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We quantified the oxygen tracer diffusion in amorphous hafnium oxide thin films. These tracer diffusion values are consistent with the experimentally measured retention times of hafnium oxide resistive memory devices.
A universal synthesis strategy of coating crystalline core colloidal nanoparticles with amorphous metallic glass shell. We can form conformal CoB and NiB shell coatings with controlled thicknesses on different sized Au and Pt core nanoparticles.
Isotopic exchange reactions in mixed D 2 O and H 2 O amorphous solid water films were investigated using reflection absorption infrared spectroscopy. Nanoscale films composed of 5% D 2 O in H 2 O were deposited on Pt(111) and graphene covered Pt(111) substrates using simultaneous co-dosing using two molecular beams. At 130 K, we discover that the reaction is strongly dependent on the substrate with the H/D exchange occurring more rapidly on the Pt(111) surface than on graphene. At 140 K, the films eventually crystallize with the final products on the two substrates being primarily HOD on Pt(111) and a mixture of HOD and unreacted D 2 O on graphene. We demonstrate by pre-dosing H 2 and O 2 on Pt(111) that the observed differences in reactivity on the two substrates are likely due to the formation of hydrogen ions at the Pt(111) surface that are not formed on graphene. Once formed the mobile protons move through the ASW overlayer to begin the H/D exchange reaction.
The results of irradiation on 3C-silicon carbide (SiC) and amorphous SiC (a-SiC) are explored using both in situ transmission electron microscopy (TEM) and complementary molecular dynamics (MD) simulations. The single ion strikes identified in the in situ TEM irradiation experiments, utilizing a 1.7 MeV Au 3+ ion beam with nanosecond resolution, are contrasted to MD simulation results of the defect cascades produced by 10–100 keV Si primary knock-on atoms (PKAs). The MD simulations also investigated defect structures that could possibly be responsible for the observed strain fields produced by single ion strikes in the TEM ion beam irradiation experiments. Both MD simulations and in situ TEM experiments show evidence of radiation damage in 3C-SiC but none in a-SiC. Selected area electron diffraction patterns, due to the results of MD simulations and in situ TEM irradiation experiments, show no evidence of structural changes in either 3C-SiC or a-SiC.
We have studied the magnetic and transport properties of Co 2 MnGa (CMG) thin films grown on MgO(100) substrates in terms of their chemical evolution from amorphous to ordered L 2 1 phases at the substrate temperature T s during the thin film deposition. Interestingly, the chemical order and magnetic properties sharply change depending on T s . The CMG film deposited at T s = 550 °C exhibits the L 2 1 -ordered structure and the magnetization of 3.5 μ B /f.u., while the CMG film deposited at T s = 300 °C shows a B 2-ordered structure and a relatively lower magnetization of 3 μ B /f.u., possibly due to the Mn–Mn antiferromagnetic interactions. A metallic behavior of the electrical resistivity appeared in the CMG film deposited at T s = 550 °C, whereas the semiconducting behavior appeared in the CMG films deposited at 300 °C and room temperature. Moreover, we found that the absolute value of α = d(Δ ρ )/d( T 1/2 ) in the low-temperature range below about 20 K is a measure to evaluate the degree of the chemical disorder. In a Hall effect measurement, the L 2 1 -ordered CMG film obtained at T s = 550 °C shows a sizable anomalous Hall resistivity of 15 µ Ω cm. This study unveils the relation between T s and atomic ordering, providing a new pathway for optimizing the chemical order.
The plasticity of amorphous solids undergoing shear is characterized by quasi-localized rearrangements of particles. While many models of plasticity exist, the precise relationship between the plastic dynamics and the structure of a particle’s local environment remains an open question. Previously, machine learning was used to identify a structural predictor of rearrangements called “softness.” Although softness has been shown to predict which particles will rearrange with high accuracy, the method can be difficult to implement in experiments where data are limited and the combinations of descriptors it identifies are often difficult to interpret physically. Here, we address both of these weaknesses, presenting two major improvements to the standard softness method. First, we present a natural representation of each particle’s observed mobility, allowing for the use of statistical models that are both simpler and provide greater accuracy in limited datasets. Second, we employ persistent homology as a systematic means of identifying simple, topologically informed, structural quantities that are easy to interpret and measure experimentally. We test our methods on two-dimensional athermal packings of soft spheres under quasi-static shear. We find that the same structural information that predicts small variations in the response is also predictive of where plastic events will localize. We also find that an excellent accuracy is achieved in athermal sheared packings using simply a particle’s species and the number of nearest neighbor contacts.
Water in nano-scale confining environments is a key element in many biological, material, and geological systems. The structure and dynamics of the liquid can be dramatically modified under these conditions. Probing these changes can be challenging, but vibrational spectroscopy has emerged as a powerful tool for investigating their behavior. A critical, evolving component of this approach is a detailed understanding of the connection between spectroscopic features and molecular-level details. In this paper, this issue is addressed by using molecular dynamics simulations to simulate the linear infrared (IR) and Raman spectra for isotopically dilute HOD in D 2 O confined in hydroxylated amorphous silica slit pores. The effect of slit-pore width and hydroxyl density on the silica surface on the vibrational spectra is also investigated. The primary effect of confinement is a blueshift in the frequency of OH groups donating a hydrogen bond to the silica surface. This appears as a slight shift in the total (measurable) spectra but is clearly seen in the distance-based IR and Raman spectra. Analysis indicates that these changes upon confinement are associated with the weaker hydrogen-bond accepting properties of silica oxygens compared to water molecules.
Qubits made from superconducting materials are a mature platform for quantum information science application, such as quantum computing. However, material-based losses are now a limiting factor in reaching the coherence times needed for applications. In particular, knowledge of the atomistic structure and properties of the circuit materials is needed to identify, understand, and mitigate material-based decoherence channels. Here, we characterize the atomic structure of the native oxide film formed on Nb resonators by comparing fluctuation electron microscopy experiments to density functional theory calculations, finding that an amorphous layer is consistent with an Nb 2 O 5 stoichiometry. Comparing x-ray absorption measurements at the Oxygen K edge with first-principles calculations, we find evidence of d-type magnetic impurities in our sample, known to cause impedance in proximal superconductors. This work identifies the structural and chemical composition of the oxide layer grown on Nb superconductors and shows that soft x-ray absorption can fingerprint magnetic impurities in these superconducting systems.
Amorphous, ferrimagnetic Tb-Co thin films prepared with a thin Ta underlayer and either a Ta or a Pt overlayer show evidence of both soft and hard magnetic phases. At room temperature, the films exhibit conventional ferromagnetism, but low temperature magnetometry measurements reveal the decoupling of the two magnetic phases with decreasing temperature due to increased anisotropy energy of the hard layer at lower temperatures. Decreasing the film thickness to 2 nm, slightly above the superparamagnetic limit found at 1 nm, a soft, low-density phase was isolated and found to be present in all the films as confirmed with x-ray reflectivity and Rutherford backscattering spectrometry measurements. For greater thicknesses, the bottom layer retains its soft magnetic nature, while the remainder of the film is denser and has strong perpendicular magnetic anisotropy, leading to the exchange-spring behavior when the anisotropy becomes large, either at low temperatures or via a Pt overlayer that adds a strong interfacial anisotropy to the layer. Micromagnetic simulations of a soft/hard bilayer model with the experimentally determined anisotropy and magnetization parameters into a soft/hard bilayer model reproduced the experimental hysteretic behavior very well. These findings demonstrate how the magnetic state and the response of a-Tb-Co films to external fields can be controlled, providing a high degree of tunability that is promising for high-performance nanoscale devices.
We demonstrate the possibility to tune the saturation magnetization, coercivity, and uniaxial in-plane anisotropy constant in amorphous bilayers and multilayers of Co 85 (Al 70 Zr 30 ) 15 and Sm 11 Co 82 Ti 7 through the interface density. From magnetometry and x-ray circular dichroism (XMCD) measurements, we conclude that the easy-axis coercivity μ 0 H c increases four times when the number of bilayer repetitions, N, increases from 1 to 10 within a constant total sample thickness of 20 nm. At the same time, the anisotropy constant K u also increases by a factor four, whereas the saturation magnetization M s decreases slightly. The Co spin and orbital moments, m s and m l , are found to be approximately constant within the sample series. The average total Co moment is only 0.8-0.9 μ B /atom, but the m l /m s ratio is strongly enhanced compared to pure Co. Magnetization curves extracted from XMCD measurements show that the Co and Sm moments are ferromagnetically coupled for all samples.
Beamline 16-BM-B of the High-Pressure Collaborative Access Team (HPCAT) at the Advanced Photon Source (APS) provides a Paris-Edinburgh press program to probe the structure and properties of crystalline and amorphous materials up to 12 GPa at room temperature or 7 GPa at 2000°C. During the recent APS upgrade, 16-BM-B undertook major improvements to its instrumentation and measurement techniques. The upgrade includes the addition of a 1.2 m horizontal “condenser” mirror and a new variable-sized collimation system, the combination of which decreases the acquisition time for energy dispersive X-ray diffraction measurements by a factor of 10 when compared to pre-upgrade measurements. The addition of a new Ge energy-sensitive detector and DANTE (XGLab) digital pulse processor allows for processing the increased diffraction counts with minimal deadtime. In addition to upgraded beamline components, new techniques are being developed for eventual release to the user community, including electrical resistivity and tomography measurements.
Abstract The amorphous selenium (a-Se) was studied via x-ray diffraction (XRD) under pressures ranging from ambient pressure up to 30 GPa at room temperature to study its high-pressure behavior. Two compressional experiments on a-Se samples, with and without heat treatment, respectively, were conducted. Contrary to the previous reports that a-Se crystallized abruptly at around 12 GPa, in this work we report an early partially crystallized state at 4.9 GPa before completing the crystallization at around 9.5 GPa based on in-situ high pressure XRD measurements on the a-Se with 70 °C heat treatment. In comparison, crystallization pressure on another a-Se sample without thermal treatment history was observed to be 12.7 GPa, consistent with the previously reported crystallization pressure. Thus, it is proposed in this work that prior heat treatment of a-Se can result in an earlier crystallization under high pressure, which helps to understand the possible mechanism caused by the previous controversial reports on pressure induced crystallization behavior in a-Se.
Here, the experimental realization of two-dimensional (2D) gallium nitride (GaN) has enabled the exploration of 2D nitride materials beyond boron nitride. Here we demonstrate one possible pathway to realizing ultra-thin nitride layers through a two-step process involving the synthesis of naturally layered, group-III chalcogenides (GIIIC) and subsequent annealing in ammonia (ammonolysis) that leads to an atomic-exchange of the chalcogen and nitrogen species in the 2D-GIIICs. The effect of nitridation differs for gallium and indium selenide, where gallium selenide undergoes structural changes and eventual formation of ultra-thin GaN, while indium selenide layers are primarily etched rather than transformed by nitridation. Further investigation of the resulting GaN films indicates that ultra-thin GaN layers grown on silicon dioxide act as effective 'seed layers' for the growth of 3D GaN on amorphous substrates.
In this work, we performed a measurement of the ionization response of 200 μm-thick amorphous selenium (aSe) layers under drift electric fields of up to 50 V/μm. The aSe target was exposed to ionizing radiation from a 57 Co radioactive source and the ionization pulses were recorded with high resolution. Using the spectral line from the photoabsorption of 122 keV γ rays, we measured the charge yield in aSe and the line width as a function of drift electric field. From a detailed microphysics simulation of charge generation and recombination in aSe, we conclude that the strong dependence of recombination on the ionization track density provides the dominant contribution to the energy resolution in aSe. These results provide valuable input to estimate the sensitivity of a proposed next-generation search for the neutrinoless ββ decay of 82 Se that aims to employ imaging sensors with an active layer of aSe. We estimate the RMS line width of the integrated ionization signal from neutrinoless ββ decay events (of deposited energy 3 MeV) to be 2.0% for a drift field of 50 V/μm. The energy resolution can be improved to 1% by correcting for the charge yield as a function of ionization density along the imaged electron tracks.
Abstract Interconnect materials with ultralow dielectric constant, and good thermal and mechanical properties are crucial for the further miniaturization of electronic devices. Recently, it has been demonstrated that ultrathin amorphous boron nitride (aBN) films have a very low dielectric constant, high density (above 2.1 g cm −3 ), high thermal stability, and mechanical properties. The excellent properties of aBN derive from the nature and degree of disorder, which can be controlled at fabrication, allowing tuning of the physical properties for desired applications. Here, we report an improvement in the stability and mechanical properties of aBN upon hydrogen doping. With the introduction of a Gaussian approximation potential for atomistic simulations, we investigate the changing morphology of aBN with varying H doping concentrations. We found that for 8 at% of H doping, the concentration ofsp 3 -hybridized atoms reaches to a maximum which leads to an improvement of thermal stability and mechanical properties by 20%. These results will be a guideline for experimentalists and process engineers to tune the growth conditions of aBN films for numerous applications.
Ultrafast control of the magnetization in ps timescales by fs laser pulses offers an attractive avenue for applications such as fast magnetic devices for logic and memory. However, ultrafast helicity-independent all-optical switching (HI-AOS) of the magnetization has thus far only been observed in Gd-based, ferrimagnetic amorphous (a-) rare earth-transition metal (a-RE-TM) systems, and a comprehensive understanding of the reversal mechanism remains elusive. Here, we report HI-AOS in ferrimagnetic a-Gd 22-x Tb x Co 78 thin films, from x=0 to 18, and elucidate the role of Gd in HI-AOS in a-RE-TM alloys and multilayers. Increasing Tb content results in increasing perpendicular magnetic anisotropy and coercivity, without modifying magnetization density, and slower remagnetization rates and higher critical fluences for switching but still shows picosecond HI-AOS. Simulations of the atomistic spin dynamics based on the two-temperature model reproduce these results qualitatively and predict that the lower damping on the RE sublattice arising from the small spin-orbit coupling of Gd (with L=0) is instrumental for the faster dynamics and lower critical fluences of the Gd-rich alloys. Annealing a-Gd 10 Tb 12 Co 78 leads to slower dynamics which we argue is due to an increase in damping. These simulations strongly indicate that accounting for element-specific damping is crucial in understanding HI-AOS phenomena. The results suggest that engineering the element-specific damping of materials can open up new classes of materials that exhibit low-energy, ultrafast HI-AOS.
Amorphous silicon nitride is a common material in microelectronics devices, which acts as an insulating barrier. Extended annealing times at elevated temperature can initiate crystallization of α-Si 3 N 4 , which does not possess the same barrier properties. Molecular dynamics can resolve the fundamental mechanism for α-Si 3 N 4 crystallization and the influence of local environments. Here, we compare two interatomic potentials and conclude that these models predict structural features (e.g., angular distributions and densities) which span the range of experimental measurements. We confirmed these models reproduce experimental estimates of activation energy and leveraged these models to identify crystallization drivers. We conclude that near-T g , facet-dependent silicon nitride crystal growth rates can be predicted directly by either bulk or interfacial diffusion properties.
A Gd K-edge anomalous X-ray scattering (AXS) study is performed on the rare-earth (R) phosphate glass, (Gd 2 O 3 ) 0.230 (P 2 O 5 ) 0.770 , in order to determine Gd…Gd separations in its local structure. The minimum rare-earth separation is of particular interest given that the optical properties of these glasses can quench when rare-earth ions become too close to each other. To this end, a weak Gd…Gd pairwise correlation is located at 4.2(1) Å which is representative of a meta-phosphate R…R separation. More intense first neighbor Gd…Gd pairwise correlations are found at the larger radial distributions, 4.8(1) Å, 5.1(1) Å and 5.4(1) Å. These reflect a mixed ultra-phosphate and meta-phosphate structural character, respectively. A second neighbor Gd…Gd pairwise correlation lies at 6.6(1) Å which is indicative of meta-phosphate structures. Meta- and ultra-phosphate classifications are made by comparing the R…R separations against those of rare-earth phosphate crystal structures, R(PO 3 ) 3 and RP 5 O 14 respectively, or difference pair distribution function (ΔPDF) features determined on similar glasses using difference neutron scattering methods. The local structure of this glass is therefore found to display multiple rare-earth ion environments, presumably because its composition lies between these two stoichiometric formulae. These Gd…Gd separations are well resolved in the ΔPDFs that represent the AXS signal. Indeed, the spatial resolution is so good that it also enables the identification of R…X (X = R, P, O) pairwise correlations up to r ~ 9 Å; their average separations lie at r ~ 7.1(1) Å, 7.6(1) Å 7.9(1) Å, 8.4(1) Å and 8.7(1) Å. This is the first report of a Gd K-edge AXS study on an amorphous material. Its demonstrated ability to characterize the local structure of a glass up to such a long-range of r, heralds exciting prospects for AXS studies on other ternary non-crystalline materials. However, the technical challenge of such an experiment should not be underestimated, as is highlighted in this work where probing AXS signal near the Gd K-edge is found to produce inelastic X-ray scattering that precludes the normal AXS methods of data processing. Furthermore, it is shown that AXS results are not only tractable but they also reveal local structure of rare-earth phosphate glasses that is important from a materials-centered perspective and which could not be obtained by other materials characterization methods.