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At least 739 records · Page 41

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NASA NTRS1991

Silicon carbide, an emerging high temperature semiconductor

In recent years, the aerospace propulsion and space power communities have expressed a growing need for electronic devices that are capable of sustained high temperature operation. Applications for high temperature electronic devices include development instrumentation within engines, engine control, and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Other earth-based applications include deep-well drilling instrumentation, nuclear reactor instrumentation and control, and automotive sensors. To meet the needs of these applications, the High Temperature Electronics Program at the Lewis Research Center is developing silicon carbide (SiC) as a high temperature semiconductor material. Research is focussed on developing the crystal growth, characterization, and device fabrication technologies necessary to produce a family of silicon carbide electronic devices and integrated sensors. The progress made in developing silicon carbide is presented, and the challenges that lie ahead are discussed.

Matus, Lawrence G.↗

NASA NTRS1991

Atomic oxygen interactions with FEP Teflon and silicones on LDEF

The Long Duration Exposure Facility (LDEF) spacecraft represents the first controlled unidirectional exposure of high-fluence atomic oxygen on fluorinated ethylene propylene (FEP Teflon) and silicones. The atomic oxygen erosion yield for FEP Teflon was found to be significantly in excess of previous low fluence orbital data and is an order of magnitude below that of polyimide Kapton. LDEF FEP Teflon erosion yield data as a function of angle of attack is presented. Atomic oxygen interaction with silicon polymers results in crazing of the silicones as well as deposition of dark contaminant oxidation products on adjoining surfaces. Documentation of results and possible mechanistic explanations are presented.

Banks, Bruce A.↗

NASA NTRS1991

Crystallization of the glassy grain boundary phase in silicon nitride ceramics

The role was studied of the intergranular glassy phase in silicon nitride as-processed with yttria as a sintering aid. The microstructure, crystallization, and viscosity of the glassy phase were areas studied. Crystallization of the intergranular glassy phase to more refractory crystalline phases should improve the high temperature mechanical properties of the silicon nitride. The addition of a nucleating agent will increase the rate of crystallization. The measurement of the viscosity of the glassy phase will permit the estimation of the high temperature deformation of the silicon nitride.

Drummond, Charles H., III↗

NASA NTRS1990

Steric stabilization of nonaqueous silicon slips. I - Control of particle agglomeration and packing. II - Pressure casting of powder compacts

The application of steric stabilization to control particle agglomeration and packing of silicon powder in benzene and trichloroethylene is reported. The results provide useful guidelines for controlling unfavorable particle-particle interactions during nonaqueous processing of silicon-based ceramic materials. The application of steric stabilization to the control and improvement of green processing of nonaqueous silicon slips in pressure consolidation is also demonstrated.

Kerkar, Awdhoot V.↗

NASA NTRS1991

Optical waveguide formed by cubic silicon carbide on sapphire substrates

Optical confinement in beta silicon carbide (beta-SiC) thin films on sapphire substrate is demonstrated. Measurements are performed on waveguides formed by the mechanical transfer of thin beta-SiC films to sapphire. Recent results of epitaxial films of SiC on sapphire substrates attest to the technological viability of optoelectronic devices made from silicon carbide. Far-field mode patterns are shown. It is believed that this is the first step in validating a silicon carbide optoelectronic technology.

Tang, Xiao↗

NASA NTRS1990

Silicon dioxide space coatings studied ellipsometrically

Mechanisms of initial oxidation of silicon for the formation of silicon dioxide have been investigated. The oxidation of silicon in an atomic oxigen plasma environment is found to exhibit two distinct and linear oxide growth curves for each of the plasma powers used in ashing (25, 50, and 100 watts). Data obtained indicate that the exponent to the pressure in the oxide growth rate formula changes from 1.4 + or - 0.1 to 0.7 + or - 0.1 as one crosses the critical thickness. These data contradict the theory predicting that this exponent should be 1 for both regimes. The activation energy for oxidation in the zone reaction regime is found to be 0.17 eV, in contrast to the published value of 1-2 eV for thermally grown oxides.

De, Bhola N.↗

NASA NTRS1992

Removing Undesired Fine Powder From Silicon Reactor

Fluidized-bed reactor produces highly pure polycrystalline silicon particles with diameters approximately greater than 400 micrometers. Operates by pyrolysis of silane in reaction zone, which is bed of silicon seed particles fluidized by flow of silane and carrier gas. Above reaction zone, gas mixture flows rapidly enough to entrain silicon powders, but not larger seed and product particles. Entrained particles swept out of reactor. Applicable to other processes such as production of fine metal and ceramic powders where control of sizes of product needed.

Flagella, Robert N.↗

NASA NTRS1991

Elevated temperature mechanical behavior of monolithic and SiC whisker-reinforced silicon nitrides

The mechanical behavior of a 30 volume percent SiC whisker reinforced silicon nitride and a similar monolithic silicon nitride were measured at several temperatures. Measurements included strength, fracture toughness, crack growth resistance, dynamic fatigue susceptibility, post oxidation strength, and creep rate. Strength controlling defects were determined with fractographic analysis. The addition of SiC whiskers to silicon nitride did not substantially improve the strength, fracture toughness, or crack growth resistance. However, the fatigue resistance, post oxidation strength, and creep resistance were diminished by the whisker addition.

Salem, Jonathan A.↗

NASA NTRS1991

Y1Ba2Cu3O(6+delta) growth on thin Y-enhanced SiO2 buffer layers on silicon

SiO2 buffer layers as thin as 2 nm have been developed for use in the growth of Y1Ba2Cu3O(6+delta) thin films on silicon substrates. The SiO2 layers are formed through Y enhancement of silicon oxidation, and are highly stoichiometric. Y1Ba2Cu3O(6+delta) film growth on silicon with thin buffer layers has shown c orientation and Tc0 = 78 K.

Robin, T.↗

NASA NTRS1992

Mechanical properties of 3C silicon carbide

The residual stress and Young's modulus of 3C silicon carbide (SiC) epitaxial films deposited on silicon substrates were measured by load-deflection measurements using suspended SiC diaphragms fabricated with silicon micromachining techniques. The film's residual stress was tensile and averaged 274 MPa while the in-plane Young's modulus averaged 394 GPa. In addition, the bending moment due to the residual stress variation through the thickness of the film was determined by measuring the deflection of free-standing 3C-SiC cantilever beams. The bending moment was in the range of 2.6 x 10 exp -8 -4.2 x 10 exp-8 N m.

Tong, Lijun↗

NASA NTRS1992

Growth of a delta-doped silicon layer by molecular beam epitaxy on a charge-coupled device for reflection-limited ultraviolet quantum efficiency

Low-temperature silicon molecular beam epitaxy is used to grow a delta-doped silicon layer on a fully processed charge-coupled device (CCD). The measured quantum efficiency of the delta-doped backside-thinned CCD is in agreement with the reflection limit for light incident on the back surface in the spectral range of 260-600 nm. The 2.5 nm silicon layer, grown at 450 C, contained a boron delta-layer with surface density of about 2 x 10 exp 14/sq cm. Passivation of the surface was done by steam oxidation of a nominally undoped 1.5 nm Si cap layer. The UV quantum efficiency was found to be uniform and stable with respect to thermal cycling and illumination conditions.

Hoenk, Michael E.↗

NASA NTRS1993

Microwave characterization of slotline on high resistivity silicon for antenna feed network

Conventional silicon wafers have low resistivity and consequently unacceptably high value of dielectric attenuation constant. Microwave circuits for phased array antenna systems fabricated on these wafers therefore have low efficiency. By choosing a silicon substrate with sufficiently high resistivity it is possible to make the dielectric attenuation constant of the interconnecting microwave transmission lines approach those of GaAs or InP. In order for this to be possible, the transmission lines must be characterized. In this presentation, the effective dielectric constant (epsilon sub eff) and attenuation constant (alpha) of a slotline on high resistivity (5000 to 10 000 ohm-cm) silicon wafer will be discussed. The epsilon sub eff and alpha are determined from the measured resonant frequencies and the corresponding insertion loss of a slotline ring resonator. The results for slotline will be compared with microstrip line and coplanar waveguide.

Simons, Rainee N.↗

NASA NTRS1992

Indentation flaw formation and strength response of silicon nitride ceramics at low indentation loads

The configuration and the strength response of indentation flaws in silicon nitrides are described as a function of indentation loads primarily near the threshold level. Test materials under consideration include 30 vol percent SiC whisker-reinforced composite silicon nitride and similar monolithic silicon nitride. The results of strength testing show that, at indentation loads less than or equal to 1.96, a number of the specimens fail from the intrinsic flaws of the materials rather than from the indent sites, causing a distinct trend to reach a plateau, at a level corresponding to the as-received strength of the material. The ratio of the mirror constant to the fracture toughness for the composite and monolithic materials is found to be 1.44 and 1.51, respectively.

Choi, Sung R.↗

NASA NTRS1992

Silicon isotopic composition in large meteoritic SiC particles and Na-22 origin of Ne-22

Large SiC particles extracted from acid-insoluble residues of carbonaceous chondrites are isotopically anomalous in both silicon and carbon and contain isotopically extreme noble gases. These particles are thought to have originated in mass outflows from red giant stars and to have existed in the interstellar medium at the time the solar system formed from an interstellar cloud. Calculations show that the silicon isotope correlations in those large SiC particles can be generated only in the most massive carbon stars. Consequently, the almost pure Ne-22 in those particles must be interpreted as the condensation of radioactive Na-22 in the particles as they flowed away from the stars. The Na-22 is produced through proton capture by Ne-21 at the base of the surface convection zone. Ne-22 does not exist abundantly in helium shells hot enough to burn magnesium, which is necessary to establish the measured silicon isotopic composition.

Brown, Lawrence E.↗

NASA NTRS1992

The effect of fiber microstructure on evolution of residual stresses in silicon carbide/titanium aluminide composites

This paper examines the effect of the morphology of the SCS6 silicon carbide fiber on the evolution of residual stresses in SiC/Ti composites. A micromechanics model based on the concentric cylinder concept is presented which is used to calculate residual stresses in a SiC/Ti composite during axisymmetric cooling by a spatially uniform temperature change. The silicon carbide fiber is modeled as a layered material with five distinct transversely isotropic and orthotropic, elastic layers, whereas the titanium matrix is taken to be isotropic, with temperature-dependent elastoplastic properties. The results arc compared with those obtained based on the assumption that the silicon carbide fiber is isotropic and homogeneous.

Pindera, Marek-Jerzy↗

NASA NTRS1983

Hybrid silicon focal plane arrays

Applications were demonstrated for hybrid silicon infrared CCD arrays in both ground and space based astronomical instrumentation. The primary goal was to provide a point of departure for both instrument designs and further development of the device. The test device is an indium doped silicon (Si:In) version of the 32 x 32 Rockwell 30331 surface channel hybrid silicon IRCCD. The device structure and a typical instrument interface are shown. The motivation for further study is presented along with a discussion in detail of some of the issues.

Pommerrenig, D.↗

NASA NTRS1994

Micromachined Silicon Waveguides

Components that handle millimeter and submillimeter wavelengths fabricated conveniently. Micromachining rectangular waveguide involves standard steps of masking, etching, and deposition of metal on silicon. Parts made assembled into half-waveguide and finally into full waveguide. Silicon-micromachining approach enables simultaneous fabrication of several versions of waveguide, with variations in critical parameter, on single wafer of silicon. Performances of versions compared and optimized more quickly and at lower cost than is possible if different versions are fabricated sequentially, by conventional machining techniques.

Mcgrath, William R.↗

NASA NTRS1993

Response of silicon solar cell to pulsed laser illumination

The response of silicon solar cell(s) to pulsed laser illumination is discussed. The motivation was due to the interest of Earth to space/Moon power beaming applications. When this work began, it was not known if solar cells would respond to laser light with pulse lengths in the nanosecond range and a repetition frequency in the kHz range. This is because the laser pulse would be shorter than the minority carrier lifetime of silicon. A 20-nanosecond (ns) full width half max (FWHM) pulse from an aluminum-gallium/arsenide (Al-Ga-As) diode laser was used to illuminate silicon solar cells at a wavelength of 885 nanometers (nm). Using a high-speed digital oscilloscope, the response of the solar cells to individual pulses across various resistive loads was observed and recorded.

Willowby, D.↗