The program proposed contains two ingredients which aim to address aspects of two of the three research frontiers of nuclear science as identified in the 2007 NSAC Long Range Plan. The first topic, a test of the current Standard Model, is an ongoing project focusing on measurements of the parity-violating asymmetry in ~e-2H deep inelastic scattering (PVDIS). The PVDIS measurement is complementary to other completed or ongoing low- to medium-energy tests of the Standard Model. As the first, exploratory, step, an experiment using a 6 GeV electron beam will be carried out from October to December 2009 at the Thomas Jefferson National Accelerator Facility (JLab). Meanwhile, a program using the upgraded JLab 11 GeV beam is being planned. The PVDIS program as a whole will provide the first precision data on the axial quark neutral-weak coupling constants. This will either put the current Standard Model to a test that has never been done before, or reveal information on where to look for New Physics beyond the current Standard Model. The PVDIS program will also provide results on hadronic physics effects such as charge symmetry violation. The second part of the proposed program uses spin observables to address the research frontier concerning QCD and structure of the nucleon. An experiment using the JLab 6 GeV beam in 2001 showed that, contrary to predictions from perturbative quantum chromodynamics (pQCD), while the valence up quark’s spin is parallel to the nucleon’s spin, the valence down quark’s spin is not. In order to test the limit of QCD in describing the nucleon spin structure to a region beyond the 6 GeV kinematics, this measurement will be extended to a more energetic, “deeper” valence quark region using the upgraded JLab 11 GeV beam with a polarized 3 He target. Although the two topics of the proposed program appear to focus on different physics, for the upgraded JLab 11 GeV beam, both will utilize a new, yet-to-be-built large acceptance spectrometer, called “SoLID”. Once built, SoLID can be used for other topics such as using PVDIS on a proton target to measure the valence quark distributions, using PVDIS on a polarized target to measure new electro-weak interference structure functions of the nucleon, and semi-inclusive deep inelastic scattering experiments. SoLID will greatly enhance the exploration potential of JLab. The proposed program will first focus on completion of the 6 GeV PVDIS experiment, its data analysis and publishing physics results. This 6 GeV experiment will explore whether precision PVDIS measurements are feasible, will set limits on the hadronic physics effects, and will improve our knowledge on the quark neutral weak couplings, optimally by a factor of six. Starting early 2010, efforts will be spent on preparation for the 11 GeV program, focusing on simulations of SoLID, optimization and construction of the SoLID detector package, and studies of the polarized 3 He target and its improvements. Funding support for the whole program is requested here.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2026

Correlating Surface Processing of Nb Superconducting RF Cavities with the Evolution of Surface Electronic States

Superconducting-radio frequency (RF) cavities provide an efficient way to accelerate particle beams with extremely high acceleration gradients while generating very small power dissipation. The few nanometers of the surface play a critical role in defining the RF performance of superconducting Nb based cavities. Over the past two decades, several pioneering surface treatment and processing methods have emerged, enabling remarkable improvements in superconducting cavity performance by simultaneously achieving high quality factors with increasing maximum acceleration gradients. These processing approaches include chemical polishing, distinct multi-step thermal treatments under ultra-high vacuum (UHV) conditions over low to high temperature regimes, as well as high-temperature treatments under controlled nitrogen atmospheres. Beyond their macroscopic impact on RF performance, these methods produce distinct surface oxide configurations characterized by different valence states, oxide thicknesses, chemical uniformity, and oxygen concentration profiles extending into the near-surface bulk of niobium. In this work, we are trying to understand how the surface-processing methods and the resulting oxide/oxygen profiles affect the electronic structure of surface and the mechanism of superconductivity. Using a combination of X-ray photoemission and X-ray absorption spectroscopies, we investigate how the valence-band structure and the electronic density of states (DoS) near the Fermi level evolve under different surface treatments. By employing tunable photon energies across multiple elemental absorption edges, we use resonant photoemission to disentangle and identify the elemental contributions to specific valence-band features. Our observations show that different surface-processing methods lead to distinct temperature evolutions of the DoS and valence-band states near the Fermi level. Our results suggest variations in different Nb-O orbital hybridizations in distinct processes and point towards the possibility of different underlying mechanisms of superconductivity governed by surface chemistry and oxide configuration. We also correlate these distinct superconducting mechanisms with RF cavity performance, specifically focusing on measured surface resistance, the nature of the Q-slope, and quench fields observed in superconducting RF measurements. These results will enable us to identify the potential limiting factors and relevant controllable parameters that can be further optimized to improve the performance of superconducting RF cavities.

Tripathi, Malvika [Fermilab] (ORCID:00000001989251↗
DOE OSTI2018

Relativistic MR-MP Energy Levels for L-shell Ions of Sulfur and Argon

Calculated level energies for valence and K-vacancy states are given for the ion series S vii–S xiv and Ar ix–Ar xvi. The calculations were performed with the relativistic Multi-Reference Møller–Plesset Perturbation Theory method (MR-MP). The data set includes all the level energies with configurations $1{s}^{2}2{(s,p)}^{q}$, $1{s}^{2}2{(s,p)}^{q-1}{nl}$, $1{s}^{1}2{(s,p)}^{q+1}$, $1{s}^{1}2{(s,p)}^{q}{nl}$, $2{(s,p)}^{q+2}$, and $2{(s,p)}^{q+1}{nl}$, where 1 ≤ q ≤ 8, n ≤ 5, and l ≤ 3. We have compared our results with data from the National Institute of Standards and Technology (NIST) online database and with previous calculations. The average deviation of valence level energies ranges from 0.16 eV in Ne-like ions to 0.01 eV in Li-like ions, demonstrating that the present MR-MP valence level energies are highly accurate. In the case of K-vacancy states, the deviation is generally below 0.3 eV for Li-like S xiv and Ar xvi. The deviation for K-vacancy energies in other L-shell ions (Be-, B-, C-, N-, and O-like Ar ions) is higher but likely because the NIST-recommended values have a higher uncertainty. The data set includes many n = 4 and n = 5 valence and K-vacancy levels in L-shell ions of S and Ar that have not been previously reported. The data can be used for line identification and modeling of L-shell ions of S and Ar in astrophysical and laboratory-generated plasmas, and as energy references in the absence of more accurate laboratory calculations.

79 ASTRONOMY AND ASTROPHYSICS↗