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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 739 records · Page 41
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Few-femtosecond resolved imaging of laser-driven nanoplasma expansion

Abstract The free expansion of a planar plasma surface is a fundamental non-equilibrium process relevant for various fields but as-yet experimentally still difficult to capture. The significance of the associated spatiotemporal plasma motion ranges from astrophysics and controlled fusion to laser machining, surface high-harmonic generation, plasma mirrors, and laser-driven particle acceleration. Here, we show that x-ray coherent diffractive imaging can surpass existing approaches and enables the quantitative real-time analysis of the sudden free expansion of laser-heated nanoplasmas. For laser-ionized SiO 2 nanospheres, we resolve the formation of the emerging nearly self-similar plasma profile evolution and expose the so far inaccessible shell-wise expansion dynamics including the associated startup delay and rarefaction front velocity. Our results establish time-resolved diffractive imaging as an accurate quantitative diagnostic platform for tracing and characterizing plasma expansion and indicate the possibility to resolve various laser-driven processes including shock formation and wave-breaking phenomena with unprecedented resolution.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

In-situ coating of silicon-rich films on tokamak plasma-facing components with real-time Si material injection

Abstract Experiments have been conducted in the DIII-D tokamak to explore the in-situ growth of silicon-rich layers as a potential technique for real-time replenishment of surface coatings on plasma-facing components (PFCs) during steady-state long-pulse reactor operation. Silicon (Si) pellets of 1 mm diameter were injected into low- and high-confinement (L-mode and H-mode) plasma discharges with densities ranging from 3.9– 7.5 × 10 19 m −3 and input powers ranging from 5.5 to 9 MW. The small Si pellets were delivered with the impurity granule injector at frequencies ranging from 4 to 16 Hz corresponding to mass flow rates of 5–19 mg s −1 (1– 4.2 × 10 20 Si s −1 ) at cumulative amounts of up to 34 mg of Si per five-second discharge. Graphite samples were exposed to the scrape-off layer and private flux region plasmas through the divertor material evaluation system to evaluate the Si deposition on the divertor targets. The Si II emission at the sample correlates with silicon injection and suggests net surface Si-deposition in measurable amounts. Post-mortem analysis showed Si-rich coatings containing silicon oxides, of which SiO 2 is the dominant component. No evidence of SiC was found, which is attributed to low divertor surface temperatures. The in-situ and ex-situ analysis found that Si-rich coatings of at least 0.4–1.2 nm thickness have been deposited at 0.4–0.7 nm s −1 . The technique is estimated to coat a surface area of at least 0.94 m 2 on the outer divertor. These results demonstrate the potential of using real-time material injection to form Si-enriched layers on divertor PFCs during reactor operation.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

A method to observe field-region oxide charge and inter-electrode isolation from CV-characteristics of n-on-p devices

Abstract N-on-psilicon sensors will be utilized in the Compact Muon Solenoid (CMS) detector's tracker and High Granularity Calorimeter (HGCAL) in the High Luminosity upgrade of the Large Hadron Collider (HL-LHC). Among their several advantages in terms of radiation hardness over the traditionalp-on-nsensors in the extreme radiation environment of the HL-LHC are electron collection instead of holes and overlapping maxima of weighting and electric fields at the charge-collecting electrodes. The disadvantage of the multi-channel SiO 2 -passivatedn-on-psensors is the generation of an inversion layer under the Si/SiO 2 -interface by a positive interface-oxide-charge (N ox ) that at high densities can compromise the position resolution by creating a conduction channel between the electrodes. This issue is typically addressed by including additional isolnts (p-stp,p-spray) between n + -electrodes. Focusing on the guard-ring regions ofn-on-psensors where no isolation implants are applied between the electrodes, a capacitance-voltage (CV) characterization study of both 6-inch wafer test diodes and 8-inch HGCAL prototype and pre-series sensors showed a distinct threshold voltage (V th,iso ) in theCV-characteristics of a biased n + -electrode when its enclosing guard-ring was left floating. When reproduced by simulations, the measuredV th,iso was found to contain information on the field-regionN ox and indicate the threshold where the two electrodes become electrically isolated by the influence of the reverse bias voltage. Together with previous studies on the inter-electrode isolation of irradiatedn-on-psensors, the results indicate that position sensitiven-on-psensors without isolation implants may be feasible in future HEP experiments.

Instruments & Instrumentation↗
DOE OSTI2020

In situ laser reflectivity to monitor and control the nucleation and growth of atomically thin 2D materials*

The growth of atomically thin two-dimensional (2D) layered and other quantum materials is typically performed without in situ monitoring or control. Here, a simple laser reflectivity approach is demonstrated to provide in situ control over sub-monolayer thickness and growth kinetics during pulsed laser deposition (PLD) of MoSe 2 layers. First, the general technique is presented with emphasis on designing the maximum sensitivity of the optical contrast through consideration of Fresnel's equations with proper choice of layer thickness, substrate, and laser monitoring wavelength, incidence angle, and laser polarization. Then the 632.8 nm optical reflectivity of MoSe 2 layers on SiO 2 /Si substrates was predicted and compared with in situ monitoring of MoSe 2 growth by PLD under actual growth conditions using a probe HeNe laser beam. The measurements showed high sensitivity and excellent agreement with MoSe 2 surface coverages calculated from atomic resolution STEM analysis of 2D layers deposited in arrested growth experiments. Finally, growth kinetics revealed by these measurements showed sigmoidal nucleation and growth stages in the formation of the 2D MoSe 2 layers that are described by a simple model, indicating the promise of the laser reflectivity technique for in situ monitoring and control of 2D materials deposition.

2D materials↗
DOE OSTI2022

Thickness-dependent phase transition kinetics in lithium-intercalated MoS 2

The phase transitions of two-dimensional (2D) materials are key to the operation of many devices with applications including energy storage and low power electronics. Nanoscale confinement in the form of reduced thickness can modulate the phase transitions of 2D materials both in their thermodynamics and kinetics. Here, using in situ Raman spectroscopy we demonstrate that reducing the thickness of MoS 2 below five layers slows the kinetics of the phase transition from 2H- to 1T'-MoS 2 induced by the electrochemical intercalation of lithium. In this study, we observe that the growth rate of 1T' domains is suppressed in thin MoS 2 supported by SiO 2 , and attribute this growth suppression to increased interfacial effects as the thickness is reduced below 5 nm. In this study, the suppressed kinetics can be reversed by placing MoS 2 on a 2D hexagonal boron nitride ( h BN) support, which readily facilitates the release of strain induced by the phase transition. Additionally, we show that the irreversible conversion of intercalated 1T'-MoS 2 into Li2S and Mo is also thickness-dependent and the stability of 1T'-MoS 2 is significantly increased below five layers, requiring a much higher applied electrochemical potential to break down 1T'-MoS 2 into Li 2 S and Mo nanoclusters.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Cr silicate as a prototype for engineering magnetic phases in air-stable two-dimensional transition-metal silicates

Abstract Identifying environmentally inert, ferromagnetic two-dimensional (2D) materials with high Curie temperatures ( T c ) down to the single layer limit has been an obstacle to fundamental studies of 2D magnetism and application of 2D heterostructures to spin-polarized devices. To address this challenge, the growth, structure and magnetic properties of a 2D Cr-silicate single layer on Pt(111) was investigated experimentally and theoretically. The layer was grown by sequentially depositing SiO and Cr followed by annealing in O 2 . Scanning tunneling microscopy (STM), low-energy electron diffraction (LEED), and low energy electron microscopy all indicated a well-ordered layer that uniformly covered the surface, with STM and LEED indicating that the silicate relaxed to its favored lattice constant. Further experimental characterizations demonstrated that the Cr was nominally 3+ but with a lower electron density than typical trivalent Cr compounds. Comparison with theory identified a Cr 2 Si 2 O 9 structure that resembles a single layer of a dehydrogenated dioctahedral silicate. Magnetic circular dichroism in x-ray absorption spectroscopy revealed a ferromagnetically ordered state up to at least 80 K. Theoretical analysis revealed that the Cr in a dehydrogenated Cr-silicate/Pt(111) is more oxidized than Cr in freestanding Cr 2 Si 2 O 9 H 4 layers. This greater oxidation was found to enhance ferromagnetic coupling and suggests that the magnetism may be tuned by doping. The 2D Cr-silicate is the first member of a broad series of possible layered first-row transition metal silicates with magnetic order; thus, this paper introduces a new platform for investigating 2D ferromagnetism and the development of magnetoelectronic and spintronic devices by stacking 2D atomic layers.

2D materials↗
DOE OSTI2023

Development of local-power-free, remote α -particle detection using optical fibers

We demonstrate the application of fluorescence optical fiber coupled to a telecom grade fiber as a sensor for alpha particles using alpha-specific ZnS(Ag) scintillation materials whose wavelength is down-shifted into a low-loss region of the telecom grade fiber transmission band. Telecom-grade fiber optics offer a solution for sensing alpha radiation in deep repositories and cask storage for radioactive materials due to the stability of SiO 2 under normal environmental conditions and its relative radiation hardness at low radiation doses. Long-term nuclear waste storage facilities require sensors for the detection of leakage of radioactive materials that are maintenance-free, do not require power and can survive with no ‘wear out’ mechanisms for decades. By accomplishing the wavelength transformation, we maximize efficiencies in the detection of α-particles and signal transport and can detect alpha scintillation at distances on the order of >1 km with a sensor that is ~3% efficient and can be easily scaled as a sensor array. This paper describes the construction and testing of the sensor including manufacture of the controlled thickness films, verification of the wavelength shift from 450 to 620 nm and optimization of the sensitivity as a function of thickness. We also model the relative sensitivity of the film as a function of film thickness, and we demonstrate a signal-to-noise ratio of 10 at a range of greater than 1 km.

alpha particles↗
DOE OSTI2025

Oxygen Opacity Measurements at High-Energy-Density Conditions

We present the first benchmark measurements of oxygen opacity at high-energy-density, crucial for understanding stellar interiors. A 3–5−μm thick SiO 2 sample was heated using a Z facility x-ray source, and opacity was measured in the 5–19.5 Å range with multiple spectrometers. The electron temperature and density inferred from Si 𝐾-shell spectra were 148 ± 4 eV and 8.6 ±1.4 × 10 21 cm −3 , respectively. Six experiments showed opacity reproducibility within ±15% and 5%–25% opacity uncertainty. Measured oxygen opacity and seven different opacity models exhibit extraordinary overall agreement. Discrepancies near the H-like photon ionization threshold and in certain spectral lines suggest the need for model refinements.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Temperature-dependent Spectral Emission of Hexagonal Boron Nitride Quantum Emitters on Conductive and Dielectric Substrates

We report a reduction in the linewidth and suppression of spectral diffusion of quantum emitters in hexagonal boron nitride supported on a conductive substrate. In this work, we observe a temperature-dependent reduction in the spectral emission linewidth for CVD-grown and exfoliated crystals on conductive ITO relative to those seen on silicon dioxide (SiO 2 ) substrates. We show that the inhomogeneous linewidth can be suppressed by 45% as a result of using a conductive substrate. We investigate the zero-phonon line profile at temperatures ranging from 4 to 300 K and decompose the effects of thermal broadening and spectral diffusion at each temperature by Voigt fitting. The temperature dependence of homogeneous and inhomogeneous components of the broadening is discussed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

GW band structure of monolayer MoS 2 using the SternheimerGW method and effect of dielectric environment

Monolayers of transition-metal dichalcogenides (TMD) hold great promise as future nanoelectronic and optoelectronic devices. An essential feature for achieving high device performance is the use of suitable supporting substrates, which can affect the electronic and optical properties of these two-dimensional (2D) materials. Here, we perform many-body GW calculations using the SternheimerGW method to investigate the quasiparticle band structure of monolayer MoS 2 subject to an effective dielectric screening model, which is meant to approximately describe substrate polarization in real device applications. We show that, within this model, the dielectric screening has a sizeable effect on the quasiparticle band gap, for example the gap renormalization is as large as 250 meV for MoS 2 with model screening corresponding to SiO 2 . Within the G 0 W 0 approximation, we also find that the inclusion of the effective screening induces a direct band gap, in contrast to the unscreened monolayer. We also find that the dielectric screening induces an enhancement of the carrier effective masses by as much as 27% for holes, shifts plasmon satellites, and redistributes quasiparticle weight. Our results highlight the importance of the dielectric environment in the design of 2D TMD-based devices.

36 MATERIALS SCIENCE↗
DOE OSTI2022

In situ x-ray diffraction study of dynamically compressed α -cristobalite using a dynamic diamond anvil cell

Here we present results of the dynamic compression of α -cristobalite up to a pressure of 106 GPa with the use of the dynamic diamond anvil cell. X-ray diffraction images were recorded at different ramp compression and decompression rates to investigate in situ the high-pressure phase transitions of α -cristobalite. Our results suggest that the pressure onset of the phase transformation of α -cristobalite to cristobalite II, cristobalite X-I, and ultimately to seifertite ( α – PbO 2 type SiO 2 ) is dependent on the applied compression rates and stress conditions of the experiment. Increasing compression rates in general shift the studied phase transitions to higher pressures. Furthermore, our results indicate for single crystals under hydrostatic conditions a suppression of a phase transition from cristobalite X-I to seifertite at pressures of up to 82 GPa.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Dynamic compression of [100] MgF 2 single crystals: Shock-induced polymorphism to highly coordinated structures

AX 2 -type compounds exhibit a rich and complex series of phase transitions under compression. The high-pressure polymorphism of rutile-type AX 2 difluorides can be characterized by a typical sequence from rutile type → Ca Cl 2 type → HP – Pd F 2 type → cotunnite type . Relative to dioxides, the reduced valence and ionic radius of the F – anion in rutile-type MgF 2 (sellaite) results in lowered transition pressures, making it a useful analog for SiO 2 and other dioxides. In this work, MgF 2 single crystals were shock-compressed along the [100] direction to 24 to 120 GPa using plate impact techniques, and wave profiles were measured using laser interferometry. At low stresses (24 to 44 GPa), we observe features consistent with an elastic–inelastic response, followed by a phase transformation. Peak stress-density states in this stress range are consistent with those expected for the modified fluorite-type (HP- PdF 2 ) phase or a related structure. At higher stresses (69 to 91 GPa), we observe a two-wave structure with peak stress-density states consistent with transformation to a denser and likely more highly coordinated phase such as the cotunnite-type structure. Furthermore, at 120 GPa, only a single wave structure is observed, indicating that the wave profile features observed at lower stresses are overdriven.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Pressure-induced polyamorphic transition in CaA l 2 O 4 glass

In situ high-pressure ultrasonic velocity measurements of CaAl 2 O 4 glass reveal abrupt irreversible discontinuities in the elastic wave velocities at ~8–10 GPa. Total structure factor and pair distribution functions measured by synchrotron x-ray diffraction show a rapid change in the intermediate range structure attributed to a rearrangement of calcium ions over this narrow pressure region. Atomistic models obtained from molecular dynamics simulations reveal that this intermediate range structure is explained by a transition of Ca–O void radius distribution from a bimodal distribution with peaks at ~2.1 and ~2.4 Å to a single distribution centered at ~2.1 Å. Further, these abrupt structural changes involving the rapid increase in elastic wave velocity are markedly different to the continuous transformations observed in conventional network-forming glasses, such as SiO 2 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Daily modulation of low-energy nuclear recoils from sub-GeV dark matter

At sufficiently low nuclear recoil energy, the scattering of dark matter (DM) in crystals gives rise to single phonon and multiphonon excitations. In anisotropic crystals, the scattering rate into phonons modulates over each sidereal day as the crystal rotates with respect to the DM wind. This gives a potential avenue for directional detection of DM. The daily modulation for single phonons has previously been calculated. Here we calculate the daily modulation for multiphonon excitations from DM in the mass range 1 MeV–1 GeV. We generalize previous multiphonon calculations, which made an isotropic approximation, and implement results in the DarkELF package. We find daily modulation rates up to 1%–10% for an Al 2 O 3 target and DM mass below 30 MeV, depending on the recoil energies probed. We obtain similar results for SiC, while modulation in Si, GaAs, and SiO 2 is negligible. Published by the American Physical Society 2025

Stratman, Connor↗
DOE OSTI2022

Giant Isotope Effect of Thermal Conductivity in Silicon Nanowires

Isotopically purified semiconductors potentially dissipate heat better than their natural, isotopically mixed counterparts as they have higher thermal conductivity (κ). But the benefit is low for Si at room temperature, amounting to only ~10% higher κ for bulk 28 Si than for bulk natural Si ( nat Si). Here we show that in stark contrast to this bulk behavior, 28 Si (99.92% enriched) nanowires have up to 150% higher κ than nat Si nanowires with similar diameters and surface morphology. Using a first-principles phonon dispersion model, this giant isotope effect is attributed to a mutual enhancement of isotope scattering and surface scattering of phonons in nat Si nanowires, correlated via transmission of phonons to the native amorphous SiO 2 shell. The Letter discovers the strongest isotope effect of κ at room temperature among all materials reported to date and inspires potential applications of isotopically enriched semiconductors in microelectronics.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Cleavable quaternary oxychlorides with high magnetic ordering temperatures

Quaternary oxychlorides derived from Ruddlesden–Popper 3d transition metal oxides offer a route to cleavable crystals with bulk antiferromagnetic ordering temperatures reaching at least 550 K. Here, we study the magnetic, optical, and mechanical behavior of Sr 2 FeO 3 Cl, Ca 2 FeO 3 Cl, Ca 3 Fe 2 O 5 Cl 2 , and Sr 3 Fe 2 O 5 Cl 2 . Through optical absorption measurements, we show that these antiferromagnetic semiconductors have optical band gaps of ≈2.1(1) eV. The magnetic ordering symmetries and temperatures were probed by neutron powder diffraction and Mössbauer spectroscopy on polycrystalline samples, demonstrating Néel temperatures (T N ) near room temperature in the single layer Sr 2 FeO 3 Cl (T N ≈ 311 K) and Ca 2 FeO 3 Cl (T N ≈ 360 K), and the double-layer compound Sr 3 Fe 2 O 5 Cl 2 has T N ≈ 545 K. The high-spin moments of Fe 3+ lie within the basal plane and the magnetic structures are compensated within each magnetic layer and characterized by magnetic propagation vectors k = ($\frac{1}{2}$ $\frac{1}{2}$ 0). Magnetization results demonstrate the quasi-2D nature of the magnetism, with a broad maximum in the susceptibility near 2T N for Sr 2 FeO 3 Cl. Scotch tape tests and mechanical exfoliation onto SiO 2 confirm the micaceous nature of these crystals with cleavage down to a single unit cell (two magnetic layers) achieved for Sr 3 Fe 2 O 5 Cl 2 . In conclusion, this paper highlights strong antiferromagnetic interactions, semiconducting band gaps, and cleavability of quaternary Fe-based oxychlorides and motivates future work on crystals and exfoliated flakes of these and related oxyhalide systems.

36 MATERIALS SCIENCE↗
DOE OSTI2020

IRIXS: a resonant inelastic X-ray scattering instrument dedicated to X-rays in the intermediate energy range

A new resonant inelastic X-ray scattering (RIXS) instrument has been constructed at beamline P01 of the PETRA III synchrotron. This instrument has been named IRIXS (intermediate X-ray energy RIXS) and is dedicated to X-rays in the tender-energy regime (2.5–3.5 keV). The range covers the L 2,3 absorption edges of many of the 4delements (Mo, Tc, Ru, Rh, Pd and Ag), offering a unique opportunity to study their low-energy magnetic and charge excitations. The IRIXS instrument is currently operating at the Ru L 3 -edge (2840 eV) but can be extended to the other 4d elements using the existing concept. The incoming photons are monochromated with a four-bounce Si(111) monochromator, while the energy analysis of the outgoing photons is performed by a diced spherical crystal analyzer featuring (10$\bar{2}$ lattice planes of quartz (SiO 2 ). A total resolution of 100 meV (full width at half-maximum) has been achieved at the Ru L 3 -edge, a number that is in excellent agreement with ray-tracing simulations.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

The structures of mcgovernite and carlfrancisite reconsidered: static disorder or ordered defects and twinning?

Here, the minerals mcgovernite and carlfrancisite possess an extraordinary rhombohedral unit cell [mcgovernite: a = b = 8.206 Å and c = 204.118 Å, with the complex formula unit M 2+ 19 Zn 3 (OH) 21 (AsO 3 )(AsO 4 ) 3 (SiO 4 ) 3 (M = Mn, Mg, Zn); carlfrancisite similar]. Hawthorne [(2018), Mineral. Mag. 82, 1101–1118] reported a single-crystal study using a centrosymmetric model ($R\bar{3}c$) containing disorder on three cationic sites and an AsIII lone-pair site for both mcgovernite and carlfrancisite. A solution of the structure of mcgovernite from high-resolution synchrotron powder diffraction data suggests a reinterpretation of the crystal structures of mcgovernite and carlfrancisite as noncentrosymmetric R3c with ordered planar defects which allows for merohedral twinning.

carlfrancisite↗