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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 721 records · Page 40
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Bimodal switching field distributions in all-perpendicular spin-valve nanopillars

Switching field measurements of the free layer element of 75 nm diameter spin-valve nanopillars reveal a bimodal distribution of switching fields at low temperatures (below 100 K). This result is inconsistent with a model of thermal activation over a single perpendicular anisotropy barrier. The correlation between antiparallel to parallel and parallel to antiparallel switching fields increases to nearly 50% at low temperatures. This reflects random fluctuation of the shift of the free layer hysteresis loop between two different magnitudes, which may originate from changes in the dipole field from the polarizing layer. The magnitude of the loop shift changes by 25% and is correlated to transitions of the spin-valve into an antiparallel configuration.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Critical analysis and remedy of switching failures in straintronic logic using Bennett clocking in the presence of thermal fluctuations

Straintronic logic is a promising platform for beyond Moore's law computing. Using Bennett clocking mechanism, information can propagate through an array of strain-mediated multiferroic nanomagnets, exploiting the dipolar coupling between the magnets without having to physically interconnect them. Here, we perform a critical analysis of switching failures, i.e., error in information propagation due to thermal fluctuations through a chain of such straintronic devices. We solved stochastic Landau-Lifshitz-Gilbert equation considering room-temperature thermal perturbations and show that magnetization switching may fail due to inherent magnetization dynamics accompanied by thermally broadened switching delay distribution. Avenues available to circumvent such issue are proposed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Electrical switching in a Fe-thiacrown molecular device

First-principles calculations are performed to inspect the electronic and transport properties of a Fe-thiacrown molecular device, namely, a Au-Fe(9S{sub 3}){sub 2}-Au junction. It is found that the junction has a low-spin (LS) ground state and a high-spin (HS) metastable state. Further study shows that the HS state is a conducting state while the LS state is a nearly insulating one, which means that a switch between these two spin configurations results in a good electrical switching behavior and can serve as an ON/OFF state for a logic unit. Thus, it may find applications as switches or memories in molecular electronic circuits.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Three-terminal resistive switching memory in a transparent vertical-configuration device

The resistive switching phenomenon has attracted much attention recently for memory applications. It describes the reversible change in the resistance of a dielectric between two non-volatile states by the application of electrical pulses. Typical resistive switching memories are two-terminal devices formed by an oxide layer placed between two metal electrodes. Here, we report on the fabrication and operation of a three-terminal resistive switching memory that works as a reconfigurable logic component and offers an increased logic density on chip. The three-terminal memory device we present is transparent and could be further incorporated in transparent computing electronic technologies.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Current-induced switching of magnetic tunnel junctions: Effects of field-like spin-transfer torque, pinned-layer magnetization orientation, and temperature

We study current-induced switching in magnetic tunnel junctions in the presence of a field-like spin-transfer torque and titled pinned-layer magnetization in the high current limit at finite temperature. We consider both the Slonczewski and field-like torques with coefficients a{sub J} and b{sub J}, respectively. At finite temperatures, σ=b{sub J}/a{sub J}=±1 leads to a smaller mean switching time compared that with σ=0. The reduction of switching time in the presence of the field-like term is due to the alignment effect (for σ>0) and the initial torque effect.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Resistive switching memories in MoS{sub 2} nanosphere assemblies

A resistive switching memory device consisting of reduced graphene oxide and indium tin oxide as top/bottom two electrodes, separated by dielectric MoS{sub 2} nanosphere assemblies as the active interlayer, was fabricated. This device exhibits the rewritable nonvolatile resistive switching with low SET/RESET voltage (∼2 V), high ON/OFF resistance ratio (∼10{sup 4}), and superior electrical bistability, introducing a potential application in data storage field. The resistance switching mechanism was analyzed in the assumptive model of the electron tunneling across the polarized potential barriers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Switching current density reduction in perpendicular magnetic anisotropy spin transfer torque magnetic tunneling junctions

We investigate the switching current density reduction of perpendicular magnetic anisotropy spin transfer torque magnetic tunneling junctions using micromagnetic simulations. We find that the switching current density can be reduced with elongated lateral shapes of the magnetic tunnel junctions, and additional reduction can be achieved by using a noncollinear polarizer layer. The reduction is closely related to the details of spin configurations during switching processes with the additional in-plane anisotropy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Crystallinity dependence of resistive switching in Ti/Pr(Sr{sub 0.1}Ca{sub 0.9}){sub 2}Mn{sub 2}O{sub 7}/Pt: Filamentary versus interfacial mechanisms

The resistive switching characteristics of two Pr(Sr{sub 0.1}Ca{sub 0.9}){sub 2}Mn{sub 2}O{sub 7} (PSCMO)-based devices (Ti/PSCMO-1/Pt and Ti/PSCMO-2/Pt) prepared under different conditions have been investigated. The two devices both showed bipolar switching behaviors. Scanning electron microscope measurements showed different grain boundaries in the two PSCMO films. By fitting the I-V curves and area dependence of the device resistance, we found that the Ti/PSCMO-1/Pt device indicated filamentary conduction, whereas interfacial effects dominated the conductance in Ti/PSCMO-2/Pt device. Our results suggest that the different grain boundaries may play a critical role in oxygen vacancy movement and hence result in the two different resistive switching properties.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Uniform bipolar resistive switching properties with self-compliance effect of Pt/TiO{sub 2}/p-Si devices

We report uniform bipolar resistive switching characteristic with self-compliance effect of Pt/TiO{sub 2}/p-Si devices in which TiO{sub 2} thin films were prepared directly on p-Si substrates by chemical solution deposition method. The resistive switching parameters of the Pt/TiO{sub 2}/p-Si cell obtained, such as distribution of threshold voltages, retention time, as well as resistance variation of high resistance state (HRS) and low resistance state (LRS), were investigated, and the conduction mechanisms of HRS and LRS were analyzed. The conductive mechanism at LRS and low voltage region of HRS was dominated by Ohmic law. At the high voltage region of HRS, the conductive mechanism followed the space charge limited current theory. The resistive switching phenomenon can be explained by electron trapping and de-trapping process, in which the defects (most probably oxygen vacancies) act as electron traps. Our study suggests that using p-type silicon as bottom electrode can provide a simple method for fabricating a resistive random access memory with self-compliance function. In addition, the Pt/TiO{sub 2}/p-Si configuration is compatible with complementary metal oxide semiconductor process.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Modelling current-induced magnetization switching in Heusler alloy Co{sub 2}FeAl-based spin-valve nanopillar

We investigated the current-induced magnetization switching in a Heusler alloy Co{sub 2}FeAl-based spin-valve nanopillar by using micromagnetic simulations. We demonstrated that the elimination of the intermediate state is originally resulted from the decease of effective magnetic anisotropy constant. The magnetization switching can be achieved at a small current density of 1.0 × 10{sup 4} A/cm{sup 2} by increasing the demagnetization factors of x and y axes. Based on our simulation, we found magnetic anisotropy and demagnetization energies have different contributions to the magnetization switching.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Effect of La{sup 3+} substitution with Gd{sup 3+} on the resistive switching properties of La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin films

This study demonstrated that the resistive switching voltage of perovskite manganite material could be controlled by A-site cation substitution in “A” MnO{sub 3} perovskite manganite structure. A partial substitution of La{sup 3+} in La{sub 0.7}Sr{sub 0.3}MnO{sub 3} with smaller cation Gd{sup 3+} induced A-site vacancy of the largest Sr{sup 2+} cation with surface segregation of SrO{sub y} due to ionic size mismatch, and the induced vacancies reduced migration energy barrier. The operating voltage decreased from 3.5 V to 2.5 V due to a favorable condition for electrochemical migration and redox of oxygen ions. Moreover, surface-segregated SrO{sub y} was enhanced with Gd-substitution and the SrO{sub y} reduced Schottky-like barrier height and resistive switching ratio from the potential drop and screening effect. The relationship between A-site vacancy generation resulting in surface segregation of SrO{sub y} and resistive switching behavior was also investigated by energy resolved x-ray photoelectron spectroscopy, O 1s near edge x-ray absorption spectroscopy, and current voltage measurement.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Low-current-density spin-transfer switching in Gd{sub 22}Fe{sub 78}-MgO magnetic tunnel junction

Magnetization switching of a relatively thick (9 nm) Gd-Fe free layer was achieved with a low spin injection current density of 1.0 × 10{sup 6} A/cm{sup 2} using MgO based magnetic tunnel junction devices, fabricated for light modulators. At about 560 × 560 nm{sup 2} in size, the devices exhibited a tunneling magnetoresistance ratio of 7%. This low-current switching is mainly attributed to thermally assisted spin-transfer switching in consequence of its thermal magnetic behavior arising from Joule heating.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Effect of damping on the laser induced ultrafast switching in rare earth-transition metal alloys

In this paper, we present simulations of thermally induced magnetic switching in ferrimagnetic systems performed with a Landau-Lifshitz-Bloch (LLB) equation for damping constant in a wide range of values. We have systematically studied the GdFeCo ferrimagnet with various concentrations of Gd and compared for some values of parameters the LLB results with atomistic simulations. The agreement is remarkably good, which shows that the dynamics described by the ferrimagnetic LLB is a reasonable approximation of this complex physical phenomenon. As an important element, we show that the LLB is able to also describe the intermediate formation of a ferromagnetic state which seems to be essential to understand laser induced ultrafast switching. The study reveals the fundamental role of damping during the switching process.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Resistive switching characteristics of polycrystalline SrTiO{sub 3} films

Strontium titanate (STO) thin films 90 nm in thickness were grown on a Pt substrate through atomic layer deposition (ALD). The as-deposited ALD STO grown with an ALD cycle ratio of 1:1 (Sr:Ti) was in an amorphous phase, and annealing at 800 °C in air crystallized the films into the perovskite phase. This phase change was confirmed by x-ray diffraction and transmission electron microscopy. The as-deposited ALD STO exhibited no discernible switching mechanism, whereas unipolar switching behavior was reproducibly observed with a high resistance ratio (10{sup 8}–10{sup 9}) and strict separation of the set/reset voltages and currents in the annealed ALD STO. Mechanisms for charge transport in both the low- and high-resistance states and for resistive switching in the annealed ALD STO are also proposed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices

The resistive switching (RS) properties of strontium titanate (Sr{sub 1+x}Ti{sub 1+y}O{sub 3+(x+2y)}, STO) based metal-oxide-metal structures prepared from industrial compatible processes have been investigated focusing on the effects of composition, microstructure, and device size. Metastable perovskite STO films were prepared on Pt-coated Si substrates utilizing plasma-assisted atomic layer deposition (ALD) from cyclopentadienyl-based metal precursors and oxygen plasma at 350 °C, and a subsequent annealing at 600 °C in nitrogen. Films of 15 nm and 12 nm thickness with three different compositions [Sr]/([Sr] + [Ti]) of 0.57 (Sr-rich STO), 0.50 (stoichiometric STO), and 0.46 (Ti-rich STO) were integrated into Pt/STO/TiN crossbar structures with sizes ranging from 100 μm{sup 2} to 0.01 μm{sup 2}. Nano-structural characterizations revealed a clear effect of the composition of the as-deposited STO films on their crystallization behavior and thus on the final microstructures. Local current maps obtained by local-conductivity atomic force microscopy were in good agreement with local changes of the films' microstructures. Correspondingly, also the initial leakage currents of the Pt/STO/TiN devices were affected by the STO compositions and by the films' microstructures. An electroforming process set the Pt/STO/TiN devices into the ON-state, while the forming voltage decreased with increasing initial leakage current. After a RESET process under opposite voltage has been performed, the Pt/STO/TiN devices showed a stable bipolar RS behavior with non-linear current-voltage characteristics for the high (HRS) and the low (LRS) resistance states. The obtained switching polarity and nearly area independent LRS values agree with a filamentary character of the RS behavior according to the valence change mechanism. The devices of 0.01 μm{sup 2} size with a 12 nm polycrystalline stoichiometric STO film were switched at a current compliance of 50 μA with voltages of about ±1.0 V between resistance states of about 40 kΩ (LRS) and 1 MΩ (HRS). After identification of the influences of the films' microstructures, i.e., grain boundaries and small cracks, the remaining RS properties could be ascribed to the effect of the [Sr]/([Sr] + [Ti]) composition of the ALD STO thin films.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Percolation mechanism through trapping/de-trapping process at defect states for resistive switching devices with structure of Ag/Si{sub x}C{sub 1−x}/p-Si

Pure Si{sub x}C{sub 1−x} (x > 0.5) and B-containing Si{sub x}C{sub 1−x} (x > 0.5) based resistive switching devices (RSD) with the structure of Ag/Si{sub x}C{sub 1−x}/p-Si were fabricated and their switching characteristics and mechanism were investigated systematically. Percolation mechanism through trapping/ de-trapping at defect states was suggested for the switching process. Through the introduction of B atoms into Si{sub x}C{sub 1−x}, the density of defect states was reduced, then, the SET and RESET voltages were also decreased. Based on the percolation theory, the dependence of SET/RESET voltage on the density of defect states was analyzed. These results supply a deep understanding for the SiC-based RSD, which have a potential application in extreme ambient conditions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Unipolar resistive switching behavior of amorphous YCrO{sub 3} films for nonvolatile memory applications

Amorphous YCrO{sub 3} (YCO) films were prepared on Pt/TiO{sub 2}/SiO{sub 2}/Si substrate by pulsed laser deposition in order to investigate resistive switching (RS) phenomenon. The Pt/YCO/Pt device showed stable unipolar RS with resistance ratio of ∼10{sup 5} between low and high resistance states, excellent endurance and retention characteristics, as well as, non-overlapping switching voltages with narrow dispersions. Based on the x-ray photoelectron spectroscopy and temperature dependent switching characteristics, observed RS was mainly ascribed to the oxygen vacancies. Moreover, current-voltage characteristics of the device in low and high resistance states were described by Ohmic and trap controlled space–charge limited conduction mechanisms, respectively.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Differential ultrafast all-optical switching of the resonances of a micropillar cavity

We perform frequency- and time-resolved all-optical switching of a GaAs-AlAs micropillar cavity using an ultrafast pump-probe setup. The switching is achieved by two-photon excitation of free carriers. We track the cavity resonances in time with a high frequency resolution. The pillar modes exhibit simultaneous frequency shifts, albeit with markedly different maximum switching amplitudes and relaxation dynamics. These differences stem from the non-uniformity of the free carrier density in the micropillar, and are well understood by taking into account the spatial distribution of injected free carriers, their spatial diffusion and surface recombination at micropillar sidewalls.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗