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At least 739 records · Page 41
All sourcesNASA NTRSDOE OSTI
NASA NTRS2009

Performance of the THS4302 and the Class V Radiation-Tolerant THS4304-SP Silicon Germanium Wideband Amplifiers at Extreme Temperatures

This report discusses the performance of silicon germanium, wideband gain amplifiers under extreme temperatures. The investigated devices include Texas Instruments THS4304-SP and THS4302 amplifiers. Both chips are manufactured using the BiCom3 process based on silicon germanium technology along with silicon-on-insulator (SOI) buried oxide layers. The THS4304-SP device was chosen because it is a Class V radiation-tolerant (150 kRad, TID silicon), voltage-feedback operational amplifier designed for use in high-speed analog signal applications and is very desirable for NASA missions. It operates with a single 5 V power supply [1]. It comes in a 10-pin ceramic flatpack package, and it provides balanced inputs, low offset voltage and offset current, and high common mode rejection ratio. The fixed-gain THS4302 chip, which comes in a 16-pin leadless package, offers high bandwidth, high slew rate, low noise, and low distortion [2]. Such features have made the amplifier useful in a number of applications such as wideband signal processing, wireless transceivers, intermediate frequency (IF) amplifier, analog-to-digital converter (ADC) preamplifier, digital-to-analog converter (DAC) output buffer, measurement instrumentation, and medical and industrial imaging.

Patterson, Richard L.↗
NASA NTRS2009

Status of Reconstruction of Fragmented Diamond-on-Silicon Collector From Genesis Spacecraft Solar Wind Concentrator

In addition to passive solar wind collector surfaces, the Genesis Discovery Mission science canister had on board an electrostatic concave mirror for concentrating the solar wind ions, known as the concentrator . The 30-mm-radius collector focal point (the target) was comprised of 4 quadrants: two of single crystal SiC, one of polycrystalline 13C diamond and one of diamond-like-carbon (DLC) on a silicon substrate. [DLC-on-silicon is also sometimes referenced as Diamond-on-silicon, DOS.] Three of target quadrants survived the hard landing intact, but the DLC-on-silicon quadrant fractured into numerous pieces (Fig. 1). This abstract reports the status of identifying the DLC target fragments and reconstructing their original orientation.

Rodriquez, Melissa C.↗
NASA NTRS2010

Effects of Temperature on the Performance and Stability of Recent COTS Silicon Oscillators

Silicon oscillators have lately emerged to serve as potential replacement for crystal and ceramic resonators to provide timing and clock signals in electronic systems. These semiconductor-based devices, including those that are based on MEMS technology, are reported to be resistant to vibration and shock (an important criteria for systems to be deployed in space), immune to EMI, consume very low current, require few or no external components, and cover a wide range of frequency for analog and digital circuits. In this work, the performance of five recently-developed COTS silicon oscillator chips from different manufacturers was determined within a temperature range that extended beyond the individual specified range of operation. In addition, restart capability at extreme temperatures, i.e. power switched on while the device was soaking at extreme (hot or cold) temperature, and the effects of thermal cycling under a wide temperature range on the operation of these silicon oscillators were also investigated. Performance characterization of each oscillator was obtained in terms of its output frequency, duty cycle, rise and fall times, and supply current at specific test temperatures. The five different oscillators tested operated beyond their specified temperature region, with some displaying excellent stability throughout the whole test temperature range. Others experienced some instability at certain temperature test points as evidenced by fluctuation in the output frequency. Recovery from temperature-induced changes took place when excessive temperatures were removed. It should also be pointed out that all oscillators were able to restart at the extreme test temperatures and to withstand the limited thermal cycling without undergoing any significant changes in their characteristics. In addition, no physical damage was observed in the packaging material of any of these silicon oscillators due to extreme temperature exposure and thermal cycling. It is recommended that additional and more comprehensive testing under long term cycling be carried out to fully establish the reliability of these devices and to determine their suitability for use in space exploration missions under extreme temperature conditions.

Patterson, Richard L.↗
NASA NTRS2004

Silicone-Rubber Microvalves Actuated by Paraffin

Microvalves containing silicone-rubber seals actuated by heating and cooling of paraffin have been proposed for development as integral components of microfluidic systems. In comparison with other microvalves actuated by various means (electrostatic, electromagnetic, piezoelectric, pneumatic, and others), the proposed valves (1) would contain simpler structures that could be fabricated at lower cost and (2) could be actuated by simpler (and thus less expensive) control systems. Each valve according to the proposal would include a flow channel bounded on one side by a flat surface and on the other side by a curved surface defined by an arched-cross-section, elastic seal made of silicone rubber [polydimethylsilane (PDMS)]. The seal would be sized and shaped so that the elasticity of the PDMS would hold the channel open except when the seal was pressed down onto the flat surface to close the channel. The principle of actuation would exploit the fact that upon melting or freezing, the volume of a typical paraffin increases or decreases, respectively, by about 15 percent. In a valve according to the proposal, the seal face opposite that of the channel would be in contact with a piston-like plug of paraffin. In the case of a valve designed to be normally open at ambient temperature, one would use a paraffin having a melting temperature above ambient. The seal would be pushed against the flat surface to close the channel by heating the paraffin above its melting temperature. In the case of a valve designed to be normally closed at ambient temperature, one would use a paraffin having a melting temperature below ambient. The seal would be allowed to spring away from the flat surface to open the channel by cooling the paraffin below its melting temperature. The availability of paraffins that have melting temperatures from 70 to +80 C should make it possible to develop a variety of normally closed and normally open valves. The figure depicts examples of prototype normally open and normally closed valves according to the proposal. In each valve, an arch cross section defining a channel having dimensions of the order of tens of micrometers would be formed in a silicone-rubber sheet about 40 m thick. The silicone rubber sheet would be hermetically sealed to a lower glass plate that would define the sealing surface and to an upper glass plate containing a well. The well would be filled with paraffin and capped with a rigid restraining layer of epoxy. In the normally open valve, the paraffin would have a melting temperature above ambient (e.g., 40 C) and the wall of the well would be coated with a layer of titanium that would serve as an electric heater. In the normally closed valve, the paraffin would have a melting temperature below ambient (e.g.-5 C). Instead of a heater in the well, the normally closed valve would include a thermoelectric cooler on top of the epoxy cap.

Svelha, Danielle↗
NASA NTRS2011

Cryo-Etched Black Silicon for Use as Optical Black

Stray light reflected from the surface of imaging spectrometer components in particular, the spectrometer slit degrade the image quality. A technique has been developed for rapid, uniform, and cost-effective black silicon formation based on inductively coupled plasma (ICP) etching at cryogenic temperatures. Recent measurements show less than 1-percent total reflectance from 350 2,500 nm of doped black silicon formed in this way, making it an excellent option for texturing of component surfaces for reduction of stray light. Oxygen combines with SF6 + Si etch byproducts to form a passivation layer atop the Si when the etch is performed at cryogenic temperatures. Excess flow of oxygen results in micromasking and the formation of black silicon. The process is repeatable and reliable, and provides control over etch depth and sidewall profile. Density of the needles can be controlled to some extent. Regions to be textured can be patterned lithographically. Adhesion is not an issue as the nanotips are part of the underlying substrate. This is in contrast to surface growth/deposition techniques such as carbon nanotubes (CNTs). The black Si surface is compatible with wet processing, including processing with solvents, the textured surface is completely inorganic, and it does not outgas. In radiometry applications, optical absorbers are often constructed using gold black or CNTs. This black silicon technology is an improvement for these types of applications.

Yee, Karl Y.↗
NASA NTRS2012

Fundamental Investigation of Silicon Anode in Lithium-Ion Cells

Silicon is a promising and attractive anode material to replace graphite for high capacity lithium ion cells since its theoretical capacity is ~10 times of graphite and it is an abundant element on Earth. However, there are challenges associated with using silicon as Li-ion anode due to the significant first cycle irreversible capacity loss and subsequent rapid capacity fade during cycling. Understanding solid electrolyte interphase (SEI) formation along with the lithium ion insertion/de-insertion kinetics in silicon anodes will provide greater insight into overcoming these issues, thereby lead to better cycle performance. In this paper, cyclic voltammetry and electrochemical impedance spectroscopy are used to build a fundamental understanding of silicon anodes. The results show that it is difficult to form the SEI film on the surface of a Si anode during the first cycle; the lithium ion insertion and de-insertion kinetics for Si are sluggish, and the cell internal resistance changes with the state of lithiation after electrochemical cycling. These results are compared with those for extensively studied graphite anodes. The understanding gained from this study will help to design better Si anodes, and the combination of cyclic voltammetry with impedance spectroscopy provides a useful tool to evaluate the effectiveness of the design modifications on the Si anode performance.

Wu, James J.↗
NASA NTRS2012

Fabrication of Silicon Backshorts with Improved Out-of-Band Rejection for Waveguide-Coupled Superconducting Detectors

The Cosmology Large Angular Scale Surveyor (CLASS) is a ground-based instrument that will measure the polarization of the cosmic microqave background to search for gravitational waves form a posited epoch of inflation early in the universe's history. This measurement will require integration of superconducting transition-edge sensors with microwave waveguide inputs with good conrol of systematic errors, such as unwanted coupling to stray signals at frequencies outside of a precisely defined microwave band. To address these needs we will present work on the fabrication of silicon quarter-wave backshorts for the CLASS 40GHz focal plane. The 40GHz backshort consists of three degeneratively doped silicon wafers. Two spacer wafers are micromachined with through wafer vins to provide a 2.0mm long square waveguide. The third wafer acts as the backshort cap. The three wafers are bonded at the wafer level by Au-Au thermal compression bonding then aligned and flip chip bonded to the CLASS detector at the chip level. The micromachining techniques used have been optimized to create high aspect ratio waveguides, silicon pillars, and relief trenches with the goal of providing improved out of band signal rejection. We will discuss the fabrication of integrated CLASS superconducting detectors with silicon quarter wave backshorts and present current measurement results.

Crowe, Erik J.↗
NASA NTRS2013

Environmental Qualification of a Single-Crystal Silicon Mirror for Spaceflight Use

This innovation is the environmental qualification of a single-crystal silicon mirror for spaceflight use. The single-crystal silicon mirror technology is a previous innovation, but until now, a mirror of this type has not been qualified for spaceflight use. The qualification steps included mounting, gravity change measurements, vibration testing, vibration- induced change measurements, thermal cycling, and testing at the cold operational temperature of 225 K. Typical mirrors used for cold applications for spaceflight instruments include aluminum, beryllium, glasses, and glass-like ceramics. These materials show less than ideal behavior after cooldown. Single-crystal silicon has been demonstrated to have the smallest change due to temperature change, but has not been spaceflight-qualified for use. The advantage of using a silicon substrate is with temperature stability, since it is formed from a stress-free single crystal. This has been shown in previous testing. Mounting and environmental qualification have not been shown until this testing.

Hagopian, John↗
NASA NTRS2014

Behavior of Particle Depots in Molten Silicon During Float-Zone Growth in Strong Magnetic Fields

Solar cells made from directionally solidified silicon cover 57% of the photovoltaic industry's market [1]. One major issue during directional solidification of silicon is the precipitation of foreign phase particles. These particles, mainly SiC and Si3N4, are precipitated from the dissolved crucible coating, which is made of silicon nitride, and the dissolution of carbon monoxide from the furnace atmosphere. Due to their hardness and size of several hundred micrometers, those particles can lead to severe problems during the wire sawing process for wafering the ingots. Additionally, SiC particles can act as a shunt, short circuiting the solar cell. Even if the particles are too small to disturb the wafering process, they can lead to a grit structure of silicon micro grains and serve as sources for dislocations. All of this lowers the yield of solar cells and reduces the performance of cells and modules. We studied the behaviour of SiC particle depots during float-zone growth under an oxide skin, and strong static magnetic fields. For high field strengths of 3T and above and an oxide layer on the sample surface, convection is sufficiently suppressed to create a diffusive like regime, with strongly dampened convection [2, 3]. To investigate the difference between atomically rough phase boundaries and facetted growth, samples with [100] and [111] orientation were processed.

Jauss, T.↗
NASA NTRS2014

Investigation of Backside Textures for Genesis Solar Wind Silicon Collectors

Genesis solar wind collectors were comprised of a suite of 15 types of ultrapure materials. The single crystal, pure silicon collectors were fabricated by two methods: float zone (FZ) and Czochralski (CZ). Because of slight differences in bulk purity and surface cleanliness among the fabrication processes and the specific vendor, it is desirable to know which variety of silicon and identity of vendor, so that appropriate reference materials can be used. The Czochralski method results in a bulk composition with slightly higher oxygen, for example. The CZ silicon array wafers that were Genesis-flown were purchased from MEMC Electronics. Most of the Genesis-flown FZ silicon was purchased from Unisil and cleaned by MEMC, although a few FZ wafers were acquired from International Wafer Service (IWS).

Gonzalez, C. P.↗
NASA NTRS2015

Buoyant Effects on the Flammability of Silicone Samples Planned for the Spacecraft Fire Experiment (Saffire)

Flammability experiments on silicone samples were conducted in anticipation of the Spacecraft Fire Experiment (Saffire). The sample geometry was chosen to match the NASA 6001 Test 1 specification, namely 5 cm wide by 30 cm tall. Four thicknesses of silicone (0.25, 0.36, 0.61 and 1.00 mm) were examined. Tests included traditional upward buoyant flame spread using Test 1 procedures, downward opposed flow flame spread, horizontal and angled flame spread, forced flow upward and downward flame spread. In addition to these configurations, upward and downward tests were also conducted in a chamber with varying oxygen concentrations. In the upward buoyant flame spread tests, the flame generally did not burn the entire sample. As thickness was increased, the flame spread distance decreased before flame extinguishment. For the thickest sample, ignition could not be achieved. In the downward tests, the two thinnest samples permitted the flame to burn the entire sample, but the spread rate was lower compared to the corresponding upward values. The other two thicknesses could not be ignited in the downward configuration. The increased flammability for downward spreading flames relative to upward ones is uncommon. The two thinnest samples also burned completely in the horizontal configuration, as well as at angles up to 75 degrees from the horizontal. The upward and downward flammability behavior was compared in atmospheres of varying oxygen concentration to determine a maximum oxygen concentration for each configuration. Upward tests in air with an added forced flow were more flammable. Complementary analyses using SEM and TGA techniques suggest the importance of the silica layer formed on the burned sample surface. As silicone burns upward, silica deposits downstream •If the silicone is ignited in the downward configuration, it burns the entire length of the sample •Burning upward at an angle increases the burn length in some cases possibly due to less silica deposition •Forced flow in the upward burning case increases flammability, likely due to an increase in convective flow preventing silica from depositing •Samples in upward configuration burning under forced flow self extinguish after forced flow is removed

Flammability↗
NASA NTRS2006

Silicon Carbide Technology

Silicon carbide based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be widely realized in commercially available SiC devices, primarily owing to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and the well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high-temperature and high-power SiC electronics are identified.

Neudeck, Philip G.↗
NASA NTRS2016

Fabrication of a Silicon Nanowire on a Bulk Substrate by Use of a Plasma Etching and Total Ionizing Dose Effects on a Gate-All-Around Field-Effect Transistor

The gate all around transistor is investigated through experiment. The suspended silicon nanowire for the next generation is fabricated on bulk substrate by plasma etching method. The scallop pattern generated by Bosch process is utilized to form a floating silicon nanowire. By combining anisotropic and istropic silicon etch process, the shape of nanowire is accurately controlled. From the suspended nanowire, the gate all around transistor is demonstrated. As the silicon nanowire is fully surrounded by the gate, the device shows excellent electrostatic characteristics.

Transistor↗
NASA NTRS2018

Fabrication and Sub-Assembly of Electrostatically Actuated Silicon Nitride Microshutter Arrays

We have developed a new microshutter array (MSA) subassembly. The MSA and a silicon substrate are flip-bonded together. The MSA has a new back side fabrication process to actuate the microshutters electrostatically, and the new silicon substrate has light shields. The microshutters with a pixel size of 100 x 200 sq micrometers are fabricated on silicon with thin silicon nitride membranes. The microshutters rotate 90 deg on torsion bars. The selected microshutters are actuated, held, and addressed electrostatically by applying voltages on the electrodes the front and back sides of the microshutters. The substrate has the light shield to block lights around the microshutters. Also, electrical connections are made from the MSA to a controller board via the substrate.

microshutter array (MSA) sub-assembly↗
NASA NTRS2019

Simultaneous Ohmic Contact to Silicon Carbide

A simultaneous ohmic contact to silicon carbide includes a mixture of platinum, titanium, and silicon compounds deposited on a silicon carbide substrate. The silicon carbide substrate includes an n-type surface and a p-type surface.

Okojie, Robert S.↗
NASA NTRSDate not supplied

Silicon Partitioning Between Iron-Rich Metal and Silicate Melt: New Constraints From Aerodynamic Laser Levitation Furnace Experiments

The partitioning of light elements (e.g., Si, C, H, etc.) between silicate melts and iron metal alloys as a function of pressure and temperature is a critical constraint in defining the compositional evolution of planetary interiors. While there are a significant number of experimental studies in the literature that examine the various influences of oxygen fugacity, temperature, pressure, and composition on the metal-melt partitioning of silicon, it is difficult to disentangle the effects of each variable due to the nominally independent parameters (e.g., pressure, temperature, composition) being collinear. To better test for the independent effects of pressure, temperature, and melt composition on the partitioning of silicon between iron alloy and silicate melt, new high temperature (1800°–2500°C), rapid quench (~700°C/s) aerodynamic levitation laser-heating experiments in the Fe-Si-Mg-O (En65-Fa5-Si3-Fe27) system were conducted. This high temperature, low pressure method is ideal for these experiments because it eliminates the metal container as a sink for elements of interest to partition into, and it has a rapid quench rate that minimizes potential exsolution of silicon from the metal phase during quench cooling. Given the short run times of the levitation experiments (30–60 seconds), a time series at a lower temperature (1700°C) in a vertical gas-mixing muffle tube furnace was also conducted to assess equilibrium times of the bulk composition. All successful runs were imaged using back-scatter electron imaging and analyzed for phase composition using a JEOL 8530F field emission microprobe. These new data were added to a comprehensive and internally consistent data set created from published experiments, and subsequently modeled using parameters designed to minimize collinearity (e.g., optical basicity is used as a proxy for melt composition). High collinearity is found in the data set however between temperature and oxygen fugacity, precluding any model that contains both as nominally independent variables. The resulting model demonstrates a statistically significant effect of pressure, temperature, and melt composition on the partitioning of silicon in Fe-rich metal, which has implications for the formation of planetary cores in rocky planets and provides important constraints on potential bulk core compositions.

Metal↗
DOE OSTI2022

A New Search for Low-mass Dark Matter and an Examination and Reduction of the Uncertainty due to the Photoelectric Absorption Cross Section using a Cryogenic Silicon Detector with Single-charge Sensitivity

Many astrophysical observations point to the abundant existence of dark matter (DM) in the universe composed of particles beyond the Standard Model. However despite numerous experiments using different techniques, DM particles have yet to be directly observed. The Super Cryogenic Dark Matter Search (SuperCDMS) SNOLAB experiment will employ silicon and germanium crystal detectors operated at temperatures as low as 15~mK to probe DM interactions using phonon and ionization signals. Recently, R\&D; facilities have developed gram-sized high-voltage eV-scale (HVeV) silicon detectors that achieve single-electron-hole-pair resolution. By probing effective DM-electron interactions, these devices can be used for searches of low-mass DM candidates.This dissertation presents a DM search experiment known as HVeV Run~2 that employs a second-generation HVeV detector operated in an above-ground laboratory at Northwestern University (IL, USA). Energy spectra are obtained from a blind analysis with 0.39 and 1.2\,g-days of exposure with the detector biased at 60 and 100\,V, respectively. The 0.93~gram detector achieves a 3\,eV phonon energy resolution, corresponding to a world-leading charge resolution of 3\,\% of a single electron-hole pair for a detector bias of 100\,V. With charge carrier trapping and impact ionization effects incorporated into the DM signal models, the resulting exclusion limits are reported for inelastic DM-electron scattering for DM masses from 0.5--$10^{4}$\,MeV$/c^{2}$; in the mass range from 1.2--50\,eV$/c^{2}$ the limits for dark photon and axion-like particle absorption are reported.Several DM search experiments, including HVeV Run~2, are sensitive to low-mass DM candidates that rely on the temperature-dependent photoelectric absorption cross section of silicon. However discrepancies in the underlying literature data result in dominating systematic uncertainties on the DM exclusion limits. In order to reduce these systematic uncertainties, this dissertation presents a novel method of making a direct, low-temperature measurement of the photoelectric absorption cross section of silicon at energies near the band gap (1.2--2.8\,eV).

Wilson, Matthew James↗
DOE OSTI2022

Silicone modified lubricant

A silicone modified lubricant includes a Group I, II, III, IV or V base oil in combination with a minor amount of a silicone oil. Further, the lubricant includes a dispersant such as a dispersant olefin copolymer which maintains the silicone oil dispersed in the base oil. The silicone oil reduces the surface tension of the lubricant thereby reducing power loss. Preferably the lubricant formation has a surface tension less than 28 mN/m, making it particularly suitable for dip lubrication systems.

Kolekar, Anant S.↗