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At least 721 records · Page 40
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Rare-earth monopnictides: Family of antiferromagnets hosting magnetic Fermi arcs

We report since the discovery of topological insulators a great deal of research effort has been devoted to magnetic topological materials, in which nontrivial spin properties can be controlled by magnetic fields, culminating in a wealth of fundamental phenomena and possible applications. The main focus was on ferromagnetic materials that can host Weyl fermions and therefore spin-textured Fermi arcs. The recent discovery of Fermi arcs and new magnetic band splitting in the antiferromagnet (AFM) NdBi has opened up new avenues for exploration. Here we show that these uncharted effects are not restricted to this specific compound, but also emerge in CeBi and NdSb when they undergo paramagnetic to AFM transition. Our data show that the Fermi arcs in NdSb have twofold symmetry, leading to strong anisotropy that may enhance effects of spin textures on transport properties. Our findings thus demonstrate that the RBi and RSb series are materials that host magnetic Fermi arcs and may be a potential platform for modern spintronics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Positive spin Hall magnetoresistance in single-crystalline Pt/CoO(001) bilayers

Here, the spin Hall magnetoresistance (SMR) effect in single-crystalline Pt/CoO(001) bilayers has been systematically investigated. X-ray magnetic linear dichroism measurements prove that CoO antiferromagnetic (AFM) spins can be switched into the direction orthogonal to the applied field. We find the SMR signal is comprised of two components related to either the switching of CoO AFM Néel order or the applied strong field effect. Both SMR components show a “positive” angular dependence with $R_{∥} > R_{⊥}$, while $R_{∥} (R_{⊥})$ is defined as the resistance with the applied in-plane field parallel (perpendicular) to the current. The observed positive SMR is mainly attributed to the uncompensated spins at the Pt/CoO interface, instead of the CoO AFM spins. Our study may attract a great deal of interest to understand the complicated SMR effect in AFM spintronics materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Fractional quantum Hall valley ferromagnetism in the extreme quantum limit

Electrons' multiple quantum degrees of freedom can lead to rich physics, including a competition between various exotic ground states, as well as novel applications such as spintronics and valleytronics. Here we report magnetotransport experiments demonstrating how the valley degree of freedom impacts the fractional quantum states (FQHSs), and the related magnetic-flux-electron composite fermions (CFs), at very high magnetic fields in the extreme quantum limit when only the lowest Landau level is occupied. Unlike in other multivalley two-dimensional electron systems such as Si or monolayer graphene and transition-metal dichalcogenides, in our AlAs sample we can continuously tune the valley polarization via the application of in situ strain. We find that the FQHSs remain exceptionally strong even as they make valley polarization transitions, revealing a surprisingly robust ferromagnetism of the FQHSs and the underlying CFs. Our observation implies that the CFs are strongly interacting in our system. In conclusion, we are also able to obtain a phase diagram for the FQHS and CF valley polarization in the extreme quantum limit as we monitor transitions of the FHQSs with different valley polarizations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Large bilinear magnetoresistance from Rashba spin-splitting on the surface of a topological insulator

In addition to the topologically protected linear dispersion, a band-bending-confined two-dimensional electron gas with tunable Rashba spin-splitting (RSS) was found to coexist with the topological surface states on the surface of topological insulators (TIs). Here, in this paper, we report the observation of large bilinear magnetoresistance (BMR) in Bi 2 ⁢Se 3 films decorated with transition-metal atoms. The magnitude of the BMR sensitively depends on the type and amount of atoms deposited, with a maximum achieved value close to those of strong Rashba semiconductors. Our first-principles calculations reproduce the quantum well states and reveal sizable RSS in all Bi 2 ⁢Se 3 heterostructures with broken inversion symmetry. Our results show that charge-spin interconversion through RSS states in TIs can be fine tuned through surface atom deposition and easily detected via BMR for potential spintronic applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Accidental persistent spin textures in the proustite mineral family

Persistent spin textures (PSTs) in momentum space have the potential to enable spintronic devices which are currently limited by spin lifetimes in nonmagnetic spin-orbit coupled materials. We perform a first-principles study on the proustite mineral family, Ag 3 ⁢B⁢Q 3 (B = As, Sb; Q = S, Se), and show these chalcogenides exhibit nonsymmetry-protected PSTs, which we refer to as symmetry-assisted PSTs. Chemical substitution can be used to tune the PST quality and properties, e.g., spin lifetime, and we find that a Rashba anisotropy criterion correlates with the PST area and spin lifetime for two of the three proustites examined. Last, we show that a first-order effective SOC Hamiltonian, often used in two-dimensional systems, is insufficient to describe the PST state in all proustites, suggesting that higher order models are necessary to fully describe PSTs in bulk three-dimensional materials.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Computation of high-frequency magnetoelastic waves in layered materials

Here, the direct calculation of magnetoelastic wave dispersion in layered media is presented using an efficient, accurate computational technique. The governing, coupled equations for elasticity and magnetism, the Navier and Landau-Lifshitz equations, respectively, are linearized to form a quadratic eigenvalue problem that determines a complex web of wave-number–frequency dispersion branches and their corresponding mode profiles. Numerical discretization of the eigenvalue problem via a spectral collocation method (SCM) is employed to determine the complete dispersion maps for both a single, finite-thickness magnetic layer and a finite magnetic-nonmagnetic double-layer. The SCM, previously used to study elastic waves in nonmagnetic media, is fast, accurate, and adaptable to a variety of sample configurations and geometries. Emphasis is placed on the extremely high-frequency regimes being accessed in ultrafast magnetism experiments. The dispersion maps and modes provide insight into how energy propagates through the coupled system, including how energy can be transferred between elastic- and magnetic-dominated waves as well as between different layers. The numerical computations for a single layer are further understood by a simplified analytical calculation in the high-frequency, exchange-dominated regime where the resonance condition required for energy exchange (an anticrossing) between quasi-elastic and quasi-magnetic dispersion branches is determined. Nonresonant interactions are shown to be well approximated by the dispersion of uncoupled elastic and magnetic waves. The methods and results provide fundamental theoretical tools to model and understand current and future magnetic devices powering spintronic innovation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Layer-dependent optically induced spin polarization in InSe

Optical control of spin in semiconductors has been pioneered using nanostructures of III-V and II-VI semi-conductors, but the emergence of two-dimensional van der Waals materials offers an alternative low-dimensional platform for spintronic phenomena. Indium selenide (InSe), a group-III monochalcogenide van der Waals material, has shown promise for optoelectronics due to its high electron mobility, tunable direct band gap, and quantum transport. In addition to these confirmed properties, there are predictions of spin-dependent optical selection rules, suggesting the potential for all-optical excitation and control of spin in a two-dimensional layered material. Despite these predictions, layer-dependent optical spin phenomena in InSe have yet to be explored. Here, we present measurements of layer-dependent optical spin dynamics in few-layer and bulk InSe. Polarized photoluminescence reveals layer-dependent optical orientation of spin, thereby demonstrating the optical selection rules in few-layer InSe. Spin dynamics are also studied in many-layer InSe using time-resolved Kerr rotation spectroscopy. By applying out-of-plane and in-plane static magnetic fields for polarized emission measurements and Kerr measurements, respectively, the g factor for InSe was extracted. Further investigations are done by calculating precession values using a k · p model, which is supported by ab initio density functional theory. Comparison of predicted precession rates with experimental measurements highlights the importance of excitonic effects in InSe for understanding spin dynamics. In conclusion, optical orientation of spin is an important prerequisite for optospintronic phenomena and devices, and these first demonstrations of layer-dependent optical excitation of spins in InSe lay the foundation for combining layer-dependent spin properties with advantageous electronic properties found in this material.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Plasmons in Z 2 topological insulators

Here, we study plasmonic excitations in the Kane-Mele model, a two-dimensional Z 2 topological insulator on the honeycomb lattice, using the random phase approximation (RPA). In the topologically nontrivial phase, the model has conducting edge states that traverse the bulk energy gap and display spin-momentum locking. Such a state of matter is called the quantum spin hall (QSH) phase, which is robust against time-reversal (TR) invariant perturbations. We find that in the QSH phase, gapless spin-polarized plasmons can be excited on the edges of the system. The propagation of these plasmons is chiral for each individual spin component and shows spin-momentum locking for both spin components on the same edge. Moreover, we study the effect of external magnetic fields on the gapless edge plasmons. Specifically, out-of-plane magnetic fields delocalize edge plasmons propagating in one direction without affecting the other one, while an in-plane magnetic field can be applied to selectively excite a specific spin-plasmon branch with proper doping or gating to the system. Our findings may have potential applications in novel plasmonic and spintronic devices. We also investigate plasmons in the Kane-Mele model on a finite-sized diamond-shaped nanoflake and observe low-energy plasmons circulating the boundary of the material.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Introduction of localized spin-state transitions in the optical absorption spectrum of Cr-doped GaN

Using a hybrid density functional, we study the electronic, magnetic, and neutral excitations of the paradigmatic Cr-doped GaN solid. Our results indicate that the ≈1% doped wurtzite GaN crystal retains the semiconducting nature of the host, associated with a magnetic moment of 3 μ B . Further, as a consequence of Cr doping, additional hybridized bands are formed within the intrinsic band gap of GaN, leading to a considerable band gap narrowing by 1.4 eV and low-energy optical transitions. Our results indicate dark Cr d-d transitions at very low energy (0.5–0.7 eV), followed by bright transitions in the visible energy range (1.8–2.2 eV). Characterization of the electron-hole pairs suggests that the latter originates from the internal transitions among hybridized Cr d –N p states. With the existence of these additional optical features within the visible energy window, one can expect an enhancement to the photoelectric conversion efficiency of GaN upon Cr doping, in addition to applications in spintronics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Electronic origin of half-metal to semiconductor transition and colossal magnetoresistance in spinel HgCr 2 Se 4

Half metals are ferromagnets hosting spin-polarized conducting carriers and are crucial for spintronics applications. The chromium spinel HgCr 2 Se 4 represents a unique type of half-metal, which features a half-metal to semiconductor transition (HMST) and exhibits colossal magnetoresistance (CMR) across the ferromagnetic-paramagnetic (FM-PM) transition. Here, using angle-resolved photoemission spectroscopy, we find that the Fermi surface of n-type HgCr 2 Se 4 (n–HgCr 2 Se 4 ) consists of a single electron pocket which moves above the Fermi level (E F ) upon the FM-PM transition, leading to the HMST. Such a Lifshitz transition manifests a giant band splitting which originates from the exchange interaction unveiled with a specific chemical nonstoichiometry. The exchange band splitting and the chemical nonstoichiometry are two key ingredients to the HMST and CMR, consistent with our ab initio calculation. Our findings provide spectroscopic evidence of the electronic origin of the anomalous properties of HgCr 2 Se 4 , which address the unique phase transition in half-metals.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Unconventional skyrmions in an interfacial frustrated triangular lattice

Magnetic skyrmions are spin topological textures of potential interest in spintronics-related data storage and processing devices. Here, in this work, we show the emergence of unconventional skyrmions in a geometrically frustrated triangular lattice on an inversion-symmetry-breaking two-dimensional electron gas substrate. Starting with a classical double-exchange mechanism, this generic interface induces exotic skyrmionic and unique noncoplanar magnetic states not observed in the equivalent square lattice interface. We study the model by deriving an effective spin Hamiltonian. Large scale classical Monte Carlo simulations provide a quantitative evidence for the emergence of these exotic magnetic states. We found that these chiral magnetic states exhibit a substantial and nonzero topological Hall conductivity. As potential material candidates, we propose Cr/MoS 2 , Fe/MoS 2 , and Fe/WSe 2 interfaces because they have the requisite underlying triangular lattice structures and large spin-orbit coupling.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

High spin polarization in the disordered quaternary Heusler alloy FeMnVGa

Here in this paper, we report the successful synthesis of a Fe-based highly spin-polarized quaternary Heusler alloy FeMnVGa and its structural, magnetic, and transport properties probed through different experimental methods and theoretical techniques. Density functional theory (DFT) calculations performed on different types of structures reveal that the structure with Ga at 4a, V at 4b, Mn at 4c, and Fe at 4d (space group F$\bar{4}$3m) possess minimum energy among all the ordered variants. Ab initio simulations in the most stable ordered structure show that the compound is a ferromagnet having a large spin-polarization (89.9%). Neutron diffraction reveals that the compound crystallizes in disordered type-2 structure (space group Fm$\bar{3}$m) in which Ga occupies at 4a, V 4b and Fe/Mn occupy 4c/4d sites with 50:50 proportions. The structural disorder is further confirmed by x-ray diffraction, extended x-ray absorption fine structure, 57 Fe Mössbauer spectrometry results, and DFT calculations. Magnetization studies suggest that the compound orders ferromagnetically below T C ~ 293 K and the saturation magnetization follows the Slater-Pauling rule. Mössbauer spectrometry, along with neutron diffraction, suggest that Mn is the major contributor to the total magnetism in the compound, consistent with the theoretical calculations, which also indicates that spin polarization remains high (81.3%), even in the presence of such large atomic disorder. The robustness of the half-metallic ferromagnetic (HMF) property in the presence of disorder is a quite unique characteristic over other reported HMF in literature and makes this compound quite promising for spintronics applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Direct experimental evidence of tunable charge transfer at the LaNiO 3 / CaMnO 3 ferromagnetic interface

Interfacial charge transfer in oxide heterostructures gives rise to a rich variety of electronic and magnetic phenomena. Designing heterostructures where one of the thin-film components exhibits a metal-insulator transition opens a promising avenue for controlling such phenomena both statically and dynamically. In this work, we utilize a combination of depth-resolved soft x-ray standing-wave and hard x-ray photoelectron spectroscopies in conjunction with polarization-dependent x-ray absorption spectroscopy to investigate the effects of the metal-insulator transition in LaNiO 3 on the electronic and magnetic states at the LaNiO 3 /CaMnO 3 interface. Here, we report a direct observation of the reduced effective valence state of the interfacial Mn cations in the metallic superlattice with an above-critical LaNiO 3 thickness (6 unit cells, u.c.) facilitated by the charge transfer of itinerant Ni 3d e g electrons into the interfacial CaMnO 3 layer. Conversely, in an insulating superlattice with a below-critical LaNiO 3 thickness of 2 u.c., a homogeneous effective valence state of Mn is observed throughout the CaMnO 3 layers due to the blockage of charge transfer across the interface. The ability to switch and tune interfacial charge transfer enables precise control of the emergent ferromagnetic state at the LaNiO 3 /CaMnO 3 interface and, thus, has far-reaching consequences on the future strategies for the design of next-generation spintronic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Exchange coupling in $\mathrm{Bi_2}$ $\mathrm{Se_3}$ / $\mathrm{EuSe}$ heterostructures and evidence of interfacial antiferromagnetic order formation

Spatial confinement of electronic topological surface states (TSSs) in topological insulators poses a formidable challenge because TSSs are protected by time-reversal symmetry. In previous works formation of a gap in the electronic spectrum of TSSs has been successfully demonstrated in topological insulator/magnetic material heterostructures, where ferromagnetic exchange interactions locally lift the time-reversal symmetry. Here we report experimental evidence of exchange interaction between a topological insulator $\mathrm{Bi_2}$ $\mathrm{Se_3}$ and a magnetic insulator EuSe. Spin-polarized neutron reflectometry reveals a reduction of the in-plane magnetic susceptibility within a 2 nm interfacial layer of EuSe, and the combination of superconducting quantum interference device (SQUID) magnetometry and Hall measurements points to the formation of an interfacial layer with a suppressed net magnetic moment. This suppressed magnetization survives up to temperatures five times higher than the Néel temperature of EuSe. Its origin is attributed to the formation of an interfacial antiferromagnetic state. Abrupt resistance changes observed in high magnetic fields are consistent with antiferromagnetic domain reconstruction affecting transport in a TSS via exchange coupling. Importantly, the high-temperature local control of TSSs with zero net magnetization unlocks new opportunities for the design of electronic, spintronic, and quantum computation devices, ranging from quantization of Hall conductance in zero fields to spatial localization of non-Abelian excitations in superconducting topological qubits.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Dynamics of nonequilibrium magnons in gapped Heisenberg antiferromagnets

Nonequilibrium dynamics in spin systems is a topic currently under intense investigation as it provides fundamental insights into thermalization, universality, and exotic transport phenomena. While most of the studies have been focused on ideal closed quantum many-body systems such as ultracold atomic quantum gases and one-dimensional spin chains, driven-dissipative Bose gases in steady states away from equilibrium in classical systems also lead to intriguing nonequilibrium physics. Here, in this work, we theoretically investigate out-of-equilibrium dynamics of magnons in a gapped Heisenberg quantum antiferromagnet based on Boltzmann transport theory. We show that, by treating scattering terms beyond the relaxation-time approximation in the Boltzmann transport equation, energy and particle number conservation mandate that nonequilibrium magnons cannot relax to equilibrium, but decay to other nonequilibrium stationary states. The only decay channel for these stationary states back to equilibrium is through the nonconserving interactions (i.e., changing particle number and/or energy within the magnon system) such as boundary or magnon-phonon scattering. At low temperatures, these nonconserving interactions are much slower processes than intrinsic magnon-magnon interaction in a gapped spin system. Using magnon-phonon interaction as a quintessential type of nonconserving interaction, we then propose that nonequilibrium steady states of magnons can be maintained and tailored using periodic driving at frequencies faster than relaxation due to phonon interactions. These findings reveal a class of classical material systems that are suitable platforms to study nonequilibrium statistical physics and macroscopic phenomena such as classical Bose-Einstein condensation of quasiparticles and magnon supercurrents that are relevant for spintronic applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Controlled skyrmion ratchet in linear protrusion defects

Using atomistic simulations, we investigate the dynamical behavior of a single skyrmion interacting with an asymmetric linear protrusion array under external ac driving. The linear protrusion array is placed in the xy plane and is composed of magnetic walls near the edge of the nanotrack that have angled linear protrusions into the nanotrack. The structure forms a hard axis for –x direction motion and an easy axis for +x direction motion. When the ac drive is applied along the x direction, the skyrmion moves along the hard direction of the substrate asymmetry in three phases: a pinned phase with localized skyrmion orbits, a constant velocity phase where the orbits become delocalized, and a reentrant pinned phase with larger localized orbits. We measure the dependence of the skyrmion velocity on the frequency and amplitude of the ac drive. All three phases appear for all frequency values simulated here, and in the constant velocity phase the skyrmion velocity depends only on the frequency and not on the amplitude of the ac drive. When ac driving is applied in the y direction, the skyrmion moves along the easy direction of the substrate asymmetry and exhibits the same three phases as for x-direction driving along with a fourth phase which, at high driving frequencies, consists of a series of constant velocity phases, each with different average skyrmion velocities. For low frequencies, the constant velocity phase is lost and the skyrmion speed increases linearly with increasing ac drive amplitude due to a Magnus boost effect. Finally, our findings suggest new ways to create reliable data transport for spintronic devices using skyrmions as information carriers, where the skyrmion direction and speed can be controlled by varying only the ac drive amplitude and frequency.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Designed metal-insulator transition in low-symmetry magnetic intermetallics

Compounds exhibiting half-metallic character and metal-insulator transitions draw considerable attention in condensed-matter and materials physics due to their potential use in spintronics. Here we show that specific electron doping plays a crucial role in tailoring thermodynamic, structural, electronic, and magnetic properties of materials derived from low-symmetry magnetic intermetallics, exemplified on triclinic Mn 4 Al 11 . Upon chemical doping of Al by Ge, we predict improved phase stability and adherence to a generalized “18-n rule” governing closed-shell configurations in intermetallic with narrow bandgaps. Validating experiments include measurements of phase stability and electronic transport properties of electron-doped Mn 4 Al 10 Ge that crystallizes in the Mn 4 Al 11 -type structure, confirming the bandgap opening as predicted by chemical analysis and density-functional theory. Here we also demonstrate theoretically that hydrostatic pressure enhances the predicted half-metallic gap in the up-spin channel, which leads to a ferrimagnetic-to-ferromagnetic transition driven by Mn-Mn charge ordering in the Mn 4 Al 11 parent. We have also discussed the generality of our approach in predicting the design of other classes of intermetallics including half and full Heusler compounds.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Magnetism in the axion insulator candidate Eu 5 In 2 Sb 6

Eu 5 In 2 Sb 6 is a member of a family of orthorhombic nonsymmorphic rare-earth intermetallics that combines large localized magnetic moments and itinerant exchange with a low carrier density and perpendicular glide planes. This may result in special topological crystalline (wallpaper fermion) or axion insulating phases. Recent studies of Eu 5 In 2 Sb 6 single crystals have revealed colossal negative magnetoresistance and multiple magnetic phase transitions. Here, we clarify this ordering process using neutron scattering, resonant elastic x-ray scattering, muon spin-rotation, and magnetometry. The nonsymmorphic and multisite character of Eu 5 In 2 Sb 6 results in coplanar noncollinear magnetic structures with an Ising-like net magnetization along the a axis. A reordering transition, attributable to competing ferro- and antiferromagnetic couplings, manifests as the onset of a second commensurate Fourier component. In the absence of spatially resolved probes, the experimental evidence for this low-temperature state can be interpreted either as an unusual double- q structure or in a phase separation scenario. The net magnetization produces variable anisotropic hysteretic effects which also couple to charge transport. The implied potential for functional domain physics and topological transport suggests that this structural family may be a promising platform to implement concepts of topological antiferromagnetic spintronics. Published by the American Physical Society 2024

Rahn, M. C. (ORCID:0000000174038288)↗