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NASA NTRS1998

The Algorithm for MODIS Wavelength On-Orbit Calibration Using the SRCA

The Spectro-Radiometric Calibration Assembly (SRCA) provides on-orbit spectral calibration of the MODerate resolution Imaging Spectroradiometer (MODIS) reflected solar bands and this paper describes how it is accomplished. The SRCA has two adjacent exit slits: 1) Main slit and 2) Calibration slit. The output from the main slit is measured by a reference silicon photo-diode (SIPD) and then passes through the MODIS. The output from the calibration slit passes through a piece of didymium transmission glass and then it is measured by a calibration SIPD. The centroids of the sharp spectral peaks of a didymium glass are utilized as wavelength standards. After normalization using the reference SIPD signal to eliminate the effects of the illuminating source spectra, the calibration SIPD establishes the relationship between the peaks of the didymium spectra and the grating angle; this is accomplished through the grating equation. In the grating equation the monochromator parameters, Beta (half angle between the incident and diffractive beams) and Theta(sub off) (offset angle of the grating motor) are determined by matching, in a least square sense, the known centroid wavelengths of the didymium peaks and the calculated centroid grating angles from the calibration SIPD signals for the peaks. A displacement between the calibration SIPD and the reference SIPD complicates the signal processing.

Montgomery, Harry↗

NASA NTRS1997

The Algorithm for MODIS Wavelength On-Orbit Calibration using the SRCA

The Spectro-Radiometric Calibration Assembly (SRCA) provides on-orbit spectral calibration of the MODerate resolution Imaging Spectroradiometer (MODIS) reflected solar bands and this paper describes how it is accomplished. The SRCA has two adjacent exit slits: 1) Main slit and 2) Calibration slit. The output from the main slit is measured by a reference silicon photo-diode (SIPD) and then passes through the MODIS. The output from the calibration slit passes through a piece of didymium transmission glass and then it is measured by a calibration SIPD. The centroids of the sharp spectral peaks of a didyrnium glass are utilized as wavelength standards. After normalization using the reference SIPD signal to eliminate the effects of the illuminating source spectra, the calibration SIPD establishes the relationship between the peaks of the didymium spectra and the grating angle; this is accomplished through the grating equation. In the grating equation the monochromator parameters, beta (half angle between the incident and diffractive beams) and theta(sub ff) (offset angle of the grating motor) are determined by matching, in a least square sense, the known centroid wavelengths of the didymium peaks and the calculated centroid grating angles from the calibration SIPD signals for the peaks. A displacement between the calibration SIPD and the reference SIPD complicates the signal processing. The response of the MODIS bands to the SRCA output is also normalized by the reference SIPD signal to eliminate the effect of the source spectrum. That response differs from what is measured by MODIS using the Spectral Measurements Assembly (SpMA), a laboratory double-monochromator, due to the wider slit width of the SRCA. The SRCA slit function, calculated using measurements by the SPMA and the SRCA at the same MODIS temperature, will be used to recover the MODIS spectral response using the SRCA data measured on-orbit.

Montgomery, Harry↗

DOE OSTI2020

Near field excited state imaging via stimulated electron energy gain spectroscopy of localized surface plasmon resonances in plasmonic nanorod antennas

Continuous wave (cw) photon stimulated electron energy loss and gain spectroscopy (sEELS and sEEGS) is used to image the near field of optically stimulated localized surface plasmon resonance (LSPR) modes in nanorod antennas. An optical delivery system equipped with a nanomanipulator and a fiber-coupled laser diode is used to simultaneously irradiate plasmonic nanostructures in a (scanning) transmission electron microscope. The nanorod length is varied such that the m = 1, 2, and 3 LSPR modes are resonant with the laser energy and the optically stimulated near field spectra and images of these modes are measured. Various nanorod orientations are also investigated to explore retardation effects. Optical and electron beam simulations are used to rationalize the observed patterns. As expected, the odd modes are optically bright and result in observed sEEG responses. The m = 2 dark mode does not produce a sEEG response, however, when tilted such that retardation effects are operative, the sEEG signal emerges. Thus, we demonstrate that cw sEEGS is an effective tool in imaging the near field of the full set of nanorod plasmon modes of either parity.

36 MATERIALS SCIENCE↗

NASA NTRS1974

Energy-conversion research and development with diminiodes

Diminiodes are variable-gap cesium diodes with plane emitters and guarded collectors a few millimeters in diameter. This miniaturization allows the electrodes to be made of little pieces of rare materials like single crystals of unusual metals or metallides. In addition to smallness, diminiode advantages include simplicity, precision, fabrication ease, parts interchangeability, cleanliness, full instrumentation, ruggedness, and economy. The diminiode design also stresses effective, economical use with computers that control, collect, and correlate thermionic current and voltage data. Such diminiode tests completed recently for ultrapure metal electrodes produced relatively low, sharply defined ultimate power outputs.

Morris, J. F.↗

NASA NTRS1990

Linear laser diode arrays for improvement in optical disk recording for space stations

The design and fabrication of individually addressable laser diode arrays for high performance magneto-optic recording systems are presented. Ten diode arrays with 30 mW cW light output, linear light vs. current characteristics and single longitudinal mode spectrum were fabricated using channel substrate planar (CSP) structures. Preliminary results on the inverse CSP structure, whose fabrication is less critically dependent on device parameters than the CSP, are also presented. The impact of systems parameters and requirements, in particular, the effect of feedback on laser design is assessed, and techniques to reduce feedback or minimize its effect on systems performance, including mode-stabilized structures, are evaluated.

Alphonse, G. A.↗

NASA NTRS1995

Resonant Tunneling Analog-To-Digital Converter

As sampling rates continue to increase, current analog-to-digital converter (ADC) device technologies will soon reach a practical resolution limit. This limit will most profoundly effect satellite and military systems used, for example, for electronic countermeasures, electronic and signal intelligence, and phased array radar. New device and circuit concepts will be essential for continued progress. We describe a novel, folded architecture ADC which could enable a technological discontinuity in ADC performance. The converter technology is based on the integration of multiple resonant tunneling diodes (RTD) and hetero-junction transistors on an indium phosphide substrate. The RTD consists of a layered semiconductor hetero-structure AlAs/InGaAs/AlAs(2/4/2 nm) clad on either side by heavily doped InGaAs contact layers. Compact quantizers based around the RTD offer a reduction in the number of components and a reduction in the input capacitance Because the component count and capacitance scale with the number of bits N, rather than by 2 (exp n) as in the flash ADC, speed can be significantly increased, A 4-bit 2-GSps quantizer circuit is under development to evaluate the performance potential. Circuit designs for ADC conversion with a resolution of 6-bits at 25GSps may be enabled by the resonant tunneling approach.

Broekaert, T. P. E.↗

NASA NTRS2007

Gratings and Random Reflectors for Near-Infrared PIN Diodes

Crossed diffraction gratings and random reflectors have been proposed as means to increase the quantum efficiencies of InGaAs/InP positive/intrinsic/ negative (PIN) diodes designed to operate as near-infrared photodetectors. The proposal is meant especially to apply to focal-plane imaging arrays of such photodetectors to be used for near-infrared imaging. A further increase in quantum efficiency near the short-wavelength limit of the near-infrared spectrum of such a photodetector array could be effected by removing the InP substrate of the array. The use of crossed diffraction gratings and random reflectors as optical devices for increasing the quantum efficiencies of quantum-well infrared photodetectors (QWIPs) was discussed in several prior NASA Tech Briefs articles. While the optical effects of crossed gratings and random reflectors as applied to PIN photodiodes would be similar to those of crossed gratings and random reflectors as applied to QWIPs, the physical mechanisms by which these optical effects would enhance efficiency differ between the PIN-photodiode and QWIP cases: In a QWIP, the multiple-quantum-well layers are typically oriented parallel to the focal plane and therefore perpendicular or nearly perpendicular to the direction of incidence of infrared light. By virtue of the applicable quantum selection rules, light polarized parallel to the focal plane (as normally incident light is) cannot excite charge carriers and, hence, cannot be detected. A pair of crossed gratings or a random reflector scatters normally or nearly normally incident light so that a significant portion of it attains a component of polarization normal to the focal plane and, hence, can excite charge carriers. A pair of crossed gratings or a random reflector on a PIN photodiode would also scatter light into directions away from the perpendicular to the focal plane. However, in this case, the reason for redirecting light away from the perpendicular is to increase the length of the optical path through the detector to increase the probability of absorption of photons and thereby increase the resulting excitation of charge carriers. A pair of crossed gratings or a random reflector according to the proposal would be fabricated as an integral part of photodetector structure on the face opposite the focal plane (see figure). In the presence of crossed gratings, light would make four passes through the device before departing. In the presence of a random reflector, a significant portion of the light would make more than four passes: After each bounce, light would be scattered at a different random angle, and would have a chance to escape only when it was reflected, relative to the normal, at an angle less than the critical angle for total internal reflection. Given the indices of refraction of the photodiode materials, this angle would be about 17 . This amounts to a very narrow cone for escape of trapped light.

Gunapala, Sarath↗

NASA NTRS2007

Procedures for Tuning a Multiresonator Photonic Filter

Two procedures have been devised for tuning a photonic filter that comprises multiple whispering-gallery mode (WGM) disk resonators. As used here, tuning signifies locking the filter to a specific laser frequency and configuring the filter to obtain a desired high-order transfer function. The main problem in tuning such a filter is how to select the correct relative loading of the resonators to realize a prescribed filter function. The first of the two procedures solves this problem. As temperature gradients develop during operation, the spectra of individual resonators tend to drift, primarily because of the thermorefractive effect. Thus, there arises the additional problem of how to adjust the tuning during operation to maintain the desired transfer function. The second of the two procedures solves this problem. To implement the procedures, it is necessary to incorporate the resonators into an apparatus like that of Figure 1. In this apparatus, the spectrum of each resonator can be adjusted individually, via the electro-optical effect, by adjusting a bias voltage applied to that resonator. In addition, the positions of the coupling prisms and resonators can be adjusted to increase or reduce the gaps between them, thereby reducing or increasing, respectively, the optical coupling between them. The optical power (Pi) in resonator i is monitored by use of a tracking photodiode. Another tracking diode monitors the power reflected from the input terminal (Pr), and still others monitor the input power (Pin) and output power (Po). The readings of these photodiodes are used to guide the tuning adjustments described in this paper.

Matsko, Andrey↗

DOE OSTI2021

Using Disorder to Overcome Disorder: A Mechanism for Frequency and Phase Synchronization of Diode Laser Arrays

Noise and disorder are known, in certain circumstances and for certain systems, to improve the level of coherence over that of the noise-free system. Examples include cases in which disorder enhances response to periodic signals, and those where it suppresses chaotic behavior. We report a new type of disorder-enhancing mechanism, observed in a model that describes the dynamics of external cavity-coupled semiconductor laser arrays, where disorder of one type mitigates (and overcomes) the desynchronization effects due to a different disorder source. Here, we demonstrate stabilization of dynamical states due to frequency locking and subsequently frequency locking-induced phase locking. Here, we have reduced the equations to a potential model that illustrates the mechanism behind the misalignment-induced frequency and phase synchronization.

42 ENGINEERING↗

DOE OSTI2024

2020 U.S. Lighting Market Characterization

The Lighting Market Characterization report details how many lighting products (lamps and luminaires) were installed in the U.S. as of 2020, where they were installed, and how much energy they consumed. It also highlights key changes in U.S. lighting market characteristics between 2015 and 2020. This is the fourth edition of the LMC report; previous versions were released in 2002, 2012 and 2017. By publishing summary estimates of installed stock and energy use of various general illumination lighting products, these reports help DOE and others plan effective lighting research and development programs based on changing needs.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

DOE OSTI2024

2020 U.S. Lighting Market Characterization

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

DOE OSTI2021

Colloidal quantum dot lasers

We report semiconductor nanocrystals represent a promising class of solution-processable optical-gain media that can be manipulated via inexpensive, easily scalable colloidal techniques. Due to their extremely small sizes (typically <10 nm), their properties can be directly controlled via effects of quantum confinement; therefore, they are often termed colloidal quantum dots (CQDs). In addition to size-tunable emission wavelengths, CQDs offer other benefits for lasing applications, including low optical-gain thresholds and high temperature stability of lasing characteristics. Recent progress in understanding and practical control of processes impeding light amplification in CQDs has resulted in several breakthroughs, including the demonstration of optically pumped continuous-wave lasing, the realization of optical gain with direct current electrical injection and the development of dual-function electroluminescent devices that also operate as optically pumped lasers. The purpose of this Review is to assess the status of the field of CQD lasing and discuss the existing challenges and opportunities. A particular focus is on approaches for suppressing nonradiative Auger recombination, novel optical-gain concepts enabled by strong exciton-exciton interactions and controlled CQD charging, effects of nanocrystal form factors on light amplification and practical architectures for realizing electrically pumped CQD lasers. This overview suggests that the accumulated knowledge, along with the approaches developed for manipulating the optical-gain properties of colloidal nanostructures, perfectly position the CQD field for successfully addressing a long-standing challenge: the realization of CQD-based laser diodes. Colloidal quantum dots are promising materials for realizing versatile, wavelength-tunable, solution-processed lasers. This Review surveys recent advances in colloidal quantum dot lasing, provides an in-depth analysis of outstanding challenges and discusses a path forward to implementing technologically viable lasing devices.

36 MATERIALS SCIENCE↗

NASA NTRS1993

Tunable CW diode-pumped Tm,Ho:YLiF4 laser operating at or near room temperature

A conversion efficiency of 42 percent and slope efficiency of 60 percent relative to absorbed pump power are obtained from a continuous wave diode-pumped Tm,Ho:YLiF4 laser at 2 microns with output power of 84mW at a crystal temperature of 275K. The emission spectrum is etalon tunable over a range of 7nm (16.3 cm(sup -1) centered on 2.067 microns with fine tuning capability of the transition frequency with crystal temperature at a measured rate of -0.03/(cm)K. The effective emission cross-section is measured to be 5 x 10(sup -21) cm squared. These and other aspects of the laser performance are disclosed in the context of calculated atmospheric absorption characteristics in this spectral region and potential use in remote sensing applications. Single frequency output and frequency stabilization are achieved using an intracavity etalon in conjunction with an external reference etalon.

Mcguckin, Brendan T.↗

NASA NTRS1995

Tunable CW diode-pumped Tm,Ho:YLiF4 laser operating at or near room temperature

A conversion efficiency of 42% and slope efficiency of 60% relative to absorbed pump power are obtained from a continuous wave diode-pumped Tm,Ho:YLiF4 laser at 2 microns with output power of 84 mW at a crystal temperature of 275 K. The emission spectrum is etalon tunable over a range of7 nm (16.3/cm) centered on 2.067 microns with fine tuning capability of the transition frequency with crystal temperature at a measured rate of -0.03/(cm)K. The effective emission cross-section is measured to be 5 x 10(exp -21) cm squared. These and other aspects of the laser performance are disclosed in the context of calculated atmospheric absorption characteristics in this spectral region and potential use in remote sensing applications. Single frequency output and frequency stabilization are achieved using an intracavity etalon in conjunction with an external reference etalon.

Mcguckin, Brendan T.↗

DOE OSTI2021

Impact of high-dose gamma-ray irradiation on electrical characteristics of N-polar and Ga-polar GaN p–n diodes

We investigate the impact of high-dose gamma-ray irradiation on the electrical performance of Ga-polar and N-polar GaN-based p-n diodes grown by metalorganic chemical vapor deposition. We compare the current density-voltage (J-V), capacitance-voltage (C-V), and circular transfer length method (CTLM) characteristics of the p-n diodes fabricated on Ga-polar and N-polar orientations before and after irradiation. The relative turn-on voltage increases for the Ga-polar diodes with increasing irradiation dose, while it increases initially and then starts to decrease for the N-polar diodes. The p-contact total resistance increases for Ga-polar and decreases for N-polar samples, which we attribute to the formation of point defects and additional Mg activation after irradiation. The J-V characteristics of most of the tested diodes recovered over time, suggesting the changes in the J-V characteristics are temporary and potentially due to metastable occupancy of traps after irradiation. X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) measurements reveal the existence of different types of initial defects and surface electronic states on Ga-polar and N-polar samples. Gallium vacancies (V Ga ) are dominant defects in Ga-polar samples, while nitrogen vacancies (V N ) are dominant in N-polar samples. The presence of a higher concentration of surface states on Ga-polar surfaces compared to N-polar was confirmed by calculating the band bending and the corresponding screening effect due to opposite polarization bound charge and ionized acceptors at the surface. The difference in surface stoichiometry in these two orientations is responsible for the different behavior in electrical characteristics after gamma-ray interactions.

36 MATERIALS SCIENCE↗

DOE OSTI2022

GaN-on-GaN p-i-n diodes with avalanche capability enabled by eliminating surface leakage with hydrogen plasma treatment

Traditional mesa terminations require precise angle design to reduce the electric field at the edge and surface treatment to reduce etch damage. Otherwise, the device usually suffers a premature breakdown. This work proposes the use of easy-to-implement hydrogen plasma treatment to solve the premature breakdown caused by mesa and demonstrates the avalanche capability in GaN-on-GaN p-i-n diodes. The breakdown electric field when the avalanche occurred was ∼2.3 MV/cm at room temperature for a GaN drift layer with a doping concentration of ∼7 × 1015 cm−3, which is consistent with the theoretical value. The temperature coefficient of the avalanche breakdown voltage of the devices was 4.64–4.85 × 10−4 K−1. This work shows a simple and effective approach to achieve avalanche capability in vertical GaN power devices, which can serve as an important reference for the future development of efficient and robust GaN power electronics.

Fu, Kai (ORCID:0000000294057512)↗

DOE OSTI2020

Research note: LED lighting – A global enterprise

There is considerable focus on technology manufacturing locations and the value in funding innovation when upstream products are not manufactured within a domestic economy. Light-emitting diodes (LEDs) are such an upstream product. Here, we evaluate the value added along the supply chain of luminaires, a product that utilizes LEDs, using bottom-up cost modelling. Coupling the results with analysis of shipping cost and time, this analysis examines how advances in LEDs can incentivize LED luminaire adoption leading to the potential for significant domestic manufacturing effects even if the upstream products are produced in other economies.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

NASA NTRS1988

An adaptive array antenna for mobile satellite communications

The adaptive array is linearly polarized and consists essentially of a driven lambda/4 monopole surrounded by an array of parasitic elements all mounted on a ground plane of finite size. The parasitic elements are all connected to ground via pin diodes. By applying suitable bias voltages, the desired parasitic elements can be activated and made highly reflective. The directivity and pointing of the antenna beam can be controlled in both the azimuth and elevation planes using high speed digital switching techniques. The antenna RF losses are neglible and the maximum gain is close to the theoretical value determined by the effective aperture size. The antenna is compact, has a low profile, is inexpensive to manufacture and can handle high transmitter power.

Milne, Robert↗