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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 721 records · Page 40
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

High voltage holding in the negative ion sources with cesium deposition

High voltage holding of the large surface-plasma negative ion source with cesium deposition was studied. It was found that heating of ion-optical system electrodes to temperature >100 °C facilitates the source conditioning by high voltage pulses in vacuum and by beam shots. The procedure of electrode conditioning and the data on high-voltage holding in the negative ion source with small cesium seed are described. The mechanism of high voltage holding improvement by depletion of cesium coverage is discussed.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2015

Low-voltage harmonic multiplying gyrotron traveling-wave amplifier in G band

Harmonic multiplying operation in a gyrotron traveling-wave amplifier (gyro-TWA) permits for magnetic field reduction and frequency multiplication. Lowering a beam voltage is an important step toward miniaturization of a harmonic multiplying gyro-TWA. However, the additional degree of freedom that is provided by the multitude cyclotron harmonics in a low-voltage harmonic multiplying gyro-TWA still easily generates various competing modes. An improved mode-selective circuit, using circular waveguides with various radii, can provide the rejection points within the frequency range to suppress competing modes. Simulated results reveal that the mode-selective circuit can provide an attenuation of more than 14 dB to suppress the competing modes. Furthermore, the performance of the gyro-TWA is analyzed for studying the sensitivity of the saturated output power and full width at half maximum bandwidth of the gyro-TWA to the beam voltage and the magnetic field. A stable low-voltage harmonic multiplying gyro-TWA with the mode-selective circuit is predicted to yield a peak output power of 24 kW at 200.4 GHz, corresponding to a saturated gain of 56 dB at an interaction efficiency of 20%. The full width at half maximum bandwidth is 3.0 GHz.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

Effect of pulsed corona discharge voltage and feed gas flow rate on dissolved ozone concentration

Ozonization is one of the methods extensively used for water purification and degradation of organic materials. Ozone (O{sub 3}) is recognized as a powerful oxidizing agent. Due to its strong oxidability and better environmental friendless, ozone increasing being used in domestic and industrial applications. Current technology in ozone production utilizes several techniques (corona discharge, ultra violet radiation and electrolysis). This experiment aimed to evaluating effect of voltage and gas flow rate on ozone production with corona discharge. The system consists of two net-type stainless steel electrode placed in a dielectric barrier. Three pulsed voltage (20, 30, 40 KV) and flow rate (5, 10, 15 L/min) were prepare for operation variable at high frequency (3.7 kHz) with AC pulsed power supply. The dissolved ozone concentration depends on the applied high-voltage level, gas flow rate and the discharge exposure duration. The ozone concentration increases with decreasing gas flow rate. Dissolved ozone concentrations greater than 200 ppm can be obtained with a minimum voltage 40 kV.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Control voltage and power fluctuations when connecting wind farms

Voltage, frequency, active power and reactive power are very important parameters in terms of power quality. These parameters are followed when connecting any power plant, the more the connection of wind farms. Connecting wind farms to the electricity system must not cause interference outside the limits set by regulations. Modern solutions for fast and automatic voltage control and power fluctuations using electronic control systems of reactive power flows. FACTS (Flexible Alternating Current Transmision System) systems, established on the basis of power electronic circuits ensure control of electrical status quantities to achieve the necessary transfer of power to the power grid. FACTS devices can quickly control parameters and sizes of state power lines, such as impedance line voltages and phase angles of the voltages of the two ends of the line. Their use can lead to improvement in power system operation by increasing the transmission capacity of power lines, power flow control lines, improved static and transient stability reserve.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2016

Characterization of AlN/AlGaN/GaN:C heterostructures grown on Si(111) using atom probe tomography, secondary ion mass spectrometry, and vertical current-voltage measurements

Complementary studies of atom probe tomography, secondary ion mass spectrometry, and vertical current-voltage measurements are carried out in order to unravel the influence of C-doping of GaN on the vertical leakage current of AlN/AlGaN/GaN:C heterostructures. A systematic increment of the vertical blocking voltage at a given current density is observed in the structures, when moving from the nominally undoped conditions—corresponding to a residual C-background of ∼10{sup 17 }cm{sup −3}—to a C-content of ∼10{sup 19 }cm{sup −3} in the GaN layer. The value of the vertical blocking voltage saturates for C concentrations higher than ∼10{sup 19 }cm{sup −3}. Atom probe tomography confirms the homogeneity of the GaN:C layers, demonstrating that there is no clustering at C-concentrations as high as 10{sup 20 }cm{sup −3}. It is inferred that the vertical blocking voltage saturation is not likely to be related to C-clustering.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Physical implication of transition voltage in organic nano-floating-gate nonvolatile memories

High-performance pentacene-based organic field-effect transistor nonvolatile memories, using polystyrene as a tunneling dielectric and Au nanoparticles as a nano-floating-gate, show parallelogram-like transfer characteristics with a featured transition point. The transition voltage at the transition point corresponds to a threshold electric field in the tunneling dielectric, over which stored electrons in the nano-floating-gate will start to leak out. The transition voltage can be modulated depending on the bias configuration and device structure. For p-type active layers, optimized transition voltage should be on the negative side of but close to the reading voltage, which can simultaneously achieve a high ON/OFF ratio and good memory retention.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Method for improved voltage determination for pulsed power systems utilizing a magnetically insulated transmission line

Because the voltage is difficult to measure in a magnetically insulated transmission line (MITL), measurement of the currents flowing in the cathode and anode are often used with MITL theory to estimate the voltage in a given experiment. However, that estimate contains a space charge correction term whose magnitude depends on what is referred to as the g factor that describes the distribution of charge and current in the electron flow layer in the MITL. Typically, g is on the order of unity but the accuracy of the voltage estimate depends on its actual value. While the space charge correction term is small when the MITL flow is strongly insulated, it is particularly important near self-limited MITL flow. System parameters that affect the distribution of electron flow are studied here at self-limited flow in order to illustrate this matter and develop a methodology to improve the voltage determination.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Gunn threshold voltage characterization in GaAs devices with wedge-shaped tapering

Here, we fabricate gallium arsenide-based devices with a wedge-shaped tapering region connected to a rectangular-shaped region and measure the threshold voltage required to trigger the Gunn effect. The threshold voltage reduction is attributed to the focusing of the electric field toward the narrower end of the device and is effective when the device has a steep enough tapering. We also model the electric field profile for the tapered devices using an intuitive graphical approach and the finite element method and provide estimates for the threshold voltages of tapered devices. Finally, we compare the estimates to the measured values and provide possible reasons for the discrepancies. We believe the capability of threshold voltage reduction with the wedge-shaped tapering design could be useful in device applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Distributed polarization-doped GaN p–n diodes with near-unity ideality factor and avalanche breakdown voltage of 1.25 kV

Polarization-induced (Pi) distributed or bulk doping in GaN, with a zero dopant ionization energy, can reduce temperature or frequency dispersions in impurity-doped p–n junctions caused by the deep-acceptor-nature of Mg, thus offering GaN power devices promising prospects. Before comprehensively assessing the benefits of Pi-doping, ideal junction behaviors and high-voltage capabilities should be confirmed. In this work, we demonstrate near-ideal forward and reverse I–V characteristics in Pi-doped GaN power p–n diodes, which incorporates linearly graded, coherently strained AlGaN layers. Hall measurements show a net increase in the hole concentration of 8.9 × 1016 cm−3 in the p-layer as a result of the polarization charge. In the Pi-doped n-layer, a record-low electron concentration of 2.5 × 1016 cm−3 is realized due to the gradual grading of Al0-0.72GaN over 1 μm. The Pi-doped p–n diodes have an ideality factor as low as 1.1 and a 0.10 V higher turn-on voltage than the impurity-doped p–n diodes due to the increase in the bandgap at the junction edge. A differential specific on-resistance of 0.1 mΩ cm2 is extracted from the Pi-doped p–n diodes, similar with the impurity-doped counterpart. The Pi-doped diodes show an avalanche breakdown voltage of ∼1.25 kV, indicating a high reverse blocking capability even without an ideal edge-termination. This work confirms that distributed Pi-doping can be incorporated in high-voltage GaN power devices to increase hole concentrations while maintaining excellent junction properties.

Nomoto, Kazuki↗
DOE OSTI2023

Capacitance–voltage modeling of mid-wavelength infrared nBn detectors

Capacitance–voltage measurements are a powerful technique to determine doping profiles of semiconductor pn junctions and Schottky barrier diodes. The measurements were recently extended to III-V-based mid-wavelength nBn infrared detectors, and absorber doping densities have been extracted using the widely accepted Schottky approximation, where the potential drop across the device is assumed to be across the depleting absorber layer. However, this approach is limited to when the absorber region of the nBn is under high reverse bias and thus is only able to extract the absorber region doping profile. Here, we introduce a semi-analytical model that is capable of extracting barrier dopant polarity, doping concentration, and thickness, as well as contact and absorber layer doping concentrations, all from a capacitance–voltage measurement. Rather than solely considering the potential drop across the depleting layers, it considers the potential drop across the accumulating layer as well. This negative charge accumulation occurs for the contact and absorber layers in the case of reverse and forward biases, respectively. This allows for a single model to be applied to a capacitance–voltage curve at forward and reverse biases and it can provide regions of bias where the absorber transitions from depletion to accumulation. We compare the agreement of the semianalytical model with modeling results from commercially available finite element method software and experimental capacitance–voltage data. Finally, we show that the method is consistent with the Schottky approximation of extracting absorber doping densities at high reverse bias and discuss the model's limitations.

Physics↗
DOE OSTI2012

Intermediate state trapping of a voltage sensor

Voltage sensor domains (VSDs) regulate ion channels and enzymes by undergoing conformational changes depending on membrane electrical signals. The molecular mechanisms underlying the VSD transitions are not fully understood. Here, we show that some mutations of I241 in the S1 segment of the Shaker Kv channel positively shift the voltage dependence of the VSD movement and alter the functional coupling between VSD and pore domains. Among the I241 mutants, I241W immobilized the VSD movement during activation and deactivation, approximately halfway between the resting and active states, and drastically shifted the voltage activation of the ionic conductance. This phenotype, which is consistent with a stabilization of an intermediate VSD conformation by the I241W mutation, was diminished by the charge-conserving R2K mutation but not by the charge-neutralizing R2Q mutation. Interestingly, most of these effects were reproduced by the F244W mutation located one helical turn above I241. Electrophysiology recordings using nonnatural indole derivatives ruled out the involvement of cation-Π interactions for the effects of the Trp inserted at positions I241 and F244 on the channel’s conductance, but showed that the indole nitrogen was important for the I241W phenotype. Insight into the molecular mechanisms responsible for the stabilization of the intermediate state were investigated by creating in silico the mutations I241W, I241W/R2K, and F244W in intermediate conformations obtained from a computational VSD transition pathway determined using the string method. The experimental results and computational analysis suggest that the phenotype of I241W may originate in the formation of a hydrogen bond between the indole nitrogen atom and the backbone carbonyl of R2. This work provides new information on intermediate states in voltage-gated ion channels with an approach that produces minimum chemical perturbation.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2012

Use-dependent block of the voltage-gated Na + channel by tetrodotoxin and saxitoxin: Effect of pore mutations that change ionic selectivity

Voltage-gated Na + channels (NaV channels) are specifically blocked by guanidinium toxins such as tetrodotoxin (TTX) and saxitoxin (STX) with nanomolar to micromolar affinity depending on key amino acid substitutions in the outer vestibule of the channel that vary with NaV gene isoforms. All NaV channels that have been studied exhibit a use-dependent enhancement of TTX/STX affinity when the channel is stimulated with brief repetitive voltage depolarizations from a hyperpolarized starting voltage. Two models have been proposed to explain the mechanism of TTX/STX use dependence: a conformational mechanism and a trapped ion mechanism. In this study, we used selectivity filter mutations (K1237R, K1237A, and K1237H) of the rat muscle NaV1.4 channel that are known to alter ionic selectivity and Ca 2+ permeability to test the trapped ion mechanism, which attributes use-dependent enhancement of toxin affinity to electrostatic repulsion between the bound toxin and Ca 2+ or Na + ions trapped inside the channel vestibule in the closed state. Our results indicate that TTX/STX use dependence is not relieved by mutations that enhance Ca 2+ permeability, suggesting that ion–toxin repulsion is not the primary factor that determines use dependence. Evidence now favors the idea that TTX/STX use dependence arises from conformational coupling of the voltage sensor domain or domains with residues in the toxin-binding site that are also involved in slow inactivation.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2023

Controlling the charge of dust particles in a plasma afterglow by timed switching of an electrode voltage

Abstract A method is demonstrated for controlling the charge of a dust particle in a plasma afterglow, allowing a wider range of outcomes than an earlier method. As in the earlier method, the dust particles are located near an electrode that has a DC voltage during the afterglow. Here, that DC voltage is switched to a positive value at a specified delay time, instead of maintaining a constant negative voltage as in the earlier method. Adjusting the timing of this switching allows one to control the residual charge gradually over a wide range that includes both negative and positive values of charge. For comparison, only positive residual charges were attained in the earlier method. We were able to adjust the residual charge from about −2000 e to +10 000 e , for our experimental parameters (8.35 µ m particles, 8 mTorr argon pressure, and a DC voltage that was switched from −150 V to +125 V within the first two milliseconds of the afterglow). The plasma conditions near the dust particles changed from ion-rich to electron-rich, when the electrode was switched from cathodic to anodic. Making this change at a specified time, as the electrons and ions decay in the afterglow, provides this control capability. These results also give insight into the time development of a dust particle’s charge in the afterglow, on a sub-millisecond time scale.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Effects of low-frequency voltage on nonlinear standing wave excitation, plasma uniformity, and ion dynamics in dual-frequency asymmetric capacitive discharges

Abstract It is known that in very-high-frequency (VHF) capacitively coupled plasmas, the higher harmonics generated by nonlinear sheath motion can enhance the standing wave effect (SWE), which can lead to center-peaked plasma density profiles. In this work, an improved nonlinear electromagnetic model incorporating a transmission line model, an electron momentum balance model, a bulk plasma model, a collisionless nonlinear numerical sheath model, and an ion Monte-Carlo collision (MCC) model is developed to study the effects of low-frequency (LF) voltage V L on the nonlinear standing wave excitation, plasma uniformity, and ion energy and angular distribution functions (IEDFs and IADFs) in dual-frequency (DF) asymmetric capacitive argon discharges at relatively low pressure of 3 Pa. The plasma diffusion in the radial direction and ion dynamics within the LF oscillating sheath are self-consistently considered. The LF voltage V L at 2 MHz varies from 0 to 700 V while the HF voltage V H at 60 MHz is fixed at 100 V. Simulation results indicate that without the addition of an LF source (i.e. V L = 0 V), there are a considerable number of high-order harmonics with short wavelengths, leading to significant SWE and central peak in the radial plasma density profile. Nevertheless, the high-order harmonic excitations tend to be weakened and merely occur around the phase of the full LF sheath collapse due to a shorter characteristic damping time of the surface waves as V L increases. This, combined with increased surface wavelengths of both the driving frequency and the higher harmonics at a higher V L , leads to suppressed standing waves and improved plasma uniformity. Meanwhile, the simulations show that both the low and the high energy peaks of IEDF move towards higher energies, and the energy peak separation width ΔEbecomes wider with the increase of V L . The IEDF at the radial center of the powered electrode exhibits a broader ΔEthan that at the edge. For the IADF, an increased V L results in more ions incident on the electrode with a smaller deflection angle. Because of a thinner sheath and a higher sheath voltage at the electrode center, the peak value of IADF at the electrode center is greater than that at the edge.

Physics↗
DOE OSTI2026

High voltage delivery and distribution for the NEXT-100 Time Projection Chamber

A critical element in the realization of large liquid andgas time projection chambers (TPCs) is the delivery and distributionof high voltages into and around the detector. Such experimentsrequire of order tens of kilovolts to enable electron drift overmeter-scale distances. This paper describes the design andoperation of the cathode feedthrough and high voltage distributionthrough the field cage of the NEXT-100 experiment, an undergroundTPC that will search for neutrinoless double beta decay0νββ. The feedthrough has been demonstrated to holdpressures up to 20 bar and sustain voltages as high as -65 kV.The TPC is operating stably at its design high voltages. The systemhas been realized within the constraints of a stringent radiopuritybudget and is now being used to execute a suite of sensitive doublebeta decay analyses.

Adams, C. [Argonne]↗
DOE OSTI2016

Temperature and voltage measurement in quantum systems far from equilibrium

In this work, we show that a local measurement of temperature and voltage for a quantum system in steady state, arbitrarily far from equilibrium, with arbitrary interactions within the system, is unique when it exists. This is interpreted as a consequence of the second law of thermodynamics. We further derive a necessary and sufficient condition for the existence of a solution. In this regard, we find that a positive temperature solution exists whenever there is no net population inversion. However, when there is a net population inversion, we may characterize the system with a unique negative temperature. Voltage and temperature measurements are treated on an equal footing: They are simultaneously measured in a noninvasive manner, via a weakly coupled thermoelectric probe, defined by requiring vanishing charge and heat dissipation into the probe. Our results strongly suggest that a local temperature measurement without a simultaneous local voltage measurement, or vice versa, is a misleading characterization of the state of a nonequilibrium quantum electron system. These results provide a firm mathematical foundation for voltage and temperature measurements far from equilibrium.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Hydration of gadolinium oxide ( Gd O x ) and its effect on voltage-induced Co oxidation in a Pt / Co / Gd O x / Au heterostructure

Magneto-ionic control of magnetism has garnered great interest in recent years due to the large magnetic changes that can be induced using a relatively small voltage. One model structure for this is Pt/Co/GdO x /Au , where Co is the magnetic layer and GdO x is the ionic conductor, with the magnetic properties dependent on the oxidation state of Co. While this structure is commonly used, there is limited understanding of the effect of GdO x properties on voltage-induced magnetic changes. In this work, we show that hydration of Gd 2 O 3 to form Gd(OH) 3 is crucial for voltage-induced Co oxidation in a Pt/Co/GdO x /Au device. By examining the rate of Co oxidation in nonhydrated and hydrated devices, we conclude that H 2 O in the GdO x layer acts as an oxidant during the voltage-induced Co oxidation process. Co oxidation through this interfacial reaction process is confirmed by in situ x-ray absorption spectroscopy.

36 MATERIALS SCIENCE↗
DOE OSTI2019

A Simple Control to Reduce Device Over-Voltage Caused by Non-Active Switch Loop in Three-Level ANPC Converters

With the development of wide band-gap (WBG) technology, the switching speed of power semiconductor devices increases, which makes circuits more sensitive to parasitics. For three-level active neutral point clamped (3L-ANPC) converters, the over-voltage caused by additional non-active switch loop can be an issue. This paper analyzes the multiple commutation loops in 3L-ANPC converter and summarizes the impact factors of the device over-voltage. The nonlinearity of the output capacitance of the device can significantly influence the over-voltage. A simple control without introducing additional hardware circuit or complex software algorithm is proposed to attenuate the effect of the nonlinear output capacitance. Multi-pulse test is conducted for a 3L-ANPC converter built with silicon carbide (SiC) MOSFETs. With the proposed control, the testing results show that the peak drain-source voltage of both active and non-active switches is reduced by more than 20% compared to the conventional control.

Gui, Handong↗