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At least 739 records · Page 41

Space station induced electromagnetic effects

Several mechanisms which can cause electric (E) and magnetic (B) field contaminations of the Space Station environment are identified. The level of E and B fields generated by some of them such as the motion of the vehicle across the ambient magnetic field B(0) and the 20-kHz leakage currents and charges can be controlled by proper design considerations. On the other hand, there are some mechanisms which are inherent to the interaction of large vehicles with the plasma and probably their contributions to E and B fields cannot be controlled; these include plasma waves in the wake and ram directions and the effects of the volume current generated by the ionization of neutrals. The interaction of high-voltage solar arrays with plasma is yet another rich source of E and B fields and it is probably uncontrollable. Wherever possible, quantitative estimates of E and B are given. A set of recommendations is included for further study in areas where indepth knowledge is seriously lacking.

Singh, N.↗

HIRF Avoidance Approach for Advanced Air Mobility Vehicles

Advanced Air Mobility (AAM), including Urban Air Mobility (UAM), vehicles may be required to meet stringent High-Intensity Radiated Fields (HIRF) certification requirements. HIRF can cause interference and even damage to vehicle systems. A recently proposed map-based HIRF avoidance approach can help reduce HIRF protection costs compared to the standard approach. However, it necessitates knowing the locations, frequencies, and transmit powers of high-power antennas within the operating area. This study aims to provide the necessary transmitter data by utilizing regulatory license databases. Using New York City as a representative urban area, fixed transmitter data are presented for AM, FM, TV, satellite uplink, land-mobile radio, microwave link, weather radars, and others. The maximum antenna effective isotropic radiated powers are reported. The associated electric field envelopes at 100 feet (30.48 m) distance are compared against the current rotorcraft HIRF standard. The results show the current standards are far adequate in protecting the vehicles. Maps of regions with high HIRF are illustrated. Data for several other cities are also being considered.

HIRF↗

The Role of the Hall Effect in Global Structure and Dynamics of Planetary Magnetospheres: Ganymede as a Case Study

We present high-resolution Hall MHD simulations of Ganymede's magnetosphere demonstrating that Hall electric fields in ion-scale magnetic reconnection layers have significant global effects not captured in resistive MHD simulations. Consistent with local kinetic simulations of magnetic reconnection, our global simulations show the development of intense field-aligned currents along the magnetic separatrices. These currents extend all the way down to the moon's surface, where they may contribute to Ganymede's aurora. Within the magnetopause and magnetotail current sheets, Hall J x B forces accelerate ions to the local Alfven speed in the out-of-plane direction, producing a global system of ion drift belts that circulates Jovian magnetospheric plasma throughout Ganymede's magnetosphere. We discuss some observable consequences of these Hall-induced currents and ion drifts: the appearance of a sub-Jovian 'double magnetopause' structure, an Alfvenic ion jet extending across the upstream magnetopause, and an asymmetric pattern of magnetopause Kelvin-Helmholtz waves.

Magnetic Reconnection↗

MAS: A versatile Landau-fluid eigenvalue code for plasma stability analysis in general geometry

We have developed a new global eigenvalue code, Multiscale Analysis for plasma Stabilities (MAS), for studying plasma problems with wave toroidal mode number (n) and frequency (ω) in a broad range of interest in general tokamak geometry, based on a five-field Landau-fluid description of thermal plasmas. Beyond keeping the necessary plasma fluid response, we further retain the important kinetic effects including diamagnetic drift, ion finite Larmor radius, finite parallel electric field (E||), ion and electron Landau resonances in a self-consistent and non-perturbative manner without sacrificing the attractive efficiency in computation. The physical capabilities of the code are evaluated and examined in the aspects of both theory and simulation. In theory, the comprehensive Landau-fluid model implemented in MAS can be reduced to the well-known ideal MHD model, electrostatic ion-fluid model, and drift-kinetic model in various limits, which clearly delineates the physics validity regime. In simulation, MAS has been well benchmarked with theory and other gyrokinetic and kinetic-MHD hybrid codes in a manner of adopting the unified physical and numerical framework, which covers the kinetic Alfv\'en wave (KAW), ion sound wave (ISW), low-n kink, high-n ion temperature gradient mode (ITG) and kinetic ballooning mode (KBM). Moreover, MAS is successfully applied to model the Alfv\'en eigenmode (AE) activities in DIII-D discharge #159243, which faithfully captures the frequency sweeping of reversed shear Alfv\'en eigenmode (RSAE), the tunneling damping of toroidal Alfv\'en eigenmode (TAE), as well as the polarization characteristics of kinetic beta-induced Alfv\'en eigenmode (KBAE) and beta-induced Alfv\'en-acoustic eigenmode (BAAE) being consistent with former gyrokinetic theory and simulation. With respect to the key progress contributed to the community, MAS has the advantage of combining rich physics ingredients, realistic global geometry and high computation efficiency together for plasma stability analysis in linear regime.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Probing specific ion effects at air-aqueous dibutyl phosphate interfaces using vibrational sum frequency generation spectroscopy

Molecular properties at air–liquid and liquid–liquid interface hold the key to many processes involving molecular transport across phase boundaries from aerosol formation to carbon cycling and material separation using solvent extraction techniques. Using dibutyl phosphate (DBP) as a representative for partially aqueous soluble surfactants, the specific ion effect (SIE) of the Hofmeister series cations Cs + , Na + , Li + , and Mg 2+ on the partition and interaction between surfactant molecules and water molecules in the air–aqueous interface are investigated using vibrational sum frequency generation spectroscopy and surface tension measurements. In the presence of 1 mM and 1M bulk aqueous phase ionic strength salt concentrations, fundamental qualitative relationships are observed for the salting out of DBP relative to bulk aqueous phase nitrate salt concentrations and the specific cations species. At 1 mM ionic strength, the interfacial charge and hence the interfacial potential modulates the electrostatic interactions; in particular, the counter cations partially screen the negatively charged interface induced by the DBP in a direct Hofmeister order. At 1M ionic strength, the electric field at the interface or interfacial potential is effectively neutralized, and the counter cations promote the partitioning of DBP to the interface depending on their specific interaction with the DBP head group and metal ion hydration properties. The present results lay a foundation to study SIEs of heavier metals on hydrophobic-aqueous DBP interfaces.

Louie, Christina [Washington State University, Pul↗

Efficient on-chip terahertz generation and detection with GaN photoconductive emitters

Photoconductive emitters for terahertz generation hold promise for highly efficient down-conversion of optical photons because it is not constrained by the Manley-Rowe relation. Existing terahertz photoconductive devices, however, faces limits in efficiency due to the semiconductor properties of commonly used GaAs materials. Here, we demonstrate that large bandgap semiconductor GaN, characterized by its high breakdown electric field, facilitates the highly efficient generation of terahertz waves in a coplanar stripline waveguide. Towards this goal, we investigated the excitonic contribution to the electro-optic response of GaN under static electric field both through experiments and first-principles calculations, revealing a robust excitonic Stark shift. Using this electro-optic effect, we developed a novel ultraviolet pump-probe spectroscopy for in-situ characterization of the terahertz electric field strength generated by the GaN photoconductive emitter. Our findings show that terahertz power scales quadratically with optical excitation power and applied electric field over a broad parameter range. We achieved an optical-to-terahertz conversion efficiency approaching 100% within the 0.03–1 THz bandwidth at the highest bias field (116 kV/cm) in our experiment. Further optimization of GaN-based terahertz generation devices could achieve even greater optical-to-terahertz conversion efficiencies.

Uzundal, Can B↗

Electromagnetic cyclotron-loss-cone instability associated with weakly relativistic electrons

The amplification of fast extraordinary mode waves at frequencies very close to the electron cyclotron frequency, due to the presence of a population of energetic electrons with a loss-cone type distribution, is studied. Low-energy background electrons are included in the analysis. Two types of loss-cone distribution functions are considered, and it is found that the maximum growth rates for both distribution functions are of the same order of magnitude. When the thermal effects of the energetic electrons are included in the dispersion equation, the real frequencies of the waves are lower than those obtained by using the cold plasma approximation. This effect tends to enhance the growth rate. An idealized case including a parallel electric field such that the distribution function of the trapped energetic electrons is modified is also considered. It is assumed that the parallel electric field can remove the low-energy background electrons away from the source region of radiation. Both these effects increase the growth rate.

Wong, H. K.↗

Plasma sheath effects on ion collection by a pinhole

The data tabulations presented, which express the results of particle-track trajectories through a simplified plasma-sheath electric field, should prove useful in the assessment of spacecraft 'pinhole-collection' effects. Attention is given to a method accounting for plasma-sheath effects in the application of these results. In addition, scaling rules are given for the application of these calculations to specific cases. A comparison is made between the present model's results and those of recent ion current measurements. Good agreement is obtained.

Herr, Joel L.↗

Interplanetary field control of the location of the Venus bow shock - Evidence for comet-like ion pickup

The location of the Venus bow shock is found to be sensitive to both the angle of the IMF to the solar wind flow and the phase of the solar cycle. The former dependence is attributed to the effect of planetary ion pickup by the magnetosheath convection electric field analogous to cometary ion pickup by the solar wind electric field. The latter dependence is attributed to the solar-cycle variation in the density of exospheric neutrals in the magnetosheath analogous to the cometary response to distance from the sun. Both a north-south and a pole-equator asymmetry in the location of the bow shock are also found, controlled by the direction of the IMF in the plane perpendicular to the solar wind flow.

Alexander, C. J.↗

Analog-to-digital converter based on voltage-controlled superconducting devices

The increasing demand for cryogenic electronics in superconducting and quantum computing systems calls for ultra-energy-efficient data conversion architectures that remain functional at deep cryogenic temperatures. Here, in this work, we present the first design of a voltage-controlled superconducting flash analog-to-digital converter (ADC) based on a voltage-controlled quantum-enhanced Josephson junction field-effect transistor (JJFET). Exploiting its strong gate tunability and transistor-like behavior, the JJFET offers a scalable alternative to conventional current-controlled superconducting devices while aligning naturally with CMOS-style design methodologies. Building on our previously developed Verilog-A compact model calibrated to experimental data, we design and simulate a three-bit JJFET-based flash ADC targeted for integration within cryogenic control and readout circuitry in quantum computing. The core comparator block is realized through careful bias current selection and augmented with a three-terminal nanocryotron to precisely define reference voltages. Cascaded JJFET comparators ensure robust voltage gain, cascadability, and logic-level restoration across stages. Simulation results demonstrate accurate quantization behavior with ultra-low power dissipation, underscoring the feasibility of voltage-driven superconducting mixed-signal circuits. This work establishes a critical step toward unifying superconducting logic and data conversion, paving the way for scalable cryogenic architectures in quantum–classical co-processors, low-power artificial intelligence accelerators, and next-generation energy-constrained computing platforms.

Analog-to-digital converter↗

Edge termination in vertical GaN diodes: Electric field distribution probed by second harmonic generation

We characterized the electric field distribution of GaN-on-GaN p–n diodes with partially compensated ion-implanted edge termination (ET) using an electric field induced second harmonic generation technique (EFISHG). The distributed electric field from the anode to the outer edge of the ET demonstrates the effectiveness of the ET structure. However, EFISHG also shows that its effectiveness is strongly dependent on the acceptor charge distribution in the ET's partially compensated layer (PC). A generally lower amount of acceptor charge can be inferred from the measured electric field distribution resulting from excessive ion implantation energy or dose during ET fabrication and causing lower than optimal breakdown voltage. Localized field crowding can be observed when the remaining acceptors uncompensated by the implant in the PC layer are nonuniformly distributed around the periphery of the devices. Important information can be obtained from these direct electric field measurements and used for optimizing the device design and fabrication process.

Cao, Yuke↗

Indirect tunneling enabled spontaneous time-reversal symmetry breaking and Josephson diode effect in TiN/Al 2 ⁢O 3 /Hf 0.8 ⁢Zr 0.2 ⁢O 2 /Nb tunnel junctions

Josephson diode (JD) effect in Josephson tunnel junctions (JTJs) has attracted a great deal of attention due to its importance for developing superconducting-circuitry-based quantum technologies. Even though the preparation of high-quality JTJs by techniques employed in the semiconductor industry has been demonstrated, which was an important milestone because JTJs are the building blocks of superconducting electronics even before the quantum era, the JD effect has not been accomplished in them, nor has the highly desirable electrical control of the effect. We report here the fabrication of JTJs featuring a composite tunnel barrier of Al 2 ⁢O 3 and Hf 0.8 ⁢Zr 0.2 ⁢O 2 using complementary-metal-oxide-semiconductor compatible atomic layer deposition. These JTJs were found to show the JD effect in nominally zero magnetic fields with nonreciprocity controllable via an electric training current, yielding a surprisingly large diode efficiency. The quasiparticle tunneling, through which the Josephson coupling in a JTJ is established, was found to show theoretically expected gap features but no nonreciprocity. We attribute these observations to the simultaneous presence of positive and negative local Josephson couplings in the JTJs, with the negative Josephson coupling originating from indirect tunneling, which results in spontaneous time-reversal symmetry breaking. Finally, the double-minima washboard potential for the ensemble-averaged phase difference in the resistively and capacitively shunted junction model is shown to fully account for the experimentally observed JD effect.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Scaling microstructural processes in the sintering of ionic ceramics

A multi-scale framework, combining a multiphase field formulation and large deformation mechanics, was developed as a stepping stone to perform the data analytics of the microstructural level kinetics of a sintering solid. Relevant microstructural information from this framework, such as grain, stress, and porosity statistics, was scaled up to describe the macroscopic level sintering kinetics. Here, the developed formulation was applied to describe the electric field assisted sintering of Y 2 O 3 . Microstructural inhomogeneities in a multi-granular solid result in the formation of a field of compressive stress networks, which interleave with low compression and weakly tensile regions, defining a scaffolding for sintering concentration regions to develop. A Poisson effect-induced lateral stress network is also naturally self-induced as a result of the mechanical constraints imposed by the sintering apparatus. For long sintering times, localized shear stresses enhancing mass flow along grain boundaries and internal surfaces develop. Three-sided pores are removed by either vacancy transport to the surrounding pores, or move towards the external surfaces through grain boundary diffusion. Four- and higher order-sided pores stabilize because an equal amount of vacancies are gained and lost through the connecting grain boundaries. Grain dewetting contributes to pore coalescence, suggesting that pore kinetics and grain growth are coupled and should be analyzed in concert. The combined sintering and grain growth kinetics define six regimes of sintering behavior: (1) T, the transient regime; (2) E$_Υ$, the surface energy dominated, early sintering regime, where the grain growth exponent, p = 1, and the stress concentration factor, $f$ ~ $1/\hat{ρ}^{4.6}$; (3) E S , the stress dominated, early sintering regime, where p = 1 and $f$ ~ $1/\hat{ρ}^{4}$; (4) I$_Υ$, the surface energy dominated, intermediate sintering regime, where p = 2 and $f$ ~ $1/\hat{ρ}^{4.6}$; (5) I S , the stress dominated, intermediate sintering regime, where p = 2 and $f$ ~ $1/\hat{ρ}^{4}$; and (6) L, the late sintering regime, where p = 3 and $f$ ~ 1. At the macroscopic level, the rapid densification and suppression of grain growth observed in the electric field assisted sintering process is a consequence of the compounding effects of the underlying stress-, transport-, and interfacial-energy-induced energy minimization kinetics, as predicted by the multi-scale framework.

11 - NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Influence of discharge polarity on streamer breakdown criterion of ambient air in a non-uniform electric field

Streamer breakdown of atmospheric air with non-uniform dc electric field in a needle-to-plate electrode configuration is studied using a semi-analytic model and experimental measurements. A high voltage (either positive or negative) is applied to a hollow needle with 0.51 mm outer diameter and 0.25 mm inner diameter separated from a planar ground electrode by a gap distance of 0.1–1.4 cm. Breakdown voltages are recorded for both positive and negative discharge polarities. Empirical relations between the critical avalanche size for streamer breakdown and the gap distance are proposed. Using these empirical relations, a semi-analytic model based on Meek's criterion for streamer breakdown is developed to accurately predict the measured breakdown voltages. It is found that for pd > 380 Torr cm (or d > 0.5 cm at one atmosphere) streamer breakdown of ambient air occurs at a lower applied voltage for a positively biased needle compared to that with a negatively biased needle, referred as the polarity effect. For pd < 380 Torr cm breakdown is attained at a lower applied voltage with a negatively biased needle compared to that with a positively biased needle, and breakdown mode transits from the polarity effect to the so called inverted polarity effect.

42 ENGINEERING↗

4H-SiC JFET Multilayer Integrated Circuit Technologies Tested Up to 1000 K

Testing of semiconductor electronics at temperatures above their designed operating envelope is recognized as vital to qualification and lifetime prediction of circuits. This work describes the high temperature electrical testing of prototype 4H silicon carbide (SiC) junction field effect transistor (JFET) integrated circuits (ICs) technology implemented with multilayer interconnects; these ICs are intended for prolonged operation at temperatures up to 773K (500 C). A 50 mm diameter sapphire wafer was used in place of the standard NASA packaging for this experiment. Testing was carried out between 300K (27 C) and 1150K (877 C) with successful electrical operation of all devices observed up to 1000K (727 C).

JFET↗

Rotationally Vibrating Electric-Field Mill

A proposed instrument for measuring a static electric field would be based partly on a conventional rotating-split-cylinder or rotating-split-sphere electric-field mill. However, the design of the proposed instrument would overcome the difficulty, encountered in conventional rotational field mills, of transferring measurement signals and power via either electrical or fiber-optic rotary couplings that must be aligned and installed in conjunction with rotary bearings. Instead of being made to rotate in one direction at a steady speed as in a conventional rotational field mill, a split-cylinder or split-sphere electrode assembly in the proposed instrument would be set into rotational vibration like that of a metronome. The rotational vibration, synchronized with appropriate rapid electronic switching of electrical connections between electric-current-measuring circuitry and the split-cylinder or split-sphere electrodes, would result in an electrical measurement effect equivalent to that of a conventional rotational field mill. A version of the proposed instrument is described.

Kirkham, Harold↗

Enhancing Spin Filters by Use of Bulk Inversion Asymmetry

Theoretical calculations have shown that the degrees of spin polarization in proposed nonmagnetic semiconductor resonant tunneling spin filters could be increased through exploitation of bulk inversion asymmetry (BIA). These enhancements would be effected through suitable orientation of spin collectors (or spin-polarization- inducing lateral electric fields), as described below. Spin filters -- more precisely, sources of spin-polarized electron currents -- have been sought for research on, and development of, the emerging technological discipline of spintronics (spin-transport electronics). The proposed spin filters were to be based on the Rashba effect, which is an energy splitting of what would otherwise be degenerate quantum states, caused by a spinorbit interaction in conjunction with a structural-inversion asymmetry (SIA) in the presence of interfacial electric fields in a semiconductor heterostructure. The magnitude of the energy split is proportional to the electron wave number. In a spin filter, the spin-polarized currents produced by the Rashba effect would be extracted by quantum-mechanical resonant tunneling.

Ting, David↗

Plasma sheath effects on ion collection by a pinhole

This work presents tables to assist in the evaluation of pinhole collection effects on spacecraft. These tables summarize results of a computer model which tracks particle trajectories through a simplified electric field in the plasma sheath. A technique is proposed to account for plasma sheath effects in the application of these results and scaling rules are proposed to apply the calculations to specific situations. This model is compared to ion current measurements obtained by another worker, and the agreement is very good.

Herr, Joel L.↗