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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 739 records · Page 41
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Thermoelectric power factor enhancement with gate-all-around silicon nanowires

The thermoelectric properties of gate-all-around silicon nanowires (Si NWs) are calculated to determine the potential for significant power factor enhancement. The Boltzmann transport equation and relaxation time approximation are employed to develop an electron transport model used to determine the field-effect mobility, electrical conductivity, Seebeck coefficient, and power factor for Si NWs with cross-sectional areas between 4 nm × 4 nm and 12 nm × 12 nm and a range of gate biases. Electrical conductivity for the gated Si NWs was much higher than that of doped Si due to the lack of ionized impurities and correspondingly greater carrier mobility. A significant increase in electrical conductivity with decreasing Si NW cross-sectional area was also observed due to a large increase in the average carrier density. For all Si NWs, the Seebeck coefficient was lower than that of doped bulk Si due to the different energy dependence between ionized impurity and phonon-mediated scattering processes. This decrease was also confirmed with Seebeck coefficient measurements of multigated Si NWs and n-type Si thin-films. Quantum confinement was also found to increase the Seebeck coefficient for <8 nm × 8 nm Si NWs and also at high charge densities. A maximum power factor of 6.8 × 10{sup −3} W m{sup −1} K{sup −2} was calculated for the 6 nm × 6 nm Si NWs with typical Si/SiO{sub 2} interface roughness, which is 2–3 × those obtained experimentally for bulk Si. The power factor was also found to greatly depend on surface roughness, with a root-mean-square roughness of <0.8 nm necessary for power factor enhancement. An increase in ZT may also be possible if a low thermal conductivity can be obtained with minimal surface roughness.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

Quantum simulator of an open quantum system using superconducting qubits: exciton transport in photosynthetic complexes

Open quantum system approaches are widely used in the description of physical, chemical and biological systems. A famous example is electronic excitation transfer in the initial stage of photosynthesis, where harvested energy is transferred with remarkably high efficiency to a reaction center. This transport is affected by the motion of a structured vibrational environment, which makes simulations on a classical computer very demanding. Here we propose an analog quantum simulator of complex open system dynamics with a precisely engineered quantum environment. Our setup is based on superconducting circuits, a well established technology. As an example, we demonstrate that it is feasible to simulate exciton transport in the Fenna–Matthews–Olson photosynthetic complex. Our approach allows for a controllable single-molecule simulation and the investigation of energy transfer pathways as well as non-Markovian noise-correlation effects.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Observation of trapped light within the radiation continuum

The ability to confine light is important both scientifically and technologically. While many light confinement methods exist, they all achieve confinement with materials or systems that forbid outgoing waves. These systems can be implemented by metallic mirrors, by photonic band-gap materials, by highly disordered media (Anderson localization) and, for a subset of outgoing waves, by translational symmetry (total internal reflection) or by rotational or reflection symmetry. Exceptions to these examples exist only in theoretical proposals. Here we predict and show experimentally that light can be perfectly confined in a patterned dielectric slab, even though outgoing waves are allowed in the surrounding medium. Technically, this is an observation of an ‘embedded eigenvalue’—namely, a bound state in a continuum of radiation modes—that is because of symmetry incompatibility. Such a bound state can exist stably in a general class of geometries in which all of its radiation amplitudes vanish simultaneously as a result of destructive interference. This method to trap electromagnetic waves is also applicable to electronic12 and mechanical waves.

14 SOLAR ENERGY↗
DOE OSTI2014

Black silicon solar thin-film microcells integrating top nanocone structures for broadband and omnidirectional light-trapping

Recently developed classes of monocrystalline silicon solar microcells (μ-cell) can be assembled into modules with characteristics (i.e., mechanically flexible forms, compact concentrator designs, and high-voltage outputs) that would be impossible to achieve using conventional, wafer-based approaches. In this paper, we describe a highly dense, uniform and non-periodic nanocone forest structure of black silicon (bSi) created on optically-thin (30 μm) μ-cells for broadband and omnidirectional light-trapping with a lithography-free and high-throughput plasma texturizing process. With optimized plasma etching conditions and a silicon nitride passivation layer, black silicon μ-cells, when embedded in a polymer waveguiding layer, display dramatic increases of as much as 65.7% in short circuit current, as compared to a bare silicon device. Here, the conversion efficiency increases from 8.1% to 11.5% with a small drop in open circuit voltage and fill factor.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2014

Enhanced Thermal Stability of W-Ni-Al 2 O 3 Cermet-Based Spectrally Selective Solar Absorbers with Tungsten Infrared Reflectors

Solar thermal technologies such as solar hot water and concentrated solar power trough systems rely on spectrally selective solar absorbers. These solar absorbers are designed to efficiently absorb the sunlight while suppressing re-emission of infrared radiation at elevated temperatures. Efforts for the development of such solar absorbers must not only be devoted to their spectral selectivity but also to their thermal stability for high temperature applications. In this work, selective solar absorbers based on two cermet layers are fabricated on mechanically polished stainless steel substrates using a magnetron sputtering technique. The targeted operating temperature is 500–600 °C. A detrimental change in the morphology, phase, and optical properties is observed if the cermet layers are deposited on a stainless steel substrate with a thin nickel adhesion layer, which is due to the diffusion of iron atoms from the stainless steel into the cermet layer forming a FeWO 4 phase. In order to improve thermal stability and reduce the infrared emittance, tungsten is found to be a good candidate for the infrared reflector layer due to its excellent thermal stability and low infrared emittance. Lastly, a stable solar absorptance of ≈0.90 is demonstrated, with a total hemispherical emittance of 0.15 at 500 °C.

14 SOLAR ENERGY↗
DOE OSTI2015

Shape-Controlled Narrow-Gap SnTe Nanostructures: From Nanocubes to Nanorods and Nanowires

The rational design and synthesis of narrow-gap colloidal semiconductor nanocrystals (NCs) is an important step toward the next generation of solution-processable photovoltaics, photodetectors, and thermoelectric devices. SnTe NCs are particularly attractive as a Pb-free alternative to NCs of narrow-gap lead chalcogenides. Previous synthetic efforts on SnTe NCs have focused on spherical nanoparticles. Here we report new strategies for synthesis of SnTe NCs with shapes tunable from highly monodisperse nanocubes, to nanorods (NRs) with variable aspect ratios, and finally to long, straight nanowires (NWs). Reaction at high temperature quickly forms thermodynamically favored nanocubes, but low temperatures lead to elongated particles. Transmission electron microscopy studies of reaction products at various stages of the synthesis reveal that the growth and shape-focusing of monodisperse SnTe nanocubes likely involves interparticle ripening, while directional growth of NRs and NWs may be initiated by particle dimerization via oriented attachment.

36 MATERIALS SCIENCE↗