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At least 721 records · Page 40

Effect of atomic layer deposition growth temperature on the interfacial characteristics of HfO{sub 2}/p-GaAs metal-oxide-semiconductor capacitors

The effect of atomic layer deposition (ALD) growth temperature on the interfacial characteristics of p-GaAs MOS capacitors with ALD HfO{sub 2} high-k dielectric using tetrakis(ethylmethyl)amino halfnium precursor is investigated in this study. Using the combination of capacitance-voltage (C-V) and X-ray photoelectron spectroscopy (XPS) measurements, ALD growth temperature is found to play a large role in controlling the reaction between interfacial oxides and precursor and ultimately determining the interface properties. The reduction of surface oxides is observed to be insignificant for ALD at 200 °C, while markedly pronounced for growth at 300 °C. The corresponding C-V characteristics are also shown to be ALD temperature dependent and match well with the XPS results. Thus, proper ALD process is crucial in optimizing the interface quality.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Interface engineering in epitaxial growth of layered oxides via a conducting layer insertion

There is a long-standing challenge in the fabrication of layered oxide epitaxial films due to their thermodynamic phase-instability and the large stacking layer number. Recently, the demand for high-quality thin films is strongly pushed by their promising room-temperature multiferroic properties. Here, we find that by inserting a conducting and lattice matched LaNiO{sub 3} buffer layer, high quality m = 5 Bi{sub 6}FeCoTi{sub 3}O{sub 18} epitaxial films can be fabricated using the laser molecular beam epitaxy, in which the atomic-scale sharp interface between the film and the metallic buffer layer explains the enhanced quality. The magnetic and ferroelectric properties of the high quality Bi{sub 6}FeCoTi{sub 3}O{sub 18} films are studied. This study demonstrates that insertion of the conducting layer is a powerful method in achieving high quality layered oxide thin films, which opens the door to further understand the underline physics and to develop new devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Scaled ZrO{sub 2} dielectrics for In{sub 0.53}Ga{sub 0.47}As gate stacks with low interface trap densities

ZrO{sub 2} dielectrics were grown on n-In{sub 0.53}Ga{sub 0.47}As channels by atomic layer deposition, after employing an in-situ cyclic nitrogen plasma/trimethylaluminum surface cleaning procedure. By scaling the ZrO{sub 2} thickness, accumulation capacitance densities of 3.5 μF/cm{sup 2} at 1 MHz are achieved. The midgap interface trap density is estimated to be in the 10{sup 12} cm{sup −2} eV{sup −1} range. Using x-ray photoelectron spectroscopy, it was shown that the interface contained the oxides of In, Ga, and Al, but no As-oxides or As-As bonds within the detection limit. The results allow for insights into the effective passivation of these interfaces.

36 MATERIALS SCIENCE↗

Enhanced steam oxidation resistance of uranium nitride nuclear fuel pellets

Here, the steam oxidation resistance of UN and UN-(20 vol%)ZrN fuel pellets is evaluated to enhance understanding of steam corrosion mechanisms in advanced nuclear fuel materials. In situ neutron diffraction shows the modified UN fuel pellets form a (U 0.77 ,Zr 0.23 )N solid-solution and the sole crystalline oxidation product detected in bulk is (U 0.77 ,Zr 0.23 )O 2 . U 2 N 3 is not detected in significant quantities during the steam oxidation of UN or (U 0.77 ,Zr 0.23 )N and stable lattice parameters show that hydriding does not take place. Steam oxidation rates, obtained via sequential Rietveld refinement show how (U 0.77 ,Zr 0.23 )N has a higher activation energy (79 ± 1 kJmol -1 vs. 50 ± 5 kJmol -1 ), higher onset temperature (430 °C vs. 400 °C) and slower reaction rates for steam oxidation up to 616 °C, than pure UN. Throughout, both UN and (U 0.77 ,Zr 0.23 )N exhibit linear (non-protective) oxidation kinetics, signifying that degradation of the fuel pellets is caused by the evolution of gaseous products at the interface followed by oxide scale spallation. This quantitative and mechanistic understanding of material degradation enables better defined operating regimes and points towards (U,Zr)N solid solutions as a promising strategy for the design of advanced nuclear fuel materials with enhanced steam corrosion resistance.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Oxidative Segregation of Group V Dopants in CdTe Solar Cells

Transparent conductive oxides are used in many technologies and it is important to understand their interfacial chemical reactions. Here, we use recently developed thermomechanical cleaving and X-ray photoelectron spectroscopy to probe oxidation states at the SnO 2 interface of CdTe solar cells. We show that tin oxide promotes the formation of nanometer-scale oxides of tellurium and sulfur, largely during CdCl 2 /O 2 activation. Surprisingly, in copper-doped devices, relatively low temperature anneals (180-260 degrees C) to diffuse and activate copper acceptors also cause significant oxidation changes at the front interface, providing a heretofore missing aspect of how back contact processes can modify device transport, recombination, and performance. For Group V-doped devices, this same oxidation process causes segregation of the dopants to the SnO 2 interface in their oxidized states, implying that adjacent regions in the absorber have been depleted of dopants. Intriguingly, we demonstrate that because of their layered, van der Walls-bonded crystal structure, spatially segregated Group V oxides may represent a mechanically weak layer in a finished device.

14 SOLAR ENERGY↗

In situ TEM study of the transitions between crystalline Si and nonstoichiometric amorphous oxide under bipolar voltage bias

The electrical responses, either structurally or chemically, at the interface between a SiO 2 thin film and a single crystalline Si substrate are an important research subject in Si-based devices. Dielectric breakdown-induced epitaxial migration of Si into SiO 2 has been reported as a degradation mechanism in field effect transistors (FETs). Here, we show a direct observation of electric field induced conversion of single crystalline Si to nonstoichiometric amorphous oxide starting from the Si/native oxide interface using in situ transmission electron microscopy (TEM). We further show that nanocrystalline Si can form in the amorphous oxide under a voltage bias of reversed polarity. Electron energy loss spectroscopy and energy dispersive X-ray spectroscopy analyses indicate that the observed amorphization process was caused by the oxidation of Si and the recrystallization process was caused by the reduction of nonstoichiometric amorphous silicon oxide. Furthermore, both transitions are a result of field-driven directional migration of oxygen which originally comes from its native oxide layer.

36 MATERIALS SCIENCE↗

Reduced graphene oxide based silver sulfide hybrid films formed at a liquid/liquid interface

Free-standing, ultra-thin films of silver sulfide and reduced graphene oxide (RGO) based silver sulfide hybrids are prepared at a liquid/liquid interface employing in situ chemical reaction strategy. Ag{sub 2}S and RGO−Ag{sub 2}S hybrid films are characterized by various techniques such as UV-visible and photo luminescence spectroscopy, X-ray diffraction and scanning electron microscopy. The morphology of hybrid films consists of Ag{sub 2}S nanocrystals on RGO surface while Ag{sub 2}S films contains branched network of dendritic structures. RGO−Ag{sub 2}S exhibit interesting optical and electrical properties. The hybrid films absorb in the region 500–650 nm and show emission in the red region. A higher conductance is observed for the hybrid films arising from the RGO component. This simple low cost method can be extended to prepare other RGO based metal sulfides.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

First Principles Determination of the Potential-of-Zero-Charge in an Alumina-Coated Aluminum/Water Interface Model for Corrosion Applications

The surfaces of most metals immersed in aqueous electrolytes have a several-nanometer-thick oxide/hydroxide surface layer. This gives rise to the existence of both metal|oxide and oxide|liquid electrotlyte interfaces, and makes it challenging to correlate atomic length-scale structures with electrochemical properties such the potential-of-zero-charge (PZC). The PZC has been shown to be correlated the onset potential for pitting corrosion. Here, we conduct large-scale Density Functional Theory and ab initio molecular dynamics to calculate the PZC of a Al(111)| γ -Al 2 O 3 (110)| water double-interface model within the context of aluminum corrosion. By partitioning the multiple interfaces involved into binary components with additive contributions to the overall work function and voltage, we predict the PZC to be -1.53 V vs SHE for this model. Furthermore, we calculate the orbital energy levels of defects like oxygen vacancies in the oxide, which are critical parameters in theories associated with pitting corrosion. We predict that the Fermi level at the PZC lies above the impurity defect levels of the oxygen vacancies, which are therefore uncharged at the PZC. From the PZC estimate, we predict the voltage needed to create oxygen vacancies with net positive charges within a flatband approximation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Interface Defect Engineering for Improved Graphene-Oxide-Semiconductor Junction Photodetectors

The deeply depleted graphene-oxide-semiconductor (D 2 GOS) junction detector provides an effective architecture for photodetection, enabling direct readout of photogenerated charge. Because of an inherent gain mechanism proportional to graphene’s high mobility (μ), this detector architecture exhibits large responsivities and signal-to-noise ratios (SNR). The ultimate sensitivity of the D2GOS junction detector may be limited, however, because of the generation of dark charge originating from interface states at the semiconductor/dielectric junction. Here, we examine the performance limitations caused by dark charge and demonstrate its mitigation via the creation of low interface defect junctions enabled by surface passivation. The resulting devices exhibit responsivities exceeding 10 000 A/W—a value which is 10× greater than that of analogous devices without the passivating thermal oxide. Finally, with cooling of the detector, the responsivity further increases to over 25 000 A/W, underscoring the impact of surface generation on performance and thus the necessity of minimizing interfacial defects for this class of photodetector.

2D detector↗

Co{sub 2}FeAl based magnetic tunnel junctions with BaO and MgO/BaO barriers

We succeed to integrate BaO as a tunneling barrier into Co{sub 2}FeAl based magnetic tunnel junctions (MTJs). By means of Auger electron spectroscopy it could be proven that the applied annealing temperatures during BaO deposition and afterwards do not cause any diffusion of Ba neither into the lower Heusler compound lead nor into the upper Fe counter electrode. Nevertheless, a negative tunnel magnetoresistance (TMR) ratio of -10% is found for Co{sub 2}FeAl (24 nm) / BaO (5 nm) / Fe (7 nm) MTJs, which can be attributed to the preparation procedure and can be explained by the formation of Co- and Fe-oxides at the interfaces between the Heusler and the crystalline BaO barrier by comparing with theory. Although an amorphous structure of the BaO barrier seems to be confirmed by high-resolution transmission electron microscopy (TEM), it cannot entirely be ruled out that this is an artifact of TEM sample preparation due to the sensitivity of BaO to moisture. By replacing the BaO tunneling barrier with an MgO/BaO double layer barrier, the electric stability could effectively be increased by a factor of five. The resulting TMR effect is found to be about +20% at room temperature, although a fully antiparallel state has not been realized.

36 MATERIALS SCIENCE↗

Laterally configured resistive switching device based on transition-metal nano-gap electrode on Gd oxide

We have developed a fabrication process for a laterally configured resistive switching device based on a Gd oxide. A nano-gap electrode connected by a Gd oxide with the ideal interfaces has been created by adapting the electro-migration method in a metal/GdO{sub x} bilayer system. Bipolar set and reset operations have been clearly observed in the Pt/GdO{sub x} system similarly in the vertical device based on GdO{sub x}. Interestingly, we were able to observe a clear bipolar switching also in a ferromagnetic CoFeB nano-gap electrode with better stability compared to the Pt/GdO{sub x} device. The superior performance of the CoFeB/GdO{sub x} device implies the importance of the spin on the resistive switching.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

A Dual Stage Sodium Thermo-Electro-Chemical Converter

The need for reliable and distributable energy sources is evident given the current forecasting of the world’s energy demand [1]. One prominent obstacle is the lack of an efficient direct heat-to-electricity conversion technology. The sodium thermo-electro-chemical converter (Na-TECC) is a highly efficient thermally regenerative electrochemical system (TRES) that can fill this void. The advantage of the Na-TECC over other direct conversion technologies is that it is a closed device (unlike fuel cells) requiring nothing more than a heat input (similar to thermoelectrics). It also has a high power density (> 1 W/cm2) and specific power up to 0.5 kW/kg , with the potential to achieve > 45% heat to electricity conversion efficiencies [2]. Furthermore, the converter rejects heat at a temperature hot enough to make it amenable for cogeneration, potentially under air-cooled operation. This electrochemical technology uses a special ion-selective solid-electrolyte called beta-alumina (Na2O•11Al2O3), that is highly conductive to sodium cations. A more conducting variation of this compound is beta”-alumina (Na2O•MgO•5Al2O3), where the magnesium acts as a stabilizer [3]. In the device, liquid sodium enters an evaporator where it is heated isobarically and vaporizes. The vapor is then oxidized at the interface between the anode and the solid-electrolyte. The Na-TECC generates electric power by allowing the high pressure oxidized sodium vapor ions to expand isothermally through the solid-electrolyte from the anode to the cathode. The liberated electrons are simultaneously conducted through an external load and recombine with the cations at the cathode. The low pressure sodium vapor is subsequently condensed and a wick pumps the liquid into the high pressure plenum to complete the cycle. Previous Na-TECCs have achieved efficiencies of 18% due to practical losses, whereas the potential efficiencies are above 45% [4]. Thermodynamic limitations and design constraints have limited previous devices from attaining these record efficiencies. Specifically, the maximum potential voltage in these previous devices was substantially reduced by the kinetic limitations of the charge transfer in the cathode (referred to as the overpotential) and by Joule heating losses due to the solid-electrolyte resistance, electrode resistance, and current collector resistance. Moreover, previous devices experienced a steady loss in performance throughout their lifetime. The drop in performance has been attributed to the electrolyte undergoing thermal and chemical breakdown due to crack propagation, loss of sodium oxide, and the formation of molten dendrites that create electrical shorts [5]. Finally, previous designs have also had a substantial problem with proper thermal management, with some showing thermal losses as great as 50% of the heat input. To improve the efficiency, a dual stage conversion process is being explored. Rather than using one isothermal expansion step, the dual cycle will employ two separate electrolytes to allow two separate expansion steps: one at the high temperature, and another at an intermediate temperature. This new cycle is thermodynamically favorable as it allows for regeneration from the isobaric cooling of the first expansion step, and reheat to complete the expansion in the second step. This allows the engine to reach a lower condenser temperature than its single stage counterpart, thus increasing the overall efficiency. The temperature drop across each electrolyte in the dual stage device (e.g., ~ 400 K) is smaller than the temperature drop across a comparable single stage device (e.g., ~ 800 K). This is amenable for better thermal management and allows for less heat loss. This will also mitigate the thermal shock across the very thin (< 1 mm) solid electrolytes, reduce crack propagation and limit the percolation of the molten dendrites, and ultimately increase the lifetime of the device. As an additional benefit the dual stage can be designed using planer geometries, rather than tubular geometries used in previous single stage models, which can be manufactured less expensively. This modified geometry can be tailored to improve the thermal management by reducing the radiation losses, which has been the biggest source of thermal losses [2]. A dual stage concept for the Na-TECC has never been demonstrated in literature. In this presentation, the operation of a single stage device will be revisited and, by adopting concepts used for similar converters, the thermodynamic operation of the dual stage will be developed [6]. Using the dual stage approach, the efficiency and power equations have been redefined to include regeneration and reheat. Questions such as what current densities optimize the power output or which intermediate temperature maximizes the efficiency will also be answered. Initial calculations of the dual stage show that the thermal management is the most sensitive parameter. Although the ideal voltage produced by the dual stage can be higher, there are potential drawbacks. For example, by using a lower condenser temperature the dual stage device will have a higher open circuit voltage, but it will also have a larger overpotential due to the limited cathodic kinetics that occur at a lower temperature. In short, there are several trade-offs in this device that need to be balanced. It will be demonstrated that the dual stage device must have lower thermal losses than a single stage device if it is to have a higher efficiency.

14 SOLAR ENERGY↗

Synergistically Enhancing the Therapeutic Effect of Radiation Therapy with Radiation Activatable and Reactive Oxygen Species-Releasing Nanostructures

Nanoparticle-based radio-sensitizers can amplify the effects of radiation therapy on tumor tissue even at relatively low concentrations while reducing the potential side effects to healthy surrounding tissues. In this study, we investigated a hybrid anisotropic nanostructure, composed of gold (Au) and titanium dioxide TiO 2 , as a radio-sensitizer for radiation therapy of triple negative breast cancer (TNBC). In contrast to other gold-based radio sensitizers, dumbbell-like Au-TiO 2 nanoparticles (DATs) show a synergistic therapeutic effect on radiation therapy, mainly because of strong asymmetric electric coupling between the high atomic number metals and dielectric oxides at their interfaces. The generation of secondary electrons and reactive oxygen species (ROS) from DATs triggered by X-ray irradiation can significantly enhance the radiation effect. After endocytosed by cancer cells, DATs can generate a large amount of ROS under X-ray irradiation, eventually inducing cancer cell apoptosis. Significant tumor growth suppression and overall improvement in survival rate in a TNBC tumor model have been successfully demonstrated under DATs uptake for a radio-sensitized radiation therapy.

59 BASIC BIOLOGICAL SCIENCES↗

Nanoscale viscosity of confined polyethylene oxide

Complex fluids near interfaces or confined within nanoscale volumes can exhibit substantial shifts in physical properties compared to bulk, including glass transition temperature, phase separation, and crystallization. Because studies of these effects typically use thin film samples with one dimension of confinement, it is generally unclear how more extreme spatial confinement may influence these properties. In this work, we used x-ray photon correlation spectroscopy and gold nanoprobes to characterize polyethylene oxide confined by nanostructured gratings (<100nm width) and measured the viscosity in this nanoconfinement regime to be ~500 times the bulk viscosity. Here, this enhanced viscosity occurs even when the scale of confinement is several times the polymer's radius of gyration, consistent with previous reports of polymer viscosity near flat interfaces.

36 MATERIALS SCIENCE↗

Charge Disproportionation at Twisted SrTiO 3 Bilayer Interface Driven by Local Atomic Registry

The interplay of lattice, orbital, and charge degrees of freedom in complex oxide materials has hosted a plethora of exotic quantum phases and physical properties. Recent advances in the synthesis of freestanding complex oxide membranes and twisted heterostructures assembled from membranes provide diverse opportunities for discovery using moiré design with local lattice control. To this end, we designed moiré crystals at the coincidence site lattice condition, providing commensurate structure within the moiré supercell arising from the multiatom complex oxide unit cell. We fabricated such twisted bilayers from freestanding SrTiO 3 membranes and used depth-sectioning-based electron microscopic methods to investigate ordered charge states at the moiré interface. By selectively imaging SrTiO 3 atomic planes at different depths through the bilayer, we clearly resolved the moiré periodic structure at the twisted interface and found that it exhibits lattice-dependent charge disproportionation in the local atomic registry within the moiré supercell. Density functional modeling of the twisted oxide interface predicts that these moiré phenomena are accompanied by a two-dimensional flat band that can drive exceptional electronic phases. Our work provides a robust strategy for controlling moiré periodicity in twisted oxides and paves pathways to exploit the extraordinary functionalities via moiré lattice-driven charge-orbital correlation.

charge disproportionation↗

The structure, composition, and performance impact of a YSZ-GDC interdiffusion layer in solid oxide electrolysis cells

This study provides a combined experimental and computational investigation into the structure and impact of the cation interdiffusion layer that appears at the gadolinium doped ceria (GDC)/yttria stabilized zirconia (YSZ) interface in solid oxide electrolysis cells (SOECs). Scanning transmission electron microscopy (STEM) illustrates that a ∼0.4 μm interdiffusion layer (IDL) with an intermixed cation distribution and fine grain size forms upon sintering. STEM identifies that the interdiffusion layer exists in the cubic fluorite structure despite changes in cation composition. The interdiffusion layer microstructure formed during sintering does not change during SOEC testing at either 1.3V or heightened voltage pulse testing. Modeling predicts that ionic conductivity may decrease in the interdiffusion layer due to Coulombic trapping between mobile oxygen vacancies and excess Gd 3+ acceptor dopants. Yet, the density and continuous nature of the layer should benefit cell stability by substantially reducing the formation of SrZrO 3 , which is corroborated by STEM and Synchrotron X-ray diffraction (XRD). We conclude that the interdiffusion layer acts as a beneficial barrier to Sr diffusion, when operating in a regime where electrolyte void formation is not observed.

organic↗

In-situ ETEM study of plasma-facing tungsten nanofuzz oxidation at atmospheric pressure: Microstructure evolution and substrate-free oxidation kinetics

To enable sustainable carbon-free fusion energy, managing reactor structural material degradation during normal operation as well as accident scenarios is vital. Tungsten (W) plasma-facing materials (PFMs) are susceptible to aggressive high-temperature oxidation during air-ingress fusion reactor accidents, yet there's a lack of oxidation kinetic data for irradiated tungsten. Here, in this study, we utilize atmospheric environmental transmission electron microscopy (ETEM) to present the first kinetic data for substrate-free W nanofuzz oxidation at 400 ºC and 500 ºC in 1 bar dry air. Comparison with pristine bulk W during the early parabolic stage suggests an irradiationdecelerated oxidation for W nanofuzz. Our time-resolved in-situ characterization reveals a durable amorphous surface oxide, likely promoted by high-flux He + irradiation-induced surface defects, serving as an effective passivating layer that impedes nanofuzz oxidation onset. This surface oxide layer also interfaces well with newly formed orthorhombic WO 3 , facilitated by stress relief through He bubble shrinkage, providing lasting passivating protection throughout the nanofuzz parabolic oxidation. This new finding challenges conventional notions of irradiation's negative impact on metal oxidation, and calls for advanced characterization to enhance our understanding of fusion energy materials degradation, informed by further accident modeling.

36 MATERIALS SCIENCE↗