Effects of oil and water contamination on natural gas engine combustion processes
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The effectiveness of HLW vitrification is limited by precipitation/accumulation of spinel crystals [(Fe, Ni, Mn, Zn)(Fe, Cr)2O4] in the glass discharge riser of Joule-heated ceramic melters during idling. These crystals do not affect glass durability; however, if accumulated in thick layer, they can clog the melter and prevent discharge of molten glass into canisters. To address this problem, an empirical model was developed that can predict thicknesses of accumulated layers as a function of glass composition. This model predicts well the accumulation of single crystals and/or small-scale agglomerates, but, excessive agglomeration observed in high-Ni-Fe glass resulted in an under-prediction of accumulated layers, which gradually worsen over time as an increased number of agglomerates formed. Accumulation rate of ~53.8 ± 3.7 µm/h determined for this glass will result in ~26 mm thick layer in 20 days of melter idling.
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Solid oxide fuel cells (SOFCs) are presently being developed for gasification integrated power plants that generate electricity from coal at 50+% efficiency. The interaction of trace metals in coal syngas with the Ni-based SOFC anodes is being investigated through thermodynamic analyses and in laboratory experiments, but direct test data from coal syngas exposure are sparsely available. This research effort evaluates the significance of SOFC performance losses associated with exposure of a SOFC anode to direct coal syngas. SOFC specimen of industrially relevant composition are operated in a unique mobile test skid that was deployed to the research gasifier at the National Carbon Capture Center (NCCC) in Wilsonville, AL. The mobile test skid interfaces with a gasifier slipstream to deliver hot syngas (up to 300°C) directly to a parallel array of 12 button cell specimen, each of which possesses an active area of approximately 2 cm2. During the 500 hour test period, all twelve cells were monitored for performance at four discrete operating current densities, and all cells maintained contact with a data acquisition system. Of these twelve, nine demonstrated good performance throughout the test, while three of the cells were partially compromised. Degradation associated with the properly functioning cells was attributed to syngas exposure and trace material attack on the anode structure that was accelerated at increasing current densities. Cells that were operated at 0 and 125 mA/cm² degraded at 9.1 and 10.7% per 1000 hours, respectively, while cells operated at 250 and 375 mA/cm² degraded at 18.9 and 16.2% per 1000 hours, respectively. Post-trial spectroscopic analysis of the anodes showed carbon, sulfur, and phosphorus deposits; no secondary Ni-metal phases were found.
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A hydrothermal approach was employed to efficiently synthesize SnSe nanorods. The nanorods were consolidated into polycrystalline SnSe by spark plasma sintering for low temperature electrical and thermal properties characterization. The low temperature transport properties indicate semiconducting behavior with a typical dielectric temperature dependence of the thermal conductivity. The transport properties are discussed in light of the recent interest in this material for thermoelectric applications. The nanorod growth mechanism is also discussed in detail. - Graphical abstract: SnSe nanorods were synthesized by a simple hydrothermal method through a bottom-up approach. Micron sized flower-like crystals changed to nanorods with increasing hydrothermal temperature. Low temperature transport properties of polycrystalline SnSe, after SPS densification, were reported for the first time. This bottom-up synthetic approach can be used to produce phase-pure dense polycrystalline materials for thermoelectrics applications. - Highlights: • SnSe nanorods were synthesized by a simple and efficient hydrothermal approach. • The role of temperature, time and NaOH content was investigated. • SPS densification allowed for low temperature transport properties measurements. • Transport measurements indicate semiconducting behavior.
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