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At least 739 records · Page 41

The mass balance of soil evolution on late Quaternary marine terraces, northern California

Mass-balance interpretation of a soil chronosequence provides a means of quantifying elemental addition, removal, and transformation that occur in soils from a flight of marine terraces in northern California. Six soil profiles that range in age from several to 240,000 yr are developed in unconsolidated, sandy-marine, and eolian parent material deposited on bedrock marine platforms. Soil evolution is dominated by (1) open-system depletion of Si, Ca, Mg, K, and Na; (2) open-system enrichment of P in surface soil horizons; (3) relative immobility of Fe and Al; and (4) transformation of Fe, Si, and Al in the parent material to secondary clay minerals and sesquioxides. Net mass losses of bases and Si are generally uniform with depth and substantial, in some cases approaching 100 percent; however, the rate of loss of each element differs markedly, causing the ranking of each by relative abundance to shift with time. Loss of Si from the sand fraction by dissolution and particle-size diminution, from about 100 percent to less than 35 percent over 240 ky, mirrors a similar gain in the silt and clay size fractions. The Fe originally present in the sand fraction decreases from greater than 80 percent to less than 10 percent, whereas the amount of Fe present in the clay and crystalline oxyhydroxide fractions increases to 25 percent and 70 percent, respectively.

Merritts, Dorothy J.↗

Spectroscopic ellipsometric characterization of Si/Si(1-x)Ge(x) strained-layer superlattices

Spectroscopic ellipsometry (SE) was employed to characterize Si/Si(1-x)Ge(x) strained-layer superlattices. An algorithm was developed, using the available optical constants measured at a number of fixed x values of Ge composition, to compute the dielectric function spectrum of Si(1-x)Ge(x) at an arbitrary x value in the spectral range 17 to 5.6 eV. The ellipsometrically determined superlattice thicknesses and alloy compositional fractions were in excellent agreement with results from high-resolution x ray diffraction studies. The silicon surfaces of the superlattices were subjected to a 9:1 HF cleaning prior to the SE measurements. The HF solution removed silicon oxides on the semiconductor surface, and terminated the Si surface with hydrogen-silicon bonds, which were monitored over a period of several weeks, after the HF cleaning, by SE measurements. An equivalent dielectric layer model was established to describe the hydrogen-terminated Si surface layer. The passivated Si surface remained unchanged for greater than 2 h, and very little surface oxidation took place even over 3 to 4 days.

Yao, H.↗

Amorphous silicon thin films: The ultimate lightweight space solar cell

Progress is reported with respect to the development of thin film amorphous (alpha-Si) terrestrial solar cells for space applications. Such devices promise to result in very lightweight, low cost, flexible arrays with superior end of life (EOL) performance. Each alpha-Si cell consists of a tandem arrangement of three very thin p-i-n junctions vapor deposited between film electrodes. The thickness of this entire stack is approximately 2.0 microns, resulting in a device of negligible weight, but one that must be mechanically supported for handling and fabrication into arrays. The stack is therefore presently deposited onto a large area (12 by 13 in), rigid, glass superstrate, 40 mil thick, and preliminary space qualification testing of modules so configured is underway. At the same time, a more advanced version is under development in which the thin film stack is transferred from the glass onto a thin (2.0 mil) polymer substrate to create large arrays that are truly flexible and significantly lighter than either the glassed alpha-Si version or present conventional crystalline technologies. In this paper the key processes for such effective transfer are described. In addition, both glassed (rigid) and unglassed (flexible) alpha-Si cells are studied when integrated with various advanced structures to form lightweight systems. EOL predictions are generated for the case of a 1000 W array in a standard, 10 year geosynchronous (GEO) orbit. Specific powers (W/kg), power densities (W/sq m) and total array costs ($/sq ft) are compared.

Vendura, G. J., Jr.↗

Mass loss in the interacting semi-detached binary delta librae

The interacting Algol-type binary Delta Librae (AOV + G: V) has been observed with the International Ultraviolet Explorer (IUE) satellite. More than fifty high resolution spectra in the far-ultraviolet and mid-ultraviolet spectrum have been analyzed in order to model the mass flow in the Delta Librae system. The resonance lines of Si IV and C IV are present in absorption and vary in strength both secularly and with phase. The radial velocities of the Si IV and C IV absorption lines generally follow the orbital motion of the primary star but deviate by typically a few tens of kilometers per second in the direction of the observer. The presence of Si IV and C IV features indicates the existence of a region considerably hotter than the normal AOV photosphere and, since these lines are present at all phases, this region must be fairly extensive. These results are interpreted in terms of a 'pseudo-photosphere' around the equatorial region of the AOV star, created by matter being accreted from the G-type companion. The widths of the Si IV and C IV absorption features imply that some of the matter lost by the G-star leaves the system entirely.

Mccluskey, George E., Jr.↗

The onset of Wolf-Rayet wind outflow and the nature of the hot component in the symbiotic nova PU Vulpecula

We have analyzed temporal variations in the far ultraviolet He II (1640), Si IV (1393, 1402), and C IV (1548, 1550) line profiles in eight high dispersion, International Ultraviolet Explorer Short Wavelength Prime spectra of the symbiotic nova PU Vul by comparatively examining these profiles on a common velocity scale. We see clear evidence of the onset of a Wolf-Rayet-like wind outflow from the bloated, contracting white dwarf hot component with terminal velocity of approximately equals -550 to -600 km/s. We have quantitatively analyzed the complicated He II (1640) emission region for the first time and show that the discrete absorption features seen in the He II region occur at precisely the same velocites in each spectrum, thus demonstrating that the absorbing source is steady and not affected by any orbital motion. We demonstrate that there is an underlying He II wind emission feature whose true shape is hidden by superposed absorption due to the foreground red giant wind flowing in front of the white dwarf and abscuring the white dwarf's wind outflow. We present synthetic spectra of He II emission behind an absorbing slab with u = 20 km/s, T = 5000 K, and column densities in the range N = 1 x 10(exp 22) and 1 x 10(exp 23)/sq cm which explain these absorptions. Our analysis of the Si IV and C IV resonance doublets, in velocity space, reveal temporal variations in the profile between 1987 and 1991 with the emergence of clear P Cygni profiles in Si IV by 1990. A nebular emission feature in C III 1909 also appears in the most recent spectra (e.g., SW42538H) while it was absent or extremely weak in the earliest spectra (e.g., SW36332H), thus strengthening evidence that the nebular emission, as seen in permitted and semiforbidden lines, intensities in step with the onset of the hot, fast, wind outflow. We also report the first detection of narrow interstellar (circumbinary shell?) absorption lines near -1 km/s, most strongly in Al III (1854, 1862) and Si IV (1392, 1402). We have carried out a rough quantitative analysis of the He II wind emission by using the theoretical He II Wolf-Rayet profiles of Hamann & Schmutz (1987). We obtain a lower limit to the He II net emission equivalent width of approximately 1 A, a hot component temperature in the range 25,000 to 35,000 K, a hot component radius in the range 5 solar radius to 30 solar radius, a maximum wind velocity of approximately equals -600 km/s and a rough upper limit to the mass-loss rate of less than 1 x 10(exp -5) solar mass/yr. To our knowledge, this is the first quantitative wind analysis, albeit crude, to be carried out for the hot component of a symbiotic nova or symbiotic variable.

Sion, Edward M.↗

High-velocity plasma in the transition region of AU Microscopii: Evidence for magnetic reconnection and saturated heating during quiescent and flaring conditions

We analyze high-resolution HST spectra of the dMOe flare star AU Mic, including the profiles of the C IV 1548.2 A, 1550.8 A and Si IV 1393.8 A, 1402.8 A lines obtained with the G160M grating of the Goddard High-Resolution Spectrograph. The quiescent profiles of the C IV and Si IV lines are broad, and not simple Gaussians in shape. Flux in the C IV and Si IV lines, for example, can be measured reliably out to about +/- 200 km/s from line center. Each of the C IV and Si IV profiles can be fitted accurately by two Gaussians (one narrow and the other broad) centered on nearly the same wavelength, with the narrower component accounting for roughly 60% ofthe total integrated flux. The narrow components have similar line widths to those observed in solar active and quiet regions. The broad Gaussian components of the AU Mic line profiles are reminiscent of the broad C IV profiles observed in solar transition region explosive events, which are thought to be associated with emerging magnetic flux regions where field reconnection occurs.

Linsky, Jeffrey L.↗

Micro-mechanics of micro-composites

The Structural Dynamics branch at NASA LaRC is working on developing an active passive mount system for vibration control. Toward this end a system utilizing piezoelectric actuators is currently being utilized. There are limitations to the current system related to space applications under which it is desired to eliminate deformations in the actuators associated with thermal effects. In addition, a material that is readily formable into complex shapes and whose mechanical properties can be optimized with regards to vibration control would be highly desirable. Microcomposite material are currently under study to service these needs. Microcomposite materials are essentially materials in which particles on the scale of microns are bound together with a polyimide (LaRC Si) that has been developed at LaRC. In particular a micro-composite consisting of LaRC Si binder and piezoelectric ceramic particles shows promise in satisfying the needs of the active passive mount project. The LaRC/ Si microcomposite has a unique combination of piezoelectric properties combined with a near zero coefficient of thermal expansion and easy machinability. The goal of this ASEE project is to develop techniques to analytically determine important material properties necessary to characterize the dynamic properties of actuators and mounts made from the LaRC Si / ceramic microcomposite. In particular, a generalized method of cells micromechanics originally developed at NASA Lewis is employed to analyze the microstructural geometry of the microcomposites and predict the overall mechanical properties of the material. A testing program has been established to evaluate and refine the GMC approach to these materials. In addition, a theory of mixtures analysis is being developed that utilizes the GMC micromechanics information to analyze complex behavior of the microcomposite material which has a near zero CTE.

Donovan, Richard P.↗

Characterization of SiGe/Ge heterostructures and graded layers using variable angle spectroscopic ellipsometry

Variable angle spectroscopic ellipsometry (VASE) has been used to characterize Si(x)Ge(1-x)/Ge superlattices (SLs) grown on Ge substrates and thick Si(x)Ge(1-x)/Ge heterostructures grown on Si substrates. Our VASE analysis yielded the thicknesses and alloy compositions of all layers within the optical penetration depth of the surface. In addition, strain effects were observed in the VASE results for layers under both compressive and tensile strain. Results for the SL structures were found to be in close agreement with high resolution x-ray diffraction measurements made on the same samples. The VASE analysis has been upgraded to characterize linearly graded Si(x)Ge(1-x) buffer layers. The algorithm has been used to determine the total thickness of the buffer layer along with the start and end alloy composition by breaking the total thickness into many (typically more than 20) equal layers. Our ellipsometric results for 1 (mu)m buffer layers graded in the ranges 0.7 less than or = x less than or = 1.0, and 0.5 less than or = x less than or = 1.0 are presented, and compare favorably with the nominal values.

Croke, E. T.↗

Measurement of proton production cross sections of (sup 10)Be and (sup 26)Al from elements found in lunar rocks

Cosmic rays penetrate the lunar surface and interact with the lunar rocks to produce both radionuclides and stable nuclides. Production depth profiles for long-lived radionuclides produce in lunar rocks are measured using Accelerator Mass Spectrometry (AMS). For a particular radionuclide these production depth profiles can be interpreted to give an estimate for the solar proton flux over a time period characterized by the half life of the radionuclide under study. This analysis is possible if and only if all the cross sections for the interactions of all cosmic ray particles with all elements found in lunar rocks are well known. In practice, the most important cross sections needed are the proton production cross sections, because 98% of solar cosmic rays and (similar to)87% of galactic cosmic rays are protons. The cross sections for the production of long-lived radionuclides were very difficult to measure before the development of AMS and only in recent years has significant progress been made in determining these essential cross sections. Oxygen and silicon are major constituents of lunar rocks. We have reported already C-14 production cross sections from O and Si for proton energies 25-500 MeV, and O(p,x)(sup 10)Be from 58 160 MeV[6]. Here we present new measurements for the cross sections O(p,x)Be-10,O(p,x)Be-7, Si(p,x)Be-7,Si(p,x)Al-26, and Si(p,x)Na-22 from approximately 30 - 500 MeV.

Sisterson, J. M.↗

Science Instruments for the Advanced X-Ray Astrophysics Facility (AXAF)

The AXAF program has undergone major changes since the Announcement of Opportunity was extended by NASA Headquarters in 1983. The Science Instruments (SI's) for AXAF have also experienced several design changes since they were competitively selected in 1985. Moreover, two separate complementary missions are now being baselined for AXAF; one is designated AXAF-I for imaging and will include the high precision Wolter type I optics, and the other is called AXAF-S for spectroscopy. The resulting less-costly AXAF will still be superior to any previous x-ray observatories. Both missions continue to be managed. AXAF-I contains two focal plane SI's, the High Resolution Camera (HRC), and the AXAF Charge-Coupled Device (CCD) imaging spectrometer (ACIS), as well as the High-Energy Transmission Grating Spectrometer (HETGS) and the Low-Energy Transmission Grating Spectrometer (LETGS). Optics/Cryogenics Division (BECD). AXAF-S features only one focal plane SI, the X-Ray Spectrometer (XRS). The grazing incidence mirrors for this mission are mainly to provide a large collecting area and to concentrate these x-ray photons onto the XRS detector. Precise focusing, although preferred, is of secondary importance. Nested conical foil mirrors are currently baselined; however, replicated imaging optics are being evaluated for collecting efficiency and cost. AXAF-S is scheduled to be launched in late 1999. It has been designated as an MSFC in-house project. In addition to overall management, MSFC is fully responsible for the design, development, integration, and test of the complete AXAF-S observatory, including the XRS which will be furnished by the Goddard Space Flight Center (GSFC). Together, AXAF-I and AXAF-S constitute the third of NASA's series of Great Observatories, joining the Hubble space telescope (HST) and the Gamma-Ray Observatory (GRO) which are already operational. The develop- ment, launch, and operation of the Space InfraRed Telescope Facility (SIRTF) will follow later to complete the Great Observatory series. This paper summarizes the impact these changes have had on the SI's.

Carl E Winkler↗

Microstructure and Phase Stability of Single Crystal NiAl Alloyed with Hf and Zr

Six near stoichiometric, NiAl single-crystal alloys, with 0.05-1.5 at.% of Hf and Zr additions plus Si impurities, were microstructurally analyzed in the as-cast, homogenized, and aged conditions. Hafnium-rich interdendritic regions, containing the Heusler phase (Ni2AlHf), were found in all the as-cast alloys containing Hf. Homogenization heat treatments partially reduced these interdendritic segregated regions. Transmission electron microscopy (TEM) observations of the as-cast and homogenized microstructures revealed the presence of a high density of fine Hf (or Zr) and Si-rich precipitates. These were identified as G-phase, Nil6X6Si7, or as an orthorhombic NiXSi phase, where X is Hf or Zr. Under these conditions the expected Heusler phase (beta') was almost completely absent. The Si responsible for the formation of the G and NiHfSi phases is the result of molten metal reacting with the Si-containing crucible used during the casting process. Varying the cooling rates after homogenization resulted in the refinement or complete suppression of the G and NiHfSi phases. In some of the alloys studied, long-term aging heat treatments resulted in the formation of Heusler precipitates, which were more stable at the aging temperature and coarsened at the expense of the G-phase. In other alloys, long-term aging resulted in the formation of the NiXSi phase. The stability of the Heusler or NiXSi phases can be traced to the reactive element (Hf or Zr) to silicon ratio. If the ratio is high, then the Heusler phase appears stable after long time aging. If the ratio is low, then the NiHfSi phase appears to be the stable phase.

Locci, I. E.↗

Evaluating Possible Heating Mechanisms Using the Transition Region Line Profiles of Late-Type Stars

Our analysis of high-resolution Goddard High-Resolution Spectrograph (GHRS) spectra of late-type stars shows that the Si IV and C IV lines formed near 10(exp 5) K can be decomposed into the sum of two Gaussians, a broad component and a narrow component. We find that the flux contribution of the broad components is correlated with both the C IV and X-ray surface fluxes. For main-sequence stars, the widths of the narrow components suggest subsonic nonthermal velocities, and there appears to be a tight correlation between these nonthermal velocities and stellar surface gravity [xi(sub nc) varies as g(sup (-.68 +/-.07))]. For evolved stars with lower surface gravities, the nonthermal velocities suggested by the narrow components are at or just above the sound speed. Nonthermal velocities computed from the widths of the broad components are always highly supersonic. We propose that the broad components are diagnostics for microflare heating. Turbulent dissipation and Alfven waves are both viable candidates for the narrow component heating mechanism. A solar analog for the broad components might be the 'explosive events' detected by the High-Resolution Telescope and Spectrograph (HRTS) experiment. The broad component we observe for the Si IV lambda 1394 line of alpha Cen A, a star that is nearly identical to the Sun, has a FWHM of 109 +/- 10 km/s and is blueshifted by 9 +/- 3 km/s relative to the narrow component. Both of these properties are consistent with the properties of the solar explosive events. However, the alpha Cen A broad component accounts for 25% +/- 4% of the total Si IV line flux, while solar explosive events are currently thought to account for no more than 5% of the Sun's total transition region emission. This discrepancy must be resolved before the connection between broad components and explosive events can be positively established. In addition to our analysis of the Si IV and C IV lines of many stars, we also provide a more thorough analysis of all of the available GHRS data for alpha Cen A (G2 V) and alpha Cen B (K1 V). We find that the transition region lines of both stars have redshifts almost identical to those observed on the Sun: showing an increase with line formation temperature up to about log T = 5.2 and then a rapid decrease. Using the O IV] lines as density diagnostics, we compute electron densities of log n(sub e) = 9.65 +/- 0.20 and log n(sub e) = 9.50 +/- 0.30 for alpha Cen A and alpha Cen B, respectively.

Wood, Brian E.↗

Far Ultraviolet Imaging from the Image Spacecraft: System Design - 1

Direct imaging of the magnetosphere by the IMAGE spacecraft A,ill be supplemented by observation of the global aurora, the footprint of magnetospheric regions. To assure the simultaneity of these observations and tile measurement of the magnetospheric back-round neutral gas density, the IMAGE satellite instrument complement includes three Far Ultraviolet (FUV) instruments. In tile wavelength region 120-1 90 nm. a downward-viewing aurora imager is only minimally contaminated sunlight, scattered from clouds and ground, and radiance of the aurora observed in a nadir viewing geometry can be observed in the presence of the high-latitude day-low. Tile Wideband Imaging Camera (WIC) will provide broadband ultraviolet images of the aurora for maximum spatial and temporal resolution by imaging the LBH N2 bands of the aurora. The Spectrographic Imager (SI), a monochromatic imager, will image different types of aurora, filtered by wavelength. By measuring the Doppler-shifted Lyman-alpha, the proton-induced component of the aurora will be imaged separately. Finally, the GEO instrument will observe the distribution of the geocoronal emission, which is a measure of the neutral background density source of the charge exchange in the magnetosphere. The FUV instrument complement looks radially outward from the rotating IMAGE satellite and, therefore, it spends only a short time observing tile aurora and the Earth during, each spin. Detailed descriptions of the WIC, Si, GEO, and their individual performance validations are discussed in companion papers. This paper summarizes the system requirements and system design approach taken to satisfy the science requirements. One primary requirement is to maximize photon collection efficiency and use efficiently tile short time available foe exposures. The FUV auroral imagers WIC and SI both have wide fields of view and take data continuously as the auroral region proceeds through the field of view. To minimize data volume, multiple images are taken and electronically co-added by suitably shifting each image to compensate for the spacecraft rotation. In order to minimize resolution loss, the images have to be distortion-corrected in real time foe both WIC and Si prior to co-adding. The distortion correction is accomplished using high-speed look Lip tables that are pre-generated by least square fitting to polynomial functions by the on-orbit processor. The instruments were calibrated individually while on stationary platforms, mostly in vacuum chambers as described in the companion papers. Extensive -round-based testing was performed with visible and near UV simulators mounted oil a rotating platform to estimate their on-orbit performance. The predicted instrument system performance is summarized and some of the preliminary data formats are shown.

Mende, S. B.↗

Contact Angles and Surface Tension of Germanium-Silicon Melts

Precise knowledge of material parameters is more and more important for improving crystal growth processes. Two important parameters are the contact (wetting) angle and the surface tension, determining meniscus shapes and surface-tension driven flows in a variety of methods (Czochralski, EFG, floating-zone, detached Bridgman growth). The sessile drop technique allows the measurement of both parameters simultaneously and has been used to measure the contact angles and the surface tension of Ge(1-x)Si(x) (0 less than or equal to x less than or equal to 1.3) alloys on various substrate materials. Fused quartz, Sapphire, glassy carbon, graphite, SiC, carbon-based aerogel, pyrolytic boron nitride (pBN), AIN, Si3N4, and polycrystalline CVD diamond were used as substrate materials. In addition, the effect of different cleaning procedures and surface treatments on the wetting behavior were investigated. Measurements were performed both under dynamic vacuum and gas atmospheres (argon or forming gas), with temperatures up to 1100 C. In some experiments, the sample was processed for longer times, up to a week, to investigate any changes of the contact angle and/or surface tension due to slow reactions with the substrate. For pure Ge, stable contact angles were found for carbon-based substrates and for pBN, for Ge(1-x)Si(x) only for pBN. The highest wetting angles were found for pBN substrates with angles around 170deg. For the surface tension of Ge, the most reliable values resulted in gamma(T) = (591- 0.077 (T-T(sub m)) 10(exp -3)N/m. The temperature dependence of the surface tension showed similar values for Ge(1-x)Si(x), around -0.08 x 10(exp -3)N/m K, and a compositional dependence of 2.2 x 10(exp -3)N/m at%Si.

Croell, A.↗

Software for Processing Flight and Simulated Data of the ATIC Experiment

ATIC (Advanced Thin Ionization Calorimeter) is a balloon borne experiment designed to measure the cosmic ray composition for elements from hydrogen to iron and their energy spectra from approx.50 GeV to near 100 TeV. It consists of a Si-matrix detector to determine the charge of a CR particle, a scintillator hodoscope for tracking, carbon interaction targets and a fully active BGO calorimeter. ATIC had its first flight from McMurdo, Antarctica from 28/12/2000 to 13/01/2001. The ATIC flight collected approximately 25 million events. A C++-class library for building different programs for processing flight and simulated data of the ATIC balloon experiment is described. This library is compatible with the ROOT-system and includes classes and methods for solving a number of problems as the following: Reading data files in different formats (raw-data format, ROOT-format, ASCII-format, different formats for simulated data); Transferring all these formats to the only inner format of the library; Reconstruction of trajectories of primary particles with BGO calorimeter only. The Monte-Carlo simulations with GEANT code were used to obtain the basic tables for computing error corridors and chi(sup 2)-values for the trajectories. Obtaining error corridors for searching for signal of primary particle in the Si-matrix; Searching for hit of primary particle in the Si-matrix with using of error corridor and other criteria (chi(sup 2)-values, agreement between signals in Si-matrix and in the upper layer of scintillator and others); Determination of charge of primary particle; Determination of energy deposit in BGO calorimeter.

Panov, A. D.↗

Charge Resolution of the Silicon Matrix of the ATIC Experiment

ATIC (Advanced Thin Ionization Calorimeter) is a balloon borne experiment designed to measure the cosmic ray composition for elements from hydrogen to iron and their energy spectra from approx.50 GeV to near 100 TeV. It consists of a Si-matrix detector to determine the charge of a CRT particle, a scintillator hodoscope for tracking, carbon interaction targets and a fully active BGO calorimeter. ATIC had its first flight from McMurdo, Antarctica from 28/12/2000 to 13/01/2001. The ATIC flight collected approximately 25 million events. The silicon matrix of the ATIC spectrometer is designed to resolve individual elements from proton to iron. To provide this resolution careful calibration of each pixel of the silicon matrix is required. Firstly, for each electronic channel of the matrix the pedestal value was subtracted taking into account its drift during the flight. The muon calibration made before the flight was used then to convert electric signals (in ADC channel number) to energy deposits in each pixel. However, the preflight muon calibration was not accurate enough for the purpose, because of lack of statistics in each pixel. To improve charge resolution the correction was done for the position of Helium peak in each pixel during the flight . The other way to set electric signals in electronics channels of the Si-matrix to one scale was correction for electric channel gains accurately measured in laboratory. In these measurements it was found that small different nonlinearities for different channels are present in the region of charge Z > 20. The correction for these non-linearities was not done yet. In linear approximation the method provides practically the same resolution as muon calibration plus He-peak correction. For searching a pixel with the signal of primary particle an indication from the cascade in the calorimeter was used. For this purpose a trajectory was reconstructed using weight centers of energy deposits in BGO layers. The point of intersection of this trajectory with Si-matrix and its RMS was determined. The pixel with maximal signal in 3sigma region was taken as sought. The signal in this pixel was corrected by trajectory zenith angle. The preliminary results on charge resolution of the Si-matrix in the range from protons to iron are presented.

Zatsepin, V. I.↗

Nanoscale Etching and Indentation of Silicon(001) Surface with Carbon Nanotube Tips

The possibility of nanoscale etching and indentation of Si(001)(2x1) surface by (8,0) and (10,10) carbon nanotube tips is demonstrated, for the first time, by classical molecular dynamics simulations employing Tersoff's many-body potential for a mixed C/Si/Ge system. In the nanotube tip barely touching the surface scenario atomistic etching is observed, where as in the nanoindentation scenario nanotube tip penetrates the surface without much hindrance. The results are explained in terms of the relative strength of C-C, C-Si, and Si-Si bonds.

Dzegilenko, Fendor N.↗

High Mobility SiGe/Si Transistor Structures on Sapphire Substrates Using Ion Implantation

High mobility n-type SiGe/Si transistor structures have been fabricated on sapphire substrates by ion implanting phosphorus ions into strained 100 Angstrom thick silicon channels for the first time. The strained Si channels were sandwiched between Si(sub 0.7)Ge(sub 0.3) layers, which, in turn, were deposited on Si(sub 0.7)Ge(sub 0.3) virtual substrates and graded SiGe buffer layers. After the molecular beam epitaxy (MBE) film growth process was completed, ion thick silicon channels implantation and post-annealing were used to introduce donors. The phosphorous ions were preferentially located in the Si channel at a peak concentration of approximately 1x10(exp 18)/cu cm. Room temperature electron mobilities exceeding 750 sq cm/V-sec at carrier densities of 1x10(exp 12)/sq cm were measured. Electron concentration appears to be the key factor that determines mobility, with the highest mobility observed for electron densities in the 1 - 2x10(exp 12)/sq cm range.

Alterovitz, S. A.↗