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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 739 records · Page 41
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Effect of metal/dielectric substrates on photopolymerization of BITh thin films

Abstract We have studied effects of metal–dielectric substrates on photopolymerization of [2,2ʹ-Bi-1H-indene]-1,1ʹ-dione-3,3ʹ-diyl diheptanoate (BITh) monomer. We synthetized BITh and spin-coated it onto a variety of dielectric, metallic, and metal–dielectric substrates. The films were exposed to radiation of a UV–Visible Xe lamp, causing photo-polymerization of monomer molecules. The magnitude and the rate of the photo-polymerization were monitored by measuring the strength of the ~ 480 nm absorption band, which existed in the monomer but not in the polymer. Expectedly, the rate of photo-polymerization changed nearly linearly with the change of the pumping intensity. In contrast with our early study of photo-degradation of semiconducting polymer P3HT, the rate of photo-polymerization of BITh is getting modestly higher if the monomer film is deposited on top of silver separated from the monomer by a thin insulating MgF 2 layer preventing a charge transfer. This effect is partly due to a constructive interference of the incident and reflected light waves, as well as known in the literature effects of metal/dielectric substrates on a variety of spectroscopic and energy transfer parameters. At the same time, the rate of photopolymerization is getting threefold larger if monomer is deposited on Ag film directly and charge transfer is allowed. Finally, Au substrates cause modest (~ 50%) enhancement of both monomer film absorption and the rate of photo-polymerization.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Active bialkali photocathodes on free-standing graphene substrates

Here, the hexagonal structure of graphene gives rise to the property of gas impermeability, motivating its investigation for a new application: protection of semiconductor photocathodes in electron accelerators. These materials are extremely susceptible to degradation in efficiency through multiple mechanisms related to contamination from the local imperfect vacuum environment of the host photoinjector. Few-layer graphene has been predicted to permit a modified photoemission response of protected photocathode surfaces, and recent experiments of single-layer graphene on copper have begun to confirm these predictions for single crystal metallic photocathodes. Unlike metallic photoemitters, the integration of an ultra-thin graphene barrier film with conventional semiconductor photocathode growth processes is not straightforward. A first step toward addressing this challenge is the growth and characterization of technologically relevant, high quantum efficiency bialkali photocathodes on ultra-thin free-standing graphene substrates. Photocathode growth on free-standing graphene provides the opportunity to integrate these two materials and study their interaction. Specifically, spectral response features and photoemission stability of cathodes grown on graphene substrates are compared to those deposited on established substrates. In addition, we observed an increase of work function for the graphene encapsulated bialkali photocathode surfaces, which is predicted by our calculations. The results provide a unique demonstration of bialkali photocathodes on free-standing substrates, and indicate promise towards our goal of fabricating high-performance graphene encapsulated photocathodes with enhanced lifetime for accelerator applications.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Structure of an engineered multidrug transporter MdfA reveals the molecular basis for substrate recognition

MdfA is a prototypical H + -coupled multidrug transporter that is characterized by extraordinarily broad substrate specificity. The involvement of specific H-bonds in MdfA-drug interactions and the simplicity of altering the substrate specificity of MdfA contradict the promiscuous nature of multidrug recognition, presenting a baffling conundrum. Here we show the X-ray structures of MdfA variant I239T/G354E in complexes with three electrically different ligands, determined at resolutions up to 2.2 Å. Our structures reveal that I239T/G354E interacts with these compounds differently from MdfA and that I239T/G354E possesses two discrete, non-overlapping substrate-binding sites. Our results shed new light on the molecular design of multidrug-binding and protonation sites and highlight the importance of often-neglected, long-range charge-charge interactions in multidrug recognition. Beyond helping to solve the ostensible conundrum of multidrug recognition, our findings suggest the mechanistic difference between substrate and inhibitor for any H + -dependent multidrug transporter, which may open new vistas on curtailing efflux-mediated multidrug resistance.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2025

NADH-bound AIF activates the mitochondrial CHCHD4/MIA40 chaperone by a substrate-mimicry mechanism

Mitochondrial metabolism requires the chaperoned import of disulfide-stabilized proteins via CHCHD4/MIA40 and its enigmatic interaction with oxidoreductase Apoptosis-inducing factor (AIF). By crystallizing human CHCHD4’s AIF-interaction domain with an activated AIF dimer, we uncover how NADH allosterically configures AIF to anchor CHCHD4’s β-hairpin and histidine-helix motifs to the inner mitochondrial membrane. The structure further reveals a similarity between the AIF-interaction domain and recognition sequences of CHCHD4 substrates. NMR and X-ray scattering (SAXS) solution measurements, mutational analyses, and biochemistry show that the substrate-mimicking AIF-interaction domain shields CHCHD4’s redox-sensitive active site. Disrupting this shield critically activates CHCHD4 substrate affinity and chaperone activity. Regulatory-domain sequestration by NADH-activated AIF directly stimulates chaperone binding and folding, revealing how AIF mediates CHCHD4 mitochondrial import. These results establish AIF as an integral component of the metazoan disulfide relay and point to NADH-activated dimeric AIF as an organizational import center for CHCHD4 and its substrates. Importantly, AIF regulation of CHCHD4 directly links AIF’s cellular NAD(H) sensing to CHCHD4 chaperone function, suggesting a mechanism to balance tissue-specific oxidative phosphorylation (OXPHOS) capacity with NADH availability.

Brosey, Chris A↗
DOE OSTI2017

Hole doping, hybridization gaps, and electronic correlation in graphene on a platinum substrate

The interaction between graphene and substrates provides a viable route to enhance the functionality of both materials. Depending on the nature of electronic interaction at the interface, the electron band structure of graphene is strongly influenced, allowing us to make use of the intrinsic properties of graphene or to design additional functionalities in graphene. In this paper, we present an angle-resolved photoemission study on the interaction between graphene and a platinum substrate. The formation of an interface between graphene and platinum leads to a strong deviation in the electronic structure of graphene not only from its freestanding form but also from the behavior observed on typical metals. Finally, the combined study on the experimental and theoretical electron band structure unveils the unique electronic properties of graphene on a platinum substrate, which singles out graphene/platinum as a model system investigating graphene on a metallic substrate with strong interaction.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Nanostructured silicon substrates of nanopore morphology for buffer-layer free nanoheteroepitaxial growth of InP films

To reduce the cost of III–V solar cells, a buffer-layer free method of depositing high-quality III–V thin films onto low-cost silicon nanostructured substrates is proposed that is enabled by stress relaxation due to the nanopore morphology of the silicon substrate. As a proof-of-concept test of the proposed method, the nanoheteroepitaxial deposition of high quality InP thin film is examined. By comparing the deposition of InP (under conditions optimized for InP deposition onto InP substrates) onto nanostructured Si(100) substrates with nanopore and nanopillar morphologies, the morphology of nanopores is found to be preferred for the nanoheteroepitaxial deposition of InP films.

36 MATERIALS SCIENCE↗
DOE OSTI2017

OleA Glu117 is key to condensation of two fatty-acyl coenzyme A substrates in long-chain olefin biosynthesis

In the interest of decreasing dependence on fossil fuels, microbial hydrocarbon biosynthesis pathways are being studied for renewable, tailored production of specialty chemicals and biofuels. One candidate is long-chain olefin biosynthesis, a widespread bacterial pathway that produces waxy hydrocarbons. Found in three- and four-gene clusters, oleABCD encodes the enzymes necessary to produce cis-olefins that differ by alkyl chain length, degree of unsaturation, and alkyl chain branching. The first enzyme in the pathway, OleA, catalyzes the Claisen condensation of two fatty acyl-coenzyme A (CoA) molecules to form a β-keto acid. In this report, the mechanistic role of Xanthomonas campestris OleA Glu117 is investigated through mutant enzymes. Crystal structures were determined for each mutant as well as their complex with the inhibitor cerulenin. Complemented by substrate modeling, these structures suggest that Glu117 aids in substrate positioning for productive carbon–carbon bond formation. Analysis of acyl-CoA substrate hydrolysis shows diminished activity in all mutants. When the active site lacks an acidic residue in the 117 position, OleA cannot form condensed product, demonstrating that Glu117 has a critical role upstream of the essential condensation reaction. Profiling of pH dependence shows that the apparent pKa for Glu117 is affected by mutagenesis. Taken together, we propose that Glu117 is the general base needed to prime condensation via deprotonation of the second, non-covalently bound substrate during turnover. This is the first example of a member of the thiolase superfamily of condensing enzymes to contain an active site base originating from the second monomer of the dimer.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

Resurrection of ancestral effector caspases identifies novel networks for evolution of substrate specificity

Apoptotic caspases evolved with metazoans more than 950 million years ago (MYA), and a series of gene duplications resulted in two subfamilies consisting of initiator and effector caspases. The effector caspase genes (caspases-3, -6, and -7) were subsequently fixed into the Chordata phylum more than 650 MYA when the gene for a common ancestor (CA) duplicated, and the three effector caspases have persisted throughout mammalian evolution. All caspases prefer an aspartate residue at the P1 position of substrates, so each caspase evolved discrete cellular roles through changes in substrate recognition at the P4 position combined with allosteric regulation. We examined the evolution of substrate specificity in caspase-6, which prefers valine at the P4 residue, compared with caspases-3 and -7, which prefer aspartate, by reconstructing the CA of effector caspases (AncCP-Ef1) and the CA of caspase-6 (AncCP-6An). We show that AncCP-Ef1 is a promiscuous enzyme with little distinction between Asp, Val, or Leu at P4. The specificity of caspase-6 was defined early in its evolution, where AncCP-6An demonstrates a preference for Val over Asp at P4. Structures of AncCP-Ef1 and of AncCP-6An show a network of charged amino acids near the S4 pocket that, when combined with repositioning a flexible active site loop, resulted in a more hydrophobic binding pocket in AncCP-6An. The ancestral protein reconstructions show that the caspase-hemoglobinase fold has been conserved for over 650 million years and that only three substitutions in the scaffold are necessary to shift substrate selection toward Val over Asp.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2013

Effect of the substrate orientation on the formation of He-plates in Si

The effect of the crystalline orientation on the implantation-induced strain/stress and on the formation of He-plates was studied by combining high-resolution X-ray scattering and transmission electron microscopy. The highest strains are obtained in (001)-oriented implanted substrates regardless of the fluence and of the channeling effects. The anisotropic properties of the silicon that generate an anisotropic elastic response of the substrate were taken into account to explain these different values of strain. Upon specific thermal annealing, it is shown that the formation of He-plates occurs only in the (001) habit planes regardless of the orientation of the substrates, non-tilted and tilted (001)-, (110)-, and (111)-substrates. Moreover, the distribution of He-plates in the (001) variants was found to be strongly dependent on the angle of the habit plane with the surface and on the intensity of the implantation-induced strain/stress. The implantation-induced stress thus favors the formation of He-plates in specific planes (of low angle with the surface) forming different defect configurations. The nucleation and growth of He-plates are thus discussed with regard to the implantation-induced stress.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Magnetic anisotropy in Fe phthalocyanine film deposited on Si(110) substrate: Standing configuration

Here, we report on the structural and magnetic properties of an Fe phthalocyanine (FePc) thin film deposited on a silicon substrate. The planar FePc molecules order spontaneously in a standing configuration, i.e., with the molecular plane perpendicular to the substrate. The x-ray linear polarized absorption and x-ray magnetic circular dichroism experiments at the Fe-L 2,3 edges at T = 6 K were performed, concluding that at this temperature the film displays magnetic anisotropy with the main easy axis perpendicular to the substrate. This result is explained in terms of the FePc single molecule anisotropy which has its larger moment in the molecule plane. Therefore, the standing configuration in polycrystalline thin films favors statistically that, at the macroscopic array level, the magnetic easy anisotropy axis is normal to the substrate.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Communication: Proton exchange in low temperature co-mixed amorphous H 2 O and D 2 O films: The effect of the underlying Pt(111) and graphene substrates

Isotopic exchange reactions in mixed D 2 O and H 2 O amorphous solid water films were investigated using reflection absorption infrared spectroscopy. Nanoscale films composed of 5% D 2 O in H 2 O were deposited on Pt(111) and graphene covered Pt(111) substrates using simultaneous co-dosing using two molecular beams. At 130 K, we discover that the reaction is strongly dependent on the substrate with the H/D exchange occurring more rapidly on the Pt(111) surface than on graphene. At 140 K, the films eventually crystallize with the final products on the two substrates being primarily HOD on Pt(111) and a mixture of HOD and unreacted D 2 O on graphene. We demonstrate by pre-dosing H 2 and O 2 on Pt(111) that the observed differences in reactivity on the two substrates are likely due to the formation of hydrogen ions at the Pt(111) surface that are not formed on graphene. Once formed the mobile protons move through the ASW overlayer to begin the H/D exchange reaction.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

Structural and electrical characterization of thick GaN layers on Si, GaN, and engineered substrates

A major challenge in gallium nitride (GaN) vertical power devices and other large bandgap materials is the high defect density that compromises the performance, reliability, and yield. Defects are typically nucleated at the heterointerface where there are both lattice and thermal mismatches. In this paper, we report the selective area growth (SAG) of thick GaN on Si and on the newly available Qromis Substrate Technology™ (QST) substrates that lead to a significant reduction of the defect densities to a level that is nearly comparable to that on native substrates by defect annihilation. We performed a parametric study of the electrical properties of the SAG GaN layers by fabricating and characterizing Schottky barrier diodes for SAG GaN layer thicknesses of 5, 10, 15, and 20 μm for GaN-on-Si, GaN-on-QST, and GaN-on-GaN diodes. While thicker layers led to a significant reduction in defect densities and improvement in the diode forward current characteristics, the GaN-on-QST diodes exhibited nearly similar characteristics to the GaN-on-GaN diodes. Further improvement in the device structure and/or SAG growth for GaN-on-Si is needed to achieve a comparable performance as the defect densities in the GaN-on-Si are comparable to that of GaN-on-QST substrates.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Catalytically mediated epitaxy of 3D semiconductors on van der Waals substrates

The formation of well-controlled interfaces between materials of different structure and bonding is a key requirement when developing new devices and functionalities. Of particular importance are epitaxial or low defect density interfaces between two-dimensional materials and three-dimensional semiconductors or metals, where an interfacial structure influences electrical conductivity in field effect and optoelectronic devices, charge transfer for spintronics and catalysis, and proximity-induced superconductivity. Epitaxy and hence well-defined interfacial structure has been demonstrated for several metals on van der Waals-bonded substrates. Semiconductor epitaxy on such substrates has been harder to control, for example during chemical vapor deposition of Si and Ge on graphene. Here, we demonstrate a catalytically mediated het-eroepitaxy approach to achieve epitaxial growth of three-dimensional semiconductors such as Ge and Si on van der Waals-bonded materials such as graphene and hexagonal boron nitride. Epitaxy is "transferred" from the substrate to semiconductor nanocrystals via solid metal nano-crystals that readily align on the substrate and catalyze the formation of aligned nuclei of the semiconductor. In situ transmission electron microscopy allows us to elucidate the reaction pathway for this process and to show that solid metal nanocrystals can catalyze semiconductor growth at a significantly lower temperature than direct chemical vapor deposition or deposition mediated by liquid catalyst droplets. We discuss Ge and Si growth as a model system to explore the details of such hetero-interfacing and its applicability to a broader range of materials.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Anisotropic domains and antiferrodistortive-transition controlled magnetization in epitaxial manganite films on vicinal SrTiO 3 substrates

We studied the microstructural evolution and magnetism of ferroelastic La 0.9 Sr 0.1 MnO 3 (LSMO) epitaxial thin films grown on SrTiO 3 (001) substrates with different miscut angles. The substrate miscut angle plays a critical role in controlling the in-plane magnetic anisotropy. The microscopic origin of such magnetic anisotropy is attributed to the formation of anisotropic stripe domains along the surface step terraces. The magnetization in the LSMO films was found to be selectively modulated by the antiferrodistortive phase transition of the SrTiO 3 substrate. This phenomenon has been qualitatively explained by a strain modified Stoner–Wohlfarth model. We conclude that the magnetization modulation by the SrTiO 3 phase transition depends on h, the ratio of applied magnetic field to the saturation field. Such modulation is only visible with h < 1. The established domain microstructure–anisotropy–magnetism correlation in manganite films can be applied to a variety of complex oxide thin films on vicinal substrates.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Substrate oxygen sponge effect: A parameter for epitaxial manganite thin film growth

The emergent phenomena in complex oxide thin films are strongly tied to the oxygen content, which is often engineered by the oxygen partial pressure during growth. However, such oxygen control by the growth pressure is challenging to synthesize for some oxide films, which requires a subtle control of the oxygen content. A parameter of controlling the oxygen content independent of the growth pressure is desired. Here, we propose a method of controlling the oxygen content of films by engineering the substrate before the growth. The oxide substrate serves as an oxygen sponge, which provides a tunable oxygen environment ranging from oxygen-rich to oxygen-poor for the film growth, depending on the pre-substrate annealing (PSA) conditions. Using manganite as a model system, we demonstrate that this simple PSA method leads to remarkable changes in the structure and physical properties of the as-grown films. Finally, this substrate oxygen sponge effect, driven by the large oxygen concentration gradient at high temperatures, can be applied to explore not only emergent interfacial phenomena but also the growth of a variety of functional oxide thin films and nanocomposites.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Polarization-induced 2D hole gases in pseudomorphic undoped GaN/AlN heterostructures on single-crystal AlN substrates

A high-conductivity two-dimensional (2D) hole gas is the enabler of wide-bandgap p-channel transistors. Compared to commonly used AlN template substrates with high dislocation densities, the recently available single-crystal AlN substrates are promising to boost the speed and power handling capability of p-channel transistors based on GaN/AlN 2D hole gases (2DHGs) thanks to the much lower dislocation densities and the absence of thermal boundary resistance. Using plasma-assisted molecular beam epitaxy, we report the observation of polarization-induced high-density 2DHGs in undoped pseudomorphic GaN/AlN heterostructures on the single-crystal AlN substrates with high structural quality and atomic steps on the surface. The high-density 2DHG persists down to cryogenic temperatures with a record high mobility exceeding 280 cm 2 /V s and a density of 2.2 × 10 13 /cm 2 at 10 K. These results shed light on aspects of improving 2D hole mobilities and indicate significant potential of GaN/AlN 2DHG grown on bulk AlN substrates for future high performance wide-bandgap p-channel transistors.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Growth of nanostructured molybdenum disulfide (MoS 2 ) thin films on a nanohole-patterned substrate using plasma-enhanced atomic layer deposition (ALD)

Nanostructured molybdenum disulfide (MoS 2 ) thin films were grown on a nanohole-patterned silicon substrate using plasma-enhanced atomic layer deposition. A nanoscale hole-patterned silicon substrate was fabricated for the growth of MoS 2 film using the self-assembly-based nanofabrication method. The nanoscale holes can significantly increase the surface area of the substrate while the formation and growth of nanostructures normally start at the surface of the substrate. Hydrogen sulfide (H 2 S) gas was used as the S source in the growth of molybdenum disulfide (MoS 2 ) while molybdenum (V) chloride (MoCl 5 ) powder was used as the Mo source. The MoS 2 film had a stoichiometric ratio of 1 (Mo) to 2 (S), and had peaks of E 1 2g and A 1g , which represent the in-plane and out-plane vibration modes of the Mo–S bond, respectively. It was found that the MoS 2 film grown in the nanoscale hole, especially at the wall of the hole, has more hexagonal-like structures due to the effects of nanoscale space confinement and the nanoscale interface although the film shows an amorphous structure. Post-growth high-temperature annealing ranging from 800 to 900 °C produced local crystalline structures in the film, which are compatible with those reported by other researchers.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Competition and allostery govern substrate selectivity of cyclooxygenase-2

Cyclooxygenase-2 (COX-2) oxygenates arachidonic acid (AA) and its ester analog, 2-arachidonoylglycerol (2-AG), to prostaglandins (PGs) and prostaglandin glyceryl esters (PG-Gs), respectively. While the efficiency of oxygenation of these substrates by COX-2 in vitro is similar, cellular biosynthesis of PGs far exceeds that of PG-Gs. Evidence that the COX enzymes are functional heterodimers suggests that competitive interaction of AA and 2-AG at the allosteric site of COX-2 might result in differential regulation of the oxygenation of the two substrates when both are present. Modulation of AA levels in RAW264.7 macrophages uncovered an inverse correlation between cellular AA levels and PG-G biosynthesis. In vitro kinetic analysis using purified protein demonstrated that the inhibition of 2-AG oxygenation by high concentrations of AA far exceeded the inhibition of AA oxygenation by high concentrations of 2-AG. An unbiased systems-based mechanistic model of the kinetic data revealed that binding of AA or 2-AG at the allosteric site of COX-2 results in a decreased catalytic efficiency of the enzyme toward 2-AG, whereas 2-AG binding at the allosteric site increases COX-2’s efficiency toward AA. The results suggest that substrates interact with COX-2 via multiple potential complexes involving binding to both the catalytic and allosteric sites. Competition among AA and 2-AG for these sites, combined with differential allosteric modulation, gives rise to a complex interplay between the substrates, leading to preferential oxygenation of AA.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗