Calculation of strain compensation thickness for III–V semiconductor quantum dot superlattices
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S.J. Polly↗
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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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The Effects of Protons on Semiconductor Devices
Proton bombardment on transistor circuits at 40 and 440-mev in radiation belt
PROTON ENERGY↗
Proton-neutron damage equivalence in si and ge semiconductors.
Proton-neutron damage correlation in silicon solar cells, showing basic differences in the two damage effects
RADIATION EFFECT↗
Test on 2n2369, npn silicon epitaxial transistors manufactured by fairchild semiconductor
Electric resistivity of carbon resistor material for calculating static response characteristics of carbon bolometer element
N-P-N JUNCTION↗
Semiconductor research
Structure preparation for study of space charge limited current of electrons in silicon
ELECTRON FLUX↗
Use of the si super a /n, alpha/ mg super a-3 and si super a /n, p/ al super a-1 reactions in a semiconductor diode for measuring neutron spectra.
Neutron spectra calculations from pulse height due to neutron interactions with protons and alpha particles in silicon charged particle detector
PARTICLE DETECTOR↗
Radiation damage to semiconductors by high-energy electron and proton radiation Progress report, 15 Mar. - 15 Sep. 1965
Radiation damage in silicon and germanium induced by exposure to high energy electrons and protons
RADIATION EXPOSURE↗
Charged particle radiation damage in semiconductors. XII - Effects of high energy electrons in silicon and silicon solar cells Final technical report, 26 May 1965 - 26 May 1966
Electron bombardment effects on silicon and silicon solar cells
ELECTRON BOMBARDMENT↗
Radiation induced surface effects on selected semiconductor devices.
Increased reverse current and decreased gain in transistors due to Co 60 irradiation
TRANSISTOR↗
New methods for the study of semiconductors novyye puti izucheniya poluprovodnikov
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Ioffe, A. F.↗
Thin film process forms effective electrical contacts on semiconductor crystals
Process makes microscopic, low-resistance electrical contacts on hexagonal n-type silicon carbide crystals used for microelectronic devices. A vacuum deposition of aluminum is etched to expose the bare silicon carbide where the electrical contacts are made. Sputtering alternating layers of tantalum and gold forms the alloy film.
Formigoni, N. P.↗
Process controls introduction of selected impurities into semiconductor wafers
Modified three-step process controls the concentration of lithium diffused as a dopant into the base region of a diffused n-on-p silicon solar cell wafer. Part of the surface layer of the base region of the p-type silicon containing the diffused dopant is removed, prior to redistributing the remaining portion of the dopant into the bulk of the wafer.
Bartholomay, W. C.↗
Design, development and fabrication of prototype semiconductor amplifiers Final report, 17 Mar. 1965 - 16 Mar. 1966
Fabrication of high temperature silicon carbide integrated circuit using junction-gate type field effect transistor as active component
JUNCTION TRANSISTOR↗
Effect of radiation of the stability of silicon nitride and metal nitride semiconductor FET device Quarterly report, 1 Jul. - 1 Oct. 1966
Growing of silicon nitride films, and radiation induced etch rate enhancement in silicon nitride films
RADIATION EFFECT↗
The theory, fabrication and properties of a lithium drifted semiconductor nuclear particle detector with a large sensitive volume
Theory, fabrication, and electric properties of lithium drifted silicon radiation detector with large sensitive volume
ELECTRIC PROPERTY↗
Gamma spectrometry with semiconductor detectors
Lithium drifted germanium and silicon semiconducting detectors compared with thallium activated sodium iodide crystal scintillation counter for gamma spectrometry
SODIUM IODIDE↗
Dimensional analysis of semiconductor phenomena and devices.
Physical electronics formulas tabulated, with solid state physics variables dimensionally coded and resultant nondimensional products cataloged, using computer routine
COMPUTER PROGRAM↗
Electron beam recrystallization of amorphous semiconductor materials
Nucleation and growth of crystalline films of silicon, germanium, and cadmium sulfide on substrates of plastic and glass were investigated. Amorphous films of germanium, silicon, and cadmium sulfide on amorphous substrates of glass and plastic were converted to the crystalline condition by electron bombardment.
Evans, J. C., Jr.↗