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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 721 records · Page 40
All sourcesNASA NTRSDOE OSTI
NASA NTRS2004

Scanning Tunneling Optical Resonance Microscopy Developed

The ability to determine the in situ optoelectronic properties of semiconductor materials has become especially important as the size of device architectures has decreased and the development of complex microsystems has increased. Scanning Tunneling Optical Resonance Microscopy, or STORM, can interrogate the optical bandgap as a function of its position within a semiconductor micro-structure. This technique uses a tunable solidstate titanium-sapphire laser whose output is "chopped" using a spatial light modulator and is coupled by a fiber-optic connector to a scanning tunneling microscope in order to illuminate the tip-sample junction. The photoenhanced portion of the tunneling current is spectroscopically measured using a lock-in technique. The capabilities of this technique were verified using semiconductor microstructure calibration standards that were grown by organometallic vapor-phase epitaxy. Bandgaps characterized by STORM measurements were found to be in good agreement with the bulk values determined by transmission spectroscopy and photoluminescence and with the theoretical values that were based on x-ray diffraction results.

Bailey, Sheila G.↗
NASA NTRS1992

Molecular beam epitaxy engineered III-V semiconductor structures for low-power optically addressed spatial light modulators

Device approaches are investigated for optically addressed SLMs based on molecular-beam epitaxy (MBE) engineered III-V materials and structures. Strong photooptic effects can be achieved in periodically delta-doped multiple-quantum-well structures, but are still insufficient for high-contrast modulation with only single- or double-pass absorption through active layers of practical thickness. The asymmetric Fabry-Perot cavity approach is employed to permit extinction of light due to interference of light reflected from the front and back surfaces of the cavity. This approach is realized with an all-MBE-grown structure consisting of GaAs/AlAs quarter-wave stack reflector grown over the GaAs substrate as the high reflectance mirror and the GaAs surface as the low reflectance mirror. High-contrast modulation is achieved using a low-power InGaAs/GaAs quantum well laser for the control signal.

Larsson, Anders G.↗
NASA NTRS2010

Low Mass Printable Devices for Energy Capture, Storage, and Use

The energy-efficient, environmentally friendly technology that will be presented is the result of a Space Act Agreement between NthDegree Technologies Worldwide, Inc., and the National Aeronautics and Space Administration's (NASA's) Marshall Space Flight Center (MSFC). The work combines semiconductor and printing technologies to advance lightweight electronic and photonic devices having excellent potential for commercial and exploration applications. Device development involves three projects that relate to energy generation and consumption: (1) a low-mass efficient (low power, low heat emission) micro light-emitting diode (LED) area lighting device; (2) a low-mass omni-directional efficient photovoltaic (PV) device with significantly improved energy capture; and (3) a new approach to building super-capacitors. These three technologies, energy capture, storage, and usage (e.g., lighting), represent a systematic approach for building efficient local micro-grids that are commercially feasible; furthermore, these same technologies, appropriately replacing lighting with lightweight power generation, will be useful for enabling inner planetary missions using smaller launch vehicles and to facilitate surface operations during lunar and planetary surface missions. The PV device model is a two sphere, light trapped sheet approximately 2-mm thick. The model suggests a significant improvement over current thin film systems. For lighting applications, all three technology components are printable in-line by printing sequential layers on a standard screen or flexographic direct impact press using the three-dimensional printing technique (3DFM) patented by NthDegree. One primary contribution to this work in the near term by the MSFC is to test the robustness of prototype devices in the harsh environments that prevail in space and on the lunar surface. It is anticipated that this composite device, of which the lighting component has passed off-gassing testing, will function appropriately in such environments consistent with NASA s exploration missions. Advanced technologies such as this show promise for both space flight and terrestrial applications.

Frazier, Donald O.↗
NASA NTRS2010

Low Mass Printable Devices for Energy Capture, Storage, and Use for Space Exploration Missions

The energy-efficient, environmentally friendly technology that will be presented is the result of a Space Act Agreement between -Technologies Worldwide, Inc., and the National Aeronautics and Space Administration s (NASA s) Marshall Space Flight Center (MSFC). This work combines semiconductor and printing technologies to advance lightweight electronic and photonic devices having excellent potential for commercial and exploration applications, and is an example of industry and government cooperation that leads to novel inventions. Device development involves three energy generation and consumption projects: 1) a low mass efficient (low power, low heat emission) micro light-emitting diode (LED) area lighting device; 2) a low-mass omni-directional efficient photovoltaic (PV) device with significantly improved energy capture; and 3) a new approach to building supercapacitors. These three technologies - energy capture, storage, and usage (e.g., lighting) - represent a systematic approach for building efficient local micro-grids that are commercially feasible; furthermore, these same technologies will be useful for lightweight power generation that enables inner planetary missions using smaller launch vehicles and facilitates surface operations. The PV device model is a two-sphere, light-trapped sheet approximately 2-mm thick. The model suggests a significant improvement over current thin film systems. All three components may be printed in line by printing sequential layers on a standard screen or flexographic direct impact press using the threedimensional printing technique (3DFM) patented by NthDegree. MSFC is testing the robustness of prototype devices in the harsh space and lunar surface environments, and available results will be reported. Unlike many traditional light sources, this device does not contain toxic compounds, and the LED component has passed stringent off-gassing tests required for potential manifesting on spacecraft such as the International Space Station. Future exploration missions will benefit from "green" technology lighting devices such as this, which show great promise for both terrestrial use and space missions.

Frazier, Donald O.↗
NASA NTRS1993

Radiation hardened microprocessor for small payloads

The RH-3000 program is developing a rad-hard space qualified 32-bit MIPS R-3000 RISC processor under the Naval Research Lab sponsorship. In addition, under IR&D Harris is developing RHC-3000 for embedded control applications where low cost and radiation tolerance are primary concerns. The development program leverages heavily from commercial development of the MIPS R-3000. The commercial R-3000 has a large installed user base and several foundry partners are currently producing a wide variety of R-3000 derivative products. One of the MIPS derivative products, the LR33000 from LSI Logic, was used as the basis for the design of the RH-3000 chipset. The RH-3000 chipset consists of three core chips and two support chips. The core chips include the CPU, which is the R-3000 integer unit and the FPA/MD chip pair, which performs the R-3010 floating point functions. The two support whips contain all the support functions required for fault tolerance support, real-time support, memory management, timers, and other functions. The Harris development effort had first passed silicon success in June, 1992 with the first rad-hard 32-bit RH-3000 CPU chip. The CPU device is 30 kgates, has a 508 mil by 503 mil die size and is fabricated at Harris Semiconductor on the rad-hard CMOS Silicon on Sapphire (SOS) process. The CPU device successfully passed tesing against 600,000 test vectors derived directly on the LSI/MIPS test suite and has been operational as a single board computer running C code for the past year. In addition, the RH-3000 program has developed the methodology for converting commercially developed designs utilizing logic synthesis techniques based on a combination of VHDK and schematic data bases.

Shah, Ravi↗
NASA NTRS2011

Metallization for Yb14MnSb11-Based Thermoelectric Materials

Thermoelectric materials provide a means for converting heat into electrical power using a fully solid-state device. Power-generating devices (which include individual couples as well as multicouple modules) require the use of ntype and p-type thermoelectric materials, typically comprising highly doped narrow band-gap semiconductors which are connected to a heat collector and electrodes. To achieve greater device efficiency and greater specific power will require using new thermoelectric materials, in more complex combinations. One such material is the p-type compound semiconductor Yb14MnSb11 (YMS), which has been demonstrated to have one of the highest ZT values at 1,000 C, the desired operational temperature of many space-based radioisotope thermoelectric generators (RTGs). Despite the favorable attributes of the bulk YMS material, it must ultimately be incorporated into a power-generating device using a suitable joining technology. Typically, processes such as diffusion bonding and/or brazing are used to join thermoelectric materials to the heat collector and electrodes, with the goal of providing a stable, ohmic contact with high thermal conductivity at the required operating temperature. Since YMS is an inorganic compound featuring chemical bonds with a mixture of covalent and ionic character, simple metallurgical diffusion bonding is difficult to implement. Furthermore, the Sb within YMS readily reacts with most metals to form antimonide compounds with a wide range of stoichiometries. Although choosing metals that react to form high-melting-point antimonides could be employed to form a stable reaction bond, it is difficult to limit the reactivity of Sb in YMS such that the electrode is not completely consumed at an operating temperature of 1,000 C. Previous attempts to form suitable metallization layers resulted in poor bonding, complete consumption of the metallization layer or fracture within the YMS thermoelement (or leg).

Firdosy, Samad↗
NASA NTRS1996

Analysis of space radiation data of semiconductor memories

This article presents an analysis of radiation effects for several select device types and technologies aboard the Combined Release and Radiation Effects Satellite (CRRES) satellite. These space-flight measurements covered a period of about 14 months of mission lifetime. Single Event Upset (SEU) data of the investigated devices from the Microelectronics Package (MEP) were processed and analyzed. Valid upset measurements were determined by correcting for invalid readings, hard failures, missing data tapes (thus voids in data), and periods over which devices were disabled from interrogation. The basic resolution time of the measurement system was confirmed to be 2 s. Lessons learned, important findings, and recommendations are presented.

Flight Experiment↗
NASA NTRS1979

Modelling switching-time effects in high-frequency power conditioning networks

Power transistor networks which switch large currents in highly inductive environments are beginning to find application in the hundred kilohertz switching frequency range. Recent developments in the fabrication of metal-oxide-semiconductor field-effect transistors in the power device category have enhanced the movement toward higher switching frequencies. Models for switching devices and of the circuits in which they are imbedded are required to properly characterize the mechanisms responsible for turning on and turning off effects. Easily interpreted results in the form of oscilloscope-like plots assist in understanding the effects of parametric studies using topology oriented computer-aided analysis methods.

Owen, H. A.↗
NASA NTRS1981

Proton-induced noise in digicons

The Space Telescope, which carries four Digicons, will pass several times per day through a low-altitude portion of the radiation belt called the South Atlantic Anomaly. This is expected to create interference in what is otherwise anticipated to be a noise-free device. Two essential components of the Digicon, the semiconductor diode array and the UV transmitting window, generate noise when subjected to medium-energy proton radiation, a primary component of the belt. These trapped protons, having energies ranging from 2 to 400 Mev and fluences at the Digicon up to 4,000 P+/sec-sq cm, pass through both the window and the diode array, depositing energy in each. In order to evaluate the effect of these protons, engineering test models of Digicon tubes to be flown on the High Resolution Spectrograph were irradiated with low-flux monoenergetic proton beams at the University of Maryland cyclotron. Electron-hole pairs produced by the protons passing through the diodes or the surrounding bulk caused a background count rate. This is the result of holes diffusing over a distance of many diode spacings, causing counts to be triggered simultaneously in the output circuits of several adjacent diodes. Pulse-height spectra of these proton-induced counts indicate that most of the bulk-related counts overlap the single photoelectron peak. A geometrical model will be presented of the charge collection characteristics of the diode array that accounts for most of the observed effects.

Smith, L. C.↗
NASA NTRS1989

Pulsed Molecular Beams For Growth Of InAs On GaAs

Pauses for annealing reduce number of defects. Deposition process that includes pulsed molecular beams produces high-quality epitaxial layers of indium arsenide on gallium arsenide substrates. Layers made as much as 30 atoms thick without introducing excessive numbers of dislocations, despite 7.4-percent mismatch between InAs and GaAs crystal lattices. Layers offer superior electrical properties in such devices as optically addressed light modulators, infrared sensors, semiconductor lasers, and high-electron-mobility transistors. Technique applicable to other epitaxial systems in which lattices highly mismatched.

Grunthaner, Frank J.↗
NASA NTRS1989

Stable isotope laser spectroscopy

Recent advances in semiconductor laser technology have produced a reliable lightweight device ideally suited for a spacecraft high resolution molecular spectrometer. Lead-salt tunable diode lasers (TDL) emit in several spectral modes, each with a very narrow linewidth of -0.0003/cm. This spectral resolution is much narrower than typical Doppler broadened molecular linewidths in the mid-IR range. Thus it is possible to detect individual rotational lines within the vibrational band and measure their intensity, which can be used to determine gas concentration. The narrow spectral lines of any impurity gas tend to lie between the narrow lines of the gas of interest. This represents a major advantage over the accepted gas chromatograph mass spectrometer (GCMS) technique for measuring gas concentrations and isotope ratios. The careful and extensive gas purification procedures required to remove impurities for reliable GCMS measurements will not be required for an IR laser gas analysis. The infrared laser gas analysis technique is being developed to measure stable isotopic ratios of gases such as CO2, CH4, N2O, and NH3. This will eventually lead to development of instruments capable of in situ istopic measurements on planets such as Mars. The carbon (C-12, C-13) isotope ratio is indicative of the type of carbon fixation mechanisms (e.g., photosynthesis, respiration) in operation on a planet, while the nitrogen (N-14, N-15) isotope ratio can probably be used to date nitrogen-bearing Martian samples. The absorbance ratio of two adjacent lines of CO2 in the 2300/cm (4.3 micron) region of the spectrum was measured. The precision of the measurement is presently better than 1 percent and significant improvement is anticipated as rapid sweep-integration techniques and computer controlled data acquistion capabilities are incorporated.

Becker, J. F.↗
NASA NTRS1993

Silicon carbide semiconductor technology for high temperature and radiation environments

Viewgraphs on silicon carbide semiconductor technology and its potential for enabling electronic devices to function in high temperature and high radiation environments are presented. Topics covered include silicon carbide; sublimation growth of 6H-SiC boules; SiC chemical vapor deposition reaction system; 6H silicon carbide p-n junction diode; silicon carbide MOSFET; and silicon carbide JFET radiation response.

Matus, Lawrence G.↗
NASA NTRS1994

Optically Addressable, Ferroelectric Memory With NDRO

For readout, memory cells addressed via on-chip semiconductor lasers. Proposed thin-film ferroelectric memory device features nonvolatile storage, optically addressable, nondestructive readout (NDRO) with fast access, and low vulnerability to damage by ionizing radiation. Polarization switched during recording and erasure, but not during readout. As result, readout would not destroy contents of memory, and operating life in specific "read-intensive" applications increased up to estimated 10 to the 16th power cycles.

Thakoor, Sarita↗
NASA NTRS2006

Temperature-dependent Refractive Index of Silicon and Germanium

Silicon and germanium are perhaps the two most well-understood semiconductor materials in the context of solid state device technologies and more recently micromachining and nanotechnology. Meanwhile, these two materials are also important in the field of infrared lens design. Optical instruments designed for the wavelength range where these two materials are transmissive achieve best performance when cooled to cryogenic temperatures to enhance signal from the scene over instrument background radiation. In order to enable high quality lens designs using silicon and germanium at cryogenic temperatures, we have measured the absolute refractive index of multiple prisms of these two materials using the Cryogenic, High-Accuracy Refraction Measuring System (CHARMS) at NASA's Goddard Space Flight Center, as a function of both wavelength and temperature. For silicon, we report absolute refractive index and thermo-optic coefficient (dn/dT) at temperatures ranging from 20 to 300 K at wavelengths from 1.1 to 5.6 pin, while for germanium, we cover temperatures ranging from 20 to 300 K and wavelengths from 1.9 to 5.5 microns. We compare our measurements with others in the literature and provide temperature-dependent Sellmeier coefficients based on our data to allow accurate interpolation of index to other wavelengths and temperatures. Citing the wide variety of values for the refractive indices of these two materials found in the literature, we reiterate the importance of measuring the refractive index of a sample from the same batch of raw material from which final optical components are cut when absolute accuracy greater than k5 x 10" is desired.

Frey, Bradley J.↗
NASA NTRS2013

Compact Full-Field Ion Detector System for CubeSat Science Beyond LEO

NASA Glenn Research Center (GRC) is applying its expertise and facilities in harsh environment instrumentation to develop a Compact Full-Field Ion Detector System (CFIDS). The CFIDS is designed to be an extremely compact, low cost instrument, capable of being flown on a wide variety of deep space platforms, to provide comprehensive (composition, velocity, and direction) in situ measurements of heavy ions in space plasma environments with higher fidelity, than previously available.

Extraterrestrial Radiation↗
NASA NTRS1995

Advanced Laser Processing of Materials--Fundamentals and Applications

Preparation of amorphous thin films in semiconductors and their transition to the crystalline phase may apply to switching devices. Surfaces of single crystal samples of bulk In2Se3 and thin films of InSe were treated using an excimer laser, and microscopic examination showed the treated portions of the surface had become amorphous. Film samples of InSe were laser-treated like the bulk samples. Examination of these treated flims showed shifts in the optical transmittance spectra as well as surface morphology changes.

amorphous thin films semiconductors crystalline ph↗
NASA NTRS2011

Thermoelectric Performance Enhancement by Surrounding Crystalline Semiconductors with Metallic Nanoparticles

Direct conversion of thermal energy to electricity by thermoelectric (TE) devices may play a key role in future energy production and utilization. However, relatively poor performance of current TE materials has slowed development of new energy conversion applications. Recent reports have shown that the dimensionless Figure of Merit, ZT, for TE devices can be increased beyond the state-of-the-art level by nanoscale structuring of materials to reduce their thermal conductivity. New morphologically designed TE materials have been fabricated at the NASA Langley Research Center, and their characterization is underway. These newly designed materials are based on semiconductor crystal grains whose surfaces are surrounded by metallic nanoparticles. The nanoscale particles are used to tailor the thermal and electrical conduction properties for TE applications by altering the phonon and electron transport pathways. A sample of bismuth telluride decorated with metallic nanoparticles showed less thermal conductivity and twice the electrical conductivity at room temperature as compared to pure Bi2Te3. Apparently, electrons cross easily between semiconductor crystal grains via the intervening metallic nanoparticle bridges, but phonons are scattered at the interfacing gaps. Hence, if the interfacing gap is larger than the mean free path of the phonon, thermal energy transmission from one grain to others is reduced. Here we describe the design and analysis of these new materials that offer substantial improvements in thermoelectric performance.

Kim, Hyun-Jung↗