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At least 721 records · Page 40

ASDTIC duty-cycle control for power converters.

The application of analog signal to discrete interval converter (ASDTIC), a hybrid micromodule, two-loop control subsystem, to a switching, stepdown dc-to-dc converter is described. The power circuitry, interface and ASDTIC subsystems used in this switching regulator were developed to exhibit the improved regulation, transient performance, regulator stability, and freedom from the effects of variations in parts characteristics due to environmental changes and aging. The circuitry and performance characteristics of a +10-V dc switching converter as well as that of the ASDTIC micromodule are described. Realization of the ASDTIC hybrid micromodule has been accomplished with hermetically sealed, beam-lead, bonded/deposited nichrome thin film resistors, discrete capacitors, and integrated circuits on dilithic, glazed alumina substrates, using 22 feed through terminals in an integrated package.

Lalli, V. R.↗

Low-sensitivity, frequency-selective amplifier circuits for hybrid and bipolar fabrication.

A network is described which is suitable for realizing a low-sensitivity high-Q second-order frequency-selective amplifier for high-frequency operation. Circuits are obtained from this network which are well suited for realizing monolithic integrated circuits and which do not require any process steps more critical than those used for conventional monolithic operational and video amplifiers. A single chip version using compatible thin-film techniques for the frequency determination elements is then feasible. Center frequency and bandwidth can be set independently by trimming two resistors. The frequency selective circuits have a low sensitivity to the process variables, and the sensitivity of the center frequency and bandwidth to changes in temperature is very low.

Pi, C.↗

Switched-Capacitor Voltage Multiplier

Dc-to-dc power converter multiplies input supply potential by factor of nearly 40. Design does not make use of transformers or inductors but effects voltage boost-up by capacitive energy transfer. Circuit primarily made up of banks of capacitors, connected by network of integrated-circuit relays. Converter functionally linear voltage amplifier with fixed gain figure. Bipolar in operation. Output fully floating, and excellent dc isolation between input and output terminals.

Sridharan, Govind↗

Gallium arsenide processing for gate array logic

The development of a reliable and reproducible GaAs process was initiated for applications in gate array logic. Gallium Arsenide is an extremely important material for high speed electronic applications in both digital and analog circuits since its electron mobility is 3 to 5 times that of silicon, this allows for faster switching times for devices fabricated with it. Unfortunately GaAs is an extremely difficult material to process with respect to silicon and since it includes the arsenic component GaAs can be quite dangerous (toxic) especially during some heating steps. The first stage of the research was directed at developing a simple process to produce GaAs MESFETs. The MESFET (MEtal Semiconductor Field Effect Transistor) is the most useful, practical and simple active device which can be fabricated in GaAs. It utilizes an ohmic source and drain contact separated by a Schottky gate. The gate width is typically a few microns. Several process steps were required to produce a good working device including ion implantation, photolithography, thermal annealing, and metal deposition. A process was designed to reduce the total number of steps to a minimum so as to reduce possible errors. The first run produced no good devices. The problem occurred during an aluminum etch step while defining the gate contacts. It was found that the chemical etchant attacked the GaAs causing trenching and subsequent severing of the active gate region from the rest of the device. Thus all devices appeared as open circuits. This problem is being corrected and since it was the last step in the process correction should be successful. The second planned stage involves the circuit assembly of the discrete MESFETs into logic gates for test and analysis. Finally the third stage is to incorporate the designed process with the tested circuit in a layout that would produce the gate array as a GaAs integrated circuit.

Cole, Eric D.↗

Tuners For Coplanar-Strip Transmission Lines

Sliding radio-frequency short circuits easily adjusted for optimum impedance. Tuning elements developed for use in planar integrated circuits operating at frequencies from about 10 to more than 1,000 GHz. Purpose of such adjustment to adjust impedance presented to circuit connected to nonshorted end of transmission line and thereby optimizes performance of circuit. Mixers, oscillators, amplifiers, couplers, and phase shifters among circuits improved by incorporating tuners of this type.

Mcgrath, William R.↗

System and Method for Multi-Wavelength Optical Signal Detection

The system and method for multi-wavelength optical signal detection enables the detection of optical signal levels significantly below those processed at the discrete circuit level by the use of mixed-signal processing methods implemented with integrated circuit technologies. The present invention is configured to detect and process small signals, which enables the reduction of the optical power required to stimulate detection networks, and lowers the required laser power to make specific measurements. The present invention provides an adaptation of active pixel networks combined with mixed-signal processing methods to provide an integer representation of the received signal as an output. The present invention also provides multi-wavelength laser detection circuits for use in various systems, such as a differential absorption light detection and ranging system.

McGlone, Thomas D.↗

Hybrid circuit modules for motor commutation and control

Thick film hybrid techniques are used to develop circuitry for a brushless dc motor commutator. The power commutator contains the driving circuit and an amplifier that controls the armature current. A position decoder contains digital integrated circuits which receive the signals from the armature position sensors and generate the driving signals for the power commutator in the proper sequence. These units drive motors with stall currents up to about 400 mA.

Dekramer, C.↗

Diamondlike carbon applications in infrared optics and microelectronics

The use of diamondlike carbon (DLC) as a protective coating in harsh environments is addressed. There are three topics presented. The first is a description of the preparation of DLC on seven different infrared transmitting materials, and the possibility of using DLC as an antireflecting coating at commonly used wavelengths. DLC doesn't bond easily to all materials, and special techniques for bonding are presented. The second topic deals with how well DLC will protect a substrate from moisture penetration. This is an important aspect in numerous uses of DLC, including both infrared optics and integrated circuits. The third topic is the effect of particulate impact on film performance and integrity.

Woollam, John A.↗

A grid amplifier

A 50-MESFET grid amplifier is reported that has a gain of 11 dB at 3.3 GHz. The grid isolates the input from the output by using vertical polarization for the input beam and horizontal polarization for the transmitted output beam. The grid unit cell is a two-MESFET differential amplifier. A simple calibration procedure allows the gain to be calculated from a relative power measurement. This grid is a hybrid circuit, but the structure is suitable for fabrication as a monolithic wafer-scale integrated circuit, particularly at millimeter wavelengths.

Kim, Moonil↗

Precise-Test-Pulse Generator

Precise test pulse with stable duration and amplitude needed for calibration of test equipment. Precise-test-pulse generator provides such waveform and has additional desirable features. Circuit produces single test pulses of stable duration and amplitude. Made of commercially available integrated circuits and discrete components.

Eichenberg, Dennis↗

Coupling Between Microstrip Lines Embedded in Polyimide Layers for 3D-MMICs on Si

Three-dimensional circuits built upon multiple layers of polyimide are required for constructing Si/SiGe monolithic microwave/millimeter-wave integrated circuits on CMOS (low resistivity) Si wafers. However, the closely spaced transmission lines are susceptible to high levels of coupling, which degrades circuit performance. In this paper, Finite Difference Time Domain (FDTD) analysis and measured characteristics of novel shielding structures that significantly reduce coupling between embedded microstrip lines are presented.

Ponchak, George E.↗

Coupling Between Finite Ground Coplanar Waveguides Embedded in Polyimide Layers for 3D-MMICs on Si

Three-dimensional circuits built upon multiple layers of polyimide are required for constructing Si/SiGe monolithic microwave/mm-wave integrated circuits on low resistivity Si wafers. However, the closely spaced transmission lines are susceptible to high levels of cross-coupling, which degrades the overall circuit performance. In this paper, theoretical and experimental results on coupling of Finite Ground Coplanar (FGC) waveguides embedded in polyimide layers are presented for the first time. These results show that FGC lines have approximately 8 dB lower coupling than coupled Coplanar Waveguides. Furthermore, it is shown that the forward and backward coupling characteristics for FGC lines do not resemble the coupling characteristics of other transmission lines such as microstrip.

Ponchak, George E.↗

Coupling Between Microstrip Lines with Finite Width Ground Plane Embedded in Polyimide Layers for 3D-MMICs on Si

Three-dimensional circuits built upon multiple layers of polyimide are required for constructing Si/SiGe monolithic microwave/millimeter-wave integrated circuits on complementary metal oxide semiconductor (CMOS) (low resistivity) Si wafers. Thin film microstrip lines (TFMS) with finite width ground planes embedded in the polyimide are often used. However, the closely spaced TFMS lines are susceptible to high levels of coupling, which degrades circuit performance. In this paper, Finite Difference Time Domain (FDTD) analysis and experimental measurements are used to show that the ground planes must be connected by via holes to reduce coupling in both the forward and backward directions.

Ponchak, George E.↗

Coupling Between Microstrip Lines and Finite Ground Coplanar Lines Embedded in Polyimide Layers for 3D-MMICs on Silicon

Three-dimensional circuits built upon multiple layers of polyimide are required for constructing Si/SiGe monolithic microwave/mm-wave integrated circuits on CMOS (low resistivity) Si wafers. It is expected that these circuits will replace the ones fabricated on GaAs and reduce the overall system cost. However, the closely spaced transmission lines that are required for a high-density circuit environment are susceptible to high levels of cross-coupling, which degrades the overall circuit performance. In this paper, theoretical and experimental results on coupling and ways to reduce it are presented for two types of transmission lines: a) the microstrip line and b) the Finite Ground Coplanar (FGC) line. For microstrip lines it is shown that a fence of metalized via-holes can significantly reduce coupling, especially in the case when both lines are on the same polyimide layer or when the shielding structure extends through several polyimide layers. For closely spaced microstrip lines, coupling is lower for a metal filled trench shield than a via-hole fence. Coupling amongst microstrip lines is dependent on the ratio of line separation to polyimide thickness and is primarily due to magnetic fields. For FGC lines it is shown that they have in general low coupling that can be reduced significantly when there is even a small gap between the ground planes of each line. FGC lines have approximately 8 dB lower coupling than coupled coplanar waveguides (CPW). In addition, forward and backward characteristics of the FGC lines do not resemble those of other transmission lines such as microstrip. Therefore, the coupling mechanism of the FGC lines is different compared to thin film microstrip lines.

Ponchak, G. E.↗

Optoelectronic Receiver For Communication And Control

Many operational and diagnostic features integrated into circuit chip. GaAs-based integrated circuit designed to serve as optoelectronic interface in phased-array antenna. Intended function to receive digital control signals transmitted on optical fiber and to convert signals to electronic control signals, which then applied to monolithic microwave integrated circuit (MMIC). Also used in reception of high-rate optical digital communications within computers, between computers, and in signal-distribution systems in aircraft, automobiles, and ships. Interface circuit represents significant improvement over preexisting interface circuits in that its clock-signal-recovery subcircuit requires little or no preamble for immediate synchronization.

Kunath, Richard↗

Simulating Single-Event Upsets in Bipolar RAM's

Simulation technique saves testing. Uses interactive version of SPICE (Simulation Program with Integrated Circuit Emphasis). Device and subcircuit models available in software used to construct macromodel for an integrated bipolar transistor. Time-dependent current generators placed inside transistor macromodel to simulate charge collection from ion track. Significant finding of experiments is standard design practice of reducing power in unaddressed bipolar RAM cell increases sensitivity of cell to single-event upsets.

Zoutendyk, J. A.↗