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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 721 records · Page 40

Developing an Analytical Framework for Cumulative Effects

The extended dry storage scenario for spent nuclear fuel (SNF) in the United States introduces the possibility of more than one transportation campaign to move the SNF from its point of origin to one or more interim storage facilities before it reaches its final destination. While the structural integrity of SNF and its storage and transportation systems are often evaluated under single event loading conditions, the reality is that a single SNF system will experience multiple structural loading events during its life cycle, the number and severity of which will depend on its individual circumstances. SNF systems will also be subjected to environmental exposure that will affect their temperature and the potential for cracks to develop in the SNF canister walls. Considered separately, many different events and scenarios might be strong enough to challenge the integrity of SNF cladding and the storage and transportations canisters that contain SNF. But considered together, over the full life cycle of an SNF system, there is the possibility that individual low-magnitude events could cause enough incremental damage to components of the SNF system to challenge its structural integrity if the time span is long enough or if the life cycle includes a sufficient number of loading events. The concern is that the cumulative effect of relatively small mechanical loads, thermal stresses, or cracking can add up to conditions that could compromise SNF or its containment structures. This report is a first step in establishing an analysis framework for evaluating these cumulative effects.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Providing Thermal Stability for an Exascale Supercomputer: A Case Study of Frontier's Cooling System

High performance computing (HPC) systems frequently produce large dynamic power swings, even under typical operating conditions, that can present a significant challenge for their direct-liquid cooling systems. Further, the primary cooling loops that must remove this waste heat have response times measured in minutes while the underlying HPC component thermal stress is measured in seconds. The per-socket power demand for both compute processing units (CPUs) and graphic processing units ( GPUs) continues to increase with each successive generation while case temperatures are declining. New HPC systems are expected to exacerbate the challenge of these dynamic power swings and the impact on effective and timely cooling systems. This paper describes the cooling and controls system for Oak Ridge National Laboratory’s Frontier Supercomputer, the first sustained exascale system, as a case study for this situation. The cooling and control system for Frontier demonstrates specific success, but with a number of trade-offs and decisions that suggest further design and operating optimizations for the community at large to consider.

42 ENGINEERING↗

Sapphire Substrate Trenching to Advance Superconducting High-Coherence Quantum Devices

Achieving longer coherence times in superconducting qubits is essential for advancing quantum information processing and enabling scalable quantum computing. This work presents an innovative fabrication strategy focused on sapphire trenching of the substrate of superconducting high-coherence quantum devices, developed by the SQMS Nanofabrication Taskforce in collaboration with the materials characterization team. In this talk, we present a method to efficiently and consistently trench into the sapphire substrate, without compromising the surface roughness or profile of the etched sapphire. In the literature, trenching in the substrate has been shown to decrease losses, unwanted coupling and thermal stress. Sapphire’s strong covalent bonds make it harder to etch compared to silicon, yet it is more favorable for high-coherence quantum devices due to its lower dielectric losses. This innovative technique opens new possibilities for superconducting qubit fabrication: we fabricated high coherence qubit chips on sapphire substrates with trenching, to demonstrate that it will help pushing towards higher coherence times. By integrating this work with ongoing junction process optimization, design innovation, materials characterization and exploration, we outline a clear pathway toward transmon coherence times reaching millisecond scales and beyond.

Garattoni, S. [Fermilab]↗

Sapphire Substrate Trenching to Advance Superconducting High-Coherence Quantum Devices

Achieving longer coherence times in superconducting qubits is essential for advancing quantum information processing and enabling scalable quantum computing. This work presents an innovative fabrication strategy focused on sapphire trenching of the substrate of superconducting high-coherence quantum devices, developed by the SQMS Nanofabrication Taskforce in collaboration with the materials characterization team. In this talk, we present a method to efficiently and consistently trench into the sapphire substrate, without compromising the surface roughness or profile of the etched sapphire. In the literature, trenching in the substrate has been shown to decrease losses, unwanted coupling and thermal stress. Sapphire’s strong covalent bonds make it harder to etch compared to silicon, yet it is more favorable for high-coherence quantum devices due to its lower dielectric losses. This innovative technique opens new possibilities for superconducting qubit fabrication: we fabricated high coherence qubit chips on sapphire substrates with trenching, to demonstrate that it will help pushing towards higher coherence times. By integrating this work with ongoing junction process optimization, design innovation, materials characterization and exploration, we outline a clear pathway toward transmon coherence times reaching millisecond scales and beyond.

Garattoni, S. [Fermilab]↗

Experimental Observations of Aerodynamic and Heating Test on Insulating Heat Shields

Several different types of insulating heat shields have been subjected to aerodynamic tests and radiant-heating tests in order to obtain a better insight into the problems involved when the primary structure of m aerodynamically heated vehicle is substantially cooler than the exposed external surface. One of the main problems was considered to be a proper allowance for thermal expansion caused by these large temperature differences, so that undue distortion or thermal stresses would not occur in either the outer shield or the underlying structure. corrugated outer skin with suitably designed expansion joints was a feature of all the specimens tested.

Anderson, Melvin S.↗

Plasma jet electrode has longer operating life

Water-cooled, silver-infiltrated tungsten electrode has twice the operating lifetime of the pure tungsten electrode used in plasma jet generators. This electrode reduces the erosion rate, ensures excellent heat transfer, and reduces thermal stresses.

Gracey, C. M.↗

Reinforced thermal-shock resistant ceramics

Composite material, made by dispersing short tungsten-rhenium fibers randomly throughout zirconium oxide, is highly resistant to oxidizing environments at temperatures above 2000 degrees F. This reinforced ceramic is also thermal stress resistant.

Crump, D. N.↗

High temperature ion source

Modified Nielsen-type ion source produces temperatures up to 1500 degrees C and permits obtaining a plasma from low vapor-pressure materials. Design minimizes thermal stresses. Dual-filament discharge chamber achieves the high temperature and provides independent control of the heating and electron emission functions.

Swift, R.↗

Improved high-temperature gimbal joint

Development and characteristics of bellows gimbal joint for reduction of thermal stress effects are discussed. Reactions of designed joint to changes in temperature are described. Illustrations of conventional gimbal joint and improved gimbal joint are provided.

Winemiller, J. R.↗