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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 721 records · Page 40
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Effective reduction of PdCoO 2 thin films via hydrogenation and sign tunable anomalous Hall effect

PdCoO 2 , belonging to a family of triangular oxides called delafossite, is one of the most conducting oxides. Its in-plane conductivity is comparable to those of the best metals and exhibits hydrodynamic electronic transport with an extremely long mean free path at cryogenic temperatures. Nonetheless, it is nonmagnetic despite the presence of the cobalt ion. In this work, we show that a mild hydrogenation process reduces PdCoO 2 thin films to an atomically mixed alloy of PdCo with strong out-of-plane ferromagnetism and sign-tunable anomalous Hall effect. Considering that many other compounds remain little affected under a similar hydrogenation condition, this discovery may provide a route to creating novel spintronic heterostructures combining strong ferromagnetism, involving oxides and other functional materials.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Self‐Standing Chiral Covalent Organic Framework Thin Films with Full‐Color Tunable Guest‐Induced Circularly Polarized Luminescence

Abstract Exploring self‐standing chiral covalent organic framework (COF) thin films with controllable circularly polarized luminescence (CPL) is of paramount significance but remains a challenging task. Herein, we demonstrate the first example of self‐standing chiral COF films employing a polymerization‐dispersion‐filtration strategy. Pristine, low‐quality chiral COF films were produced by interfacial polymerization and then re‐dispersed into COF colloidal solutions. Via vacuum assisted assembly, these COF colloids were densely stacked and assembled into self‐standing, pure chiral COF films ( L‐ / D‐ CCOF‐F) that were transparent, smooth, crack‐free and highly crystalline. These films were tunable in thicknesses, areas, and roughness, along with strong diffuse reflectance circular dichroism (DRCD) and cyan CPL signals, showing an intrinsic luminescence asymmetric factor ( g lum ) of ~4.3×10 −3 . Furthermore, these COF films served as host adsorbents to load various achiral organic dye guests through adsorption. The effective chiral transfer and energy transfer between CCOF‐F and achiral fluorescent dyes endowed the dyes with strong chirality and tunable DRCD, resulting in intense, full‐color‐tunable solid‐state CPL. Notably, the ordered arrangement of dye guest molecules within the preferentially oriented chiral pores of CCOF‐F contributed to an amplified | g lum | factor of up to 7.2×10 −2 , which is state‐of‐the‐art for COF‐based CPL materials. This work provides new insights into the design and fabrication of self‐standing chiral COF films, demonstrating their great potential for chiroptical applications.

Tang, Xihao↗
DOE OSTI2025

Integrated phononic waveguide on thin-film lithium niobate on diamond

Here, we demonstrate wavelength-scale phononic waveguides formed by transfer-printed thin-film lithium niobate (LN) on bulk diamond, a material stack that combines the strong piezoelectricity of LN with the high acoustic velocity and color-center compatibility of diamond. We characterize a delay line based on a 100 μm long phononic waveguide at room and cryogenic temperatures. The total insertion loss through the device at 4 K is −5.8 dB, corresponding to a $>$ 50 % transducer efficiency, at a frequency of 2.8 GHz. Our work represents a step toward phonon-mediated hybrid quantum systems consisting of strain-sensitive color centers in diamond.

Malik, Sultan [Stanford Univ., CA (United States)]↗
DOE OSTI2021

Magnetic Damping in Polycrystalline Thin-Film Fe-V Alloys

Here, we report on the magnetic damping properties of polycrystalline Fe-V alloy thin films that are deposited at room temperature. By varying the concentration of V in the alloy, the saturation magnetization can be adjusted from that of Fe to near zero.We show that exceptionally low values of the damping parameter can be maintained over the majority of this range, with a minimum damping at approximately 15%–20% V concentration. Such a minimum is qualitatively reproduced with ab initio calculations of the damping parameter, although at a concentration closer to 10% V. The measured intrinsic damping has a minimum value of (1.53±0.08)×10 –3 , which is approximately a factor of 3 higher than our calculated value of 0.48×10 –3 . From first-principles theory, we outline the factors that are mainly responsible for the trend of the damping parameter in these alloys. In particular, the band structure and resulting damping mechanism is shown to change at V concentrations greater than approximately 35% V content.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Phase diagram of infinite layer praseodymium nickelate Pr 1– x Sr x NiO 2 thin films

In this paper, we report the phase diagram of infinite layer Pr 1-x Sr x NiO 2 thin films synthesized via topotactic reduction from the perovskite precursor phase using CaH 2 . Based on the electrical transport properties, we find a doping-dependent superconducting dome extending between x = 0.12 and 0.28, with a maximum superconducting transition temperature T c of 14 K at x = 0.18, bounded by weakly insulating behavior on both sides. In contrast to the narrower dome observed in Nd 1–x Sr x NiO 2 , a local T c suppression near x = 0.2 was not observed for the Pr 1-x Sr x NiO 2 system. Normal state Hall effect measurements indicate mixed carrier contributions of both electrons and holes, and show a sign change in the Hall coefficient as functions of temperature and x, quite similar to that in Nd 1-x Sr x NiO 2 . Also similar is the observation of a minimum in the normal state resistivity associated with the superconducting compositions. These findings indicate an infinite layer nickelate phase diagram that is relatively insensitive to the rare-earth element, but suggest that disorder arising from the variations of the ionic radii on the rare-earth site affects the superconducting dome.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Order-disorder behavior at thin film oxide interfaces

Order-disorder processes fundamentally determine the structure and properties of many important oxide systems for energy and computing applications. While these processes have been intensively studied in bulk materials, they are less investigated and understood for nanostructured oxides in highly non-equilibrium conditions. These systems can now be realized through a range of deposition techniques and probed at exceptional spatial and chemical resolution, leading to a greater focus on interface dynamics. In this work, we survey a selection of recent studies of order-disorder behavior at thin film oxide interfaces, with a particular emphasis on the emergence of order during synthesis and disorder in extreme irradiation environments. We summarize key trends and identify directions for future study in this growing research area.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Signatures of ambient pressure superconductivity in thin film La 3 Ni 2 O 7

Recently, the bilayer nickelate La 3 Ni 2 O 7 has been discovered as a new superconductor with transition temperature T c near 80 K under high pressure. Despite extensive theoretical and experimental work to understand the nature of its superconductivity, the requirement of extreme pressure restricts the use of many experimental probes and limits its application potential. Here, in this work, we present signatures of superconductivity in La 3 Ni 2 O 7 thin films at ambient pressure, facilitated by the application of epitaxial compressive strain. The onset T c varies approximately from 26 K to 42 K, with higher T c values correlating with smaller in-plane lattice constants. We observed the co-existence of other Ruddlesden-Popper phases within the films and dependence of transport behavior with ozone annealing, suggesting that the observed low zero resistance T c of around 2 K can be attributed to stacking defects, grain boundaries, and oxygen stoichiometry. This finding initiates numerous opportunities to stabilize and study superconductivity in bilayer nickelates at ambient pressure, and to facilitate the broad understanding of the ever-growing number of high temperature and unconventional superconductors in the transition metal oxides.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Writable spin wave nanochannels in an artificial-spin-ice-mediated ferromagnetic thin film

We report magnonics, which employs spin-waves to transmit and process information, is a promising venue for low-power data processing. One of the major challenges is the local control of the spin-wave propagation path. Here, we introduce the concept of writable magnonics by taking advantage of the highly flexible reconfigurability and rewritability of artificial spin ice systems. Using micromagnetic simulations, we show that globally switchable spin-wave propagation and locally writable spin-wave nanochannels can be realized in a ferromagnetic thin film underlying an artificial pinwheel spin ice. The rewritable magnonics enabled by reconfigurable spin wave nanochannels provides a unique setting to design programmable magnonic circuits and logic devices for ultra-low power applications.

42 ENGINEERING↗
DOE OSTI2025

Epitaxial strain tuning of Er 3+ in ferroelectric thin films

Er 3+ color centers are promising candidates for quantum science and technology due to their long electron and nuclear spin coherence times, as well as their desirable emission wavelength. By selecting host materials with suitable, controllable properties, we introduce new parameters that can be used to tailor the Er 3+ emission spectrum. PbTiO 3 is a well-studied ferroelectric material with known methods of engineering different domain configurations through epitaxial strain. By distorting the structure of Er 3+ -doped PbTiO 3 thin films, we can manipulate the crystal fields around the Er 3+ dopant. This is resolved through changes in the Er 3+ resonant fluorescence spectra, tying the optical properties of the defect directly to the domain configurations of the ferroelectic matrix. Additionally, we are able to resolve a second set of peaks for films with in-plane ferroelectric polarization. We hypothesize these results to be due to either the Er 3+ substituting different sites of the PbTiO 3 crystal, differences in charges between the Er 3+ dopant and the original substituent ion, or selection rules. Systematically studying the relationship between the Er 3+ emission and the epitaxial strain of the ferroelectric matrix lays the pathway for future optical studies of spin manipulation by altering ferroelectric order parameters.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Hydrolysis-Induced Morphology Evolution of Linear and Bottlebrush Block Copolymers in Thin Films with Acid Vapor or Photoacid Generators

The self-assembly of high-χ low-N block copolymers (BCPs) can give patterns with sub-10 nm full pitch, serving as a promising alternative to photolithographic methods. Here, in this work, we synthesized poly(solketal methacrylate)-block-polystyrene copolymers, PSM-b-PS, with various volume ratios of the two blocks. After hydrolysis of the PSM block into poly(glycerol monomethacrylate), PGM, the BCPs had both lamellar and cylindrical microdomain morphologies in the bulk phase and in thin films. In addition to our previously developed solid-state hydrolysis strategy involving trifluoroacetic acid vapor, we developed a new photoinduced solid-state hydrolysis using photoacid generators, PAGs, embedded within the polymer films. After exposure to UV followed by a postexposure baking or solvent vapor annealing, the BCPs transitioned from the disordered, phase-mixed state into laterally ordered cylindrical patterns. In comparison to linear BCPs that rely on a random copolymer layer to modify interfacial interactions with the substrate to promote an orientation of the microdomains normal to the interface, we found that the microdomains in bottlebrush multiblock copolymers oriented normal to the interface absent substrate modification due to the chain architecture.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Beneficial Effects of La 0.5 Sr 0.5 CoO 3 Coatings on Thin‐Film LiMn 2 O 4 Cathodes for Lithium Ion Batteries

Abstract The severe capacity loss of spinel LiMn 2 O 4 (LMO) limits the utility of this otherwise promising lithium ion battery cathode material. One of the strategies to mitigate capacity fade is applying a coating on LMO particle surfaces. While this approach yields promising results, there is limited understanding of mechanisms whereby coatings improve LMO capacity retention. Herein, the effects of a new protective coating material, La 0.5 Sr 0.5 CoO 3 (LSCO), in a thin‐film battery geometry that is amenable to fundamental studies of electrode processes, are reported. RF sputtering deposition is used to produce high quality 25–100 nm LMO cathodes on Al 2 O 3 substrates with an intervening Pt/Ti back‐side contact layer. Cycling of the un‐coated cathodes results in capacity loss of 18% over 300 cycles. Adding a 2 nm LSCO layer reduces the capacity loss to 3%. While this may be due in part to reduced Mn dissolution, scanning transmission electron microscopy results indicate that the coating helps to preserve crystallinity and reduce lattice structure distortion due to inhibited formation of defect tetragonal spinel. Three‐electrode electrochemical impedance spectroscopy results reveal that the LSCO coating increases charge transfer and ohmic resistances, but the increases are generally too small to significantly impact cell performance even at high C‐rates.

25 ENERGY STORAGE↗
DOE OSTI2020

Opportunities in the Synthesis and Design of Radioactive Thin Films and Nanoparticles

Studies of radioactive isotopes at the liquid-solid or gas-solid interface are enabling a detailed mechanistic understanding the effects of radioactive decay on physical, biological, and chemical systems. In recent years, there has been a burgeoning interest in using radioactive isotopes for both imaging and therapeutic purposes by attaching them to the surface of colloidal nanoparticles. By merging the field of nanomedicine with the more mature field of internal radiation therapy, researchers are discovering new ways to diagnose and treat cancer. In this perspective, we discuss state-of-the-art radioactive thin films as applied to both well-defined surfaces and more complex nanoparticles. Here, we highlight the design considerations that are unique to radioactive films, which originate from the damaging and potentially self-destructive emissions produced during radioactive decay and highlight future opportunities in the largely underexplored area between radioisotope chemistry and nanoscience.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2026

Ternary and Quaternary Nickel-Iron-Oxide-Based Thin Films as Oxygen Evolution Reaction Catalysts in Alkaline Media

Alkaline water electrolyzers are a promising technology for energy storage and conversion through the electrochemical production of hydrogen, however the slow kinetics of the oxygen evolution reaction (OER) pose a major challenge. The alkaline environment enables the use of non-Pt-group metals as OER catalysts, in particular NiFe-based materials. In this study, Mn and/or Cr were elementally mixed with NiFe to further improve the OER catalyst properties through a controlled, systematic synthesis process involving thin films prepared by electron beam-induced physical vapor deposition (PVD). By exploring both simultaneous co-deposition and serial deposition of the different metals, the OER performance was investigated as a function of both the location of Mn or Cr in the multi-metal NiFe-based catalysts and the difference between surface versus bulk mixing. The distinct differences in the redox dynamics, surface oxidation, and stability of the seven studied catalysts reveal metal Cr- and/or Mn-overlayers as a promising synthesis approach for fine-tuning of catalyst properties and improving the OER performance.

Alkaline Water Electrolysis↗
DOE OSTI2021

Engineering of Ferroic Orders in Thin Films by Anionic Substitution

Multiferroics are a unique class of materials where magnetic and ferroelectric orders coexist. The research on multiferroics contributes significantly to the fundamental understanding of the strong correlations between different material degrees of freedom and provides an energy-efficient route toward the electrical control of magnetism. While multiple ABO 3 oxide perovskites are identified as being multiferroic, their magnetoelectric coupling strength is often weak, necessitating the material search in different compounds. Here, the observation of room-temperature multiferroic orders in multi-anion SrNbO 3-x N x thin films is reported. In these samples, the multi-anion state enables the room-temperature ferromagnetic ordering of the Nb d-electrons. Simultaneously, ferroelectric responses that originate from the structural symmetry breaking associated are found with both the off-center displacements of Nb and the geometric displacements of Sr, depending on the relative O-N arrangements within the Nb-centered octahedra. So findings not only diversify the available multiferroic material pool but also demonstrate a new multiferroism design strategy via multi-anion engineering.

thin-films↗
DOE OSTI2021

Sulfurization Engineering of One–Step Low–Temperature MoS 2 and WS 2 Thin Films for Memristor Device Applications

2D materials have been of considerable interest as new materials for device applications. Non-volatile resistive switching applications of MoS 2 and WS 2 have been previously demonstrated; however, these applications are dramatically limited by high temperatures and extended times needed for the large-area synthesis of 2D materials on crystalline substrates. The experimental results demonstrate a one-step sulfurization method to synthesize MoS 2 and WS 2 at 550 °C in 15 min on sapphire wafers. Furthermore, a large area transfer of the synthesized thin films to SiO 2 /Si substrates is achieved. Following this, MoS 2 and WS 2 memristors are fabricated that exhibit stable non-volatile switching and a satisfactory large on/off current ratio (10 3 –10 5 ) with good uniformity. Tuning the sulfurization parameters (temperature and metal precursor thickness) is found to be a straightforward and effective strategy to improve the performance of the memristors. Furthermore, the demonstration of large-scale MoS 2 and WS 2 memristors with a one-step low-temperature sulfurization method with simple strategy to tuning can lead to potential applications such as flexible memory and neuromorphic computing.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Organic thin-film transistors with a bottom bilayer gate dielectric having a low operating voltage and high operational stability

This study reports on p-channel bottom-gate organic thin-film transistors (OTFT) that achieve low-voltage operation with a thin bilayer gate dielectric of CYTOP/HfO 2 that also leads to high operational stability. A bottom-gate geometry allows the thickness of the gate dielectric to be reduced to 17 nm, thereby increasing the gate dielectric capacitance density to a value of up to 258 nF/cm 2 . All OTFTs yielded threshold voltages (V TH ) lower than -1 V, thereby providing minimum operating voltage (gate to source voltage ~ V TH ) of -1 V with field-effect mobility values in the range from 0.3 to 0.8 cm 2 /Vs and subthreshold swing values below 100 mV/dec. Operational stability during DC bias stress was found similar to that measured in devices with a top-gate geometry, with about 1% of drain current change after 6 h. Here, using a double-stretched exponential function, the operational stability characteristics were modeled. It was found that by increasing the metal oxide layer thickness, the threshold voltage can shift toward positive values under DC stress tests. For CYTOP layer thicknesses above 15 nm, a thicker CYTOP layer was found to shift the threshold voltage in the opposite direction toward negative values. Furthermore, these p-channel bottom-gate organic transistor with a bilayer gate dielectric of CYTOP/HfO 2 combine high mobility, high operational stability, and lower voltage operation of -1 V compared to top-gate OTFTs.

36 MATERIALS SCIENCE↗
DOE OSTI2023

CdTe-based thin film photovoltaics: Recent advances, current challenges and future prospects

Cadmium telluride (CdTe)-based cells have emerged as the leading commercialized thin film photovoltaic technology and has intrinsically better temperature coefficients, energy yield, and degradation rates than Si technologies. More than 30 GW peak (GWp) of CdTe-based modules are installed worldwide, multiple companies are in production, modules are shipping at up to 18.6% efficiency, and lab cell efficiency is above 22%. We review developments in the science and technology that have occurred over approximately the past decade. These achievements were enabled by manufacturing innovations and scaling module production, as well as maximizing photocurrent through window layer optimization and alloyed CdSe x Te 1-x (CST) absorbers. Improved chlorine passivation processes, film microstructure, and serendipitous Se defect passivation significantly increased minority carrier lifetime. Efficiencies >22% have been realized for both Cu and As doped CST-based cells. The path to further efficiency gains hinges primarily on increasing open circuit voltage (V oc ) and fill factor (FF) through innovations in materials, fabrication methods, and device stacks. Replacing the longstanding Cu doping with As doping is resulting in better module stability and is being translated to large-scale production. To realize 25% efficiency and >1 V V oc , research and development is needed to increase the minority carrier lifetime beyond 100 ns, reduce grain boundary and interface recombination, and tailor band diagrams at the front and back interfaces. Many of these goals have been realized separately however combining them together using scalable manufacturing approaches has been elusive to date. We review these achievements and outstanding opportunities for this remarkable photovoltaic technology.

14 SOLAR ENERGY↗