W/TaC/SiC sandwich stack for high temperature applications
High-temperature stability of the tungsten/tantalum carbide/silicon carbide (W/TaC/SiC) system was examined and compared to the tungsten/silicon carbide (W/SiC) system. Interfacial reactions, surface morphology, and roughness evolutions on thermal annealing at 1000 °C were systematically investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). For the W/SiC system, WC, W 2 C and W 5 Si 3 phases were observed due to severe chemical reaction after 24 h annealing, which led to an inhomogeneous surface structure with several large craters and small pores, thereby increasing surface roughness greatly. On the other hand, there was no tungsten silicide and/or carbide formation upon annealing with a TaC diffusion barrier. The surface structure remained nearly unchanged, and small changes in surface roughness with annealing time, which could be due to the growth of W grains, were noted. Furthermore, both the as-deposited and the 24 h annealed W/TaC/SiC samples presented an excellent interfacial bonding with a dense uniform interface. The results indicate that TaC is a promising diffusion barrier in the W/SiC system for high temperature applications.