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At least 739 records · Page 41
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Thermal stability and magnetization switching of composite free layer with perpendicular magnetic anisotropy

We present a micromagnetic study of a ferromagnetically exchange-coupled composite free layer design for perpendicular magnetic tunnel junctions. The thermal stability factor and critical switching current density depend on the exchange coupling strength and effective anisotropy ratio between the sublayers of the composite free layer. The energy barrier increases with an increase of the exchange coupling strength until it reaches a plateau in the strong-coupling limit. An optimal exchange coupling strength exists that leads to the minimal critical switching current and a significant improvement of the figure of merit defined as the ratio between the energy barrier and critical switching current. This behavior is obtained for smaller device sizes with uniform reversal and larger sizes with domain wall reversal.

36 MATERIALS SCIENCE↗
DOE OSTI2018

ABC-model analysis of gain-switched pulse characteristics in low-dimensional semiconductor lasers

The gain-switching dynamics of low-dimensional semiconductor lasers is simulated numerically by using a two-dimensional rate-equation model. Use is also made of the ABC model, where the carrier recombination rate is described by a function of carrier densities including Shockley – Read – Hall (SRH) recombination coefficient A, spontaneous emission coefficient B and Auger recombination coefficient C. Effects of the ABC parameters on the ultrafast gain-switched pulse characteristics with high-density pulse excitation are analysed. It is found that while the parameter A has almost no obvious effects, the parameters B and C have distinctly different effects: B influences significantly the delay time of the gain-switched pulse, while C affects mainly the pulse intensity. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Magnetic state switching in FeGa microstructures

This work demonstrates that magnetoelectric composite heterostructures can be designed at the length scale of 10µms that can be switched from a magnetized state to a vortex state, effectively switching the magnetization off, using electric field induced strain. This was accomplished using thin film magnetoelectric heterostructures of Fe 81.4 Ga 18.6 on a single crystal (011) [Pb(Mg 1/3 Nb 2/3 )O 3 ] 0.68 -[PbTiO 3 ] 0.32 (PMN-32PT) ferroelectric substrate. Here, the heterostructures were tripped from a multi-domain magnetized state to a flux closure vortex state using voltage induced strain in a piezoelectric substrate. FeGa heterostructures were deposited on a Si-substrate for superconducting quantum interference device magnetometry characterization of the magnetic properties. The magnetoelectric coupling of a FeGa continuous film on PMN-32PT was characterized using a magneto optical Kerr effect magnetometer with bi-axial strain gauges, and magnetic multi-domain heterostructures were imaged using x-ray magnetic circular dichroism—photoemission electron microscopy during the transition to the vortex state. The domain structures were modelled using MuMax 3 , a micromagnetics code, and compared with observations. The results provide considerable insight into designing magnetoelectric heterostructures that can be switched from an ‘on’ state to an ‘off’ state using electric field induced strain.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Magnetic triggering — time-resolved characterisation of silicon strip modules in the presence of switching DC-DC converters

Modules for the ATLAS Inner Tracker (ITk) strip tracker include a DC-DC converter circuit glued directly to the silicon sensor which converts the 11 V supplied to the module to the 1.5 V required for the operation of the readout chips. The DC-DC converter unit, consisting of a copper solenoid and custom ASIC, is located directly above the silicon strip sensor and therefore needs to be shielded to protect the sensor from EMI noise created during the operation of the circuit. Despite dedicated shielding, consisting of an aluminium shield box with continuous solder seams encompassing the surface components and a copper layer in the PCB beneath it, module channels connected to sensor strips located beneath the converter circuit were found to show a noise increase. While the DC-DC converter unit causing the underlying EMI noise operates at a frequency of 2 MHz, module characterisation measurements for ITk strip tracker modules are typically performed asynchronously to the DC-DC switching and are therefore averaged over the full range of time bins with respect to the converter frequency. In order to investigate the time dependence of the noise injection relative to the DC-DC switching frequency, a dedicated setup to understand the time-resolved performance change in modules was developed. By using a magnetic field probe to measure the field leaking through the shield box and triggering on its rising edge, data taking could be synchronised with the DC-DC switching. This paper illustrates the concept and setup of such time-resolved performance measurements using magnetic triggering and presents results for the observed effects on signal and noise for ATLAS ITk strip modules from both laboratory and beam tests.

47 OTHER INSTRUMENTATION↗
DOE OSTI2015

EVIDENCE OF MAGNETIC FIELD SWITCH-OFF IN COLLISIONLESS MAGNETIC RECONNECTION

The long-term evolution of large domain particle-in-cell simulations of collisionless magnetic reconnection is investigated following observations that show two possible outcomes for collisionless reconnection: toward a Petschek-like configuration or toward multiple X points. In the present simulation, a mixed scenario develops. At earlier time, plasmoids are emitted, disrupting the formation of Petschek-like structures. Later, an almost stationary monster plasmoid forms, preventing the emission of other plasmoids. A situation reminiscent of Petschek’s switch-off then ensues. Switch-off is obtained through a slow shock/rotational discontinuity compound structure. Two external slow shocks (SS) located at the separatrices reduce the in-plane tangential component of the magnetic field, but not to zero. Two transitions reminiscent of rotational discontinuities (RD) in the internal part of the exhaust then perform the final switch-off. Both the SS and the RD are characterized through analysis of their Rankine–Hugoniot jump conditions. A moderate guide field is used to suppress the development of the firehose instability in the exhaust.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2016

Simultaneous X-ray and radio observations of the radio-mode-switching pulsar PSR B1822$-$09

Here, we report on simultaneous X-ray and radio observations of the radio-mode-switching pulsar PSR B1822–09 with ESA's XMM–Newton and the Westerbork Synthesis Radio Telescope, Giant Metrewave Radio Telescope and Lovell radio telescopes. PSR B1822–09 switches between a radio-bright and radio-quiet mode, and we discovered a relationship between the durations of its modes and a known underlying radio-modulation time-scale within the modes. We discovered X-ray (energies 0.2–1.4 keV) pulsations with a broad sinusoidal pulse, slightly lagging the radio main pulse in phase by 0.094 ± 0.017, with an energy-dependent pulsed fraction varying from ~0.15 at 0.3 keV to ~0.6 at 1 keV. No evidence is found for simultaneous X-ray and radio mode switching. The total X-ray spectrum consists of a cool component (T ~0.96 × 10 6 K, hotspot radius R ~2.0 km) and a hot component (T ~2.2 × 10 6 K, R ~100 m). The hot component can be ascribed to the pulsed emission and the cool component to the unpulsed emission. The high-energy characteristics of PSR B1822–09 resemble those of middle-aged pulsars such as PSR B0656+14, PSR B1055–52 and Geminga, including an indication for pulsed high-energy gamma-ray emission in Fermi Large Area Telescope data. Explanations for the high pulsed fraction seem to require different temperatures at the two poles of this orthogonal rotator, or magnetic anisotropic beaming effects in its strong magnetic field. In our X-ray skymap, we found a harder source at only 5.1 ± 0.5 arcsec from PSR B1822–09, which might be a pulsar wind nebula.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2017

Activator Protein-1: redox switch controlling structure and DNA-binding

The transcription factor, activator protein-1 (AP-1), binds to cognate DNA under redox control; yet, the underlying mechanism has remained enigmatic. A series of crystal structures of the AP-1 FosB/JunD bZIP domains reveal ordered DNA-binding regions in both FosB and JunD even in absence DNA. However, while JunD is competent to bind DNA, the FosB bZIP domain must undergo a large conformational rearrangement that is controlled by a ‘redox switch’ centered on an inter-molecular disulfide bond. Solution studies confirm that FosB/JunD cannot undergo structural transition and bind DNA when the redox-switch is in the ‘OFF’ state, and show that the mid-point redox potential of the redox switch affords it sensitivity to cellular redox homeostasis. The molecular and structural studies presented here thus reveal the mechanism underlying redox-regulation of AP-1 Fos/Jun transcription factors and provide structural insight for therapeutic interventions targeting AP-1 proteins.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2026

Ferroelectric Fractals: Switching Mechanism of Wurtzite AlN

The advent of wurtzite ferroelectrics is enabling new ferroelectric devices for computer memory that have the potential to bypass the von Neumann bottleneck due to their robust polarization and silicon compatibility. However, the atomistic switching mechanism of wurtzites is still undetermined due to the limitations of density functional theory simulation size and experimental temporal and spatial resolution. Thus, physics-informed materials engineering to reduce coercive field and breakdown in these devices has been limited. In this work, the atomistic mechanism of domain wall migration and domain growth in aluminum nitride-based wurtzites is uncovered using molecular dynamics and Monte Carlo simulations. We reveal the anomalous switching mechanism of fast 1D single columns of atoms propagating from a slow-moving 2D fractallike domain wall. We find that the critical nucleus is a single aluminum ion that breaks its bond with one nitrogen and bonds to another nitrogen; this creates a cascade that flips atoms directly only in the same column, due to the extreme locality (sharpness) of the domain walls in wurtzites. We further show how the fractallike shape of the domain wall in the 2D plane breaks assumptions in the Kolmogorov, Avrami, and Ishibashi (KAI) model and leads to the anomalously fast switching in wurtzite structured ferroelectrics.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Kinetics of Domain Switching by Mechanical and Electrical Stimulation in Relaxor-Based Ferroelectrics

Ferroelectric materials have been extensively explored for applications in high-density nonvolatile memory devices because of their ferroelectric-ferroelastic domain-switching behavior under electric loading or mechanical stress. However, the existence of ferroelectric and ferroelastic backswitching would cause significant data loss, which affects the reliability of data storage. In this work, we apply in situ transmission electron microscopy and phase-field modeling to explore the unique ferroelastic domain-switching kinetics and the origin of this in relaxor-based Pb(Mg 1/3 Nb 2/3 )O 3 -33%PbTiO 3 single-crystal pillars under electrical and mechanical stimulations. Results showed that the electric-mechanical hysteresis loop shifted for relaxor-based single-crystal pillars because of the low energy levels of domains in the material and the constraint on the pillars, resulting in various mechanically reversible and irreversible domain-switching states. The phenomenon can potentially be used for advanced bit writing and reading in nonvolatile memories, which effectively overcomes the backswitching problem and broadens the types of ferroelectric materials for nonvolatile memory applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Ferroelectric switching pathways and domain structure of SrBi 2 ⁢(Ta,Nb) 2 ⁢O 9 from first principles

Several families of layered perovskite oxide ferroelectrics exhibit a coupling between polarization and structural order parameters, such as octahedral rotation distortions. This coupling provides opportunities for novel electric field-based manipulation of material properties, and it also stabilizes complex domain patterns and domain-wall vortices. Among layered perovskites with such coupled orders, the Aurivillius-phase oxides SrBi 2 ⁢B 2 ⁢O 9 (B = Ta,Nb) are well-known for their excellent room-temperature ferroelectric performance. This work combines group theoretic analysis with density functional theory calculations to examine the ferroelectric switching processes of SrBi2⁢B2⁢O9. Low-energy two-step ferroelectric switching paths are identified, with polarization reversal facilitated by structural order-parameter rotations. Analysis of the domain structure reveals how the relative energetics of the coupled order parameters translates into a network of several distinct domain-wall types linked by domain-wall vortex structures. Comparisons are made between the ferroelectric switching and domain structure of SrBi 2 ⁢B 2 ⁢O 9 and those of the layered n = 2 Ruddlesden-Popper hybrid improper ferroelectrics. The results provide insight into how ferroelectric properties may be optimized by engineering the complex crystal structures of Aurivillius-phase oxides.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Ferroelectric Switching by the Grounded Scanning Probe Microscopy Tip

The process of polarization reversal by the tip of scanning probe microscope was intensively studied for last two decades. Number of the abnormal switching phenomena was reported by the scientific groups worldwide. In particularly it was experimentally and theoretically shown that slow dynamics of the surface screening controls kinetics of the ferroelectric switching, backswitching and relaxation and presence of the charges carriers on the sample surface and in the sample bulk significantly change polarization reversal dynamics. Here we experimentally demonstrated practical possibility of the history dependent polarization reversal by the grounded SPM tip. This phenomenon was attributed to induction of the slowly dissipating charges into the surface of the grounded tip that enables polarization reversal under the action of the produced electric field. Analytical and numerical electrostatic calculations allow additional insight into nontrivial abnormal switching phenomena reported earlier.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Oxygen-modulated quantum conductance for ultrathin HfO 2 -based memristive switching devices

Memristive switching devices, candidates for resistive random access memory technology, have been shown to switch off through a progression of states with quantized conductance and subsequent noninteger conductance (in terms of conductance quantum G 0 ). We have performed calculations based on density functional theory to model the switching process for a Pt-HfO 2 -Pt structure, involving the movement of one or two oxygen atoms. Oxygen atoms moving within a conductive oxygen vacancy filament act as tunneling barriers, and partition the filament into weakly coupled quantum wells. We show that the low-bias conductance decreases exponentially when one oxygen atom moves away from interface. In conclusion, our results demonstrate the high sensitivity of the device conductance to the position of oxygen atoms.

47 OTHER INSTRUMENTATION↗
DOE OSTI2017

Facilitation of Ferroelectric Switching via Mechanical Manipulation of Hierarchical Nanoscale Domain Structures

Heterogeneous ferroelastic transition that produces hierarchical 90° tetragonal nanodomains via mechanical loading and its effect on facilitating ferroelectric domain switching in relaxor-based ferroelectrics were explored. Combining in situ electron microscopy characterization and phase-field modeling, we reveal the nature of the transition process and discover that the transition lowers by 40% the electrical loading threshold needed for ferroelectric domain switching. Our results advance the fundamental understanding of ferroelectric domain switching behavior.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Synergy between phase transformation and domain switching in two morphotropic phase boundary ferroelectrics

We present that many applications of ferroic materials take advantage of the microstructural redistribution under an external stimulus. Despite extensive studies on the microstructural evolution during both domain switching and phase transformations of high-performance ferroelectrics near morphotropic phase boundaries (MPBs), the synergetic interactions between both leading factors remain unclear. Herein, we have illustrated and discerned the correlative response of phase transformation and domain switching in an archetypical piezoceramic of PbTiO 3 -BiScO 3 using a combination of in situ high-energy synchrotron x-ray diffraction and phase-field simulations. The direct structural evidence and domain development from simulations reveal a significant reversible orientation-dependent emerging phase transformation and enhanced domain switching. Increasingly populated polarization variants aligned with the applied electric field owing to this strong synergistic interaction play an important role in enhancing the piezoelectric performances of MPB ferroelectrics. Lastly, in addition to providing further insight into the microstructures of ferroelectrics, the present results have the potential to guide the design of high-performance materials.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Chirality switching of an antiferromagnetic spiral wall and its effect on magnetic anisotropy

An antiferromagnetic NiO spiral wall in Fe / NiO / C o 0.5 N i 0.5 O / vicinal Ag(001) was created by rotating Fe magnetization and investigated using x-ray magnetic linear dichroism (XMLD). Different from the Mauri's 180° spiral wall, we find that the NiO spiral wall always switches its chirality at ~ 90 ° rotation of the Fe magnetization, and unwinds the spiral wall back to a single domain with a further rotation of the Fe magnetization from 90° to 180°. The effect of this chirality switching on the magnetic anisotropy was studied using rotational magneto-optic Kerr effect (ROTMOKE) on Py / NiO / C o 0.5 N i 0.5 O / vicinal Ag(001). We find that the original Mauri's model has to be corrected by an energy folding due to the chirality switching, which consequently converts the exchange bias from the Mauri's 180° spiral wall into a uniaxial anisotropy and a negative fourfold anisotropy.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

A Simple Control to Reduce Device Over-Voltage Caused by Non-Active Switch Loop in Three-Level ANPC Converters

With the development of wide band-gap (WBG) technology, the switching speed of power semiconductor devices increases, which makes circuits more sensitive to parasitics. For three-level active neutral point clamped (3L-ANPC) converters, the over-voltage caused by additional non-active switch loop can be an issue. This paper analyzes the multiple commutation loops in 3L-ANPC converter and summarizes the impact factors of the device over-voltage. The nonlinearity of the output capacitance of the device can significantly influence the over-voltage. A simple control without introducing additional hardware circuit or complex software algorithm is proposed to attenuate the effect of the nonlinear output capacitance. Multi-pulse test is conducted for a 3L-ANPC converter built with silicon carbide (SiC) MOSFETs. With the proposed control, the testing results show that the peak drain-source voltage of both active and non-active switches is reduced by more than 20% compared to the conventional control.

Gui, Handong↗
DOE OSTI2025

Heat Pipe Enhanced Thermal Management System for GaN Switches in an Integrated Modular Motor Drive for Aircraft Propulsion

This paper presents the process of sizing a heat pipe enhanced thermal management system (TMS) for GaN switches in an integrated modular motor drive (IMMD) powering a 250 kW aircraft propulsion electric motor. A test setup mimicking the TMS and GaN switches assembly is constructed. The condenser chamber of the TMS is modeled in ANSYS Fluent while the GaN switches assembly is modeled in ANSYS Thermal allowing us to verify heat spreader temperature under test conditions and estimate GaN temperatures under test and actual application operating conditions.

DIRECT ENERGY CONVERSION↗
DOE OSTI2018

Performance of High Voltage Bipolar Pulse Generator with Fast Push-Pull Solid-State Switch Modules

Four identical pulse generators (pulsers) provide fast beam deflection in the Low Energy Beam Transport (LEBT) beam chopping system at the Spallation Neutron Source (SNS) Linac. The existing pulsers have become obsolete and need to be replaced to improve overall performance of the chopper system. A new bipolar pulse generator has been designed, and a prototype has been built and tested at the SNS. The generator uses fast push-pull transistor BEHLKE switch modules. It can produce a 1MHz burst of alternate 2.5kV with adjustable pulse widths during the 1-ms macro-pulse at a burst repetition frequency of 60Hz with rise/fall times of less than 40ns into a 100pF capacitive load. The performance enhancements of this new pulser in comparison with existing and previous versions of the pulse generator are discussed in the paper. The pulser can be used in applications requiring a series of bipolar ±3.5kV pulses, or unipolar pulses of positive or negative polarity with amplitude up to 4.5kV and various pulse widths with a minimum of 150ns. The maximum switching frequency, number of pulses, or burst repetition frequency in burst mode is limited by maximum power dissipation in the switches and other components. The features of this new pulser along with the results of timing control adjustments, timing and temperature measurements, and HV full power testing on the test stand are presented.

Peplov, Vladimir↗