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At least 739 records · Page 41
All sourcesNASA NTRSDOE OSTI
NASA NTRS1982

Modeling of thin-film GaAs growth

A model of crystal growth is discussed that takes into account the processes of nucleation on the growing surface and also considers the processes of surface migration and desorption of adatoms. The solid on solid (SOS) model of crystal growth is represented by a rectangular array of integers where each integer represents the number of adatoms in a column perpendicular to some reference frame. The adatoms can represent atoms or molecules that are being stacked. This SOS method is used to simulate epitaxial growth of crystals. Output of the computer program developed can be graphic or quantitative.

Heinbockel, J. H.↗
NASA NTRS1998

Growth of (101) Faces of Tetragonal Lysozyme Crystals: Measured Growth Rate Trends

Earlier extensive measurements of the growth rates of the (110) face of tetragonal lysozyme crystals had shown unexpected dependencies on the supersaturation. In this study similar growth rate measurements were done for the (101) faces of the crystals. The data show a similar dependence on the supersaturation, becoming appreciable only at high supersaturations, reaching a maximum value and then decreasing. As reported in earlier studies, the (101) growth rates are larger at low supersaturations than the (110) growth rates at the same conditions, and smaller at high supersaturations. These trends suggest that the growth mechanism of the (101) is similar to that of the (110) face, involving the addition of lysozyme aggregates formed in solution, but with a growth unit smaller than that of the (110) face.

Forsythe, Elizabeth L.↗
NASA NTRS1982

Vacuum tight quartz ampoule for Bridgman growth of crystals with interface demarcation

A growth ampoule for protecting the furnace lining and to prevent a change in the composition of the melt during growth of Pb-T-Te or Ge semiconductors doped with Ga is described. Mo foil is inserted into a quartz tube and sealed at the ends. A vacuum pumping system collapses the tube onto the foil. Spotwelded Mo wires lead in two directions from the collapsed section through quartz capillaries, one of which is also collapsed, on the wire, which provides a contact point for seeded growth of the semiconductor. The ampoule has been used for Bridgeman growth of crystals using a hot zone of 1150 C, with a temperature gradient of 240 C/m, and with current pulses up to 40 A/sq cm.

Crouch, R. K.↗
NASA NTRS1984

Proposed Technique of Crystal-Ribbon Growth

Technique for silicon crystal-ribbon growth from crucible, two inert wettable filaments dipped into silicon melt to guide growth of silicon sheet. Filaments clamped in place and tilted slightly away from each other and seed ribbon lowered into contact with melt to establish menisci between filaments.

Thornhill, J. W.↗
NASA NTRS2015

Growth of InSb and InI Crystals on Earth and in Microgravity

During the past 40 years, dozens of semiconductor crystal growth experiments have been conducted in space laboratories. The subsequent analysis of the space-grown crystals revealed (i) that weak convection existed in virtually all melt-growth experiments, (ii) de-wetting significantly reduced the level of stress-induced defects, and (iii) particularly encouraging results were obtained in vapor-growth experiments. In 2002, following a decade of ground based research in growing doped Ge and GaSb crystals, a series of crystal growth experiments was performed at the ISS, within the SUBSA (Solidification Using a Baffle in Sealed Ampoules) investigation. Te- and Zn-doped InSb crystals were grown from the melt. The specially designed furnace provided a side-view of the melt and precise seeding measurement of the growth rate. At present, under sponsorship of CASIS (Center for the Advancement of Science in Space, www.iss-casis.org), we are conducting ground-based experiments with indium mono-iodide (InI) in preparation for the "SUBSA II" ISS investigation, planned for 2017. The experiments include: i) Horizontal Bridgman (HB) growth and ii) Vapor Transport (VT) growth. Finite element modeling will also be conducted, to optimize the design of the flight ampoules, for vapor and melt growth.

Ostrogorsky, A. G.↗
NASA NTRS1995

Growth and characterization of crystals for room temperature I.R. detectors and second harmonic generation devices

One of the major objectives of this program was to modify the triglycine sulfate (TGS) crystals with suitable dopants and variants to achieve better pyroelectric properties and improved infrared detectivities (D(sup *)), and higher Curie transition temperature compared to undoped TGS crystals. Towards these objectives, many promising dopants, both inorganic and organic, were investigated in the last few years. These dopants gave significant improvement in the D(sup *) value of the infrared detectors fabricated from the grown crystals with no significant increase in the Curie temperature (49 C). The IR detectors were fabricated at EDO/Barnes Engineering Division, Shelton, CT. In the last one year many TGS crystals doped with urea were grown using the low temperature solution crystal growth facility. It is found that doping with urea, the normalized growth yield increased significantly compared to pure TGS crystals and there is an improvement in the pyroelectric and dielectric constant values of doped crystals. This gave a significant increase in the materials figure of merits. The Vicker's hardness of 10 wt percent urea doped crystals is found to be about three times higher in the (010) direction compared to undoped crystals. This report describes in detail the results of urea doped TGS crystals.

Lal, R. B.↗
NASA NTRS2003

Growth Defects in Biomacromolecular Crystals

NASA's ground based program confirmed close similarity between protein and small molecules crystal growth, but also revealed essential differences. No understanding exists as to why and when crystals grown in space are, in approx. 20 percent of cases, of higher quality. More rationale is needed in flight experiments. Ferritin crystals grown in space are 2.5 times cleaner than their terrestrial counterparts. This may occur because of the existence of a zone depleted with respect to impurities around a crystal growing in stagnant solution. This zone should appear since the distribution coefficient for homologous impurities exceeds unity. This impurity depletion zone hypothesis requires verification and development. Thorough purification from homologous impurities brought about resolution improvement from 2.6 to 1.8 angstroms for ferritin and from 2.6 to 2.0 angstroms for canavalin.

Source record↗
NASA NTRS2003

Experiences with Lab-on-a-chip Technology in Support of NASA Supported Research

Under the auspices of the Microgravity Sciences and Application Department at Marshall Space Flight Center, we have custom designed and fabricated a lab-on-a-chip (LOC) device, along with Caliper Technologies, for macromolecular crystal growth. The chip has been designed to deliver specified proportions of up-to five various constituents to one of two growth wells (on-chip) for crystal growth. To date, we have grown crystals of thaumatin, glucose isomerase and appoferitin on the chip. The LOC approach offered many advantages that rendered it highly suitable for space based hardware to perform crystal growth on the International Space Station. The same hardware that was utilized for the crystal growth investigations, has also been used by researchers at Glenn Research Center to investigate aspects of microfluidic phenomenon associated with two-phase flow. Additionally, our LOCAD (Lab-on-a-chip Application Development) team has lent its support to Johnson Space Center s Modular Assay for Solar System Exploration project. At present, the LOCAD team is working on the design and build of a unique lab-on-a-chip breadboard control unit whose function is not commercially available. The breadboard can be used as a test bed for the development of chip size labs for environmental monitoring, crew health monitoring assays, extended flight pharmacological preparations, and many more areas. This unique control unit will be configured for local use and/or remote operation, via the Internet, by other NASA centers. The lab-on-a-chip control unit is being developed with the primary goal of meeting Agency level strategic goals.

Monaco, Lisa↗
NASA NTRS1987

Processing materials in space - The history and the future

The development of materials processing in space, and some of the Soyuz, Apollo, Skylab, and Shuttle orbital materials experiments are reviewed. Consideration is given to protein crystal growth, electrophoresis, low-gravity isoelectric focusing, phase partitioning, a monodisperse latex reactor, semiconductor crystal growth, solution crystal growth, the triglycine sulfate experiment, vapor crystal growth experiments, the mercuric iodide experiment, electronic and electrooptical materials, organic thin films and crystalline solids, deep undercooling of metals and alloys, magnetic materials, immiscible materials, metal solidification research, reluctant glass-forming materials, and containerless glass formation. The space processing apparatuses and ground facilities, for materials processing are described. Future facilities for commercial research, development, and manufacturing in space are proposed.

Chassay, Roger↗
NASA NTRS2001

The Effect of the Wall Contact and Post-Growth C001-Down on Defects in CdTe Crystals Grown by Contactless PVT

In crystal growth, the quality of the final material may depend, among other factors, on its interaction with the walls of the ampoule during and after the growth, and on the rate of the crystal cool-down at the end of ate the process. To investigate the above phenomena, a series of CdTe crystal growth processes was carried out, The crystals were grown by physical vapor transport without contact with the side walls of the silica glass ampoules, applying the Low Supersaturation Nucleation technique. The source temperature was 930 C, the undercooling was a few degrees. The crystals, having the diameter of 25 mm, grew at the rate of a few mm per day. The post-growth cool-down to the room temperature was conducted at different rates, and lasted from a few minutes to four days. The crystals were characterized using chemical etching low temperature luminescence, and Synchrotron White Beam X-ray Topography techniques. The dislocation (etch pit) density was measured and its distribution was analyzed by comparison with Poisson curves and with the Normalized Radial Distribution Correlation Function. It was found that the contact of the crystal with silica leads to a strain field and high (in the 105 sq cm range) dislocation (etch pit) density. Similar defect concentrations were found in crystals subjected to fast post-growth cool-down. Typical EPD values for lower cool-down rates and in regions not affected by wall interactions are in the lower 10(exp 4) sq cm range. In some areas the actual dislocation density was about 10(exp 3) sq cm or even less. No apparent effect of the cool-down rate on polygonization was observed. A fine structure could be discerned in low-temperature PL spectra of crystals with low dislocation density.

Palosz, W.↗
NASA NTRS2001

Dynamic Magnetic Field Applications for Materials Processing

Magnetic fields, variable in time and space, can be used to control convection in electrically conducting melts. Flow induced by these fields has been found to be beneficial for crystal growth applications. It allows increased crystal growth rates, and improves homogeneity and quality. Particularly beneficial is the natural convection damping capability of alternating magnetic fields. One well-known example is the rotating magnetic field (RMF) configuration. RMF induces liquid motion consisting of a swirling basic flow and a meridional secondary flow. In addition to crystal growth applications, RMF can also be used for mixing non-homogeneous melts in continuous metal castings. These applied aspects have stimulated increasing research on RMF-induced fluid dynamics. A novel type of magnetic field configuration consisting of an axisymmetric magnetostatic wave, designated the traveling magnetic field (TMF), has been recently proposed. It induces a basic flow in the form of a single vortex. TMF may find use in crystal growth techniques such as the vertical Bridgman (VB), float zone (FZ), and the traveling heater method. In this review, both methods, RMF and TMF are presented. Our recent theoretical and experimental results include such topics as localized TMF, natural convection dumping using TMF in a vertical Bridgman configuration, the traveling heater method, and the Lorentz force induced by TMF as a function of frequency. Experimentally, alloy mixing results, with and without applied TMF, will be presented. Finally, advantages of the traveling magnetic field, in comparison to the more mature rotating magnetic field method, will be discussed.

Mazuruk, K.↗
NASA NTRS1993

Bulk Growth of 2-6 Crystals in the Microgravity Environment of USML-1

The first United States Microgravity Laboratory Mission (USML- 1) flew in June 1992 on the Space Shuttle Columbia. An important part of this SpaceLab mission was the debut of the Crystal Growth Furnace (CGF). Of the seven samples grown in the furnace, three were bulk grown 2-6 compounds, two of a cadmium zinc telluride alloy, and one of a mercury zinc telluride alloy. Ground based results are presented, together with the results of computer simulated growths of these experimental conditions. Preliminary characterization results for the three USML-1 growth runs are also presented and the flight sample characteristics are compared to the equivalent ground truth samples. Of particular interest are the effect of the containment vessel on surface features, and especially on the nucleation, and the effect of the gravity vector on radial and axial compositional variations and stress and defect levels.

Gillies, Donald C.↗
NASA NTRS1989

Surrogate Seeds For Growth Of Crystals

Larger crystals of higher quality grown. Alternative method for starting growth of crystal involves use of seed crystal of different material instead of same material as solution. Intended for growing single-crystal proteins for experiments but applicable in general to growth of crystals from solutions and to growth of semiconductor or other crystals from melts.

Shlichta, Paul J.↗
NASA NTRS1999

Control of Meridional Flow in Circular Cylinders by a Travelling Axial Magnetic Field

Convective flow in a Bridgman or float zone configuration significantly affects the interface shape and segregation phenomena. While the primary causative factor for this flow is buoyancy induced convection in an enclosed Bridgman melt, the presence of a free surface gives rise to surface tension driven flows in the floating zone processing of melts. It is of interest to curtail these flows in order to realize near quiescent growth conditions that have shown to result in crystals with good longitudinal and radial homogeneity and thereby of better overall quality. While buoyancy effects can be reduced by careful processing in a low gravity (space) environment, the reduction of Marangoni flows due to surface tension variations is not that straight forward. Attempts have been made with some limited success with the use of external fields to affect the melt thermo-fluid behavior. The use of a static magnetic field that reduces convective contamination through the effects of a non-intrusively induced, dissipative Lorentz force in an electrically conducting melt is one such approach. Experiments have shown that axial fields of the order of 5 Tesla can significantly eliminate convection and yield close to diffusion limited crystal growth conditions. The generation and use of such high magnetic fields require substantial hardware and incur significant costs for its operation. Lately, the use of rotating magnetic fields has been tested in semiconductor crystal growth. The method is fairly well known and commonly used in metal processing but its adaptation to crystal growth of semiconductors is fairly recent. The elegance of the technique rests in its low power requirement (typically 10-20 milli-Tesla at 50-400 Hz) and its efficacy in curtailing deleterious temperature fluctuations in the melt. A rotating magnetic field imposes a rotational force and thereby induces a circulation within the melt that tends to dominate other sporadic convective effects. Thus a known low level of convective flow is introduced into the system. A new novel variation of the Lorentz force mechanism is proposed and investigated in this study. Since one of the desired process conditions in melt crystal growth is the minimization of convective effects, this investigation examines the use of an external field of magnetic origin to counteract existing convective flow within the melt. This is accomplished by utilizing a running or traveling axial magnetic wave in the system. The concept is similar to the use of vibrational means in order to induce streaming flows that oppose buoyant or surface tension driven convection in the system. The rotation direction as well as the magnitude (strength) of this circulation can be easily controlled by external inputs thus affording a direct means of controlling the developing shape of the crystallizing front (interface). The theoretical model of this technique is fully developed and presented in this paper. Results from the solution of the developed governing equations and boundary conditions are also presented. An experimental demonstration of the concept is presented through the suppression of natural convective flow in a mercury column. Implications to crystal growth systems will be fully explored in the final manuscript.

Mazuruk, K.↗
NASA NTRS1994

Microgravity sciences application visiting scientist program

Contract NAS8-38785, Microgravity Experimental and Theoretical Research, is a project involving a large number of individual research programs related to: determination of the structure of human serum albumin and other biomedically important proteins; analysis of thermodynamic properties of various proteins and models of protein nucleation; development of experimental techniques for the growth of protein crystals in space; study of the physics of electrical double layers in the mechanics of liquid interfaces; computational analysis of vapor crystal growth processes in microgravity; analysis of the influence of magnetic fields in damping residual flows in directional solidification processes; crystal growth and characterization of II-VI semiconductor alloys; and production of thin films for nonlinear optics. It is not intended that the programs will be necessarily limited to this set at any one time. The visiting scientists accomplishing these programs shall serve on-site at MSFC to take advantage of existing laboratory facilities and the daily opportunities for technical communications with various senior scientists.

Source record↗
NASA NTRS1984

Solidification behavior of low and high thermal conductivity materials in a Bridgman-Stockbarger furnace

The solid-liquid interface position and the temperature gradients in both the solid and liquid at the interface have been studied in a modified Bridgman-Stockbarger crystal growth furnace. These crystal growth factors have been studied as a function of ampoule translation rate, materials properties, and the size and temperature of a small auxiliary heater placed at the edge of the furnace hot zone. It has been found that the interface position with respect to a furnace reference point is essentially constant during a run for a low thermal conductivity material whereas the interface position changes continuously during a run with high thermal conductivity material. However, the ampoule translation rate and auxiliary heater conditions produce interface position changes in both high and low thermal conductivity materials.

Ejim, T. I.↗