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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 739 records · Page 41
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Hardness assurance for proton direct ionization-induced SEEs using a high-energy proton beam

The low-energy proton energy spectra of all shielded space environments have the same shape. This shape is easily reproduced in the laboratory by degrading a high-energy proton beam, producing a high-fidelity test environment. We use this test environment to dramatically simplify rate prediction for proton direct ionization effects, allowing the work to be done at high-energy proton facilities, on encapsulated parts, without knowledge of the IC design, and with little or no computer simulations required. Proton direct ionization (PDI) is predicted to significantly contribute to the total error rate under the conditions investigated. Scaling effects are discussed using data from 65-nm, 45-nm, and 32-nm SOI SRAMs. These data also show that grazing-angle protons will dominate the PDI-induced error rate due to their higher effective LET, so PDI hardness assurance methods must account for angular effects to be conservative. As a result, we show that this angular dependence can be exploited to quickly assess whether an IC is susceptible to PDI.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2016

Analysis of TID process, geometry, and bias condition dependence in 14-nm FinFETs and implications for RF and SRAM performance

Here, total ionizing dose results are provided, showing the effects of different threshold adjust implant processes and irradiation bias conditions of 14-nm FinFETs. Minimal radiation-induced threshold voltage shift across a variety of transistor types is observed. Off-state leakage current of nMOSFET transistors exhibits a strong gate bias dependence, indicating electrostatic gate control of the sub-fin region and the corresponding parasitic conduction path are the largest concern for radiation hardness in FinFET technology. The high-Vth transistors exhibit the best irradiation performance across all bias conditions, showing a reasonably small change in off-state leakage current and Vth, while the low-Vth transistors exhibit a larger change in off-state leakage current. The “worst-case” bias condition during irradiation for both pull-down and pass-gate nMOSFETs in static random access memory is determined to be the on-state (Vgs = Vdd). We find the nMOSFET pull-down and pass-gate transistors of the SRAM bit-cell show less radiation-induced degradation due to transistor geometry and channel doping differences than the low-Vth transistor. Near-threshold operation is presented as a methodology for reducing radiation-induced increases in off-state device leakage current. In a 14-nm FinFET technology, the modeling indicates devices with high channel stop doping show the most robust response to TID allowing stable operation of ring oscillators and the SRAM bit-cell with minimal shift in critical operating characteristics.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2014

Plasma damage mechanisms in low k organosilicate glass and their inhibition by Ar ion bombardment

In-situ x-ray photoelectron spectroscopy and ex-situ Fourier transform infrared spectroscopy studies of vacuum ultraviolet (VUV) photons with or without O{sub 2}, and O radicals point to distinct mechanisms of carbon abstraction in nanoporous organosilicate glass (OSG) films. VUV alone in the absence of O{sub 2} results in Si-CH{sub 3} bond scission and recombination preferentially at silicon monomethyl sites, obeying diffusion kinetics. In contrast, the presence of O{sub 2} interferes with recombination, resulting in diffusion-dominated carbon loss kinetics, enhanced Si oxidation, and greatly accelerating the rate of carbon loss in both the near surface and bulk regions of the OSG, at both monomethyl and dimethyl sites. Carbon abstraction due to exposure to (O({sup 3}P)) does not follow diffusion kinetics, and such interactions yield a SiO{sub 2}-like surface layer inhibiting further O diffusion. Results indicate that diffusion-dominated carbon abstraction kinetics previously observed for OSG exposure to O{sub 2} plasma damage is primarily attributable to the diffusion of O{sub 2} down OSG nanopores, reacting at photoactivated sites, rather than the diffusion of O radicals. OSG pretreatment by 900 eV Ar{sup +} bombardment effectively inhibits both VUV + O{sub 2} and O damage mechanisms by formation of ∼1 nm thick SiO{sub 2}-like surface region that inhibits both O and O{sub 2} diffusion.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗