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At least 721 records · Page 40

Characterization of Unimorph-Membrane Microactuators and Error-Analysis of the Characterization Process

Microactuators are versatile, low-cost, low-mass electrical-mechanical devices that can be used in many applications. Microactuators consist of two electrodes sandwiching a PZT (piezo-electric) film between them. The centers of the microactuators deflect when a voltage is applied across the electrodes. In order to correctly apply this technology for use, it is important to fully characterize the actuation behavior. Measuring the deflection profile as a function of the voltage of various microactuators is crucial. This measurement process has errors associated with it, so it is being studied to determine the accuracy of the data. In certain applications, microactuators may undergo many cycles of deflection; testing various microactuators through many cycles of deflection simulates these circumstances. However, due to an unknown issue, many of the microactuators exhibit defects that cause them to fail when voltage is applied to their electrodes. These defects do not allow for the acquisition of significant deflection profiles. Vibrations are the largest cause of error in deflection measurements, and the microactuators withstand continuous cycles of deflection, yet the cause of damage is still to be determined. Future projects will be needed to characterize the deflection profiles of various microactuators and to overcome the defects in the microactuators that are currently present.

Wright, Matthew W.↗

Enhanced read resolution in reconfigurable memristive synapses for Spiking Neural Networks

Abstract The synapse is a key element circuit in any memristor-based neuromorphic computing system. A memristor is a two-terminal analog memory device. Memristive synapses suffer from various challenges including high voltage, SET or RESET failure, and READ margin issues that can degrade the distinguishability of stored weights. Enhancing READ resolution is very important to improving the reliability of memristive synapses. Usually, the READ resolution is very small for a memristive synapse with a 4-bit data precision. This work considers a step-by-step analysis to enhance the READ current resolution or the read current difference between two resistance levels for a current-controlled memristor-based synapse. An empirical model is used to characterize the $${\hbox {HfO}}_{2}$$ HfO 2 based memristive device. $$1\textrm{st}$$ 1 st and $$2\textrm{nd}$$ 2 nd stage device of our proposed synapse design can be scaled to enhance the READ current margin up to $$\sim$$ ∼ 4.3 $$\times$$ × and $$\sim$$ ∼ 21%, respectively. Moreover, READ current resolution can be enhanced with run-time adaptation techniques such as READ voltage scaling and body biasing. The READ voltage scaling and body biasing can improve the READ current resolution by about 46% and 15%, respectively. TENNLab’s neuromorphic computing framework is leveraged to evaluate the effect of READ current resolution on classification, control, and reservoir computing applications. Higher READ current resolution shows better accuracy than lower resolution even when facing different levels of read noise.

97 MATHEMATICS AND COMPUTING↗

Electronic and Spintronic Open-Shell Macromolecules, Quo Vadis ?

Open-shell macromolecules (i.e., polymers containing radical sites either along their backbones or at the pendant sites of repeat units) have attracted significant attention owing to their intriguing chemical and physical (e.g., redox, optoelectronic, and magnetic) properties, and they have been proposed and/or implemented in a wide range of potential applications (e.g., energy storage devices, electronic systems, and spintronic modules). These successes span multiple disciplines that range from advanced macromolecular chemistry through nanoscale structural characterization and on to next-generation solid-state physics and the associated devices. In turn, this has allowed different scientific communities to expand the palette of radical-containing polymers relatively quickly. However, critical gaps remain on many fronts, especially regarding the elucidation of key structure–property–function relationships that govern the underlying electrochemical, optoelectronic, and spin phenomena in these materials systems. Here, we highlight vital developments in the history of open-shell macromolecules to explain the current state of the art in the field. Moreover, we provide a critical review of the successes and bring forward open opportunities that, if solved, could propel this class of materials in a meaningful manner. Finally, we provide an outlook to address where it seems most likely that open-shell macromolecules will go in the coming years. Furthermore, our considered view is that the future of radical-containing polymers is extremely bright and the addition of talented researchers with diverse skills to the field will allow these materials and their end-use devices to have a positive impact on the global science and technology enterprise in a relatively rapid manner.

36 MATERIALS SCIENCE↗

SENSEI: Characterization of Single-Electron Events Using a Skipper-CCD

We use a science-grade Skipper Charge Coupled Device (Skipper-CCD) operating in a low-radiation background environment to develop a semi-empirical model that characterizes the origin of single-electron events in CCDs. We identify, separate, and quantify three independent contributions to the single-electron events, which were previously bundled together and classified as ``dark counts'': dark current, amplifier light, and spurious charge. We measure a dark current, which depends on exposure, of (5.89+-0.77)x10^-4 e-/pix/day, and an unprecedentedly low spurious charge contribution of (1.52+-0.07)x10^-4 e-/pix, which is exposure-independent. In addition, we provide a technique to study events produced by light emitted from the amplifier, which allows the detector's operation to be optimized to minimize this effect to a level below the dark-current contribution. Our accurate characterization of the single-electron events allows one to greatly extend the sensitivity of experiments searching for dark matter or coherent neutrino scattering. Moreover, an accurate understanding of the origin of single-electron events is critical to further progress in ongoing R&D efforts of Skipper and conventional CCDs.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Direct Imaging of Asymmetric Interfaces and Electrostatic Potentials inside a Hafnia–Zirconia Ferroelectric Nanocapacitor

In hafnia-based thin-film ferroelectric devices, chemical phenomena during growth and processing, such as oxygen vacancy formation and interfacial reactions, appear to strongly affect device performance. However, the correlation between the structure, chemistry, and electrical potentials at the nanoscale in these devices is not fully known, making it difficult to understand their influence on device properties. Here, we directly image the composition and electrostatic potential with nanometer resolution in the cross section of a nanocrystalline W/Hf 0.5 Zr 0.5 O 2−δ (HZO)/W ferroelectric capacitor using multimodal electron microscopy. This reveals a 1.4 nm wide tungsten suboxide interfacial layer formed at the bottom interface during fabrication, which introduces a potential dip and leads to asymmetric switching fields. Additionally, we compare the measured potentials to DFT calculations and find it is nearly 3 V lower than expected in the HZO, which appears to be caused by oxygen vacancies and a resulting negative built-in potential. In conclusion, these chemical and electrostatic details are important to characterize and tune to achieve high-performance ferroelectric devices.

Defects in solids↗

Device-Level Multidimensional Thermal Dynamics With Implications for Current and Future Wide Bandgap Electronics

Researchers have been extensively studying wide-bandgap (WBG) semiconductor materials such as gallium nitride (GaN) with an aim to accomplish an improvement in size, weight, and power of power electronics beyond current devices based on silicon (Si). However, the increased operating power densities and reduced areal footprints of WBG device technologies result in significant levels of self-heating that can ultimately restrict device operation through performance degradation, reliability issues, and failure. Typically, self-heating in WBG devices is studied using a single measurement technique while operating the device under steady-state direct current measurement conditions. However, for switching applications, this steady-state thermal characterization may lose significance since the high power dissipation occurs during fast transient switching events. Therefore, it can be useful to probe the WBG devices under transient measurement conditions in order to better understand the thermal dynamics of these systems in practical applications. In this work, the transient thermal dynamics of an AlGaN/GaN high electron mobility transistor (HEMT) were studied using thermoreflectance thermal imaging and Raman thermometry. Also, the proper use of iterative pulsed measurement schemes such as thermoreflectance thermal imaging to determine the steady-state operating temperature of devices is discussed. These studies are followed with subsequent transient thermal characterization to accurately probe the self-heating from steady-state down to submicrosecond pulse conditions using both thermoreflectance thermal imaging and Raman thermometry with temporal resolutions down to 15 ns.

42 ENGINEERING↗

Analysis of dislocation configurations in SiC crystals through X-ray topography aided by ray tracing simulations

Silicon carbide as a wide bandgap semiconductor is of great research interest for its widespread deployment in a range of electronic and optoelectronic devices, particularly in power electronics. However, defects in silicon carbide crystals are still major concerns that is hampering the development of high-performance devices. X-ray topography, particularly using the synchrotron beam has been instrumental in characterizing and analyzing defect configurations in silicon carbide crystals to optimize crystal growth as well as understand the effect of defects on device performance. Here, in recent years, the use of ray-tracing simulation technique based on the orientation contrast mechanism to simulate contrast of defects observed on actual X-ray topographs has proven to be an effective approach to investigate the nature of crystallographic defects in various semiconductors. This review discusses the principle of ray-tracing simulation and its application and modifications to incorporate the effects of surface relaxation and photoelectric absorption to better simulate different dislocations observed in 4H–SiC as well as 6H–SiC crystals of various orientations. The adaptation to weak beam topography and plane wave topography is also discussed. The application of ray-tracing simulation in dislocation characterization of silicon carbide of different polytypes is systematically reviewed including different types of dislocations observed in both off-axis wafers and axial-sliced samples through synchrotron X-ray topography under various beam conditions, recording geometries and reflections. The result of ray-tracing simulation is further utilized in other studies including the investigation of effective penetration depth of all types of dislocations lying on the basal plane on grazing-incidence X-ray topography.

Engineering↗

Sequence-Based Anomaly Detection in Critical Infrastructure Networks

United States critical infrastructure faces new cyber threats from adversarial nation-state actors in the form of malware-free attacks. Traditional cybersecurity techniques use rules-based methods to identify indicators of compromise on networks, often missing these sophisticated attacks. Our approach leverages multiple state of the art machine learning models in a pipeline to identify abnormal network events through sequential analysis. We combine both device and packet-level information into individual events to characterize anomalous network actions. The model is trained and tested on real network traffic from the Idaho National Lab High Performance Computing (HPC) with greater than 98% precision. It is capable of flagging malicious tactics used by adversaries in malware-free attacks, severe changes to the network, and abnormal user activity by network devices.

99 - GENERAL AND MISCELLANEOUS↗

Thermal scanning probe and laser lithography for patterning nanowire based quantum devices

Semiconductor nanowire (NW) quantum devices offer a promising path for the pursuit and investigation of topologically-protected quantum states, and superconducting and spin-based qubits that can be controlled using electric fields. Theoretical investigations into the impact of disorder on the attainment of dependable topological states in semiconducting nanowires with large spin–orbit coupling and g-factor highlight the critical need for improvements in both growth processes and nanofabrication techniques. In this work, we used a hybrid lithography tool for both the high-resolution thermal scanning probe lithography and high-throughput direct laser writing of quantum devices based on thin InSb nanowires with contact spacing of 200 nm. Electrical characterization demonstrates quasi-ballistic transport. The methodology outlined in this study has the potential to reduce the impact of disorder caused by fabrication processes in quantum devices based on 1D semiconductors.

36 MATERIALS SCIENCE↗

Low Temperature Aggregation Transitions in N3 and Y6 Acceptors Enable Double‐Annealing Method That Yields Hierarchical Morphology and Superior Efficiency in Nonfullerene Organic Solar Cells

Abstract Thermal transition of organic solar cells (OSCs) constituent materials are often insufficiently researched, resulting in trial‐and‐error rather than rational approaches to annealing strategies to improve domain purity to enhance the power conversion efficiency. Despite the potential utility, little is known about the thermal transitions of the modern high‐performance acceptors Y6 and N3. Here, by using an optical method, it is discovered that the acceptor N3 has a clear solid‐state aggregation transition at 82 °C. This unusually low transition not only explains prior optimization protocols, but the transition informs and enables a double‐annealing method that can fine‐tune aggregation and the device morphology. Compared with 16.6% efficiency for PM6:N3:PC 71 BM control devices, higher efficiency of 17.6% is obtained through the improved protocol. Morphology characterization with x‐ray scattering methods reveals the formation of a multilength scale morphology. Moreover, the double‐annealing method is illustrated and easily transferred and validated with Y6‐based devices, using the transition of Y6 at 102 °C. As a result, the PCE improved from 16.0% to 16.8%. Design of high‐performance acceptors with yet lower aggregation transitions might be required for OSCs to successfully transition to low thermal budget industrial processing methods where annealing temperatures on plastic substrates have to be kept low.

Qin, Yunpeng↗

5-kWe Free-piston Stirling Engine Convertor

The high reliability, long life, and efficient operation of Free-Piston Stirling Engines (FPSEs) make them an attractive power system to meet future space power requirements with less mass, better efficiency, and less total heat exchanger area than other power convertor options. FPSEs are also flexible in configuration as they can be coupled with many potential heat sources and various heat input systems, heat rejection systems, and power management and distribution systems. Development of a 5-kWe Stirling Convertor Assembly (SCA) is underway to demonstrate the viability of an FPSE for space power. The design is a scaled-down version of the successful 12.5-kWe Component Test Power Converter (CTPC) developed under NAS3-25463. The ultimate efficiency target is 25% overall convertor efficiency (electrical power out over heat in). For the single cylinder prototype now in development, cost and time constraints required use of economical and readily available materials (steel versus beryllium) and components (a commercially available linear alternator) and thus lower efficiency. The working gas is helium at 150 bar mean pressure. The design consists of a displacer suspended on internally pumped gas bearings and a power piston/alternator supported on flexures. Non-contacting clearance seals are used between internal volumes. Heat to and from the prototype convertor is done via pumped liquid loops passing through shell and tube heat exchangers. The preliminary and detail designs of the convertor, controller, and support systems (heating loop, cooling loop, and helium supply system) are complete and all hardware is on order. Assembly and test of the prototype at Foster- Miller is planned for early 2008, when work will focus on characterizing convertor dynamics and steady-state operation to determine maximum power output and system efficiency. The device will then be delivered to Auburn University where assessments will include start-up and shutdown characterization and transient response to temperature and load variations. Future activities may include testing at NASA GRC.

Chapman, Peter A.↗

A composite electrodynamic mechanism to reconcile spatiotemporally resolved exciton transport in quantum dot superlattices

Quantum dot (QD) solids are promising optoelectronic materials; further advancing their device functionality requires understanding their energy transport mechanisms. The commonly invoked near-field Förster resonance energy transfer (FRET) theory often underestimates the exciton hopping rate in QD solids, yet no consensus exists on the underlying cause. In response, we use time-resolved ultrafast stimulated emission depletion (STED) microscopy, an ultrafast transformation of STED to spatiotemporally resolve exciton diffusion in tellurium-doped cadmium selenide–core/cadmium sulfide–shell QD superlattices. We measure the concomitant time-resolved exciton energy decay due to excitons sampling a heterogeneous energetic landscape within the superlattice. The heterogeneity is quantified by single-particle emission spectroscopy. This powerful multimodal set of observables provides sufficient constraints on a kinetic Monte Carlo simulation of exciton transport to elucidate a composite transport mechanism that includes both near-field FRET and previously neglected far-field emission/reabsorption contributions. Uncovering this mechanism offers a much-needed unified framework in which to characterize transport in QD solids and additional principles for device design.

36 MATERIALS SCIENCE↗

First-principles study and experimental characterization of metal incorporation in germanium telluride

Germanium telluride is a well-known phase change material (PCM) used in non-volatile memory cells and radio frequency switches. Controlling the properties of GeTe for improved PCM device performance has sometimes been achieved by doping and/or alloying with metals, often at concentrations greater than 10 at. % and using non-equilibrium methods. Here, since switching PCMs between the low-resistance crystalline and high-resistance amorphous states requires a heating cycle, the stability of metal-incorporated GeTe (Ge 0.5–x M x Te 0.5 ) films is also critical to practical implementation of these materials in electronic and optoelectronic devices. In this work, we use both density-functional theory and experimental characterization methods to probe the solubility and critical properties of Ge 0.5–x M x Te 0.5 films. Using first-principles calculations, we determine the enthalpy of formation for GeTe with 2.08, 4.17, and 6.25 at. % of Cu, Fe, Mn, Mo, and Ti and show trends between the stability of the Ge 0.5–x M x Te 0.5 systems and the atomic position, composition, and distribution of the metal atoms in the GeTe matrix.

36 MATERIALS SCIENCE↗

Tuning Thermal Stability through Dopant Size in Chemically Doped DPP–Thiophene Polymers

Molecular doping of conjugated polymers (CPs) is a key strategy for improving the performance of organic electronics devices, particularly thermoelectrics. Doped donor–acceptor (D–A) conjugated polymers, characterized by a tunable energy gap between the Fermi level and the transport band, show great promise in achieving high electrical conductivity (σ) while preserving a favorable Seebeck coefficient (S). Despite the promising performance enhancement of chemically doped D–A polymers, their thermal stability remains largely underexplored, a crucial consideration for the long-term operation of organic thermoelectric devices. In this study, we investigated the dopant size-dependent thermal stability of a diketopyrrolopyrrole-thiophene (DPP-T) D–A copolymer, utilizing two p-dopants: 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F 4 TCNQ) and Mo(tfd-CO 2 Me) 3 . Temperature-dependent UV–vis–NIR spectroscopy revealed that DPP-T/F 4 TCNQ is more prone to dedoping under a high temperature thermal stress than DPP-T/Mo(tfd-CO 2 Me) 3 . Although the F 4 TCNQ doped polymer shows higher initial in-plane conductivity than its Mo(tfd-CO 2 Me) 3 counterpart, it undergoes a conductivity loss of more than an order of magnitude after annealing at 120 °C for 30 min. In contrast, the in-plane conductivity of DPP-T/Mo(tfd-CO 2 Me) 3 remains stable under the same thermal conditions. Thermogravimetric analysis ruled out dopant sublimation as a primary contributor to dedoping, leading us to attribute the conductivity loss in F 4 TCNQ-doped DPP-T to dopant phase separation and migration. This observation was further confirmed by X-ray scattering studies and nanoscale infrared microscopy and spectroscopy studies. This work could provide further insights into the thermal stability of doped conjugated polymers and suggests that incorporating bulkier dopants is an effective strategy to enhance the thermal robustness of doped DPP-type systems.

Conjugated polymers↗

Measurement of laser absorption in underdense plasmas using near-field imaging of the incident and transmitted beams

Measurements of laser absorption in high-temperature, underdense plasmas produced at the Omega Laser Facility are made using two near-field imaging detectors that diagnose the spatial profile and energy of the port P9 beam before and after it transmits through the plasma. The incident beam is sampled using a partial reflection from a full-aperture, (30 cm-diam) uncoated wedge pickoff located before the target chamber vacuum window and final focus lens assembly. A concave mirror reduces the reflected beam size, allowing it to be recorded directly using a charged-coupled device (CCD) camera. The P9 transmitted beam diagnostic (P9TBD) characterizes the transmitted light by terminating the expanded beam on a semi-transparent diffuser and imaging the illuminated surface using a lens and CCD camera. The P9TBD samples a numerical aperture twice as large as the input beam, allowing the energy of transmitted beams with moderate levels of beam spray to be measured accurately. Calibration shots with no plasma provide a path to infer absorption without absolute photometric calibration of either detector. Lastly, the cross-calibration between the two detectors was measured to remain stable at ±200 ppm, enabling measurements of total beam absorption below 1% with ±0.07% error.

47 OTHER INSTRUMENTATION↗

Hawai‘i National Marine Renewable Energy Center (HINMREC)

The Hawaii National Marine Renewable Energy Center (HINMREC) was established to facilitate the commercialization of wave energy converter (WEC) devices, and to accelerate development and testing of Ocean Thermal Energy Conversion (OTEC) technologies. Housed at the Hawaii Natural Energy Institute (HNEI) of the University of Hawaii (UH), this program started with execution of the contract between the US Department of Energy (DOE) and UH in March 2009, and activities ran through the end of the project in September 2019. The DOE tasked HINMREC with facilitating and accelerating the build-out of the Navy’s Wave Energy Test Site (WETS), the nation’s first grid-connected open water wave energy conversion test facility, located off Marine Corps Base Hawaii (MCBH) in Kaneohe, on the island of Oahu. WETS was expanded from an existing test berth at 30m water depth to include test berths at 60m and 80m water depths. In recognition of the high costs associated with at-sea testing and evaluation of WEC devices, it was deemed imperative that HINMREC seek ways to reduce costs to developers by providing key research support to these early-stage technologies. WETS and HINMREC’s support allowed development of wave energy technology by providing a testing infrastructure that allows technology developers to test, demonstrate and evaluate their WEC devices, and generate data in order to advance WEC designs toward commercial readiness. HINMREC’s roles have included support in the establishment of the full site, including of wave resource characterization and site survey, followed by the essential roles of independent WEC device power performance assessment and environmental monitoring in support of deployed pre-commercial WECs. This DOE-funded work transitioned effectively to continue Navy-funded tasks for OTEC development, and activities at WETS, now under Naval Facilities Engineering Command (NAVFAC) funding. A secondary objective in the establishment of HINMREC was to assist the private sector in moving OTEC systems beyond proof-of-concept to pre-commercialization, primarily focused on system and component engineering, and local and global investigations into the potential environmental impacts of OTEC systems. HINMREC was tasked with maintaining high-resolution models of ocean thermal resources and the potential sustainable power output of OTEC systems. Ongoing tests begun previously under Navy funding at the OTEC Heat Exchangers (HXs) Test Facility at the Natural Energy Laboratory of Hawaii Authority (NELHA), in Kona on Hawaii Island, have been continued to identify cost-effective aluminum alloys for use in OTEC systems operating in the corrosive marine environment.

16 TIDAL AND WAVE POWER↗

Sensing Few Electrons Floating on Helium with High-Electron-Mobility Transistors

We report on low-frequency measurements of few electrons floating on superfluid helium using a bespoke cryogenic cascode amplifier circuit built with off-the-shelf GaAs high-electron-mobility transistors (HEMTs). We integrate this circuit with a charge-coupled device (CCD) to transport the electrons on helium and characterize its performance. Here, we show that this circuit has a signal-to-noise ratio (SNR) of ~ 2 $\frac{e}{√Hz}$ at 102 kHz, an order of magnitude improvement from previous implementations, and provides a compelling alternative to few electron sensing with high-frequency resonators.

Charge-Coupled Devices↗

An outlook into the flat land of 2D materials beyond graphene: synthesis, properties and device applications

Abstract The field of two-dimensional (2D) and layered materials continues to excite many researchers around the world who are eager to advance and innovate viable routes for large scale synthesis, doping and integration of monolayers and the development of unique characterization approaches for studying and harnessing exotic properties that will enable novel device applications. There has been a large interest in 2D materials beyond graphene, with particular emphasis on monoelemental materials (phosphorene, silicene, tellurene, etc. ), 2D compounds (MXenes, oxides, nitrides, carbides and chalcogenides), their alloys and layered van der Waals heterostructures. This is not only indicated by the significant increase in the number of peer reviewed publications each year in this area of research, but also by the surging number of conference sessions focusing on 2D materials beyond graphene. This Perspective article highlights some of the recent advances in the field from a diverse international community of theoretical and experimental researchers who participated in the symposium ‘Beyond Graphene 2D Materials—Synthesis, Properties and Device Applications’ at the Materials Research Society (MRS) Fall 2019 meeting.

McCreary, Amber (ORCID:0000000299885800)↗