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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 739 records · Page 41
All sourcesNASA NTRSDOE OSTI
NASA NTRS2007

Hydrogen Gas Sensors Fabricated on Atomically Flat 4H-SiC Webbed Cantilevers

This paper reports on initial results from the first device tested of a "second generation" Pt-SiC Schottky diode hydrogen gas sensor that: 1) resides on the top of atomically flat 4H-SiC webbed cantilevers, 2) has integrated heater resistor, and 3) is bonded and packaged. With proper selection of heater resistor and sensor diode biases, rapid detection of H2 down to concentrations of 20 ppm was achieved. A stable sensor current gain of 125 +/- 11 standard deviation was demonstrated during 250 hours of cyclic test exposures to 0.5% H2 and N2/air.

Neudeck, Philip G.↗
NASA NTRS2006

SiC Field Effect Transistor Technology Demonstrating Prolonged Stable Operation at 500 C

While there have been numerous reports of short-term transistor operation at 500 degree C or above, these devices have previously not demonstrated sufficient long-term operational durability at 500 degree C to be considered viable for most envisioned applications. This paper reports the development of Silicone Carbi field effect transistors capable of long-term electrical operation at 500 degree C. A 6H-SiC MESFET was packaged and subjected to continuous electrical operation while residing in a 500 degree C oven in oxidizing air atmosphere for over 2400 hours. The transistor gain, saturation current (IDSS), and on-resistance (RDS) changed by less than 20% from initial values throughout the duration of the biased 500 degree C test. Another high-temperature packaged 6H-SiC MESFET was employed to form a simple one-stage high-temperature low-frequency voltage amplifier. This single-stage common-source amplifier demonstrated stable continuous electrical operation (negligible changes to gain and operating biases) for over 600 hours while residing in a 500 degree C air ambient oven. In both cases, increased leakage from annealing of the Schottky gate-to-channel diode was the dominant transistor degradation mechanism that limited the duration of 500 degree C electrical operation.

Neudeck, Philip G.↗
NASA NTRS2017

Packaging Technology for Dielectric-Coating-Less Heavy Ion Radiation Testing of High-Voltage (HV) Electronic Parts

Testing high voltage (HV) electronic parts (greater than 300 V) for sudden event effects (SEE) caused by cosmic rays in the space environment, consisting of energetic heavy-ions, and neutron radiation in the upper atmosphere is a crucial step towards using these parts in spacecraft and aircraft. Due to the nature of cosmic radiation and neutrons, electronic parts are tested for SEE without any packaging and/or shielding over the top of the device. In the case of commercial HV parts, the top of the packaging is etched off and then a thin dielectric coating is placed over the part in order to avoid electrical arcing between the device surface and wire bonds and other components. Even though the effects of the thin dielectric layer on SEE testing can be accounted for, the dielectric layer significantly hinders post testing failure analysis. Replicating the test capability of state-of-the-art packaging while eliminating the need for post radiation test processing of the die surface (that obscures failure analysis) is the goal. To that end, a new packaging concept for HV parts has been developed that requires no dielectric coating over the part. Testing of prototype packages used with Schottky diodes (rated at 1200V) has shown no electrical arcing during testing and leakage currents during reverse bias testing are within the manufactures specifications.

High Voltage↗
NASA NTRS2016

A Discrete Component Low-Noise Preamplifier Readout for a Linear (1x16) SiC Photodiode Array

A compact, low-noise and inexpensive preamplifier circuit has been designed and fabricated to optimally readout a common cathode (1x16) channel 4H-SiC Schottky photodiode array for use in ultraviolet experiments. The readout uses an operational amplifier with 10 pF capacitor in the feedback loop in parallel with a low leakage switch for each of the channels. This circuit configuration allows for reiterative sample, integrate and reset. A sampling technique is given to remove Johnson noise, enabling a femtoampere level readout noise performance. Commercial-off-the-shelf acquisition electronics are used to digitize the preamplifier analogue signals. The data logging acquisition electronics has a different integration circuit, which allows the bandwidth and gain to be independently adjusted. Using this readout, photoresponse measurements across the array between spectral wavelengths 200 nm and 370 nm are made to establish the array pixels external quantum efficiency, current responsivity and noise equivalent power.

low-noise preamplifier↗
NASA NTRS2007

Terahertz local oscillator for the Microwave Limb Sounder on the Aura satellite

The Microwave Limb Sounder on the Aura satellite has a radiometer at 2.5 THz to perform global mapping of OH in the atmosphere. The OH radiometer utilizes two Schottky-diode mixers pumped by an optically pumped THz gas laser local oscillator. The laser was first turned on in space on July 22, 2004, and has performed without issue for more than 30 months. The specifications, design, and modeling of this 2.5 THz laser local oscillator are presented here, along with some of the important design validation and test results.

Pickett, Herbert M.↗
NASA NTRS1998

A Terahertz Grid Frequency Doubler

We present a 144-element terahertz quasi-optical grid frequency doubler. The grid is a planar structure with bow-tie antennas as a unit cell each loaded with a planar Schottky diode.

Terahertz↗
NASA NTRS2021

Light-concentrating microcone array for improving performance of infrared imaging devices

Light-harvesting low-index (n=1.6) microconical arrays are proposed for increasing the sensitivity and the signal-to-noise ratio (SNR) of mid-wave infrared (MWIR) focal plane arrays (FPAs) used in thermal cameras. Numerical modeling showed a 3-D Power enhancement factor ~ 50 in MWIR for 10° tapered microcones with Dt/Db = 60 μm/8μm and h=150μm, where Dt and Db are the top and bottom diameters of microcones, respectively. Such microconical arrays were fabricated in photoresist by using a nanoscribe tool directly on top of the front-illuminated Ni/Si Schottky-barrier, and three-fold enhancement in the photocurrent response was observed. The proposed approach permits increase of the SNR and the operation temperature of the MWIR imaging devices.

Astratov, Vasily N.↗
DOE OSTI2020

Principles of Corrosion in Nuclear Systems: Theory and Analytical Methods

This article is meant to provide the reader with the fundamental electrochemistry necessary to critically evaluate the data and discussions in the articles on corrosion that follow. As such it has two main sections, theory and analytical methods. In the section on theory, a review of half cell reactions, cell potentials and the Nernst equation, and reference electrodes in nuclear systems are discussed. In addition, a review of the thermodynamics from room temperature to the PWR and kinetics of dissolution and passive film formation is also presented. In the section on analytical methods, we review the principles of potentiodynamic polarization, electrochemical impedance spectroscopy, and we introduce a more seldom used technique, Mott-Schottky analysis.

Lillard, R Scott↗
DOE OSTI2021

Computational Fermi Level Engineering and Doping-Type Conversion of Ga2O3 Via Three-Step Processing

Ga2O3 is being actively explored for power electronics, deep-ultraviolet optoelectronics, and other applications due to its ultra-wide bandgap and low projected fabrication cost of large-size and high-quality crystals. N-type doping of Ga2O3 can be achieved and tuned, but p-type doping faces fundamental obstacles due to deep character of acceptor levels and polaron transport of resulting holes. However, successful engineering of Ga2O3 based devices requires critical control of doping density, Fermi level position, and free carrier concentration, providing opportunities for predictive process simulation. We use first-principles defect theory and defect equilibrium calculations to simulate a 3-step growth-annealing-quench protocol for hydrogen assisted Mg doping in Ga2O3, taking into account the hydrogen-oxygen-water gas phase equilibrium. We predict type conversion to a net p-type regime following O-rich annealing after growth under reducing conditions in the presence of H2. This process is similar to the Mg acceptor activation by H removal in GaN. We show that there is an optimal temperature that maximizes the net acceptor density during the equilibrium annealing step for a given Mg doping level. Quenching of non-equilibrium annealed samples then results in a Fermi level EF below mid-gap down to about EV +1.5 eV, creating a significant number of uncompensated neutral MgGa0 acceptors. The resulting free hole concentration in quenched samples is very low (109 – 1012 cm-3) due to deep energy level of these Mg acceptors, but this type converted Ga2O3 material can create a significant built-in field in a p-n junction with an adjoining n-type material. Additionally, the electron concentration is greatly suppressed in such acceptor-doped Ga2O3, which could enable the use as a current blocking layer to fabricate normally-off (enhancement-mode) vertical Ga2O3 based metal-oxide-semiconductor field effect transistors (MOSFETs), and as a guard ring for edge termination in MOSFETs and Schottky barrier diodes (SBDs) with increased breakdown voltage.

CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS,M↗
DOE OSTI2021

University Research to Support the MPACT 2020 Milestone

University research is a strong focus of the Office of Nuclear Energy within the Department of Energy. This research complements existing work in the various program areas and provides support and training for students entering the field. Four university projects have provided support to the Material Protection Accounting and Controls Technologies (MPACT) 2020 milestone focused on safeguards for electrochemical processing facilities. The University of Tennessee Knoxville has examined data fusion of NDA measurements such as Hybrid K-Edge Densitometry and Cyclic Voltammetry. Oregon State University and Virginia Polytechnic Institute have examined the integration of accountancy data with process monitoring data for safeguards. The Ohio State University and the University of Utah have developed a Ni-Pt SiC Schottky diode capable of high temperature alpha spectroscopy for actinide detection of molten salts. Finally, the University of Colorado has developed a key enabling technology for the use of Microcalorimetry.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2022

Power MOSFET and JBSFET cell topologies with superior high frequency figure of merit

A vertical insulated-gate field effect transistor includes a semiconductor substrate and a gate electrode on a first surface thereof. This gate electrode has a plurality of eight (or more) sided openings extending therethrough. Each of these openings has eight (or more) sidewalls, including a first plurality of sidewalls that are flat relative to a center of the opening and second plurality of sidewalls that are either flat or concave relative to the center of the opening. A source electrode is also provided, which extends into the openings. This source electrode may ohmically contact a source region within the semiconductor substrate. If the field effect transistor is a JBSFET, the source electrode may also form a Schottky rectifying junction with a drift region within the semiconductor substrate.

Baliga, Bantval Jayant↗
DOE OSTI2024

FET Junction Temperature Monitoring Using Novel On-Chip Solution

A novel junction temperature monitoring sensor is proposed and experimentally demonstrated for application in MOS-gate power devices. The sensor is created using the polycide gate electrode layer of the devices to create a temperature-sensitive resistor without any additional fabrication steps. The resistor is located on the field oxide with one end grounded at the device reference terminal to isolate it from the device current and voltage transients. It allows in-situ monitoring of the device junction temperature during active circuit operation. The technology has been implemented to monitor the junction temperature of Silicon Carbide Junction Barrier Schottky Field Effect Transistors (SiC JBSFETs) with the bi-directional FET (BiDFET).

Bidirectional switches, SiC bidirectional FET, BiD↗
DOE OSTI2025

Ligand‐Induced Crystallization Control in MAPbBr 3 Hybrid Perovskites for High Quality Nanostructured Films

AbstractControlling the formation of hybrid perovskite thin films is crucial in obtaining high‐performance optoelectronic devices, since factors like morphology and film thickness have a profound impact on a film's functionality. For light‐emitting applications grain sizes in the sub‐micrometer‐range have previously shown enhanced brightness. It is therefore crucial to develop simple, yet reliable methods to produce such films. Here, a solution‐based synthesis protocol for the on‐substrate formation of MAPbBr3 (MA = methylammonium) nanostructures by adding the bifunctional rac‐3‐aminobutyric acid to the precursor solution is reported. This synthesis route improves key optical properties such as photoluminescence quantum yields and life times of excited states by inducing a controlled slow‐down of the film formation and suppressing agglomeration effects. In situ spectroscopy reveals a delayed and slowed down crystallization process, which achieves synthesis of perovskite structures with much reduced defect densities. Further, aggregation can be controlled by the amount of amino acid added and adjusting the synthesis protocol allows to produce cubic crystallites with targeted size from nanometer to micrometer scales. The nanocrystalline MAPbBr3 samples show enhanced amplified spontaneous emission (ASE) intensities, reduced ASE thresholds and purer ASE signals, compared to pristine films, even under intense optical driving, making them promising structures for lasing applications.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Gerischer Electrochemistry Today

Semiconductor photoelectrochemistry is a dynamic and interdisciplinary field at the forefront of research in solar fuels, energy conversion, and catalysis. Here, this Perspective captures the collective insights from the second Gerischer Electrochemistry Today Symposium, held at Colorado State University in Fort Collins, CO, in August 2024, which convened leading researchers, early-career scientists, and industry partners to define the critical next steps for the field. Through interactive sessions, technical talks, panel discussions, and training initiatives─including a Semiconductor Electrochemistry Bootcamp─the symposium emphasized three pillars of advancement: (i) facilitating the exchange of new ideas in semiconductor electrochemistry and charge separation; (ii) fostering the development of future researchers, research topics, and participation in the semiconductor workforce; and (iii) building community. This Energy Focus distills key themes from the meeting and identifies major knowledge gaps in the following areas: mechanisms of charge separation and recombination, role of defects and disorder, dynamic and operando characterization methods, interfacial chemistry and surface passivation, theoretical and modeling limitations, and standardization and benchmarking. The inclusive and collaborative structure of the symposium enabled the generation of this comprehensive report that will serve as a roadmap for fundamental and applied research in the rapidly evolving field of semiconductor electrochemistry over the next decade.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Transient work function gating: A new photoemission regime

We present the theoretical basis for a new photoemission regime, transient work function gating (TWFG), which temporally and energetically gates photoemission and produces near-threshold photoelectrons with thermally limited emittance, percent-level quantum efficiency, and control over temporal coherence. The technique consists of actively gating the work function of a generalized photocathode using a non-ionizing long-wavelength optical field to produce an adiabatic modulation of the carrier density at their surface. We examine TWFG as a means to circumvent the long-standing trade-off between low emittance and high quantum efficiency, untethered to particle source or photocathode specifics. TWFG promises new opportunities in photoemission physics for next generation electron and accelerator-based x-ray photon sources.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗