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At least 739 records · Page 41

Unlocking the Dynamics of Ion Migration and Voltage Bias Stress Effects through Crystallite Engineering in Metal Halide Perovskites

Understanding the interplay between crystal engineering and the coupled electronic-ionic charge transport properties of metal halide perovskites remains a critical issue in the field. In this work, we developed an experimental approach to tune the crystallite orientation of methylammonium lead iodide (CH 3 NH 3 PbI 3 ) while maintaining their overall crystal structure. This approach allows us to selectively manipulate crystallite orientations to control out-ofplane ion migration and mitigate voltage bias stress effects in CH 3 NH 3 PbI 3 thin films. By employing advanced diffraction and spectroscopic techniques, we achieved a comprehensive characterization of the anisotropic crystallite properties in CH 3 NH 3 PbI 3 thin films with distinct preferred orientations. Our findings reveal that specific crystallite orientations, particularly those that limit halide ion migration pathways along the (200) crystallographic plane, significantly suppress out-of-plane ion migration. This suppression reduces hysteresis and alleviates voltage bias stress effects in CH 3 NH 3 PbI 3 solar cells, ultimately enhancing device stability and performance. These insights not only deepen our understanding of the relationship between crystallite orientation and device functionality but also highlight a promising strategy for regulating ion migration in MHP-based devices. This approach holds significant potential for advancing the stability and efficiency of perovskite solar cells and extending its applicability to other optoelectronic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

The role of ionic liquids in resolving the interfacial chemistry for (quasi-) solid-state batteries

Interfacial issues impede the advancement of current solid state battery technology; thus, interface engineering approaches are necessary to enable solid-state configuration. The advantage of solid-state cells stems from their low flammability and high electrochemical stability. Ionic liquids are viscous and nonflammable compounds that possess the requisite physical properties while optimizing the interface between solid electrodes and solid electrolytes, accelerating interfacial ion transport and enabling the fabrication of engineered interphases via the supply of robust chemical building blocks. In conclusion, this review summarizes the roles of ionic liquids in solid-state batteries focusing on the interface, with insights into their functionality as well as highlighting their applicability in the next generation battery systems.

25 ENERGY STORAGE↗

Interfacial Engineering of Metal Chalcogenides‐based Heterostructures for Advanced Sodium‐Ion Batteries

Sodium-ion batteries (SIBs) have become one of the most promising candidates for large-scale energy storage applications. Metal chalcogenides anode materials based on alloying or conversion reactions are widely studied because of their high theoretical capacities and rich redox reactions. However, their intrinsic limitations such as high voltage hysteresis and large volume expansion hinder their further applications. The construction of heterostructures has become an attractive strategy to alleviate the above issues. Here, the formation of built in electric fields (BIEFs) at the heterointerfaces will accelerate the migration of Na + and electrons. Moreover, heterostructures can also enhance the structural stability, generate more active sites and provide additional capacity. It is worth noting that heterointerfacial properties play a significant role in promoting the overall electrochemical performance of the heterostructures. However, a systematic understanding of their interfacial engineering is currently lacking. This article reviews the research progress of metal chalcogenides-based heterostructure anode materials in the near term. First, the definition, classification and the roles of heterostructures are introduced. Second, the detailed research progress of the metal chalcogenide-based heterostructures anodes in SIBs is discussed. Finally, the future prospects and potential research directions of the heterostructures for batteries are discussed.

anode↗

Stress engineering for crack and dendrite prevention in solid electrolytes via ion implantation

Solid-state batteries represent a promising technology that offers safer and more densely packed energy storage. A primary cause of failure in solid-state cells is the penetration of metal dendrites through the solid electrolyte. Here, we report that fluorine-ion implantation can enhance the mechanical resistance of solid electrolyte Li 6.5 La 3 Zr 1.5 Ta 0.5 O 12 to dendrite propagation by inducing residual compressive stress in the subsurface of the electrolyte. Ion implantation modifies subsurface residual stress and also alters the electrolyte’s surface, resulting in multifunctional enhancement. The combined chemical and mechanical effects of ion implantation enable reversible lithium metal stripping and plating at elevated current densities while enhancing air stability and mitigating the formation of a harmful carbonate layer at the surface. This study provides new insights into a scalable dendrite-suppression strategy for designing solid-state batteries suitable for cycling at room temperature and low stack pressures.

25 ENERGY STORAGE↗

Tunable Thermal Transport across Interfaces via Phonon Engineering

The influence of He ion radiation on GaAs thermal conductivity was investigated using TDTR and the PGM. We found that damage in the shallow defect only regions of the radiation profile scattering phonons with a frequency to the fourth dependence due to randomly distributed Frankel pairs. Damage near the end of range however, scatters phonons with a second order frequency dependence due to the cascading defects caused by the rapid radiation energy loss at the end of range resulting in defect clusters. Using the PGM and experimental thermal conductivity trends it was then possible to estimate the defect recombination rate and size of defect clusters. The methodology developed here results in a powerful tool for interrogating radiation damage in semiconductors.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Promoting Fast Ion Conduction in Li-Argyrodite through Lithium Sublattice Engineering

Fundamental understanding of ionic transport plays a pivotal role in designing and optimizing fast ionic conductors. Here, through a systematic neutron scattering and theoretical investigation, we discovered new insights about how anion sublattice affects Li + distribution and transport in Li-argyrodite. We found that the promotion of Li + conductivities is strongly correlated with a previously overlooked Li + interstitial site (16e), which is critical for realizing intercage Li + migration. More isotropic Li + migration pathways with higher Li + occupancies on the interstitial 16e site are found to be the underlying reason for the much higher Li + conductivity in Li 6 PS 5 Cl relative to the Br- and I-based analogues. We further confirm that they are also the universal driving force for the ultrahigh Li + conductivities in both anion-substituted Li-poor (Li 6–a PS 5–a X a, X = Cl and Br) and cation-substituted Li-rich argyrodite (e.g., Li 6+a GeaP 1–a S 5 I and Li 6+a SiaSb 1–a S 5 I). In conclusion, it is expected this strategy can be generally adopted to improve the ionic conductivity of the broad family of Li-rich argyrodite and beyond.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Magnetic Field Would Reduce Electron Backstreaming in Ion Thrusters

The imposition of a magnetic field has been proposed as a means of reducing the electron backstreaming problem in ion thrusters. Electron backstreaming refers to the backflow of electrons into the ion thruster. Backstreaming electrons are accelerated by the large potential difference that exists between the ion-thruster acceleration electrodes, which otherwise accelerates positive ions out of the engine to develop thrust. The energetic beam formed by the backstreaming electrons can damage the discharge cathode, as well as other discharge surfaces upstream of the acceleration electrodes. The electron-backstreaming condition occurs when the center potential of the ion accelerator grid is no longer sufficiently negative to prevent electron diffusion back into the ion thruster. This typically occurs over extended periods of operation as accelerator-grid apertures enlarge due to erosion. As a result, ion thrusters are required to operate at increasingly negative accelerator-grid voltages in order to prevent electron backstreaming. These larger negative voltages give rise to higher accelerator grid erosion rates, which in turn accelerates aperture enlargement. Electron backstreaming due to accelerator-gridhole enlargement has been identified as a failure mechanism that will limit ionthruster service lifetime. The proposed method would make it possible to not only reduce the electron backstreaming current at and below the backstreaming voltage limit, but also reduce the backstreaming voltage limit itself. This reduction in the voltage at which electron backstreaming occurs provides operating margin and thereby reduces the magnitude of negative voltage that must be placed on the accelerator grid. Such a reduction reduces accelerator- grid erosion rates. The basic idea behind the proposed method is to impose a spatially uniform magnetic field downstream of the accelerator electrode that is oriented transverse to the thruster axis. The magnetic field must be sufficiently strong to impede backstreaming electrons, but not so strong as to significantly perturb ion trajectories. An electromagnet or permanent magnetic circuit can be used to impose the transverse magnetic field downstream of the accelerator-grid electrode. For example, in the case of an accelerator grid containing straight, parallel rows of apertures, one can apply nearly uniform magnetic fields across all the apertures by the use of permanent magnets of alternating polarity connected to pole pieces laid out parallel to the rows, as shown in the left part of the figure. For low-temperature operation, the pole pieces can be replaced with bar magnets of alternating polarity. Alternatively, for the same accelerator grid, one could use an electromagnet in the form of current-carrying rods laid out parallel to the rows.

Foster, John E.↗

Tuning Porosity and Surface Area in Mesoporous Silicon for Application in Li-Ion Battery Electrodes

This work aims to improve the poor cycle lifetime of silicon-based anodes for Li-ion batteries by tuning microstructural parameters such as pore size, pore volume, and specific surface area in chemically synthesized mesoporous silicon. In this paper, we have specifically produced two different mesoporous silicon samples from the magnesiothermic reduction of ordered mesoporous silica in either argon or forming gas. In situ X-ray diffraction studies indicate that samples made in Ar proceed through a Mg 2 Si intermediate, and this results in samples with larger pores (diameter ≈ 90 nm), modest total porosity (34%), and modest specific surface area (50 m 2 g –1 ). Reduction in forming gas, by contrast, results in direct conversion of silica to silicon, and this produces samples with smaller pores (diameter ≈ 40 nm), higher porosity (41%), and a larger specific surface area (70 m 2 g –1 ). The material with smaller pores outperforms the one with larger pores, delivering a capacity of 1121 mAh g –1 at 10 A g –1 and retains 1292 mAh g –1 at 5 A g –1 after 500 cycles. For comparison, the sample with larger pores delivers a capacity of 731 mAh g –1 at 10 A g –1 and retains 845 mAh g –1 at 5 A g –1 after 500 cycles. The dependence of capacity retention and charge storage kinetics on the nanoscale architecture clearly suggests that these microstructural parameters significantly impact the performance of mesoporous alloy type anodes. Our work is therefore expected to contribute to the design and synthesis of optimal mesoporous architectures for advanced Li-ion battery anodes.

25 ENERGY STORAGE↗

Atomistic Positioning of Defects in Helium Ion Treated Single-Layer MoS 2

Structuring materials with atomic precision is the ultimate goal of nanotechnology and is becoming increasingly relevant as an enabling technology for quantum electronics/spintronics and quantum photonics. Here, we create atomic defects in monolayer MoS 2 by helium ion (He-ion) beam lithography with a spatial fidelity approaching the single-atom limit in all three dimensions. Using low-temperature scanning tunneling microscopy (STM), we confirm the formation of individual point defects in MoS 2 upon He-ion bombardment and show that defects are generated within 9 nm of the incident helium ions. Atom-specific sputtering yields are determined by analyzing the type and occurrence of defects observed in high-resolution STM images and compared with Monte Carlo simulations. Both theory and experiment indicate that the He-ion bombardment predominantly generates sulfur vacancies.

Two-dimensional materials↗

Engineering Design of D1/D3 Dipole Magnets for the Electron-Ion Collider (EIC)

Here, the Electron-Ion Collider (EIC) at Brookhaven National Laboratory (BNL) is designed to deliver a peak luminosity of 10 34 cm −2 s −1 . An electron storage ring (ESR) will be installed in the existing Relativistic Heavy Ion Collider (RHIC) tunnel and will store polarized electron beams from 5 to 18 GeV. The ESR will have 750 dipole magnets with varying field requirements, including 576 super-bend triplets consisting of two magnets D1/D3 and D2. This paper presents on the engineering design of the D1/D3 dipole magnets within the arcs, with special focus on the coil design that allows the magnet to be configured for variable ampere-turns per energy.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Non‐Traditional Positively‐Biased Narrow‐Band Perovskite Single‐Crystal Photodetectors Enabled by Interfacial Engineering

Abstract The positive bias in theory narrows down the depletion region and thus results in significant charge injection, which should be detrimental to charge generation and collection performance for traditional photodetectors. Here, instead, it is found that the external quantum efficiency (EQE) is increased by more than 50 times when the photodetector is positively biased. A positive bias of +6 V drives ion migration of Br − and Cs + towards the anode and cathode, respectively, leading to self‐doping within bulk single crystals to form an advantageous p‐i‐n junction for better charge collection in the devices. Meanwhile, the injected holes are allowed to tunnel through the cesium lead bromide/fullerene interface to reach the cathode which also significantly contributes to the enhancement of EQE in the forward‐biased devices. The positively‐biased narrow‐band (full width at half maxima (FWHM) = 16 nm) photodetectors exhibit a specific detectivity of 6.5 × 10 10 Jones at 550 nm, along with the −3 dB cutoff frequency of 2776 Hz. By manipulating charge injection and ion migration using interfacial engineering, a class of non‐traditional, positively‐biased, and highly narrow‐band photodetectors is demonstrated, which offers an alternative design strategy for imaging, biosensing, automatic control, and optical communication.

Li, Junchi↗

Effects of Heavy Ion Exposure on Nanocrystal Nonvolatile Memory

We have irradiated engineering samples of Freescale 4M nonvolatile memories with heavy ions. They use Silicon nanocrystals as the storage element, rather than the more common floating gate. The irradiations were performed using the Texas A&M University cyclotron Single Event Effects Test Facility. The chips were tested in the static mode, and in the dynamic read mode, dynamic write (program) mode, and dynamic erase mode. All the errors observed appeared to be due to single, isolated bits, even in the program and erase modes. These errors appeared to be related to the micro-dose mechanism. All the errors corresponded to the loss of electrons from a programmed cell. The underlying physical mechanisms will be discussed in more detail later. There were no errors, which could be attributed to malfunctions of the control circuits. At the highest LET used in the test (85 MeV/mg/sq cm), however, there appeared to be a failure due to gate rupture. Failure analysis is being conducted to confirm this conclusion. There was no unambiguous evidence of latchup under any test conditions. Generally, the results on the nanocrystal technology compare favorably with results on currently available commercial floating gate technology, indicating that the technology is promising for future space applications, both civilian and military.

Oldham, Timothy R.↗

Departure of microscopic friction from macroscopic drag in molecular fluid dynamics

Friction coefficient of the Langevin equation and drag of spherical macroscopic objects in steady flow at low Reynolds numbers are usually regarded as equivalent. We show that the microscopic friction can be different from the macroscopic drag when the mass is taken into account for particles with comparable scale to the surrounding fluid molecules. We illustrate it numerically by molecular dynamics simulation of chloride ion in water. Friction variation by the atomistic mass effect beyond the Langevin regime can be of use in the drag reduction technology as well as the electro or thermophoresis.

42 ENGINEERING↗

Deionization and desalination using electrostatic ion pumping

The present invention provides a new method and apparatus/system for purifying ionic solutions, such as, for example, desalinating water, using engineered charged surfaces to sorb ions from such solutions. Surface charge is applied externally, and is synchronized with oscillatory fluid movements between substantially parallel charged plates. Ions are held in place during fluid movement in one direction (because they are held in the electrical double layer), and released for transport during fluid movement in the opposite direction by removing the applied electric field. In this way the ions, such as salt, are "ratcheted" across the charged surface from the feed side to the concentrate side. The process itself is very simple and involves only pumps, charged surfaces, and manifolds for fluid collection.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

ZAM Modeling Study to Support the Tank Closure Cesium Removal (TCCR) 1A Unit

Currently at the Savannah River Site (SRS), the Tank Closure Cesium Removal (TCCR) is an “at-tank” process designed to remove cesium from aqueous tank waste. Cesium will be removed by ion exchange using the engineered IONSIV® R9120 form of Crystalline Silicotitanate (CST) media. The current TCCR design has two columns online in a lead-lag configuration to optimize media usage and achieve the target decontamination. Once the lead column is saturated with cesium, it will be removed from service, the lag column will rotate into the lead position, and a new column with fresh ion-exchange media will be placed into the lag position. The TCCR process for cesium removal from Tank 10H is detailed in X-SOW-H- 00002. Demonstration of the system began in early calendar year 2019 with two batches of salt solution generated by dissolving saltcake in Tank 10H, followed by processing of these batches through the TCCR system. A third TCCR Tank 10H dissolved saltcake batch is scheduled for processing soon. Upon completion of the demonstration with Tank 10H dissolved saltcake, Tank 9H salt solution will be transferred to Tank 10H and subsequently processed through the TCCR unit with new CST media (referred to as R9120-B 30x60) added to new IX columns. The TCCR processing campaign of Tank 9H salt solution is referred to as TCCR-1A .

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗