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At least 721 records · Page 40
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Characterization of multiterminal tandem photovoltaic devices and their subcell coupling

Three-terminal (3T) and four-terminal (4T) tandem photovoltaic (PV) devices using various materials have been increasingly reported in the literature, but measurement standards are lacking. Here, multiterminal devices measured as functions of two load variables are characterized unambiguously as functions of three device voltages or currents on hexagonal plots. We demonstrate these measurement techniques using two GaInP/GaAs tandem solar cells, with a middle contact between the two subcells, as example 3T devices with both series-connected and reverse-connected subcells. Coupling mechanisms between the subcells are quantified within the context of a simple equivalent optoelectronic circuit. Electrical and optical coupling mechanisms are most clearly revealed using coupled dark measurements. These measurements are sensitive enough to observe very small luminescent coupling from the bottom subcell to the top subcell in the prototype 3T device. Quick simplified measurement techniques are also discussed within the context of the complete characterization.

14 SOLAR ENERGY↗
DOE OSTI2021

Record-Low Thermal Boundary Resistance between Diamond and GaN-on-SiC for Enabling Radiofrequency Device Cooling

The implementation of 5G-and-beyond networks requires faster, high-performance, and power-efficient semiconductor devices, which are only possible with materials that can support higher frequencies. Gallium nitride (GaN) power amplifiers are essential for 5G-and-beyond technologies since they provide the desired combination of high frequency and high power. These applications along with terrestrial hub and backhaul communications at high power output can present severe heat removal challenges. The cooling of GaN devices with diamond as the heat spreader has gained significant momentum since device self-heating limits GaN’s performance. However, one of the significant challenges in integrating polycrystalline diamond on GaN devices is maintaining the device performance while achieving a low diamond/GaN channel thermal boundary resistance. In this study, we achieved a record-low thermal boundary resistance of around 3.1 ± 0.7 m 2 K/GW at the diamond/Si 3 N 4 /GaN interface, which is the closest to theoretical prediction to date. The diamond was integrated within ~1 nm of the GaN channel layer without degrading the channel’s electrical behavior. Furthermore, we successfully minimized the residual stress in the diamond layer, enabling more isotropic polycrystalline diamond growth on GaN with thicknesses >2 μm and a ~1.9 μm lateral grain size. More isotropic grains can spread the heat in both vertical and lateral directions efficiently. Using transient thermoreflectance, the thermal conductivity of the grains was measured to be 638 ± 48 W/m K, which when combined with the record-low thermal boundary resistance makes it a leading-edge achievement.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Semi-monolithic Integration of All-Chalcopyrite Multijunction Solar Conversion Devices via Thin-Film Bonding and Exfoliation

Here we report on a semi-monolithic integration method to circumvent processing incompatibility between materials of dissimilar classes and combine them into multijunction devices for photovoltaic and photoelectrochemical applications. Proof-of-concept all-chalcopyrite tandems were obtained by consecutive transfer of fully integrated unpatterned 1.85 eV CuGa 3 Se 5 and 1.13 eV CuInGaSe 2 PV stacks from their Mo/soda lime glass substrates onto a new single host substrate. This transfer approach consists of two key steps: (1) bonding of the solar stack (face down) onto a handle (e.g., SnO 2 :F, FTO) using a transparent conductive composite and (2) delamination of the solar stack at the chalcopyrite/Mo interface by employing a wedge-based exfoliation technique. Upon transfer onto FTO, a CuGa 3 Se 5 champion device demonstrated near-coincident photocurrent density-voltage characteristic with a baseline measurement. Then, the exfoliated CuGa 3 Se 5 single-junction stack transferred onto FTO served as the new host onto which a second fully processed CuInGaSe 2 stack was bonded (face down) onto and liberated from its Mo/SLG substrate, leading to a complete transfer of both sub-cells onto one FTO substrate. A champion semi-monolithic tandem device exhibited a power conversion efficiency of 5.04% with an open-circuit voltage, a short-circuit current density, and a fill factor of 1.24 V, 7.19 mA/cm 2 , and 56.7%, respectively. This first-time demonstration of a fully operational semi-monolithic device provides a new avenue to combine thermally, mechanically, and/or chemically incompatible thin-film material classes into tandem photovoltaic and photoelectrochemical devices while maintaining state-of-the-art sub-cell processing.

14 SOLAR ENERGY↗
DOE OSTI2025

Selective Isolation of Surface Grain Boundaries by Oxide Dielectrics Improves Cd(Se,Te) Device Performance

Cd(Se,Te) photovoltaics (PV) are the most widely deployed thin-film solar technology globally, yet continued efficiency improvements are stymied by challenges at the device hole contacts. The inclusion of solution-processed oxide layers such as AlGaO x in the contact stack has yielded improved device open-circuit voltages (V OC ) and fill factors (FF). However, contradictory mechanisms by which these layers improve the device properties have been proposed by the research community. We demonstrate in this work that an underappreciated property of such spin-coated layers is the preferential deposition at grain boundaries, a process that isolates the grain boundaries during contact metallization. The effects of grain-boundary isolation are probed by varying the coverage of solution-processed AlGaO x “barrier” layers on the Cd(Se,Te) surface, quantified by scanning Auger microscopy. Examining coverage-dependent V OC and FF, it was observed that isolating the grain boundaries during metallization is sufficient to prevent damage to the absorber that occurs in devices lacking a barrier layer, while additional coverage contributes to the increased series resistance. Such an effect is agnostic to the material used as a barrier layer, as long as the material does not itself damage the absorber. Spin-coated SiO x was used in place of AlGaO x for an equally beneficial effect. This grain-boundary isolation phenomenon is also observed during Mo deposition and in absorbers that have been contacted with a nitrogen-doped ZnTe layer. The mechanisms by which metallization may degrade the absorber are discussed, as are contact design strategies leveraging barrier layers, which may lead to improved device efficiencies.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2013

Fabrication and application of flexible, multimodal light-emitting devices for wireless optogenetics

The rise of optogenetics provides unique opportunities to advance materials and biomedical engineering, as well as fundamental understanding in neuroscience. This protocol describes the fabrication of optoelectronic devices for studying intact neural systems. Unlike optogenetic approaches that rely on rigid fiber optics tethered to external light sources, these novel devices carry wirelessly powered microscale, inorganic light-emitting diodes (μ-ILEDs) and multimodal sensors inside the brain. Here, we describe the technical procedures for construction of these devices, their corresponding radiofrequency power scavengers and their implementation in vivo for experimental application. In total, the timeline of the procedure, including device fabrication, implantation and preparation to begin in vivo experimentation, can be completed in ~3–8 weeks. Implementation of these devices allows for chronic (tested for up to 6 months) wireless optogenetic manipulation of neural circuitry in animals navigating complex natural or home-cage environments, interacting socially, and experiencing other freely moving behaviors.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2025

Cracking in polymer substrates for flexible electronic devices and its mitigation

Mechanical reliability plays a critical role in determining the durability of flexible electronic devices because of the significant mechanical stresses they experience during manufacturing and operation. Many such devices are built on sheets comprising stiff transparent-conducting oxide (TCO) electrode films on compliant polymer substrates, and it is generally assumed that the high-toughness polymer substrates do not crack. Contrary to this assumption, here we show extensive cracking in the polymer substrates during bending of a variety of TCO/polymer sheets, and a device example — flexible perovskite solar cells. Such substrate cracking, which compromises the overall mechanical integrity of the entire device, is driven by the amplified stress-intensity factor caused by the elastic mismatch at the film/substrate interface. To mitigate this substrate cracking, an interlayer-engineering approach is designed and experimentally demonstrated. This approach is potentially applicable to myriad flexible electronic devices, with stiff films on compliant substrates, for improving their durability and reliability.

42 ENGINEERING↗
DOE OSTI2020

On-device lead sequestration for perovskite solar cells

Perovskite solar cells, as an emerging high-efficiency and low-cost photovoltaic technology face challenges on their way towards commercialization. Substantial improvements have been made to device stability but potential issues with lead toxicity and leaching from devices remain relatively unexplored. The potential for lead leakage could be perceived as an environmental and public health risk when using perovskite solar cells in building-integrated photovoltaics. Here we present a chemical approach for on-device sequestration of more than 96 per cent of lead leakage caused by severe device damage. A coating of lead-absorbing material is applied to the front and back sides of the device stack. On the glass side of the front transparent conducting electrode, we use a transparent lead-absorbing molecular film containing phosphonic acid groups that bind strongly to lead. On the back (metal) electrode side, we place a polymer film blended with lead-chelating agents between the metal electrode and a standard photovoltaic packing film. The lead-absorbing films on both sides swell to absorb the lead, rather than dissolve, when subjected to water soaking, thus retaining structural integrity for easy collection of lead after damage.

14 SOLAR ENERGY↗
DOE OSTI2022

Variance-aware weight quantization of multi-level resistive switching devices based on Pt/LaAlO3/SrTiO3 heterostructures

Abstract Resistive switching devices have been regarded as a promising candidate of multi-bit memristors for synaptic applications. The key functionality of the memristors is to realize multiple non-volatile conductance states with high precision. However, the variation of device conductance inevitably causes the state-overlap issue, limiting the number of available states. The insufficient number of states and the resultant inaccurate weight quantization are bottlenecks in developing practical memristors. Herein, we demonstrate a resistive switching device based on Pt/LaAlO 3 /SrTiO 3 (Pt/LAO/STO) heterostructures, which is suitable for multi-level memristive applications. By redistributing the surface oxygen vacancies, we precisely control the tunneling of two-dimensional electron gas (2DEG) through the ultrathin LAO barrier, achieving multiple and tunable conductance states (over 27) in a non-volatile way. To further improve the multi-level switching performance, we propose a variance-aware weight quantization (VAQ) method. Our simulation studies verify that the VAQ effectively reduces the state-overlap issue of the resistive switching device. We also find that the VAQ states can better represent the normal-like data distribution and, thus, significantly improve the computing accuracy of the device. Our results provide valuable insight into developing high-precision multi-bit memristors based on complex oxide heterostructures for neuromorphic applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Colloidal nanoparticle inks for printing functional devices: emerging trends and future prospects

Colloidal nanoparticles have been widely studied and proven to have unique and superior properties compared to their bulk form and are attractive building blocks for diverse technologies, including energy conversion and storage, sensing, electronics, etc. However, transforming colloidal nanoparticles into functional devices while translating their unique properties from the nanoscale to the macroscale remains a major challenge. The development of advanced manufacturing methodologies that can convert functional nanomaterials into high-performance devices in a scalable, controllable and affordable manner presents great research opportunities and challenges for the next several decades. One promising approach to fabricate functional devices from nanoscale building blocks is additive manufacturing, such as 2D and 3D printing, owing to their capability of fast prototyping and versatile fabrication. Here, we review recent progress and methodologies for printing functional devices using colloidal nanoparticle inks with an emphasis on 2D nanomaterial-based inks. This review provides a comprehensive overview on four important and interconnected topics, including nanoparticle synthesis, ink formulation, printing methods, and device applications. New research opportunities as well as future directions are also discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Superfast high-energy storage hybrid device composed of MXene and Chevrel-phase electrodes operated in saturated LiCl electrolyte solution

Development of high power devices with improved energy density is a highly desired target for advanced energy storage applications. Herein we propose a new strategy of triply-hybridized supercapacitive energy storage device composed of hybrid battery–supercapacitor negative electrode [Mo 6 S 8 (Chevrel-phase)/Ti 3 C 2 (MXene)] coupled with positive nanoporous carbon electrode, integrated with novel yet unexplored saturated (14 M) aqueous solution of LiCl. The electrochemical stability window of this electrolyte solution (2.70 V) significantly exceeds the cell voltage (2.05 V) relevant for the asymmetrical (hybrid anode vs. carbon cathode) cells. The aqueous 14 M LiCl solution has far superior characteristics to that of the previously studies 21 m LiTFSI aqueous solution. The paper is also focused on a deep electroanalytical analysis of a peculiar redox/capacitive heterogeneity of hybrid electrodes. It establishes a variety of additivity rules for both differential and integral equilibrium and kinetic characteristics of the charging processes in hybrid electrodes, solving the puzzle of potential distribution of specific electrochemical energy stored the hybrid electrodes. A careful 3-level hybridization design of asymmetric supercapacitive storage devices enabled the integration of battery and supercapacitor materials to get free-standing binderless electrodes suitable for high power/high energy density systems. Studying thoroughly the properties of highly concentrated solutions such as aqueous 14 M LiCl, which are very suitable for different types of supercapacitive devices, combined with profound analyses of the properties of hybrid electrodes, will pave the way for a rational design of very effective devices for energy storage and conversion.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Analytical comparisons of handheld LIBS and XRF devices for rapid quantification of gallium in a plutonium surrogate matrix

This work compares a portable laser-induced breakdown spectroscopy (LIBS) analyzer to a portable X-ray fluorescence (XRF) device for quantification of gallium (Ga) in a plutonium surrogate matrix of cerium (Ce) for the first time. Calibration methods are developed with spectra of Ce–Ga samples from both devices. Here, metrics such as limit of detection (LoD) and mean average percent error (MAPE) are examined to evaluate calibration performance. While the portable LIBS device can yield a nearly instantaneous analytical measurement, its accuracy is hampered by self-absorption. By employing a self-absorption correction and increasing gating delay, LIBS calibrations with errors in the low single percents and LoDs of 0.1% Ga were constructed. The XRF device produces calibrations with superlative sensitivity, yielding LoDs for gallium in the low tens of parts-per-million (ppm), two orders of magnitude lower than the corrected LIBS models. However, a clear trade-off of measurement fidelity is established between the instantaneous analysis of the LIBS device and the minutes-long XRF measurement yielding superior detection limits.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2012

An isocenter detection and verification device for use in proton therapy

We developed a new device for isocenter detection and verification for use in proton therapy. This device can be used to confirm the isocenters of a room laser, a digital radiography system, and a rotational gantry. Agreement between the isocenters of a room laser and a digital radiography system was examined visually. We used the star-shots method for detecting and verifying the rotational gantry isocenter. The gafchromic film could be irradiated with this method using a 2 mm slitted 200 MeV proton beam. The isocenters of a room laser and digital radiography system were in good agreement. The size distribution of the isocenter by the star-shots method was <2 mm, which is the value recommended by the American Association of Physicists in Medicine Task Group 142. This new device can be used to evaluate comprehensive isocenter detection and verification for related equipment. Subsequent checking using this new device will decrease the uncertainty in measuring an isocenter. When using this device, the working time was significantly reduced to about 30 min, including preparation. These measurements should be useful for high accuracy daily treatments.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2013

Cryogenic on-chip multiplexer for the study of quantum transport in 256 split-gate devices

We present a multiplexing scheme for the measurement of large numbers of mesoscopic devices in cryogenic systems. The multiplexer is used to contact an array of 256 split gates on a GaAs/AlGaAs heterostructure, in which each split gate can be measured individually. The low-temperature conductance of split-gate devices is governed by quantum mechanics, leading to the appearance of conductance plateaux at intervals of 2e{sup 2}/h. A fabrication-limited yield of 94% is achieved for the array, and a “quantum yield” is also defined, to account for disorder affecting the quantum behaviour of the devices. The quantum yield rose from 55% to 86% after illuminating the sample, explained by the corresponding increase in carrier density and mobility of the two-dimensional electron gas. The multiplexer is a scalable architecture, and can be extended to other forms of mesoscopic devices. It overcomes previous limits on the number of devices that can be fabricated on a single chip due to the number of electrical contacts available, without the need to alter existing experimental set ups.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices

The resistive switching (RS) properties of strontium titanate (Sr{sub 1+x}Ti{sub 1+y}O{sub 3+(x+2y)}, STO) based metal-oxide-metal structures prepared from industrial compatible processes have been investigated focusing on the effects of composition, microstructure, and device size. Metastable perovskite STO films were prepared on Pt-coated Si substrates utilizing plasma-assisted atomic layer deposition (ALD) from cyclopentadienyl-based metal precursors and oxygen plasma at 350 °C, and a subsequent annealing at 600 °C in nitrogen. Films of 15 nm and 12 nm thickness with three different compositions [Sr]/([Sr] + [Ti]) of 0.57 (Sr-rich STO), 0.50 (stoichiometric STO), and 0.46 (Ti-rich STO) were integrated into Pt/STO/TiN crossbar structures with sizes ranging from 100 μm{sup 2} to 0.01 μm{sup 2}. Nano-structural characterizations revealed a clear effect of the composition of the as-deposited STO films on their crystallization behavior and thus on the final microstructures. Local current maps obtained by local-conductivity atomic force microscopy were in good agreement with local changes of the films' microstructures. Correspondingly, also the initial leakage currents of the Pt/STO/TiN devices were affected by the STO compositions and by the films' microstructures. An electroforming process set the Pt/STO/TiN devices into the ON-state, while the forming voltage decreased with increasing initial leakage current. After a RESET process under opposite voltage has been performed, the Pt/STO/TiN devices showed a stable bipolar RS behavior with non-linear current-voltage characteristics for the high (HRS) and the low (LRS) resistance states. The obtained switching polarity and nearly area independent LRS values agree with a filamentary character of the RS behavior according to the valence change mechanism. The devices of 0.01 μm{sup 2} size with a 12 nm polycrystalline stoichiometric STO film were switched at a current compliance of 50 μA with voltages of about ±1.0 V between resistance states of about 40 kΩ (LRS) and 1 MΩ (HRS). After identification of the influences of the films' microstructures, i.e., grain boundaries and small cracks, the remaining RS properties could be ascribed to the effect of the [Sr]/([Sr] + [Ti]) composition of the ALD STO thin films.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Adhesion in flexible organic and hybrid organic/inorganic light emitting device and solar cells

This paper presents the results of an experimental study of the adhesion between bi-material pairs that are relevant to organic light emitting devices, hybrid organic/inorganic light emitting devices, organic bulk heterojunction solar cells, and hybrid organic/inorganic solar cells on flexible substrates. Adhesion between the possible bi-material pairs is measured using force microscopy (AFM) techniques. These include: interfaces that are relevant to organic light emitting devices, hybrid organic/inorganic light emitting devices, bulk heterojunction solar cells, and hybrid combinations of titanium dioxide (TiO{sub 2}) and poly(3-hexylthiophene). The results of AFM measurements are incorporated into the Derjaguin-Muller-Toporov model for the determination of adhesion energies. The implications of the results are then discussed for the design of robust organic and hybrid organic/inorganic electronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Electron holography of devices with epitaxial layers

Applicability of electron holography to deep submicron Si devices with epitaxial layers is limited due to lack of the mean inner potential data and effects of the sample tilt. The mean inner potential V{sub 0} = 12.75 V of the intrinsic epitaxial SiGe was measured by electron holography in devices with Ge content C{sub Ge} = 18%. Nanobeam electron diffraction analysis performed on the same device structure showed that SiGe is strain-free in [220] direction. Our results showed good correlation with simulations of the mean inner potential of the strain-free SiGe using density function theory. A new method is proposed in this paper to correct electron holography data for the overlap of potentials of Si and the epitaxial layer, which is caused by the sample tilt. The method was applied to the analysis of the dopant diffusion in p-Field-effect Transistor devices with the identical gate length L = 30 nm, which had alternative SiGe geometry in the source and drain regions and was subjected to different thermal processing. Results have helped to understand electrical data acquired from the same devices in terms of dopant diffusion.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Atomistic study on dithiolated oligo-phenylenevinylene gated device

Thanks to their semiconducting behavior, conjugated molecules are considered as an attractive candidate for future electronic devices. Understanding the charge transport characteristics through such molecules for different device applications would accelerate the progress in the field of molecular electronics. In addition, it would become more feasible to introduce/enhance specific properties of molecular devices. This theoretical paper focuses on atomistic simulation and characterization of novel molecular FET employing dithiolated oligo-phenylenevinylene molecules. The simulation is validated by its agreement with the experimental measurements conducted on the same molecules. The employed molecule has oxygen linkers, which are responsible for the strongly nonlinear current characteristics on the molecular device. We perform a thorough atomistic device analysis to illustrate the principles behind the nonlinear current characteristics and the gating effect.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Omnidirectional refractive devices for flexural waves based on graded phononic crystals

Different omnidirectional refractive devices for flexural waves in thin plates are proposed and numerically analyzed. Their realization is explained by means phononic crystal plates, where a previously developed homogenization theory is employed for the design of graded index refractive devices. These devices consist of a circular cluster of inclusions with a properly designed gradient in their radius. With this approach, the Luneburg and Maxwell lenses and a family of beam splitters for flexural waves are proposed and analyzed. Results show that these devices work properly in a broadband frequency region, being therefore an efficient approach for the design of refractive devices specially interesting for nano-scale applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗